|
Records |
Links |
|
Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
|
|
Title |
Kinetics of electron and hole binding into excitons in germanium |
Type |
Journal Article |
|
Year |
1983 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
|
|
Volume |
57 |
Issue |
2 |
Pages |
369-376 |
|
|
Keywords |
Ge, electron and hole binding |
|
|
Abstract |
The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1711 |
|
Permanent link to this record |
|
|
|
|
Author |
Goltsman, G. N.; Maliavkin, A. V.; Ptitsina, N. G.; Selevko, A. G. |
|
|
Title |
Magnetic exciton spectroscopy in uniaxially compressed Ge at submillimeter waves |
Type |
Conference Article |
|
Year |
1986 |
Publication |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
Abbreviated Journal |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
|
|
Volume |
50 |
Issue |
|
Pages |
280-281 |
|
|
Keywords |
Ge, axial compression loads, excitons, germanium, magnetic spectroscopy, submillimeter waves, Zeeman effect |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
Russian |
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0367-6755 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
3rd Vsesoiuznyi Seminar po Opticheskomu Detektirovaniiu Magnitnykh Rezonansov v Tverdykh Telakh, Kiev, Ukrainian SSR, May 1985 |
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1708 |
|
Permanent link to this record |
|
|
|
|
Author |
Verevkin, A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.; Smirnov, K. S.; Sobolewski, R. |
|
|
Title |
Direct measurements of energy relaxation times in two-dimensional structures under quasi-equilibrium conditions |
Type |
Conference Article |
|
Year |
2002 |
Publication |
Mater. Sci. Forum |
Abbreviated Journal |
Mater. Sci. Forum |
|
|
Volume |
384-3 |
Issue |
|
Pages |
107-116 |
|
|
Keywords |
2DEG, AlGaAs/GaAs |
|
|
Abstract |
A new microwave technique was successfully applied for direct studies of energy relaxation times in two-dimensional AlGaAs/GaAs structures under quasi-equilibrium conditions in the nanosecond and picosecond time scale. We report our results of energy relaxation time measurements in the temperature range 1.6-50 K, in quantum Hall effect regime in magnetic fields up to 4 T. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
Materials Science Forum |
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1536 |
|
Permanent link to this record |
|
|
|
|
Author |
Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. |
|
|
Title |
Energy relaxation of two-dimensional electrons in the quantum Hall effect regime |
Type |
Journal Article |
|
Year |
2000 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
|
|
Volume |
71 |
Issue |
1 |
Pages |
31-34 |
|
|
Keywords |
2DEG, GaAs/AlGaAs heterostructures |
|
|
Abstract |
The mm-wave spectroscopy with high temporal resolution is used to measure the energy relaxation times τe of 2D electrons in GaAs/AlGaAs heterostructures in magnetic fields B=0–4 T under quasi-equilibrium conditions at T=4.2 K. With increasing B, a considerable increase in τe from 0.9 to 25 ns is observed. For high B and low values of the filling factor ν, the energy relaxation rate τ −1e oscillates. The depth of these oscillations and the positions of maxima depend on the filling factor ν. For ν>5, the relaxation rate τ −1e is maximum when the Fermi level lies in the region of the localized states between the Landau levels. For lower values of ν, the relaxation rate is maximum at half-integer values of τ −1e when the Fermi level is coincident with the Landau level. The characteristic features of the dependence τ −1e (B) are explained by different contributions of the intralevel and interlevel electron-phonon transitions to the process of the energy relaxation of 2D electrons. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0021-3640 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
http://jetpletters.ru/ps/899/article_13838.shtml (“Энергетическая релаксация двумерных электронов в области квантового эффекта Холла”) |
Approved |
no |
|
|
Call Number |
|
Serial |
1559 |
|
Permanent link to this record |
|
|
|
|
Author |
Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. |
|
|
Title |
Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts |
Type |
Journal Article |
|
Year |
1999 |
Publication |
Semicond. |
Abbreviated Journal |
Semicond. |
|
|
Volume |
33 |
Issue |
5 |
Pages |
551-554 |
|
|
Keywords |
2DEG, AlGaAs/GaAs heterostructures |
|
|
Abstract |
The conductivity of hybrid microstructures with superconducting contacts made of niobium nitride to a semiconductor with a two-dimensional electron gas in a AlGaAs/GaAs heterostructure has been investigated. Distinctive features of the behavior of the conductivity indicate the presence of multiple Andreev reflection at scattering centers in the normal region near the superconductor-semiconductor boundary. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1063-7826 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1571 |
|
Permanent link to this record |