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Author Korneev, A.; Minaeva, O.; Rubtsova, I.; Milostnaya, I.; Chulkova, G.; Voronov, B.; Smirnov, K.; Seleznev, V.; Gol'tsman, G.; Pearlman, A.; Slysz, W.; Cross, A.; Alvarez, P.; Verevkin, A.; Sobolewski, R. doi  openurl
  Title Superconducting single-photon ultrathin NbN film detector Type Journal Article
  Year 2005 Publication Quantum Electronics Abbreviated Journal  
  Volume 35 Issue 8 Pages 698-700  
  Keywords NbN SSPD, SNSPD  
  Abstract (up) Superconducting single-photon ultrathin NbN film detectors are studied. The development of manufacturing technology of detectors and the reduction of their operating temperature down to 2 K resulted in a considerable increase in their quantum efficiency, which reached in the visible region (at 0.56 μm) 30%—40%, i.e., achieved the limit determined by the absorption coefficient of the film. The quantum efficiency exponentially decreases with increasing wavelength, being equal to ~20% at 1.55 μm and ~0.02% at 5 μm. For the dark count rate of ~10-4s-1, the experimental equivalent noise power was 1.5×10-20 W Hz-1/2; it can be decreased in the future down to the record low value of 5×10-21 W Hz-1/2. The time resolution of the detector is 30 ps.  
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  Notes Сверхпроводящий однофотонный детектор на основе ультратонкой пленки NbN Approved no  
  Call Number Serial 383  
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Author Budyanskij, M. Ya.; Sejdman, L. A.; Voronov, B. M.; Gubkina, T. O. url  openurl
  Title Increase of reproducibility in production of superconducting thin films of niobium nitride Type Journal Article
  Year 1992 Publication Sverkhprovodimost': Fizika, Khimiya, Tekhnika Abbreviated Journal Sverkhprovodimost': Fizika, Khimiya, Tekhnika  
  Volume 5 Issue 10 Pages 1950-1954  
  Keywords NbN films  
  Abstract (up) Technique to control the composition of gas medium in the reactive magnetron discharge and the composition of the deposited films of niobium nitride using electrical parameters of discharge only, in particular, by δU = Up – Uar value at contant stabilized discharge current is described. Technique to select optimal condition for deposition of niobium nitride films when the films have composition meeting chemical formula, is suggested. Thin films of niobium nitride with up to 7 nm thickness and with rather high temperature of transition into superconducting state Tk > 10 K) and with low width of transition (δ < 0.6 K), are obtained. It is determined, that substrate material and dielectric sublayer do not affect. Tk value, while difference in coefficients of thermal expansion of substrate and of film affects δTk value.  
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  ISSN 0131-5366 ISBN Medium  
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  Notes Approved no  
  Call Number Serial 1675  
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Author Belitsky, V.; Desmaris, V.; Dochev, D.; Meledin, D.; Pavolotsky, A. openurl 
  Title Towards Multi-Pixel Heterodyne Terahertz Receivers Type Conference Article
  Year 2011 Publication Proc. 22th Int. Symp. Space Terahertz Technol. Abbreviated Journal  
  Volume Issue Pages  
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  Abstract (up) Terahertz multi-pixel heterodyne receivers introduce multiple challenges for their implementation, mostly due to the extremely small dimensions of all components and even smaller tolerances in terms of alignment, linear dimensions and waveguide component surface quality. In this manuscript, we present a concept of terahertz multi-pixel heterodyne receiver employing optical layout using polarization split between the LO and RF. The frontend isbased on a waveguide balanced HEB mixer for the frequency band 1.6 – 2.0 THz. The balanced HEB mixer followsthe layout of earlier demonstrated APEX T2 mixer. However for the mixer presented here, we implemented split-block layout offering inimized lengths of all waveguides and thus reducing the associated RF loss. The micromachining methods employed for producing the mixer housing and the HEB mixer chip are very suitable for producing multiple structures and hence are in-line with requirements of multi-pixel receiver technology. The demonstrated relatively simple mounting of the mixer chip with self-aligning should greatly facilitate the integration of such multi-channel receiver. Index Terms—Instrumentation, Multi-pixel, Terahertz, Waveguide Balanced Mixer.  
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  Notes Approved no  
  Call Number RPLAB @ atomics90 @ Serial 975  
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Author Mehdi, I.; Gol'tsman, G.; Putz, P. url  doi
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  Title Introduction to the mini-special-issue on the 25th international symposium on space terahertz technology (ISSTT) Type Miscellaneous
  Year 2015 Publication IEEE Trans. THz Sci. Technol. Abbreviated Journal IEEE Trans. THz Sci. Technol.  
  Volume 5 Issue 1 Pages 14-15  
  Keywords  
  Abstract (up) THE 25th International Symposium on Space Terahertz Technology (ISSTT) was held in Moscow, Russia, between April 27–30, 2014. The conference was organized by Moscow State Pedagogical University and the Higher School of Economics (National Research University) and Chaired by Professor Gregory Gol'tsman of Moscow State Pedagogical University. The conference was attended by roughly 150 participants from 15 countries. The technology covered by ISSTT includes detectors, devices, circuits and systems in various areas of THz science and technology. Each year this symposium brings together the global THz space science technology community, and as such, emphasizes the broad international collaboration that is required to execute these large complicated instrument programs that dominate this field. However, talks covering technologies for balloon, aircraft, and ground-based telescopes were also presented.

In this special section of IEEE Transactions on Terahertz Science and Technology, we include eight expanded papers from the 25th ISSTT symposium. The papers range from development of SIS mixers to optical adjustment systems for radio telescopes. The 26th ISSTT will be held in Boston, MA, USA, during March 16–18, 2015. Researchers and scientist involved in THz research are invited to attend this symposium (more details are at http://www.cfa.harvard.edu/events/2015/isstt2015/).

You can access the full list of papers presented at the ISSTT symposia from the National Radio Astronomy Observatory website: http://www.nrao.edu/meetings/isstt/index.shtml

Yours sincerely
 
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  ISSN 2156-342X ISBN Medium  
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  Notes Approved no  
  Call Number Serial 1353  
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Author Zhang, J.; Boiadjieva, N.; Chulkova, G.; Deslandes, H.; Gol'tsman, G. N.; Korneev, A.; Kouminov, P.; Leibowitz, M.; Lo, W.; Malinsky, R.; Okunev, O.; Pearlman, A.; Slysz, W.; Smirnov, K.; Tsao, C.; Verevkin, A.; Voronov, B.; Wilsher, K.; Sobolewski, R. url  doi
openurl 
  Title Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors Type Journal Article
  Year 2003 Publication Electron. Lett. Abbreviated Journal Electron. Lett.  
  Volume 39 Issue 14 Pages 1086-1088  
  Keywords NbN SSPD, SNSPD, applications  
  Abstract (up) The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed.  
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  ISSN 0013-5194 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1512  
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