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Author An, Zhenghua; Chen, Jeng-Chung; Ueda, T.; Komiyama, S.; Hirakawa, K. openurl 
  Title Infrared phototransistor using capacitively coupled two-dimensional electron gas layers Type Journal Article
  Year 2005 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 86 Issue Pages 172106 - 172106-3  
  Keywords 2DEG  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ akorneev @ Serial 603  
Permanent link to this record
 
 
Author Cao, Q.; Yoon, S. F.; Tong, C. Z.; Ngo, C. Y.; Liu, C. Y.; Wang, R.; Zhao, H. X. openurl 
  Title Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers Type Journal Article
  Year 2009 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 95 Issue 19 Pages 3  
  Keywords 2DEG  
  Abstract The competition of ground state (GS) and excited state (ES) is investigated from the as-grown and thermally annealed 1.3 μm ten-layer p-doped InAs/GaAs quantum dot (QD) lasers. The modal gain competition between GS and ES are measured and analyzed around the ES threshold characteristics. Our results show that two-state competition is more significant in devices with short cavity length operating at high temperature. By comparing the as-grown and annealed devices, we demonstrate enhanced GS and suppressed ES lasing from the QD laser annealed at 600 °C for 15 s.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ gujma @ Serial 673  
Permanent link to this record
 
 
Author Gol’tsman, G. N.; Smirnov, K. V. url  doi
openurl 
  Title Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures Type Journal Article
  Year 2001 Publication Jetp Lett. Abbreviated Journal Jetp Lett.  
  Volume 74 Issue 9 Pages 474-479  
  Keywords 2DEG, AlGaAs/GaAs heterostructures  
  Abstract Theoretical and experimental works devoted to studying electron-phonon interaction in the two-dimensional electron gas of semiconductor heterostructures at low temperatures in the case of strong heating in an electric field under quasi-equilibrium conditions and in a quantizing magnetic field perpendicular to the 2D layer are considered.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-3640 ISBN Medium  
  Area Expedition Conference  
  Notes По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах Approved no  
  Call Number Serial 1541  
Permanent link to this record
 
 
Author Kawano, Yukio; Ishibashi, Koji url  doi
openurl 
  Title An on-chip near-field terahertz probe and detector Type Journal Article
  Year 2008 Publication Nature Photonics Abbreviated Journal Nature Photon  
  Volume 2 Issue 10 Pages 618-621  
  Keywords single molecule, terahertz, THz, near-field, microscopy, imaging, 2DEG, GaAs/AlGaAs, detector, applications  
  Abstract The advantageous properties of terahertz waves, such as their transmission through objects opaque to visible light, are attracting attention for imaging applications. A promising approach for achieving high spatial resolution is the use of near-field imaging. Although this method has been well established in the visible and microwave regions, it is challenging to perform in the terahertz region. In the terahertz techniques investigated to date, detectors have been located remotely from the probe, which degrades sensitivity, and the influence of far-field waves is unavoidable. Here we present a new integrated detection device for terahertz near-field imaging in which all the necessary detection components — an aperture, a probe and a terahertz detector — are integrated on one semiconductor chip, which is cryogenically cooled. This scheme allows highly sensitive, high-resolution detection of the evanescent field alone and promises new capabilities for high-resolution terahertz imaging.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1749-4885 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 570  
Permanent link to this record
 
 
Author Shah, Jagdeep; Pinczuk, A.; Gossard, A. C.; Wiegmann, W. openurl 
  Title Energy-loss rates for hot electrons and holes in GaAs quantum wells Type Journal Article
  Year 1985 Publication Phys. Rev. Lett. Abbreviated Journal Phys. Rev. Lett.  
  Volume 54 Issue Pages 2045-2048  
  Keywords 2DEG, GaAs/AlGaAs, heat flow, electron-phonon, hole-phonon, carrier-phonon, interactions  
  Abstract We report the first direct determination of carrier-energy-loss rates in a semiconductor. These measurements provide fundamental insight into carrier-phonon interactions in semiconductors. Unexpectedly large differences are found in the energy-loss rates for electrons and holes in GaAs/AlGaAs quantum wells. This large difference results from an anomalously low electron-energy-loss rate, which we attribute to the presence of nonequilibrium optical phonons rather than the effects of reduced dimensionality or dynamic screening.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 633  
Permanent link to this record
 
 
Author Shaha, Jagdeep; Pinczukb, A.; Gossardb, A. C.; Wiegmannb, W. openurl 
  Title Hot carrier energy loss rates in GaAs quantum wells: large differences between electrons and holes Type Journal Article
  Year 1985 Publication Phys. B+C Abbreviated Journal  
  Volume 134 Issue 1-3 Pages 174-178  
  Keywords 2DEG, GaAs/AlGaAs, heat flow, electron-phonon, hole-phonon, carrier-phonon, interactions  
  Abstract The first direct and separate determination of the hot electron and hot hole energy loss rates to the lattice shows unexpectedly large differences between electrons and holes in GaAs quantum wells. This large difference results from an anomalously low electron energy loss rate, which we attribute to the presence of non-equilibrium optical phonon rather than the effects of reduced dimensionality or dynamic screening. A model calculation of hot phonon effects is presented.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 634  
Permanent link to this record
 
 
Author Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. url  doi
openurl 
  Title Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures Type Journal Article
  Year 2010 Publication Bull. Russ. Acad. Sci. Phys. Abbreviated Journal Bull. Russ. Acad. Sci. Phys.  
  Volume 74 Issue 1 Pages 100-102  
  Keywords 2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth  
  Abstract The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1062-8738 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1217  
Permanent link to this record
 
 
Author Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. url  doi
openurl 
  Title Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons Type Journal Article
  Year 2010 Publication Semicond. Abbreviated Journal Semicond.  
  Volume 44 Issue 11 Pages 1427-1429  
  Keywords 2DEG, AlGaAs/GaAs heterostructures mixers  
  Abstract The temperature and concentration dependences of the frequency bandwidth of terahertz heterodyne AlGaAs/GaAs detectors based on hot electron phenomena with phonon cooling of two-dimensional electrons have been measured by submillimeter spectroscopy with a high time resolution. At a temperature of 4.2 K, the frequency bandwidth at a level of 3 dB (f 3 dB) is varied from 150 to 250 MHz with a change in the concentration n s according to the power law f 3dB ∝ n −0.5 s due to the dominant contribution of piezoelectric phonon scattering. The minimum conversion loss of the semiconductor heterodyne detector is obtained in structures with a high carrier mobility (μ > 3 × 105 cm2 V−1 s−1 at 4.2 K).  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1063-7826 ISBN Medium  
  Area Expedition Conference  
  Notes Полоса и потери преобразования полупроводникового смесителя с фононным каналом охлаждения двумерных электронов Approved no  
  Call Number Serial 1216  
Permanent link to this record
 
 
Author Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. url  doi
openurl 
  Title Energy relaxation of two-dimensional electrons in the quantum Hall effect regime Type Journal Article
  Year 2000 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 71 Issue 1 Pages 31-34  
  Keywords 2DEG, GaAs/AlGaAs heterostructures  
  Abstract The mm-wave spectroscopy with high temporal resolution is used to measure the energy relaxation times τe of 2D electrons in GaAs/AlGaAs heterostructures in magnetic fields B=0–4 T under quasi-equilibrium conditions at T=4.2 K. With increasing B, a considerable increase in τe from 0.9 to 25 ns is observed. For high B and low values of the filling factor ν, the energy relaxation rate τ −1e oscillates. The depth of these oscillations and the positions of maxima depend on the filling factor ν. For ν>5, the relaxation rate τ −1e is maximum when the Fermi level lies in the region of the localized states between the Landau levels. For lower values of ν, the relaxation rate is maximum at half-integer values of τ −1e when the Fermi level is coincident with the Landau level. The characteristic features of the dependence τ −1e (B) are explained by different contributions of the intralevel and interlevel electron-phonon transitions to the process of the energy relaxation of 2D electrons.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-3640 ISBN Medium  
  Area Expedition Conference  
  Notes http://jetpletters.ru/ps/899/article_13838.shtml (“Энергетическая релаксация двумерных электронов в области квантового эффекта Холла”) Approved no  
  Call Number Serial 1559  
Permanent link to this record
 
 
Author Uchiki, Hisao; Kobayashi, Takayoshi; Sakaki, Hiroyuki openurl 
  Title Photoluminescence and energy‐loss rates in GaAs quantum wells under high‐density excitation Type Journal Article
  Year 1987 Publication J. Appl. Phys. Abbreviated Journal  
  Volume 62 Issue 3 Pages 1010-1016  
  Keywords 2DEG, GaAs/AlGaAs, heat flow, electron-phonon, hole-phonon, carrier-phonon, interactions  
  Abstract The time‐resolved luminescence spectra from excited conduction subbands in three samples of multi‐quantum‐well GaAs/AlxGa1-xAs (x=0.3 and 1) semiconductors with several well widths and barrier heights were obtained under high‐density excitations by a 30‐ps pulsed laser at 532 nm, which generated electron–hole pairs to the concentration of 1010–1013/cm2 per well per pulse at 77 K. The temperature and the Fermi energy of electron were determined by fitting best the constructed time‐resolved spectrum to the observed, and the time‐dependent electron energy was obtained by using these parameters. The energy‐loss rates of hot electrons are at least twice smaller than the calculated ones induced by the electron‐polar phonon scattering, including the screening effect due to the high carrier density.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 635  
Permanent link to this record
 
 
Author Verevkin, A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.; Smirnov, K. S.; Sobolewski, R. url  openurl
  Title Direct measurements of energy relaxation times in two-dimensional structures under quasi-equilibrium conditions Type Conference Article
  Year 2002 Publication Mater. Sci. Forum Abbreviated Journal Mater. Sci. Forum  
  Volume 384-3 Issue Pages 107-116  
  Keywords 2DEG, AlGaAs/GaAs  
  Abstract A new microwave technique was successfully applied for direct studies of energy relaxation times in two-dimensional AlGaAs/GaAs structures under quasi-equilibrium conditions in the nanosecond and picosecond time scale. We report our results of energy relaxation time measurements in the temperature range 1.6-50 K, in quantum Hall effect regime in magnetic fields up to 4 T.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference Materials Science Forum  
  Notes Approved no  
  Call Number Serial 1536  
Permanent link to this record
 
 
Author Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. url  doi
openurl 
  Title Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time Type Journal Article
  Year 1996 Publication Phys. Rev. B Condens. Matter. Abbreviated Journal Phys. Rev. B Condens. Matter.  
  Volume 53 Issue 12 Pages R7592-R7595  
  Keywords 2DEG, AlGaAs/GaAs heterostructures  
  Abstract We present results for a method to measure directly the energy relaxation time (τe) for electrons in a single AlxGa1−xAs/GaAs heterojunction; measurements were performed from 1.6 to 15 K under quasiequilibrium conditions. We find τeαT−1 below 4 K, and τe independent of T above 4 K. We have also measured the energy-loss rate, ⟨Q⟩, by the Shubnikov-de Haas technique, and find ⟨Q⟩α(T3e−T3) for T<~4.2 K; Te is the electron temperature. The values and temperature dependence of τe and ⟨Q⟩ for T<4 K agree with calculations based on piezoelectric and deformation potential acoustic phonon scattering. At 4.2 K, we can also estimate the momentum relaxation time, τm, from our measured τe. This leads to a preliminary estimate of the phonon-limited mobility at 4.2 K of μ=3×107 cm2/Vs (ns=4.2×1011 cm−2), which agrees well with published numerical calculations, as well as with an earlier indirect estimate based on measurements on a sample with much higher mobility.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0163-1829 ISBN Medium  
  Area Expedition Conference  
  Notes PMID:9982274 Approved no  
  Call Number Serial 1612  
Permanent link to this record
 
 
Author Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. url  doi
openurl 
  Title Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions Type Journal Article
  Year 1996 Publication Surface Science Abbreviated Journal Surface Science  
  Volume 361-362 Issue Pages 569-573  
  Keywords 2DEG, AlGaAs/GaAs heterostructures  
  Abstract For the first time, results are presented of a direct measurement of the energy relaxation time τε of 2D electrons in an AlGaAs/GaAs heterojunction at T = 1 and 5–20 K. A weak temperature dependence of τε for the T > 4K range and a linear temperature dependence of the reciprocal of τε for T < 4K have been observed. The linear dependence τε−1 ≈ T in the Bloch-Gruneisen regime is direct evidence of the predominance of the piezo-electric mechanism of electron-phonon interaction in non-elastic electron scattering processes. The values of τε in this regime are in very good agreement with the results of the Karpus theory. At higher temperatures, where the deformation-potential scattering becomes noticeable, a substantial disagreement between the experimental data and the theoretical results is observed.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0039-6028 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1609  
Permanent link to this record
 
 
Author Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Yngvesson, K. S. url  openurl
  Title Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure Type Conference Article
  Year 1997 Publication Proc. 4-th Int. Semicond. Device Research Symp. Abbreviated Journal Proc. 4-th Int. Semicond. Device Research Symp.  
  Volume Issue Pages 163-166  
  Keywords S-2DEG-S HEB mixers, detectors, AlGaAs/GaAs heterostructures, NbN  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1603  
Permanent link to this record
 
 
Author Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. url  openurl
  Title Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range Type Conference Article
  Year 1997 Publication Proc. 4-th Int. Semicond. Device Research Symp. Abbreviated Journal Proc. 4-th Int. Semicond. Device Research Symp.  
  Volume Issue Pages 55-58  
  Keywords 2DEG, AlGaAs/GaAs heterostructures  
  Abstract  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1602  
Permanent link to this record
 
 
Author Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. url  doi
openurl 
  Title Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K Type Journal Article
  Year 1996 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 64 Issue 5 Pages 404-409  
  Keywords 2DEG, AlGaAs/GaAs heterostructures  
  Abstract The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-3640 ISBN Medium  
  Area Expedition Conference  
  Notes http://jetpletters.ru/ps/981/article_14955.shtml (“Прямые измерения времен энергетической релаксации на гетерогранице AlGaAs/GaAs в диапазоне 4.2 – 50 К”) Approved no  
  Call Number Serial 1608  
Permanent link to this record
 
 
Author Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. url  doi
openurl 
  Title Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts Type Journal Article
  Year 1999 Publication Semicond. Abbreviated Journal Semicond.  
  Volume 33 Issue 5 Pages 551-554  
  Keywords 2DEG, AlGaAs/GaAs heterostructures  
  Abstract The conductivity of hybrid microstructures with superconducting contacts made of niobium nitride to a semiconductor with a two-dimensional electron gas in a AlGaAs/GaAs heterostructure has been investigated. Distinctive features of the behavior of the conductivity indicate the presence of multiple Andreev reflection at scattering centers in the normal region near the superconductor-semiconductor boundary.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1063-7826 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1571  
Permanent link to this record
 
 
Author Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. url  openurl
  Title Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures Type Journal Article
  Year 1995 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 61 Issue 7 Pages 591-595  
  Keywords 2DEG, AlGaAs/GaAs heterostructures  
  Abstract The energy relaxation time of 2D electrons, Te, has been measured under quasiequilibrium conditions in AlGaAs—GaAs heterojunctions over the temperature range T= 1.5—20 K. At T> 4 K, Te depends only weakly on the temperature, while at T< 4 K 7;'(T) there is a dependence fr; lNT. A linear dependence 7: 1 (T) in the Bloch—-Grfineisen temperature region (T< 5 K) is unambiguous evidence that a piezoacoustic mechanism of an electron—phonon interaction is predominant in the inelastic scattering of electrons. The values of T6 in this temperature range agree very accurately with theoretical results reported by Karpus [Sov. Phys. Semicond. 22 (1988)]. At higher temperatures, where scat—tering by deformation acoustic phonons becomes substantial, there is a significant discrepancy between the experimental and theoretical re-sults.  
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  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1624  
Permanent link to this record
 
 
Author Гольцман, Г. Н.; Смирнов, К. В. url  openurl
  Title По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах Type Journal Article
  Year 2001 Publication Письма в ЖЭТФ Abbreviated Journal Письма в ЖЭТФ  
  Volume 74 Issue 9 Pages 532-538  
  Keywords 2DEG, AlGaAs/GaAs heterostructures  
  Abstract Рассмотрены теоретические и экспериментальные работы, посвященные изучению электрон-фононного взаимодействия в двумерном электронном газе полупроводниковых гетероструктур при низких температурах в случае сильного разогрева в электрическом поле, в квазиравновесных условиях и в квантующем магнитном поле, перпендикулярном 2D слою.  
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  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Duplicated as 1541: “Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures” Approved no  
  Call Number Serial 1832  
Permanent link to this record
 
 
Author Смирнов, К. В. url  openurl
  Title AlGaAs/GaAs смеситель на эффекте разогрева двумерных электронов для тепловизора субмиллиметрового диапазона Type Abstract
  Year 2003 Publication Тезисы докладов VI Российской конференции по физике полупроводников Abbreviated Journal  
  Volume Issue Pages 181  
  Keywords 2DEG, AlGaAs/GaAs heterostructures, mixer  
  Abstract  
  Address ФТИ им. А. Ф. Иоффе, Санк-Петербург  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference VI Российской конференции по физике полупроводников (27-31 октября)  
  Notes Unconfirmed; Сама конференция, однако, была -- её упоминают: [http://www.nsc.ru/HBC/article.phtml?nid=271&id=17], [https://www.isp.nsc.ru/institut/nauchnye-podrazdeleniya/lab-20/publikatsii/2003], [http://www.ioffe.ru/sem_tech/sem%5Fteh%5Fmovpe%5Fpublications%5Fru.htm#R2003], [https://istina.ips.ac.ru/collections/828771/] Approved no  
  Call Number Serial 1837  
Permanent link to this record
 
 
Author Смирнов, Константин Владимирович url  openurl
  Title Энергетическая релаксация электронов в 2D-канале гетеропереходов GAAS/ALGAAS и транспортные процессы в структурах полупроводник-сверхпроводник на их основе Type Manuscript
  Year 2000 Publication М. МПГУ Abbreviated Journal  
  Volume Issue Pages  
  Keywords 2DEG, AlGaAs/GaAs heterostructures, NbN films  
  Abstract Диссертация посвящена изучению электрон-фононного взаимодействия в двумерном электронном газе, образующемся на границе раздела полупроводников AlGaAs и GaAs, а также созданию на основе гетероперехода GaAs/AlGaAs и сверхпроводника NbN гибридных структур сверхпроводник-полупроводник-сверхпроводник и изучению их электрофизических свойств.  
  Address Москва, МПГУ  
  Corporate Author Thesis Ph.D. thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1830  
Permanent link to this record
 
 
Author Смирнов, Константин Владимирович; Чулкова, Галина Меркурьевна; Вахтомин, Юрий Борисович; Корнеев, Александр Александрович; Окунев, Олег Валерьевич; Дивочий, Александр Валерьевич; Семенов, Александр Владимирович; Гольцман, Григорий Наумович url  isbn
openurl 
  Title Особенности разогрева и релаксации горячих электронов О-754 в тонкопленочных cверхпроводниковых наноструктурах и 2D полупроводниковых гетероструктурах при поглощении излучения инфракрасного и терагерцового диапазонов Type Book Whole
  Year 2014 Publication Abbreviated Journal  
  Volume Issue Pages  
  Keywords 2DEG  
  Abstract В монографии рассмотрены основные особенности эффекта электронного разогрева в тонких сверхпроводниковых пленках и полупроводниковых гетеропереходах, возникающего при поглощении носителями заряда излучений терагерцового и инфракрасного диапазонов.

Значительная часть монографии посвящена представлению современных достижений при использовании указанного эффекта для создания приемных устройств с рекордными характеристиками: терагерцовых гетеродинных и болометрических приемников на основе сверхпроводниковых и полупроводниковых структур; сверхпроводниковых приемников одиночных ИК фотонов. В работе также подробно рассмотрены основы современной сверхпроводниковой тонкопленочной технологии.

Монография может быть полезна студентам старших курсов, аспирантам и начинающим исследователям, работающим в области физики твердого тела, оптики, радиофизики.		  
  Address Москва  
  Corporate Author Thesis  
  Publisher МПГУ Place of Publication Editor  
  Language Russian Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN 978-5-4263-0145-0 Medium  
  Area Expedition Conference  
  Notes 240 страниц Approved no  
  Call Number Serial 1814  
Permanent link to this record
 
 
Author Чулкова, Г. М.; Корнеев, А. А.; Смирнов, К. В.; Окунев, О. В. url  isbn
openurl 
  Title Энергетическая релаксация в примесных металлах, двумерном электронном газе в AlGaAs-GaAs, сверхпроводниковых пленках NbN и детекторы субмиллиметрового и ик излучения на их основе Type Book Whole
  Year 2012 Publication Abbreviated Journal  
  Volume Issue Pages  
  Keywords 2DEG, AlGaAs/GaAs, NbN detectors  
  Abstract Монография посвящена обзору исследований влияния эффектов электронного беспорядка на электронное взаимодействие в металлах, сверхпроводниках, полупроводниках, а также в различных низкоразмерных структурах. Актуальность поднятых в монографии вопросов определяется интенсивным развитием нанотехнологий, созданием новых наноструктурированных материалов и уникальных наноэлементов для электроники и фотоники. Упругое электронное рассеяние на границах наноструктур качественно меняет взаимодействие электронов с фонолами, что, безусловно, должно учитываться при проектировании соответствующей элементной базы. Прикладная часть работы посвящена контролируемой модификации электронных процессов для оптимизации новых наносенсоров на основе электронного разогрева в сверхпроводниковых и полупроводниковых структурах. Монография предназначена для студентов старших курсов, аспирантов и начинающих следователей, работающих в области сверхпроводниковой наноэлектроники.  
  Address Москва  
  Corporate Author Thesis  
  Publisher Прометей, МПГУ Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN 978-5-4263-0118-4 Medium  
  Area Expedition Conference  
  Notes УДК: 537.311 Approved no  
  Call Number Serial 1818  
Permanent link to this record
 
 
Author Шангина, Е. Л.; Смирнов, К. В.; Морозов, Д. В.; Ковалюк, В. В.; Гольцман, Г. Н.; Веревкин, А. А.; Торопов, А. И. openurl 
  Title Концентрационная зависимость полосы преобразования смесителей субмиллиметрового диапазона на основе наноструктур AlGaAs/GaAs Type Journal Article
  Year 2010 Publication Изв. РАН Сер. Физ. Abbreviated Journal Изв. РАН Сер. Физ.  
  Volume 74 Issue 1 Pages 110-112  
  Keywords 2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth  
  Abstract Методом субмиллиметровой спектроскопии с высоким временным разрешением при Т = 4.2 К измерена концентрационная зависимость полосы преобразования гетеродинного детектирования гетероструктур AlGaAs/GaAs с двумерным электронным газом. С увеличением концентрации двумерных электронов ns = (1.6–6.6) · 1011см-2 ширина полосы преобразования f3dB уменьшается от 245 до 145 МГц. В исследованной области концентраций наблюдается зависимость f3dB , обусловленная рассеянием электронов на деформационном потенциале акустических фононов и пьезоэлектрическим рассеянием.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Russian Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Duplicated as 1217 Approved no  
  Call Number RPLAB @ gujma @ Serial 642  
Permanent link to this record
 
 
Author Шангина, Е. Л.; Смирнов, К. В.; Морозов, Д. В.; Ковалюк, В. В.; Гольцман, Г. Н.; Веревкин, А. А.; Торопов, А. И. url  openurl
  Title Полоса и потери преобразования полупроводникового смесителя с фононным каналом охлаждения двумерных электронов Type Journal Article
  Year 2010 Publication Физика и техника полупроводников Abbreviated Journal  
  Volume 44 Issue 11 Pages 1475-1478  
  Keywords 2DEG, AlGaAs/GaAs heterostructures mixers  
  Abstract Методом субмиллиметровой спектроскопии с высоким временным разрешением измерены температурная и концентрационная зависимости полосы преобразования смесителей терагерцового диапазона AlGaAs/GaAs на разогреве двумерных электронов с фононным каналом их охлаждения. Полоса преобразования на уровне 3 дБ (f3 dB) при 4.2 K при изменении концентрации ns варьируется в пределах 150-250 МГц в соответствии со степенным законом f3 dB propto ns-0.5, что соответствует доминирующему механизму рассеяния на пьезоэлектрических фононах. Минимальное значение коэффициента потерь преобразования полупроводникового смесителя достигается в структурах с высокой подвижностью носителей mu>3·105 см2/В·с при 4.2 K.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Duplicated as 1216 Approved no  
  Call Number RPLAB @ gujma @ Serial 702  
Permanent link to this record
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