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Author | Ferrari, S.; Kovalyuk, V.; Vetter, A.; Lee, C.; Rockstuhl, C.; Semenov, A.; Gol'tsman, G.; Pernice, W. | ||||
Title | Analysis of the detection response of waveguide-integrated superconducting nanowire single-photon detectors at high count rate | Type | Journal Article | ||
Year | 2019 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
Volume | 115 | Issue | 10 | Pages | 101104 |
Keywords | SSPD, SNSPD, waveguide | ||||
Abstract | Nanophotonic circuitry and superconducting nanowires have been successfully combined for detecting single photons, propagating in an integrated photonic circuit, with high efficiency and low noise and timing uncertainty. Waveguide-integrated superconducting nanowire single-photon detectors (SNSPDs) can nowadays be engineered to achieve subnanosecond recovery times and can potentially be adopted for applications requiring Gcps count rates. However, particular attention shall be paid to such an extreme count rate regime since artifacts in the detector functionality emerge. In particular, a count-rate dependent detection efficiency has been encountered that can compromise the accuracy of quantum detector tomography experiments. Here, we investigate the response of waveguide-integrated SNSPDs at high photon flux and identify the presence of parasitic currents due to the accumulation of charge in the readout electronics to cause the above-mentioned artifact in the detection efficiency. Our approach allows us to determine the maximum photon count rate at which the detector can be operated without adverse effects. Our findings are particularly important to avoid artifacts when applying SNSPDs for quantum tomography. We acknowledge support through ERC Consolidator Grant No. 724707 and from the Deutsche Forschungsgemeinschaft through Project No. PE 1832/5-1,2, as well as funding by the Volkswagen Foundation. This project has received funding from the European Union's Horizon 2020 research and innovation program under the Marie Skłodowska-Curie Grant Agreement No. 675745. V.K. and G.G. acknowledge support from the Russian Science Foundation Project No. 16-12-00045 (NbN film deposition and testing). A.V. acknowledges support from the Karlsruhe School of Optics and Photonics (KSOP). |
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ISSN | 0003-6951 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 1185 | |||
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Author | Ferrari, S.; Kahl, O.; Kovalyuk, V.; Goltsman, G. N.; Korneev, A.; Pernice, W. H. P. | ||||
Title | Waveguide-integrated single- and multi-photon detection at telecom wavelengths using superconducting nanowires | Type | Journal Article | ||
Year | 2015 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
Volume | 106 | Issue | 15 | Pages | 151101 (1 to 5) |
Keywords | SSPD, SNSPD | ||||
Abstract | We investigate single- and multi-photon detection regimes of superconducting nanowire detectors embedded in silicon nitride nanophotonic circuits. At near-infrared wavelengths, simultaneous detection of up to three photons is observed for 120 nm wide nanowires biased far from the critical current, while narrow nanowires below 100 nm provide efficient single photon detection. A theoretical model is proposed to determine the different detection regimes and to calculate the corresponding internal quantum efficiency. The predicted saturation of the internal quantum efficiency in the single photon regime agrees well with plateau behavior observed at high bias currents. W. H. P. Pernice acknowledges support by the DFG Grant Nos. PE 1832/1-1 and PE 1832/1-2 and the Helmholtz society through Grant No. HIRG-0005. The Ph.D. education of O. Kahl is embedded in the Karlsruhe School of Optics and Photonics (KSOP). G. N. Goltsman acknowledges support by Russian Federation President Grant HШ-1918.2014.2 and Ministry of Education and Science of the Russian Federation Contract No.: RFMEFI58614X0007. A. Korneev acknowledges support by Statement Task No. 3.1846.2014/k. V. Kovalyuk acknowledges support by Statement Task No. 2327. We also acknowledge support by the Deutsche Forschungsgemeinschaft (DFG) and the State of Baden-Württemberg through the DFG-Center for Functional Nanostructures (CFN) within subproject A6.4. We thank S. Kühn and S. Diewald for the help with device fabrication as well as B. Voronov and A. Shishkin for help with NbN thin film deposition and A. Semenov for helpful discussion about the detection mechanism of nanowire SSPD's. The authors declare no competing financial interests. |
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ISSN | 0003-6951 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 1211 | |||
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Author | Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Charayev, I.; Voronov, B.M.; Finkel, M.; Klapwijk, T.M.; Morozov, S.; Presniakov, M.; Bobrinetskiy, I.; Ibragimov, R.; Goltsman, G. | ||||
Title | Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation | Type | Journal Article | ||
Year | 2013 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
Volume | 103 | Issue | 18 | Pages | 181121 (1 to 5) |
Keywords | carbon nanotubes, CNT, THz radiation, SiO2 substrate | ||||
Abstract | We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. Authors thank Professor P. Barbara for providing the catalyst for CNT growth and Dr. N. Chumakov and V. Rylkov for stimulating discussions. The work was supported by the RFBR (Grant No. 12-02-01291-a) and by the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007). G.F. acknowledges support of the RFBR grant 12-02-01005-a. | ||||
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Call Number | Serial | 1171 | |||
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Author | Elvira, D.; Michon, A.; Fain, B.; Patriarche, G.; Beaudoin, G.; Robert-Philip, I.; Vachtomin, Y.; Divochiy, A. V.; Smirnov, K. V.; Gol’tsman, G. N.; Sagnes, I.; Beveratos, A. | ||||
Title | Time-resolved spectroscopy of InAsP/InP(001) quantum dots emitting near 2 μm | Type | Journal Article | ||
Year | 2010 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
Volume | 97 | Issue | 13 | Pages | 131907 (1 to 3) |
Keywords | SSPD, SNSPD, InAsP/InP quantum dots | ||||
Abstract | By using superconducting single photon detectors, we perform time-resolved characterization of a small ensemble of InAsP/InP quantum dots grown by metal organic vapor phase epitaxy, emitting at wavelengths between 1.6 and 2.2 μm. We demonstrate that alloying phosphorus with InAs allows to shift the emission wavelength toward higher wavelengths, while keeping the high optical quality of these quantum dots at room temperature, with no decrease in their radiative lifetime. This work was partially supported by Russian Ministry of Science and Education: Federal State Program “Scientific and Educational Cadres of Innovative” state Contract Nos. 02.740.0228, 14.740.11.0343, 14.740.11.0269, and P931, and RFBR Project No. 09-02-12364. | ||||
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ISSN | 0003-6951 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 1238 | |||
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Author | Ekstörm, H.; Kollberg, E.; Yagoubov, P.; Gol'tsman, G.; Gershenzon, E.; Yngvesson, S. | ||||
Title | Gain and noise bandwidth of NbN hot-electron bolometric mixers | Type | Journal Article | ||
Year | 1997 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
Volume | 70 | Issue | 24 | Pages | 3296-3298 |
Keywords | NbN HEB mixers, conversion loss, conversion gain, U-factor technique | ||||
Abstract | We have measured the noise performance and gain bandwidth of 35 Å thin NbN hot-electron mixers integrated with spiral antennas on silicon substrate lenses at 620 GHz. The best double-sideband receiver noise temperature is less than 1300 K with a 3 dB bandwidth of ≈5 GHz. The gain bandwidth is 3.2 GHz. The mixer output noise dominated by thermal fluctuations is 50 K, and the intrinsic conversion gain is about −12 dB. Without mismatch losses and excluding the loss from the beamsplitter, we expect to achieve a receiver noise temperature of less than 700 K. | ||||
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Call Number | Serial | 279 | |||
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Author | Ejrnaes, M.; Cristiano, R.; Quaranta, O.; Pagano, S.; Gaggero, A.; Mattioli, F.; Leoni, R.; Voronov, B.; Gol’tsman, G. | ||||
Title | A cascade switching superconducting single photon detector | Type | Journal Article | ||
Year | 2007 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
Volume | 91 | Issue | 26 | Pages | 262509 (1 to 3) |
Keywords | SSPD, SNSPD, parallel-wire | ||||
Abstract | We have realized superconducting single photon detectors with reduced inductance and increased signal pulse amplitude. The detectors are based on a parallel connection of ultrathin NbN nanowires with a common bias inductance. When properly biased, an absorbed photon induces a cascade switch of all the parallel wires generating a signal pulse amplitude of 2mV. The parallel wire configuration lowers the detector inductance and reduces the response time well below 1ns. This work was performed in the framework of the EU project “SINPHONIA” NMP4-CT-2005-016433. |
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ISSN | 0003-6951 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 1418 | |||
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Author | Dorenbos, S. N.; Reiger, E. M.; Perinetti, U.; Zwiller, V.; Zijlstra, T.; Klapwijk, T. M. | ||||
Title | Low noise superconducting single photon detectors on silicon | Type | Journal Article | ||
Year | 2008 | Publication | Applied Physics Letters | Abbreviated Journal | Appl. Phys. Lett. |
Volume | 93 | Issue | 13 | Pages | 131101 |
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Call Number | RPLAB @ s @ | Serial | 436 | ||
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Author | Delacour, C.; Claudon, J.; Poizat, J.-Ph.; Pannetier, B.; Bouchiat, V.; de Lamaestre, R. Espiau; Villegier, J.-C.; Tarkhov, M.; Korneev, A.; Voronov, B.; Gol'tsman, G. | ||||
Title | Superconducting single photon detectors made by local oxidation with an atomic force microscope | Type | Journal Article | ||
Year | 2007 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
Volume | 90 | Issue | 19 | Pages | 191116 (1 t0 3) |
Keywords | SSPD | ||||
Abstract | The authors present a fabrication technique of superconducting single photon detectors made by local oxidation of niobium nitride ultrathin films. Narrow superconducting meander lines are obtained by direct writing of insulating niobium oxynitride lines through the films using voltage-biased tip of an atomic force microscope. Due to the 30nm resolution of the lithographic technique, the filling factor of the meander line can be made substantially higher than detector of similar geometry made by electron beam lithography, thus leading to increased quantum efficiency. Single photon detection regime of these devices is demonstrated at 4.2K. The authors thank J.-P. Maneval for stimulating discussions. This work has been partly supported by ACI Nanoscience from French Ministry of Research, D.G.A., by Grant No. 02.445.11.7434 of Russian Ministry of Education and Science, and by the European Commission under project “SINPHONIA,” Contract No. NMP4-CT-2005-16433. |
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ISSN | 0003-6951 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 423 | |||
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Author | Cao, Q.; Yoon, S. F.; Tong, C. Z.; Ngo, C. Y.; Liu, C. Y.; Wang, R.; Zhao, H. X. | ||||
Title | Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers | Type | Journal Article | ||
Year | 2009 | Publication | Applied Physics Letters | Abbreviated Journal | Appl. Phys. Lett. |
Volume | 95 | Issue | 19 | Pages | 3 |
Keywords | 2DEG | ||||
Abstract | The competition of ground state (GS) and excited state (ES) is investigated from the as-grown and thermally annealed 1.3 μm ten-layer p-doped InAs/GaAs quantum dot (QD) lasers. The modal gain competition between GS and ES are measured and analyzed around the ES threshold characteristics. Our results show that two-state competition is more significant in devices with short cavity length operating at high temperature. By comparing the as-grown and annealed devices, we demonstrate enhanced GS and suppressed ES lasing from the QD laser annealed at 600 °C for 15 s. | ||||
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Call Number | RPLAB @ gujma @ | Serial | 673 | ||
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Author | Burke, P. J.; Schoelkopf, R. J.; Prober, D. E.; Skalare, A.; Karasik, B. S.; Gaidis, M. C.; McGrath, W. R.; Bumble, B.; Leduc, H. G. | ||||
Title | Spectrum of thermal fluctuation noise in diffusion and phonon cooled hot-electron mixers | Type | Journal Article | ||
Year | 1998 | Publication | Applied Physics Letters | Abbreviated Journal | Appl. Phys. Lett. |
Volume | 72 | Issue | 12 | Pages | 1516-1518 |
Keywords | HEB mixer; thermal fluctuation noise; TFN | ||||
Abstract | A systematic study of the intermediate frequency noise bandwidth of Nb thin-film superconducting hot-electron bolometers is presented. We have measured the spectrum of the output noise as well as the conversion efficiency over a very broad intermediate frequency range (from 0.1 to 7.5 GHz) for devices varying in length from 0.08 μm to 3 μm. Local oscillator and rf signals from 8 to 40 GHz were used. For a device of a given length, the spectrum of the output noise and the conversion efficiency behave similarly for intermediate frequencies less than the gain bandwidth, in accordance with a simple thermal model for both the mixing and thermal fluctuation noise. For higher intermediate frequencies the conversion efficiency decreases; in contrast, the noise decreases but has a second contribution which dominates at higher frequency. The noise bandwidth is larger than the gain bandwidth, and the mixer noise is low, between 120 and 530 K (double side band). | ||||
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Call Number | RPLAB @ gujma @ | Serial | 760 | ||
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Author | Bennett, Douglas A.; Schmidt, Daniel R.; Swetz, Daniel S.; Ullom, Joel N. | ||||
Title | Phase-slip lines as a resistance mechanism in transition-edge sensors | Type | Journal Article | ||
Year | 2014 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
Volume | 104 | Issue | Pages | 042602 | |
Keywords | microbolometers, TES, phase-slip lines, PSL | ||||
Abstract | The fundamental mechanism of resistance in voltage-biased superconducting films is poorly understood despite its importance as the basis of transition-edge sensors (TESs). TESs are utilized in state-of-the-art microbolometers and microcalorimeters covering a wide range of energies and applications. We present a model for the resistance of a TES based on phase-slip lines (PSLs) and compare the model to data. One of the model's predictions, discrete changes in the number of PSLs, is a possible explanation for the observed switching between discrete current states in localized regions of bias. | ||||
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Notes | Recommended by Klapwijk | Approved | no | ||
Call Number | Serial | 929 | |||
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Author | Baselmans, J. J. A.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol'tsman, G. | ||||
Title | Doubling of sensitivity and bandwidth in phonon cooled hot electron bolometer mixers | Type | Journal Article | ||
Year | 2004 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
Volume | 84 | Issue | 11 | Pages | 1958-1960 |
Keywords | NbN HEB mixers | ||||
Abstract | We demonstrate that the performance of NbN lattice cooled hot electron bolometer mixers depends strongly on the interface quality between the bolometer and the contact structure. We show experimentally that both the receiver noise temperature and the gain bandwidth can be improved by more than a factor of 2 by cleaning the interface and adding an additional superconducting interlayer to the contact pad. Using this we obtain a double sideband receiver noise temperature TN,DSB=950 K at 2.5 THz and 4.3 K, uncorrected for losses in the optics. At the same bias point, we obtain an IF gain bandwidth of 6 GHz. |
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Call Number | Serial | 352 | |||
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Author | Baselmans, J. J. A.; Baryshev, A.; Reker, S. F.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; Vahtomin, Yu.; Maslennikov, S.; Antipov, S.; Voronov, B.; Gol'tsman, G. | ||||
Title | Direct detection effect in small volume hot electron bolometer mixers | Type | Journal Article | ||
Year | 2005 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
Volume | 86 | Issue | 16 | Pages | 163503 (1 to 3) |
Keywords | HEB, mixer, direct detection effect | ||||
Abstract | We measure the direct detection effect in a small volume (0.15μm×1μm×3.5nm)(0.15μm×1μm×3.5nm) quasioptical NbN phonon cooled hot electronbolometermixer at 1.6THz1.6THz. We find that the small signal sensitivity of the receiver is underestimated by 35% due to the direct detection effect and that the optimal operating point is shifted to higher bias voltages when using calibration loads of 300K300K and 77K77K. Using a 200GHz200GHzbandpass filter at 4.2K4.2K the direct detection effect virtually disappears. This has important implications for the calibration procedure of these receivers in real telescope systems. | ||||
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Call Number | Serial | 377 | |||
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Author | Barends, R.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M. | ||||
Title | Current-induced vortex unbinding in bolometer mixers | Type | Journal Article | ||
Year | 2005 | Publication | Applied Physics Letters | Abbreviated Journal | Appl. Phys. Lett. |
Volume | 87 | Issue | Pages | 263506 (1 to 3) | |
Keywords | HEB mixer numerical model, HEB model, IV-curves, vortex-antivortex, Berezinskii–Kosterlitz–Thouless theory, diffusion cooling channel, diffusion channel, distributed HEB model, distributed model, self-heating effect, temperature profile | ||||
Abstract | We present a description of the current-voltage characteristics of hot electron bolometers in terms of the current-dependent intrinsic resistive transition of NbN films. We find that, by including this current dependence, we can correctly predict the complete current-voltage characteristics, showing excellent agreement with measurements for both low and high bias and for small as well as large devices. It is assumed that the current dependence is due to vortex-antivortex unbinding as described in the Berezinskii–Kosterlitz–Thouless theory. The presented approach will be useful in guiding device optimization for noise and bandwidth. | ||||
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Call Number | Serial | 604 | |||
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Author | Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D. | ||||
Title | Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors | Type | Journal Article | ||
Year | 2018 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
Volume | 112 | Issue | 14 | Pages | 141101 (1 to 5) |
Keywords | graphene field effect transistors, FET | ||||
Abstract | Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs. D.A.B. acknowledges the Leverhulme Trust for financial support. The work of D.S. was supported by Grant No. 16-19-10557 of the Russian Scientific Foundation (theoretical model). G.F., I.G., M.M., and G.G. acknowledge the Russian Science Foundation [Grant No. 14-19-01308 (MIET, cryostat upgrade) and Grant No. 17-72-30036, (MSPU, photoresponse measurements), the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007 (device fabrication) and Task No. 3.7328.2017/LS (NEP analyses)] and the Russian Foundation for Basic Research [Grant No. 15-02-07841 (device design)]. The authors are grateful to Professor M. S. Shur for helpful discussions. |
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ISSN | 0003-6951 | ISBN | Medium | ||
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Notes | Approved | no | |||
Call Number | Serial | 1309 | |||
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