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Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures 2010 Bull. Russ. Acad. Sci. Phys. 74 100-102 details   doi
Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Goltsman, G. N.; Verevkin, A. A.; Toropov, A. I.; Mauskopf, P. Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements 2011 Semicond. Sci. Technol. 26 025013 details   doi
Shaha, Jagdeep; Pinczukb, A.; Gossardb, A. C.; Wiegmannb, W. Hot carrier energy loss rates in GaAs quantum wells: large differences between electrons and holes 1985 Phys. B+C 134 174-178 details   openurl
Shah, Nayana; Pekker, David; Goldbart, Paul M. Inherent stochasticity of superconductor-resistor switching behavior in nanowires 2008 Phys. Rev. Lett. 101 207001(1 to 4) details   doi
Shah, Jagdeep; Pinczuk, A.; Gossard, A. C.; Wiegmann, W. Energy-loss rates for hot electrons and holes in GaAs quantum wells 1985 Phys. Rev. Lett. 54 2045-2048 details   openurl
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