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Author ![sorted by Author field, descending order (down)](img/sort_desc.gif) |
Title |
Year |
Publication |
Volume |
Pages |
Links |
|
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts |
1999 |
Semicond. |
33 |
551-554 |
|
|
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S. |
Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K |
1996 |
JETP Lett. |
64 |
404-409 |
|
|
Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N. |
The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer |
2003 |
J. of communications technol. & electronics |
48 |
671-675 |
|
|
Vachtomin, Y. B.; Antipov, S. V.; Maslennikov, S. N.; Smirnov, K. V.; Polyakov, S. L.; Zhang, W.; Svechnikov, S. I.; Kaurova, N. S.; Grishina, E. V.; Voronov, B. M.; Gol’tsman, G. N. |
Quasioptical hot electron bolometer mixers based on thin NBN films for terahertz region |
2006 |
Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
2 |
688-689 |
|
|
Tuchak, A. N.; Gol’tsman, G. N.; Kitaeva, G. K.; Penin, A. N.; Seliverstov, S. V.; Finkel, M. I.; Shepelev, A. V.; Yakunin, P. V. |
Generation of nanosecond terahertz pulses by the optical rectification method |
2012 |
JETP Lett. |
96 |
94-97 |
|
|
Trifonov, V. A.; Karasik, B. S.; Zorin, M. A.; Gol’tsman, G. N.; Gershenzon, E. M.; Lindgren, M.; Danerud, M.; Winkler, D. |
9.6 μm wavelength mixing in a patterned YBa2Cu3O7‐δ thin film |
1996 |
Appl. Phys. Lett. |
68 |
1418-1420 |
|
|
Tret’yakov, I. V.; Ryabchun, S. A.; Kaurova, N. S.; Larionov, P. A.; Lobastova, A. A.; Voronov, B. M.; Finkel, M. I.; Gol’tsman, G. N. |
Optimum absorbed heterodyne power for superconducting NbN hot-electron bolometer mixer |
2010 |
Tech. Phys. Lett. |
36 |
1103-1105 |
|
|
Tikhonov, V. V.; Polyakova, O. N.; Gol’tsman, G. N.; Dzardanov, A. L.; Boyarskiy, D. A. |
Determination of dielectric properties of ore minerals in the microwave band |
2008 |
Radiophys. Quant. Electron. |
51 |
966-974 |
|
|
Svechnikov, S. I.; Finkel, M. I.; Maslennikov, S. N.; Vachtomin, Y. B.; Smirnov, K. V.; Seleznev, V. A.; Korotetskaya, Y. P.; Kaurova, N. S.; Voronov, B. M.; Gol’tsman, G. N. |
Superconducting hot electron bolometer mixer for middle IR range |
2006 |
Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
2 |
686-687 |
|
|
Sobolewski, R.; Verevkin, A.; Gol’tsman, G. N. |
Superconducting optical single-photon detectors |
2004 |
CLEO/QELS |
|
IThD1 |
|
|
Smirnov, K. V.; Vakhtomin, Yu. B.; Divochiy, A. V.; Ozhegov, R. V.; Pentin, I. V.; Slivinskaya, E. V.; Tarkhov, M. A.; Gol’tsman, G. N. |
Single-photon detectors for the visible and infrared parts of the spectrum based on NbN nanostructures |
2009 |
Proc. Progress In Electromagnetics Research Symp. |
|
863-864 |
|
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Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. |
Energy relaxation of two-dimensional electrons in the quantum Hall effect regime |
2000 |
JETP Lett. |
71 |
31-34 |
|
|
Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. |
Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons |
2010 |
Semicond. |
44 |
1427-1429 |
|
|
Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. |
Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures |
2010 |
Bull. Russ. Acad. Sci. Phys. |
74 |
100-102 |
|
|
Sergeev, A. V.; Semenov, A. D.; Kouminov, P.; Trifonov, V.; Goghidze, I. G.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E. M. |
Transparency of a YBa2Cu3O7-film/substrate interface for thermal phonons measured by means of voltage response to radiation |
1994 |
Phys. Rev. B Condens. Matter. |
49 |
9091-9096 |
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