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Author |
Bell, Matthew; Sergeev, Andrei; Goltsman, Gregory; Bird, Jonathan; Verevkin, Aleksandr |
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Title |
Transition-edge sensors based on superconducting nanowires |
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Abstract |
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Year |
2006 |
Publication |
Proc. APS March Meeting |
Abbreviated Journal |
Proc. APS March Meeting |
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B38.00001 |
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Keywords |
NbN nanowire TES |
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We present our experimental study of superconducting NbN nanowire-based sensor. The responsivity of the sensor is strongly affected by the superconducting transition width of the nanostructure, which, in turn, is determined by the phase slip centers (PCSs) dynamics. The fluctuations and noise properties of the sensor are also discussed, as well as the devices' behavior at high magnetic fields. The ultimate performance of the sensor and prospects of the devices will be discussed, as well. |
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1455 |
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Bennett, Douglas A.; Schmidt, Daniel R.; Swetz, Daniel S.; Ullom, Joel N. |
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Title |
Phase-slip lines as a resistance mechanism in transition-edge sensors |
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Journal Article |
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Year |
2014 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
104 |
Issue |
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Pages |
042602 |
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Keywords |
microbolometers, TES, phase-slip lines, PSL |
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Abstract |
The fundamental mechanism of resistance in voltage-biased superconducting films is poorly understood despite its importance as the basis of transition-edge sensors (TESs). TESs are utilized in state-of-the-art microbolometers and microcalorimeters covering a wide range of energies and applications. We present a model for the resistance of a TES based on phase-slip lines (PSLs) and compare the model to data. One of the model's predictions, discrete changes in the number of PSLs, is a possible explanation for the observed switching between discrete current states in localized regions of bias. |
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Recommended by Klapwijk |
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929 |
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Author |
Galeazzi, Massimiliano |
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Title |
Fundamental noise processes in TES devices |
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Journal Article |
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Year |
2011 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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Volume |
21 |
Issue |
3 |
Pages |
267-271 |
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Keywords |
TES, Johnson noise, phonon noise, excess noise, flux-flow noise, thermal fluctuation noise |
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Abstract |
Microcalorimeters and bolometers are noise-limited devices, therefore, a proper understanding of all noise sources is essential to predict and interpret their performance. In this paper, I review the fundamental noise processes contributing to Transition Edge Sensor (TES) microcalorimeters and bolometers and their effect on device performance. In particular, I will start with a simple, monolithic device model, moving to a more complex one involving discrete components, to finally move to today's more realistic, comprehensive model. In addition to the basic noise contribution (equilibrium Johnson noise and phonon noise), TES are significantly affected by extra noise, which is commonly referred to as excess noise. Different fundamental processes have been proposed and investigated to explain the origin of this excess noise, in particular near equilibrium non-linear Johnson noise, flux-flow noise, and internal thermal fluctuation noise. Experimental evidence shows that all three processes are real and contribute, at different levels, to the TES noise, although different processes become important at different regimes. It is therefore time to discard the term “excess noise” and consider these terms part of the “fundamental noise processes” instead. |
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Recommended by Klapwijk |
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914 |
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Author |
Gershenzon, E.; Goltsman, G.; Orlov, L.; Ptitsina, N. |
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Title |
Population of excited-states of small admixtures in germanium |
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Conference Article |
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Year |
1978 |
Publication |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
Abbreviated Journal |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
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Volume |
42 |
Issue |
6 |
Pages |
1154-1159 |
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Ge, excited states, admixtures |
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Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia |
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1723 |
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Gershenzon, E. M.; Gol'tsman, G. N. |
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Title |
Transitions of electrons between excited states of donors in germanium |
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Journal Article |
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Year |
1971 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
14 |
Issue |
2 |
Pages |
63-65 |
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Ge, donors, excited states |
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1740 |
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Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. |
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Title |
Investigation of population and ionization of donor excited states in Ge |
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Conference Article |
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1976 |
Publication |
Physics of Semiconductors |
Abbreviated Journal |
Physics of Semiconductors |
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631-634 |
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Ge, donor excited states |
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Amsterdam |
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North-Holland Publishing Co. |
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1732 |
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Author |
Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
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Title |
Investigation of excited donor states in GaAs |
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Journal Article |
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Year |
1974 |
Publication |
Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
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Volume |
7 |
Issue |
10 |
Pages |
1248-1250 |
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GaAs, excited donor states |
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Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa |
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1733 |
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Author |
Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. |
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Title |
Absorption spectra in electron transitions between excited states of impurities in germanium |
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Journal Article |
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1975 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
22 |
Issue |
4 |
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95-97 |
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Ge, impurities, excited states, absorption spectra |
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no |
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1773 |
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Author |
Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. |
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Title |
Carrier lifetime in excited states of shallow impurities in germanium |
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Journal Article |
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Year |
1977 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
25 |
Issue |
12 |
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539-543 |
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Ge, shallow impurities, excited states |
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no |
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1726 |
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Gorokhov, G.; Bychanok, D.; Gayduchenko, I.; Rogov, Y.; Zhukova, E.; Zhukov, S.; Kadyrov, L.; Fedorov, G.; Ivanov, E.; Kotsilkova, R.; Macutkevic, J.; Kuzhir, P. |
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Title |
THz spectroscopy as a versatile tool for filler distribution diagnostics in polymer nanocomposites |
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Journal Article |
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Year |
2020 |
Publication |
Polymers (Basel) |
Abbreviated Journal |
Polymers (Basel) |
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12 |
Issue |
12 |
Pages |
3037 (1 to 14) |
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THz spectroscopy; nanocomposites, percolation threshold, time-domain spectroscopy, time-domain spectrometer, TDS |
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Abstract |
Polymer composites containing nanocarbon fillers are under intensive investigation worldwide due to their remarkable electromagnetic properties distinguished not only by components as such, but the distribution and interaction of the fillers inside the polymer matrix. The theory herein reveals that a particular effect connected with the homogeneity of a composite manifests itself in the terahertz range. Transmission time-domain terahertz spectroscopy was applied to the investigation of nanocomposites obtained by co-extrusion of PLA polymer with additions of graphene nanoplatelets and multi-walled carbon nanotubes. The THz peak of permittivity's imaginary part predicted by the applied model was experimentally shown for GNP-containing composites both below and above the percolation threshold. The physical nature of the peak was explained by the impact on filler particles excluded from the percolation network due to the peculiarities of filler distribution. Terahertz spectroscopy as a versatile instrument of filler distribution diagnostics is discussed. |
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Institute of Photonics, University of Eastern Finland, Yliopistokatu 7, FI-80101 Joensuu, Finland |
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English |
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2073-4360 |
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PMID:33353036; PMCID:PMC7767186 |
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1780 |
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Hartogh, P.; Jarchow, C.; Lellouch, E.; de Val-Borro, M.; Rengel, M.; Moreno, R.; Medvedev, A. S.; Sagawa, H.; Swinyard, B. M.; Cavalié, T.; Lis, D. C.; BłÄ™cka, M. I.; Banaszkiewicz, M.; Bockelée-Morvan, D.; Crovisier, J.; Encrenaz, T.; Küppers, M.; Lara, L.-M.; Szutowicz, S.; Vandenbussche, B.; Bensch, F.; Bergin, E. A.; Billebaud, F.; Biver, N.; Blake, G. A.; Blommaert, J. A. D. L.; Cernicharo, J.; Decin, L.; Encrenaz, P.; Feuchtgruber, H.; Fulton, T.; de Graauw, T.; Jehin, E.; Kidger, M.; Lorente, R.; Naylor, D. A.; Portyankina, G.; Sánchez-Portal, M.; Schieder, R.; Sidher, S.; Thomas, N.; Verdugo, E.; Waelkens, C.; Whyborn, N.; Teyssier, D.; Helmich, F.; Roelfsema, P.; Stutzki, J.; LeDuc, H. G.; Stern, J. A. |
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Title |
Herschel/HIFI observations of Mars: First detection of O2 at submillimetre wavelengths and upper limits on HCl and H2O2 |
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Journal Article |
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2010 |
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Astron. Astrophys. |
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521 |
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L49 |
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HEB mixer applications, HIFI, Herschel, planets and satellites: atmospheres / radiative transfer / submillimeter: general / molecular processes |
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We report on an initial analysis of Herschel/HIFI observations of hydrogen chloride (HCl), hydrogen peroxide (H2O2), and molecular oxygen (O2) in the Martian atmosphere performed on 13 and 16 April 2010 (Ls ~ 77°). We derived a constant volume mixing ratio of 1400 ± 120 ppm for O2 and determined upper limits of 200 ppt for HCl and 2 ppb for H2O2. Radiative transfer model calculations indicate that the vertical profile of O2 may not be constant. Photochemical models determine the lowest values of H2O2 to be around Ls ~ 75° but overestimate the volume mixing ratio compared to our measurements. |
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1093 |
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Author |
Hoevers, H. F. C.; Bento, A. C.; Bruijn, M. P.; Gottardi, L.; Korevaar, M. A. N.; Mels, W. A.; de Korte, P. A. J. |
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Title |
Thermal fluctuation noise in a voltage biased superconducting transition edge thermometer |
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Journal Article |
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Year |
2000 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
77 |
Issue |
26 |
Pages |
4421-4424 |
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Keywords |
TES; bolometer; thermal fluctuation noise; TFN |
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The current noise at the output of a microcalorimeter with a voltage biased superconducting transition edge thermometer is studied in detail. In addition to the two well-known noise sources: thermal fluctuation noise from the heat link to the bath and Johnson noise from the resistive thermometer, a third noise source strongly correlated with the steepness of the thermometer is required to fit the measured noise spectra. Thermal fluctuation noise, originating in the thermometer itself, fully explains the additional noise. A simple model provides quantitative agreement between the observed and calculated noise spectra for all bias points in the superconducting transition. |
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RPLAB @ gujma @ |
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759 |
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Author |
Kooi, Jacob Willem |
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Title |
Advanced receivers for submillimeter and far infrared astronomy |
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Book Whole |
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2008 |
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University of Groningen |
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RUG |
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HEB, SIS, TES, NEP, noise temperature, IF bandwidth, waveguide, impedance, conversion gain, FTS, integrated array, stability, Allan variance, multi-layer antireflection coating |
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Doctoral thesis |
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978-90-367-3653-4 |
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881 |
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Manus, M. K. Mc; Kash, J. A.; Steen, S. E.; Polonsky, S.; Tsang, J.C.; Knebel, D. R.; Huott, W. |
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PICA: Backside failure analysis of CMOS circuits using picosecond imaging circuit analysis |
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Journal Article |
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2000 |
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Microelectronics Reliability |
Abbreviated Journal |
Microelectronics Reliability |
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40 |
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1353-1358 |
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SSPD, CMOS testing |
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Normal operation of complementary metal-oxide semiconductor (CMOS) devices entails the emission of picosecond pulses of light, which can be used to diagnose circuit problems. The pulses that are observed from submicron sized field effect transistors (FETs) are synchronous with logic state switching. Picosecond Imaging Circuit Analysis (PICA), a new optical imaging technique combining imaging with timing, spatially resolves individual devices at the 0.5 micron level and switching events on a 10 picosecond timescale. PICA is used here for the diagnostics of failures on two VLSI microprocessors. |
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1054 |
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Miller, Aaron J.; Lita, Adriana E.; Calkins, Brice; Vayshenker, Igor; Gruber, Steven M.; Nam, Sae Woo |
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Compact cryogenic self-aligning fiber-to-detector coupling with losses below one percent |
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2011 |
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Optics Express |
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Opt. Express |
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19 |
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10 |
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9102-9110 |
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TES |
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We present a compact packaging technique for coupling light from a single-mode telecommunication fiber to cryogenic single-photon sensitive devices. Our single-photon detectors are superconducting transition-edge sensors (TESs) with a collection area only a factor of a few larger than the area of the fiber core which presents significant challenges to low-loss fiber-to-detector coupling. The coupling method presented here has low loss, cryogenic compatibility, easy and reproducible assembly and low component cost. The system efficiency of the packaged single-photon counting detectors is verified by the “triplet method†of power-source calibration along with the “multiple attenuator†method that produces a calibrated single-photon flux. These calibration techniques, when used in combination with through-wafer imaging and fiber back-reflection measurements, give us confidence that we have achieved coupling losses below 1 % for all devices packaged according to the self-alignment method presented in this paper. |
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RPLAB @ gujma @ |
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666 |
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Prober, D. E. |
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Superconducting terahertz mixer using a transition-edge microbolometer |
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1993 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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62 |
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17 |
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2119-2121 |
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HEB mixer, NbN, TES |
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Recommended by Klapwijk |
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244 |
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Samsonova, Alena; Zolotov, Philipp; Baeva, Elmira; Lomakin, Andrey; Titova, Nadezhda; Kardakova, Anna; Goltsman, Gregory |
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Signatures of surface magnetic disorder in thin niobium films |
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2021 |
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IEEE Trans. Appl. Supercond. |
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1-1 |
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Temperature measurement, Temperature dependence, Superconducting magnets, Superconducting transition temperature, Substrates, Resistance, Scattering |
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We present our studies on the evolution of the normal and superconducting properties with thickness of thin Nb films with a low level of non-magnetic disorder (kFl 150 for the thickest film in the set). The analysis of the superconducting behavior points to the presence of magnetic moments, hidden in the native oxide on the surface of Nb films. Using the Abrikosov-Gorkov theory, we obtain the density of surface magnetic moments of 1013 cm-2, which is in agreement with the previously reported data for Nb films. |
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1051-8223 |
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1162 |
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Shcherbatenko, Michael; Lobanov, Yury; Finkel, Matvey; Maslennikov, Sergey; Pentin, Ivan; Semenov, Alexander; Titova, Nadezhda; Kaurova, Natalya; Voronov, Boris M.; Rodin, Alexander; Klapwijk, Teunis M.; Gol’tsman, Gregory N. |
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Development of a 30 THz heterodyne receiver based on a hot-electron-bolometer mixer |
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2014 |
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Proc. 25th Int. Symp. Space Terahertz Technol. |
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Proc. 25th Int. Symp. Space Terahertz Technol. |
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122 |
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mid-IR NbN HEB mixers, GaAs substrates |
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We present new Hot-Electron-Bolometer (HEB) mixers designed for mid-IR spectroscopy targeting astrophysical and geophysical observations where high sensitivity and spectral resolution are required. The mixers are made of an ultrathin NbN film deposited on GaAs substrates. Two entirely different types of the devices have been fabricated. The first type is based on a direct radiation coupling concept and the mixing devices are shaped as squares of 5×5 μm 2 (which corresponds to the diffraction limit at the chosen wavelength) and 10×10 μm 2 (which was used to establish a possible influence of the contact pads on the radiation absorption). The second type utilizes a spiral antenna designed with HFSS. The fabrication and layout of the devices as well as the performance comparison will be presented. During the experiments, the HEB mixer was installed on the cold plate of a LHe cryostat. A germanium window and an extended semi-spherical germanium lens are used to couple the radiation. The cryostat is equipped with a germanium optical filter of thickness 0.5 mm and with a center wavelength of 10.6 mμ. The incident power absorption is measured by using the isothermal method. As a Local Oscillator, a 10.6 micrometers line of a CO2 gas laser is used. We further characterize the frequency response of the spiral antenna with a FIR-spectrometer. The noise characteristics of the mixers are determined from a room temperature cold load and a heated black body at ~600 K as a hot load. |
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1364 |
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Stellari, Franco; Song, Peilin |
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Testing of ultra low voltage CMOS microprocessors using the superconducting single-photon detector (SSPD) |
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2005 |
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Proc. 12th IPFA |
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Proc. 12th IPFA |
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2 |
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SSPD, CMOS testing |
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In F. Stellari and P. Song (2004) the authors have shown a comparison among different detectors used for diagnosing integrated circuits (ICs) by means of the PICA method. In their experiments they used two versions of the SSPD detector (p-SSPD is a prototype version, while c-SSPD is the first commercially available generation of the detector as presented in W. K. Lo et al. (2002), as well as the imaging detector (S-25 photo-multiplier tube (PMT) as discussed in W. G. McMullan (1987)) used in the conventional PICA technique. A microprocessor chip fabricated in a 0.13 μm 1.2 V technology is used to show that c-SSPD provides a significant reduction in acquisition time for the collection of optical waveforms from chips running at very low. In this paper, the authors summarize the main results. |
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IEEE |
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0-7803-9301-5 |
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1055 |
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Steudle, Gesine A.; Schietinger, Stefan; Höckel, David; Dorenbos, Sander N.; Zadeh, Iman E.; Zwiller, Valery; Benson, Oliver |
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Measuring the quantum nature of light with a single source and a single detector |
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2012 |
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Phys. Rev. A |
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86 |
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5 |
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053814 |
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SSPD, SNSPD, saturation count rates, dead time, dynamic range |
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An elementary experiment in optics consists of a light source and a detector. Yet, if the source generates nonclassical correlations such an experiment is capable of unambiguously demonstrating the quantum nature of light. We realized such an experiment with a defect center in diamond and a superconducting detector. Previous experiments relied on more complex setups, such as the Hanbury Brown and Twiss configuration, where a beam splitter directs light to two photodetectors, creating the false impression that the beam splitter is a fundamentally required element. As an additional benefit, our results provide a simplification of the widely used photon-correlation techniques. |
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American Physical Society |
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1089 |
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Titova, N; Kardakova, A.; Tovpeko, N; Ryabchun, S.; Mandal, S.; Morozov, D.; Klemencic, G. M.; Giblin, S.R.; Williams, O. A.; Goltsman, G. N. |
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Superconducting diamond films as perspective material for direct THz detectors |
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2017 |
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Proc. 28th Int. Symp. Space Terahertz Technol. |
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Proc. 28th Int. Symp. Space Terahertz Technol. |
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82 |
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KID, HEB, superconducting diamond films, boron-doped diamond films, Al, TiN, Si substrates, NEP |
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Superconducting films with a high resistivity in the normal state have established themselves as the best materials for direct THz radiation sensors, such as kinetic inductance detectors (KIDs) [1] and hot electron bolometers (nano-HEBs) [2]. The primary characteristics of the future instrument such as the sensitivity and the response time are determined by the material parameters such as the electron-phonon (e-ph) interaction time, the electron density and the resistivity of the material. For direct detectors, such as KIDs and nano-HEBs, to provide a high sensitivity and low noise one prefer materials with long e-ph relaxation times and low values of the electron density. As a potential material for THz radiation detection we have studied superconducting diamond films. A significant interest to diamond for the development of electronic devices is due to the evolution of its properties with the boron dopant concentration. At a high boron doping concentration, n B ~5·10 20 cm -3 , diamond has been reported to become a superconducting with T c depending on the doping level. Our previous study of energy relaxation in single-crystalline boron-doped diamond films epitaxially grown on a diamond shows a remarkably slow energy-relaxation at low temperatures. The electron-phonon cooling time varies from 400 ns to 700 ns over the temperature range 2.2 K to 1.7 K [3]. In superconducting materials such as Al and TiN, traditionally used in KIDs, the e-ph cooling times at 1.7 K correspond to ~20 ns [4] and ~100 ns [5], correspondingly. Such a noticeable slow e-ph relaxation in boron-doped diamond, in combination with a low value of carrier density (~10 21 cm -3 ) in comparison with typical metals (~10 23 cm -3 ) and a high normal state resistivity (~1500 μΩ·cm) confirms a potential of superconducting diamond for superconducting bolometers and resonator detectors. However, the price and the small substrate growth are of single crystal diamond limit practical applications of homoepitaxial diamond films. As an alternative way with more convenient technology, one can employ heteroepitaxial diamond films grown on large-size Si substrates. Here we report about measurements of e-ph cooling times in superconducting diamond grown on silicon substrate and discuss our expectations about the applicability of boron-doped diamond films to superconducting detectors. Our estimation of limit value of noise-equivalent power (NEP) and the energy resolution of bolometer made from superconducting diamond is order 10 -17 W/Hz 1/2 at 2 K and the energy resolution is of 0.1 eV that corresponds to counting single-photon up to 15 um. The estimation was obtained by using the film thickness of 70 nm and ρ ~ 1500 μΩ·cm, and the planar dimensions that are chosen to couple bolometer with 75 Ω log-spiral antenna. Although the value of NEP is far yet from what might like to have for certain astronomical applications, we believe that it can be improved by a suitable fabrication process. Also the direct detectors, based on superconducting diamond, will offer low noise performance at about 2 K, a temperature provided by inexpensive close-cycle refrigerators, which provides another practical advantage of development and application of these devices. [1] P.K. Day, et. al, Nature, 425, 817, 2003. [2] J. Wei, et al, Nature Nanotech., 3, 496, 2008. [3] A. Kardakova, et al, Phys. Rev. B, 93, 064506, 2016. [4] P. Santhanam and D. Prober, Phys. Rev. B, 29, 3733, 1984 [5] A. Kardakova, et al, Appl. Phys. Lett, vol. 103, p. 252602, 2013. |
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1173 |
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Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
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Silicon room temperature IR detectors coated with Ag2S quantum dots |
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2019 |
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Proc. IWQO |
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Proc. IWQO |
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369-371 |
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silicon detector, quantum dot, IR, surface states |
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For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications. |
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