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Verevkin, A. A., Pearlman, A., Slysz, W., Zhang, J., Sobolewski, R., Chulkova, G., et al. (2003). Ultrafast superconducting single-photon detectors for infrared wavelength quantum communications. In E. Donkor, A. R. Pirich, & H. E. Brandt (Eds.), Proc. SPIE (Vol. 5105, pp. 160–170). SPIE.
Abstract: We have developed a new class of superconducting single-photon detectors (SSPDs) for ultrafast counting of infrared (IR) photons for secure quantum communications. The devices are operated on the quantum detection mechanism, based on the photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconducting stripe. The detectors are fabricated from 3.5-nm-thick NbN films and they operate at 4.2 K inside a closed-cycle refrigerator or liquid helium cryostat. Various continuous and pulsed laser sources have been used in our experiments, enabling us to determine the detector experimental quantum efficiency (QE) in the photon-counting mode, response time, time jitter, and dark counts. Our 3.5-nm-thick SSPDs reached QE above 15% for visible light photons and 5% at 1.3 – 1.5 μm infrared range. The measured real-time counting rate was above 2 GHz and was limited by the read-out electronics (intrinsic response time is <30 ps). The measured jitter was <18 ps, and the dark counting rate was <0.01 per second. The measured noise equivalent power (NEP) is 2 x 10-18 W/Hz1/2 at λ = 1.3 μm. In near-infrared range, in terms of the counting rate, jitter, dark counts, and overall sensitivity, the NbN SSPDs significantly outperform their semiconductor counterparts. An ultrafast quantum cryptography communication technology based on SSPDs is proposed and discussed.
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Zhang, J., Pearlman, A., Slysz, W., Verevkin, A., Sobolewski, R., Okunev, O., et al. (2003). Infrared picosecond superconducting single-photon detectors for CMOS circuit testing. In CLEO/QELS (Cmv4). Optical Society of America.
Abstract: Novel, NbN superconducting single-photon detectors have been developed for ultrafast, high quantum efficiency detection of single quanta of infrared radiation. Our devices have been successfully implemented in a commercial VLSI CMOS circuit testing system.
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Zhang, J., Słysz, W., Pearlman, A., Verevkin, A., Sobolewski, R., Okunev, O., et al. (2003). Time delay of resistive-state formation in superconducting stripes excited by single optical photons. Phys. Rev. B, 67(13), 132508 (1 to 4).
Abstract: We have observed a 65(±5)-ps time delay in the onset of a resistive-state formation in 10-nm-thick, 130-nm-wide NbN superconducting stripes exposed to single photons. The delay in the photoresponse decreased to zero when the stripe was irradiated by multi-photon (classical) optical pulses. Our NbN structures were kept at 4.2 K, well below the material’s critical temperature, and were illuminated by 100-fs-wide optical pulses. The time-delay phenomenon has been explained within the framework of a model based on photon-induced generation of a hotspot in the superconducting stripe and subsequent, supercurrent-assisted, resistive-state formation across the entire stripe cross section. The measured time delays in both the single-photon and two-photon detection regimes agree well with theoretical predictions of the resistive-state dynamics in one-dimensional superconducting stripes.
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Verevkin, A. A., Zhang, J., Slysz, W., Sobolewski, R., Lipatov, A. P., Okunev, O., et al. (2002). Superconducting single-photon detectors for GHz-rate free-space quantum communications. In J. C. Ricklin, & D. G. Voelz (Eds.), Proc. SPIE (Vol. 4821, pp. 447–454). SPIE.
Abstract: We report our studies on the performance of new NbN ultrathin-film superconducting single-photon detectors (SSPDs). Our SSPDs exhibit experimentally measured quantum efficiencies from 5% at wavelength λ = 1550 nm up to 10% at λ = 405 nm, with exponential, activation-energy-type spectral sensitivity dependence in the 0.4-μm – 3-μm wavelength range. Using a variable optical delay setup, we have shown that our NbN SSPDs can resolve optical photons with a counting rate up to 10 GHz, presently limited by the read-out electronics. The measured device jitter was below 35 ps under optimum biasing conditions. The extremely high photon counting rate, together with relatively high (especially for λ > 1 μm) quantum efficiency, low jitter, and very low dark counts, make NbN SSPDs very promising for free-space communications and quantum cryptography.
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Okunev, O., Smirnov, K., Chulkova, G., Korneev, A., Lipatov, A., Gol'tsman, G., et al. (2002). Ultrafast NBN hot-electron single-photon detectors for electronic applications. In Abstracts 8-th IUMRS-ICEM.
Abstract: We present a new, simple to manufacture, single-photon detector (SPD), which can work from ultraviolet to near-infrared wavelengths of optical radiation and combines high speed of operation, high quantum efficiency (QE), and very low dark counts. The devices are superconducting and operate at temperature below 5 K. The physics of operation of our SPD is based on formation of a photon-induced resistive hotspot and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconductor.
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Lipatov, A., Okunev, O., Smirnov, K., Chulkova, G., Korneev, A., Kouminov, P., et al. (2002). An ultrafast NbN hot-electron single-photon detector for electronic applications. Supercond. Sci. Technol., 15(12), 1689–1692.
Abstract: We present the latest generation of our superconducting single-photon detector (SPD), which can work from ultraviolet to mid-infrared optical radiation wavelengths. The detector combines a high speed of operation and low jitter with high quantum efficiency (QE) and very low dark count level. The technology enhancement allows us to produce ultrathin (3.5 nm thick) structures that demonstrate QE hundreds of times better, at 1.55 μm, than previous 10 nm thick SPDs. The best, 10 × 10 μm2, SPDs demonstrate QE up to 5% at 1.55 μm and up to 11% at 0.86 μm. The intrinsic detector QE, normalized to the film absorption coefficient, reaches 100% at bias currents above 0.9 Ic for photons with wavelengths shorter than 1.3 μm.
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Verevkin, A., Xu, Y., Zheng, X., Williams, C., Sobolewski, R., Okunev, O., et al. (2001). Superconducting NbN-based ultrafast hot-electron single-photon detector for infrared range. In Proc. 12th Int. Symp. Space Terahertz Technol. (pp. 462–468).
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Gol’tsman, G. N., Okunev, O., Chulkova, G., Lipatov, A., Semenov, A., Smirnov, K., et al. (2001). Picosecond superconducting single-photon optical detector. Appl. Phys. Lett., 79(6), 705–707.
Abstract: We experimentally demonstrate a supercurrent-assisted, hotspot-formation mechanism for ultrafast detection and counting of visible and infrared photons. A photon-induced hotspot leads to a temporary formation of a resistive barrier across the superconducting sensor strip and results in an easily measurable voltage pulse. Subsequent hotspot healing in ∼30 ps time frame, restores the superconductivity (zero-voltage state), and the detector is ready to register another photon. Our device consists of an ultrathin, very narrow NbN strip, maintained at 4.2 K and current-biased close to the critical current. It exhibits an experimentally measured quantum efficiency of ∼20% for 0.81 μm wavelength photons and negligible dark counts.
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Xu, Y., Zheng, X., Williams, C., Verevkin, A., Sobolewski, R., Chulkova, G., et al. (2001). Ultrafast superconducting hot-electron single-photon detector. In CLEO (345).
Abstract: Summary form only given. The current most-pressing need is to develop a practical, GHz-range counting single-photon detector, operational at either 1.3-/spl mu/m or 1.55-/spl mu/m radiation wavelength, for novel quantum communication and quantum cryptography systems. The presented solution of the problem is to use an ultrafast hot-electron photodetector, based on superconducting thin-film microstructures. This type of device is very promising, due to the macroscopic quantum nature of superconductors. Very fast response time and the small, (meV range) value of the superconducting energy gap characterize the superconductor, leading to the efficient avalanche process even for infrared photons.
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Svechnikov, S. I., Okunev, O. V., Yagoubov, P. A., Gol'tsman, G. N., Voronov, B. M., Cherednichenko, S. I., et al. (1997). 2.5 THz NbN hot electron mixer with integrated tapered slot antenna. IEEE Trans. Appl. Supercond., 7(2), 3548–3551.
Abstract: A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2.
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