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	Author	Verevkin, A. A.; Zhang, J.; Slysz, W.; Sobolewski, R.; Lipatov, A. P.; Okunev, O.; Chulkova, G.; Korneev, A.; Gol’tsman, G. N.
	Title	Superconducting single-photon detectors for GHz-rate free-space quantum communications			Type	Conference Article
	Year	2002	Publication	Proc. SPIE	Abbreviated Journal	Proc. SPIE
	Volume	4821	Issue		Pages	447-454
	Keywords	NbN SSPD, SNSPD, single-photon detector, thin-film superconductivity, quantum cryptography, ultrafast communications
	Abstract	We report our studies on the performance of new NbN ultrathin-film superconducting single-photon detectors (SSPDs). Our SSPDs exhibit experimentally measured quantum efficiencies from 5% at wavelength λ = 1550 nm up to 10% at λ = 405 nm, with exponential, activation-energy-type spectral sensitivity dependence in the 0.4-μm – 3-μm wavelength range. Using a variable optical delay setup, we have shown that our NbN SSPDs can resolve optical photons with a counting rate up to 10 GHz, presently limited by the read-out electronics. The measured device jitter was below 35 ps under optimum biasing conditions. The extremely high photon counting rate, together with relatively high (especially for λ > 1 μm) quantum efficiency, low jitter, and very low dark counts, make NbN SSPDs very promising for free-space communications and quantum cryptography.
	Address
	Corporate Author				Thesis
	Publisher	SPIE	Place of Publication		Editor	Ricklin, J.C.; Voelz, D.G.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	Free-Space Laser Communication and Laser Imaging II
	Notes				Approved	no
	Call Number				Serial	1523
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	Author	Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Yngvesson, K. S.
	Title	Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure			Type	Conference Article
	Year	1997	Publication	Proc. 4-th Int. Semicond. Device Research Symp.	Abbreviated Journal	Proc. 4-th Int. Semicond. Device Research Symp.
	Volume		Issue		Pages	163-166
	Keywords	S-2DEG-S HEB mixers, detectors, AlGaAs/GaAs heterostructures, NbN
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1603
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	Author	Verevkin, A. A.; Pearlman, A.; Slysz, W.; Zhang, J.; Sobolewski, R.; Chulkova, G.; Okunev, O.; Kouminov, P.; Drakinskij, V.; Smirnov, K.; Kaurova, N.; Voronov, B.; Gol’tsman, G.; Currie, M.
	Title	Ultrafast superconducting single-photon detectors for infrared wavelength quantum communications			Type	Conference Article
	Year	2003	Publication	Proc. SPIE	Abbreviated Journal	Proc. SPIE
	Volume	5105	Issue		Pages	160-170
	Keywords	NbN SSPD, SNSPD, applications, single-photon detector, quantum cryptography, quantum communications, superconducting devices
	Abstract	We have developed a new class of superconducting single-photon detectors (SSPDs) for ultrafast counting of infrared (IR) photons for secure quantum communications. The devices are operated on the quantum detection mechanism, based on the photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconducting stripe. The detectors are fabricated from 3.5-nm-thick NbN films and they operate at 4.2 K inside a closed-cycle refrigerator or liquid helium cryostat. Various continuous and pulsed laser sources have been used in our experiments, enabling us to determine the detector experimental quantum efficiency (QE) in the photon-counting mode, response time, time jitter, and dark counts. Our 3.5-nm-thick SSPDs reached QE above 15% for visible light photons and 5% at 1.3 – 1.5 Î¼m infrared range. The measured real-time counting rate was above 2 GHz and was limited by the read-out electronics (intrinsic response time is <30 ps). The measured jitter was <18 ps, and the dark counting rate was <0.01 per second. The measured noise equivalent power (NEP) is 2 x 10^-18 W/Hz^1/2 at Î» = 1.3 Î¼m. In near-infrared range, in terms of the counting rate, jitter, dark counts, and overall sensitivity, the NbN SSPDs significantly outperform their semiconductor counterparts. An ultrafast quantum cryptography communication technology based on SSPDs is proposed and discussed.
	Address
	Corporate Author				Thesis
	Publisher	SPIE	Place of Publication		Editor	Donkor, E.; Pirich, A.R.; Brandt, H.E.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	Quantum Information and Computation
	Notes				Approved	no
	Call Number				Serial	1514
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	Author	Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G.
	Title	Ag₂S QDs/Si heterostructure-based ultrasensitive SWIR range detector			Type	Journal Article
	Year	2020	Publication	Nanomaterials (Basel)	Abbreviated Journal	Nanomaterials (Basel)
	Volume	10	Issue	5	Pages	1-12
	Keywords	detector; quantum dots; short-wave infrared range; silicon
	Abstract	In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology.
	Address	Laboratory of nonlinear optics, Zavoisky Physical-Technical Institute of the Russian Academy of Sciences, Kazan 420029, Russia
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	English	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	2079-4991	ISBN		Medium
	Area		Expedition		Conference
	Notes	PMID:32365694; PMCID:PMC7712218			Approved	no
	Call Number				Serial	1151
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	Author	Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G.
	Title	Silicon room temperature IR detectors coated with Ag₂S quantum dots			Type	Conference Article
	Year	2019	Publication	Proc. IWQO	Abbreviated Journal	Proc. IWQO
	Volume		Issue		Pages	369-371
	Keywords	silicon detector, quantum dot, IR, surface states
	Abstract	For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN	978-5-89513-451-1	Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1154
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	Author	Svechnikov, S. I.; Finkel, M. I.; Maslennikov, S. N.; Vachtomin, Y. B.; Smirnov, K. V.; Seleznev, V. A.; Korotetskaya, Y. P.; Kaurova, N. S.; Voronov, B. M.; Gol’tsman, G. N.
	Title	Superconducting hot electron bolometer mixer for middle IR range			Type	Conference Article
	Year	2006	Publication	Proc. 16th Int. Crimean Microwave and Telecommunication Technology	Abbreviated Journal	Proc. 16th Int. Crimean Microwave and Telecommunication Technology
	Volume	2	Issue		Pages	686-687
	Keywords	IR NbN HEB mixer, detector, GaAs substrate
	Abstract	The developed directly lens coupled hot electron bolometer (HEB) mixer was based on 5 nm superconducting NbN deposited on GaAs substrate. The layout of the structure, including 30x20 mcm^2 active area coupled with a 50 Ohm coplanar line, was patterned by photolithography. The responsivity of the mixer was measured in a direct detection mode in the 25-64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 mum wavelength CW CO2 laser was utilized as a local oscillator.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	4023440			Serial	1297
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	Author	Smirnov, K. V.; Vachtomin, Y. B.; Ozhegov, R. V.; Pentin, I. V.; Slivinskaya, E. V.; Korneev, A. A.; Goltsman, G. N.
	Title	Fiber coupled single photon receivers based on superconducting detectors for quantum communications and quantum cryptography			Type	Conference Article
	Year	2008	Publication	Proc. SPIE	Abbreviated Journal	Proc. SPIE
	Volume	7138	Issue		Pages	713827 (1 to 6)
	Keywords	SSPD, SNSPD, superconducting single photon detector, ultra-thin superconducting films, optical fiber coupling, ready to use receiver
	Abstract	At present superconducting detectors become increasingly attractive for various practical applications. In this paper we present results on the depelopment of fiber coupled receiver systems for the registration of IR single photons, optimized for telecommunication and quantum-cryptography. These receiver systems were developed on the basis of superconducting single photon detectors (SSPD) of VIS and IR wavelength ranges. The core of the SSPD is a narrow ( 100 nm) and long ( 0,5 mm) strip in the form of a meander which is patterned from a 4-nm-thick NbN film (T_C=10-11 K, j_C= 5-7â€¢10⁶ A/cm²); the sensitive area dimensions are 10Ã—10 Î¼m². The main problem to be solved while the receiver system development was optical coupling of a single-mode fiber (9 microns in diameter) with the SSPD sensitive area. Characteristics of the developed system at the optical input are as follows: quantum efficiency >10 % (at 1.3 Î¼m), >4 % (at 1.55 Î¼m); dark counts rate â‰¤1 s^-1; duration of voltage pulse â‰¤5 ns; jitter â‰¤40 ps. The receiver systems have either one or two identical channels (for the case of carrying out correlation measurements) and are made as an insert in a helium storage Dewar.
	Address
	Corporate Author				Thesis
	Publisher	Spie	Place of Publication		Editor	Tománek, P.; Senderáková, D.; Hrabovský, M.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1405
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	Author	Slysz, W.; Wegrzecki, M.; Bar, J.; Grabiec, P.; Gorska, M.; Rieger, E.; Dorenbos, P.; Zwiller, V.; Milostnaya, I.; Minaeva, O.; Antipov, A.; Okunev, O.; Korneev, A.; Smirnov, K.; Voronov, B.; Kaurova, N.; Gol’tsman, G.N.; Kitaygorsky, J.; Pan, D.; Pearlman, A.; Cross, A.; Komissarov, I.; Sobolewski, R.
	Title	Fiber-coupled NbN superconducting single-photon detectors for quantum correlation measurements			Type	Conference Article
	Year	2007	Publication	Proc. SPIE	Abbreviated Journal	Proc. SPIE
	Volume	6583	Issue		Pages	65830J (1 to 11)
	Keywords	NbN SSPD, SNSPD, superconducting single-photon detectors, single-photon detectors, fiber-coupled optical detectors, quantum correlations, superconducting devices
	Abstract	We have fabricated fiber-coupled superconducting single-photon detectors (SSPDs), designed for quantum-correlationtype experiments. The SSPDs are nanostructured ( 100-nm wide and 4-nm thick) NbN superconducting meandering stripes, operated in the 2 to 4.2 K temperature range, and known for ultrafast and efficient detection of visible to nearinfrared photons with almost negligible dark counts. Our latest devices are pigtailed structures with coupling between the SSPD structure and a single-mode optical fiber achieved using a micromechanical photoresist ring placed directly over the meander. The above arrangement withstands repetitive thermal cycling between liquid helium and room temperature, and we can reach the coupling efficiency of up to 33%. The system quantum efficiency, measured as the ratio of the photons counted by SSPD to the total number of photons coupled into the fiber, in our early devices was found to be around 0.3 % and 1% for 1.55 &mgr;m and 0.9 &mgr;m photon wavelengths, respectively. The photon counting rate exceeded 250 MHz. The receiver with two SSPDs, each individually biased, was placed inside a transport, 60-liter liquid helium Dewar, assuring uninterrupted operation for over 2 months. Since the receiver’s optical and electrical connections are at room temperature, the set-up is suitable for any applications, where single-photon counting capability and fast count rates are desired. In our case, it was implemented for photon correlation experiments. The receiver response time, measured as a second-order photon cross-correlation function, was found to be below 400 ps, with timing jitter of less than 40 ps.
	Address
	Corporate Author				Thesis
	Publisher	Spie	Place of Publication		Editor	Dusek, M.; Hillery, M.S.; Schleich, W.P.; Prochazka, I.; Migdall, A.L.; Pauchard, A.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	Photon Counting Applications, Quantum Optics, and Quantum Cryptography
	Notes				Approved	no
	Call Number				Serial	1431
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	Author	Slysz, W.; Wegrzecki, M.; Bar, J.; Grabiec, P.; Górska, M.; Latta, C.; Zwiller, V.; Pearlman, A.; Cross, A.; Korneev, A.; Kouminov, P.; Smirnov, K.; Voronov, B.; Gol’tsman, G.; Verevkin, A.; Currie, M.; Sobolewski, R.
	Title	Fiber-coupled quantum-communications receiver based on two NbN superconducting single-photon detectors			Type	Conference Article
	Year	2005	Publication	Proc. SPIE	Abbreviated Journal	Proc. SPIE
	Volume	5957	Issue		Pages	59571K (1 to 10)
	Keywords	SSPD, SNSPD, single-photon detectors, quantum communication, quantum cryptography, superconductors, infrared optical detectors
	Abstract	We present the design and performance of a novel, two-channel single-photon receiver, based on two fiber-coupled NbN superconducting single-photon detectors (SSPDs). The SSPDs are nanostructured superconducting meanders covering an area of 100 μm² and are known for ultrafast and efficient counting of single, visible-to-infrared photons. Their operation has been explained within a phenomenological hot-electron photoresponse model. Our receiver is intended for fiber-based quantum cryptography and communication systems, operational at near-infrared (NIR) telecommunication wavelengths, λ = 1.3 μm and λ = 1.55 μm. Coupling between the NbN detector and a single-mode optical fiber was achieved using a specially designed, micromechanical photoresist ring, positioned directly over the SSPD active area. The positioning accuracy of the ring was below 1 μm. The receiver with SSPDs was placed (immersed) in a standard liquid-helium transport Dewar and kept without interruption for over two months at 4.2 K. At the same time, the optical fiber inputs and electrical outputs were kept at room temperature. Our best system reached a system quantum efficiency of up to 0.3 % in the NIR radiation range, with the detector coupling efficiency of about 30 %. The response time was measured to be about 250 ps and was limited by our read-out electronics. The measured jitter was close to 35 ps. The presented performance parameters show that our NIR single photon detectors are suitable for practical quantum cryptography and for applications in quantum-correlation experiments.
	Address
	Corporate Author				Thesis
	Publisher	SPIE	Place of Publication		Editor	Rogalski, A.; Dereniak, E.L.; Sizov, F.F.
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	Infrared Photoelectronics
	Notes				Approved	no
	Call Number				Serial	1459
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	Author	Siemsen, K. J.; Bernard, J. E.; Madej, A. A.; Marmet, L.
	Title	Absolute frequency measurement of a CO₂/OsO₄ stabilized laser at 28.8 THz			Type	Journal Article
	Year	2001	Publication	Applied Physics B: Lasers and Optics	Abbreviated Journal	Appl. Phys. B: Lasers and Optics
	Volume	72	Issue		Pages	567-573
	Keywords	HgCdTe detector
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	462
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	Author	Shurakov, Alexander; Tong, Cheuk-yu E.; Blundell, Raymond; Gol’tsman, Gregory
	Title	A microwave pumped HEB direct detector using a homodyne readout scheme			Type	Abstract
	Year	2014	Publication	Proc. 25^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 25^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	129
	Keywords	waveguide NbN HEB detector, NEP
	Abstract	We report the results of our study on the noise performance of a fast THz detector based on the repurpose of hot electron bolometer mixer (HEB). Instead of operating with an elevated bath temperature, microwave power is injected into the HEB device, which enhances the sensitivity of the detector and at the same time provide a mechanism for reading out impedance changes of the device induced by the modulated incident THz radiation [1]. We have demonstrated an improvement of the detector’s optical noise equivalent power (NEP). Furthermore, by introducing a homodyne readout scheme based on a room temperature microwave mixer, the dynamic range of the detector is increased. The HEB devices used in this work were made of 4 nm thick NbN film. The detector chips were installed into a waveguide mixer block fitted with a corrugated horn, mounted on the cold plate of a liquid helium cryostat. The HEBs were operated at a bath temperature of 4.2 K. The signal beam was terminated on black bodies at ambient and liquid nitrogen temperatures. A chopper wheel placed in front of the cryostat window operating at a frequency of 1.48 kHz modulated the input load temperature of the detector. A cold mesh filter, centered at 830 GHz, was used to define the input signal power bandwidth. Microwave was injected through a broadband directional coupler inside the cryostat. Our experiments were mostly conducted at a pump frequency of 1.5 GHz. The reflected microwave power from the HEB device was fed into a cryogenic low noise amplifier (LNA). The output of the LNA was connected to the RF input port of a room temperature microwave mixer, which beat the reflected signal from the HEB using a copy of the original 1.5 GHz injection signal in a homodyne demodulation scheme. The amplitude of the detected power was measured by a lock-in amplifier, which was synchronized to the chopper frequency. Preliminary results yield an optical NEP of ~1 pW/ Hz 1/2 which corresponds to an improvement of a factor of 3 compared to [1], driven mainly by a lowering of the system noise floor. The dynamic range was also increased by similar amount. References 1. A. Shurakov et al. “A Microwave Pumped Hot Electron Bolometric Direct Detector,” submitted on Oct 18, 2013 to Appl. Phys. Let.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1365
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	Author	Shurakov, Alexander; Maslennikov, Sergey; Tong, Cheuk-yu E.; Gol’tsman, Gregory
	Title	Performance of an HEB direct detector utilizing a microwave reflection readout scheme			Type	Conference Article
	Year	2015	Publication	Proc. 26^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 26^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	36
	Keywords	HEB detector
	Abstract	We report the results of our study on the performance of a hot electron bolometric (HEB) direct detector, operated by a microwave pump. The HEB devices used in this work were made from NbN thin film deposited on high resistivity silicon with an in-situ fabrication process. The experimental setup employed is similar to the one described in [1]. The detector chips were glued to a silicon lens clamped to a copper holder mounted on the cold plate of a liquid helium cryostat. Thermal link between the lens and the holder was maintained by a thin indium shim. The HEBs were operated at a bath temperature of about 4.4 K. Conventional phonon pump, commonly realized by raising the bath temperature of the detector, was substituted by a microwave one. In this case, a CW microwave signal is injected to the device through a directional coupler connected directly to the detector holder. The power incident on the HEB device was typically 1-2 μW, and the pump frequency was in the range of 0.5-1.5 GHz. The signal sources were 2 black bodies held at temperatures of 295 K and 77 K. A chopper wheel placed in front of the cryostat window switched the input to the detector between the 2 sources. A modulation frequency of several kilohertz was chosen in order to reduce the effects of the HEB’s flicker noise. A cold mesh filter was used to define the input bandwidth of the detector. The reflected microwave signal from the HEB device was fed into a low noise amplifier, the output of which is connected to a room temperature Schottky microwave power detector. This Schottky detector, in conjunction with a lock-in amplifier, demodulated the input signal modulation from the copper wheel. As the input load was switched, the impedance of the HEB device at the microwave pump frequency also changed in response to the incident signal power variation. Therefore the reflected microwave power follows the incident signal modulation. The derived responsivity from this detection system nicely correlates with the HEB impedance. In order to provide a quantitative description of the impedance variation of the HEB device and the impact of a microwave pump, we have numerically solved the heat balance equations written for the NbN bridge and its surrounding thermal heat sink [2]. Our model also accounts for the impact of the operating frequency of the detector because of non-uniform absorption of low-frequency photons across the NbN bridge [3]. In our measurements we varied the signal source wavelength from 2 mm down to near infrared range, and hence we indirectly performed the impedance measurements at frequencies below, around and far beyond the superconducting gap. Preliminary results show good agreement between the experiment and theoretical prediction. Further measurements are still in progress. [1] A. Shurakov et al., “A Microwave Reflection Readout Scheme for Hot Electron Bolometric Direct Detector”, to appear in IEEE Trans. THz Sci. Tech., 2015. [2] S. Maslennikov, “RF heating efficiency of the terahertz superconducting hot-electron bolometer”, http://arxiv.org/pdf/1404.5276v5.pdf, 2014. [3] W. Miao et al., “Non-uniform absorption of terahertz radiation on superconducting hot electron bolometer microbridges”, Appl. Phys. Let., 104, 052605, 2014.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1158
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	Author	Shurakov, A.; Tong, Cheuk-yu E.; Grimes, P.; Blundell, R.; Golt'sman, G.
	Title	A microwave reflection readout scheme for hot electron bolometric direct detector			Type	Journal Article
	Year	2015	Publication	IEEE Trans. THz Sci. Technol.	Abbreviated Journal	IEEE Trans. THz Sci. Technol.
	Volume	5	Issue		Pages	81-84
	Keywords	HEB detectors
	Abstract	In this paper, we propose and present data from a fast THz detector based on the repurpose of hot electron bolometer mixers (HEB) fabricated from superconducting NbN thinfilm. This detector is essentially a traditional NbN bolometer element that operates under the influence of a microwave pump. The in-jected microwave power serves the dual purpose of enhancing the detector sensitivity and reading out the impedance changes of the device in response to incidentTHz radiation. We have measured an optical Noise Equivalent Power of 4 pW/ Hz for our detector at a bath temperature of 4.2 K. The measurement frequency was 0.83 THz and the modulation frequency was 1.48 kHz. The readout scheme is versatile and facilitates both high-speed operation as well as multi-pixel applications.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ atomics90 @			Serial	950
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	Author	Shurakov, A.; Prikhodko, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Voronov, B.; Goltsman, G.
	Title	Efficiency of a microwave reflectometry for readout of a THz multipixel Schottky diode direct detector			Type	Conference Article
	Year	2020	Publication	J. Phys.: Conf. Ser.	Abbreviated Journal	J. Phys.: Conf. Ser.
	Volume	1695	Issue		Pages	012156
	Keywords	Shottky diode, THz, direct detector, multipixel camera
	Abstract	In this paper we report on the results of investigation of efficiency of a microwave reflectometry for readout of a terahertz multipixel Schottky diode direct detector. Decent capabilities of the microwave reflectometry readout were earlier justified by us for a hot electron bolometric direct detector. In case of a planar Schottky diode, we observed increase of an optical noise equivalent power by a factor of 2 compared to that measured within a conventional readout scheme. For implementation of a multipixel camera, a microwave reflectometer is to be used to readout each row of the camera, and the row switching is to be maintained by a CMOS analog multiplexer. The diodes within a row have to be equipped with filters to distribute the probing microwave signal properly. The simultaneous use of analog multiplexing and microwave reflectometry enables to reduce the camera response time by a factor of its number of columns.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1742-6588	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1153
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	Author	Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I.
	Title	Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures			Type	Journal Article
	Year	2010	Publication	Bull. Russ. Acad. Sci. Phys.	Abbreviated Journal	Bull. Russ. Acad. Sci. Phys.
	Volume	74	Issue	1	Pages	100-102
	Keywords	2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth
	Abstract	The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering.
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	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
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	Series Volume		Series Issue		Edition
	ISSN	1062-8738	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1217
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