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Verevkin, A., Zhang, J., Slysz, W., Sobolewski, R., Lipatov, A., Okunev, O., et al. (2002). Spectral sensitivity and temporal resolution of NbN superconducting single-photon detectors. In Proc. 13th Int. Symp. Space Terahertz Technol. (pp. 105–111).
Abstract: We report our studies on spectral sensitivity and time resolution of superconducting NbN thin film single-photon detectors (SPDs). Our SPDs exhibit an everimentally measured detection efficiencies (DE) from — 0.2% at 2=1550 nm up to —3% at lambda=405 nm wavelength for 10-nm film thickness devices and up to 3.5% at lambda=1550 nm for 3.5-nm film thickness devices. Spectral dependences of detection efficiency (DE) at 2=0.4 —3.0 pm range are presented. With variable optical delay setup, it is shown that NbN SPD potentially can resolve optical pulses with the repetition rate up to 10 GHz at least. The observed full width at the half maximum (FWHM) of the signal pulse is about 150-180 ps, limited by read-out electronics. The jitter of NbN SPD is measured to be —35 ps at optimum biasing.
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Voss, C., & Raz, T. (2016). Never split the difference: negotiating as if your life depended on it. HarperCollins.
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Vystavkin, A. N. (1999). Estimation of noise equivalent power and design analysis of an andreev reflection hot-electron microbolometer for submillimeter radioastronomy. Rus. J. Radio Electron., (10).
Abstract: Results of theoretical estimations and measurements of characteristics of an Andreev reflection hot-electron microbolometer for submillimeter radioastronomy made by different researchers are reviewed and analysed. Peculiarities and characteristics of the microbolometers using two types of microthermometer for measurement of the electron temperature increment under influence of the radiation: the SIN-junction and the transition-edge sensor (TES) with electrothermal feedback – are compared. Advantages of the microbolometer with the second type of the microthermometer when the TES is used simultaneously as the absorber of radiation are shown. Methods of achievement of the best noise equivalent power of the microbolometer in such version as well as methods of the matching the microbolometer with the incident radiation flow using planar antennas and with the channel of output signal measurement using a SQUID-picoammeter are considered.
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Zhang, X., Lita, A. E., Smirnov, K., Liu, H. L., Zhu, D., Verma, V. B., et al. (2020). Strong suppression of the resistivity near the superconducting transition in narrow microbridges in external magnetic fields. Phys. Rev. B, 101(6), 060508 (1 to 6).
Abstract: We have investigated a series of superconducting bridges based on homogeneous amorphous WSi and MoSi films, with bridge widths w ranging from 2 to 1000μm and film thicknesses d∼4−6 and 100 nm. Upon decreasing the bridge widths below the respective Pearl lengths, we observe in all cases distinct changes in the characteristics of the resistive transitions to superconductivity. For each of the films, the resistivity curves R(B,T) separate at a well-defined and field-dependent temperature T∗(B) with decreasing the temperature, resulting in a dramatic suppression of the resistivity and a sharpening of the transitions with decreasing bridge width w. The associated excess conductivity in all the bridges scales as 1/w, which may suggest either the presence of a highly conducting region that is dominating the electric transport, or a change in the vortex dynamics in narrow enough bridges. We argue that this effect can only be observed in materials with sufficiently weak vortex pinning.
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Zolotov, P. I., Vakhtomin, Y. B., Divochiy, A. V., Seleznev, V. A., & Smirnov, K. V. (2016). Technology development of resonator-based structures for efficiency increasing of NBN detectors of IR single photons. Proc. 5th Int. Conf. Photonics and Information Optics, , 115–116.
Abstract: This paper presents a technology of fabrication of NbN superconductive single- photon detectors, using resonator structures. The main results are related to optimization of the process of NbN sputtering over substrate with metallic mirrors and SiO 2 /Si 3 N 4 layers /4 thick. Investigation of the quantum efficiency of fabricated devices at 1.6 K on 1.55 μm showed triple-magnified value compared to standard Si/NbN structures.
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