| Records |
| Author |
Rasulova, G. K.; Pentin, I. V.; Goltsman, G. N. |
| Title |
Terahertz emission from a weakly-coupled GaAs/AlGaAs superlattice biased into three different modes of current self-oscillations |
Type |
Journal Article |
| Year |
2019 |
Publication |
AIP Advances |
Abbreviated Journal |
AIP Advances |
| Volume |
9 |
Issue |
10 |
Pages |
105220 |
| Keywords |
GaAs/AlGaAs superlattice, SL, NbN HEB |
| Abstract |
Radio-frequency modulated terahertz (THz) emission power from weakly-coupled GaAs/AlGaAs superlattice (SL) has been increased by parallel connection of several SL mesas. Each SL mesa is a self-oscillator with its own oscillation frequency and mode. In coupled non-identical SL mesas biased at different voltages within the hysteresis loop the chaotic, quasiperiodic and frequency-locked modes of self-oscillations of current arise. THz emission was detected when three connected in parallel SL mesas were biased into the frequency-locked and quasiperiodic modes of self-oscillations of current, while in the chaotic mode of those it falls to the noise level. |
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| ISSN |
2158-3226 |
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1274 |
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| Author |
Ren, Y.; Zhang, D. X.; Zhou, K. M.; Miao, W.; Zhang, W.; Shi, S. C.; Seleznev, V.; Pentin, I.; Vakhtomin, Y.; Smirnov, K. |
| Title |
10.6 μm heterodyne receiver based on a superconducting hot-electron bolometer mixer and a quantum cascade laser |
Type |
Journal Article |
| Year |
2019 |
Publication |
AIP Advances |
Abbreviated Journal |
AIP Advances |
| Volume |
9 |
Issue |
7 |
Pages |
075307 |
| Keywords |
NbN HEB mixers, QCL, IR |
| Abstract |
We report on the development of a heterodyne receiver at mid-infrared wavelength for high-resolution spectroscopy applications. The receiver employs a superconducting NbN hot electron bolometer as a mixer and a room temperature distributed feedback quantum cascade laser operating at 10.6 μm (28.2 THz) as a local oscillator. The stabilization of the heterodyne receiver has been achieved using a feedback loop controlling the output power of the laser. Improved Allan variance times as well as a double sideband receiver noise temperature of 5000 K and a noise bandwidth of 2.8 GHz of the receiver system are demonstrated.
The work is supported in part by the National Key R&D Program of China under Grant 2018YFA0404701, by the CAS program under Grant QYZDJ-SSW-SLH043 and GJJSTD20180003, by the National Natural Science Foundation of China (NSFC) under Grant 11773083, by the “Hundred Talents Program” of the “Pioneer Initiative”, and in part by the CAS Key Lab for Radio Astronomy. |
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2158-3226 |
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no |
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1293 |
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Korneeva, Y. P.; Vodolazov, D. Y.; Semenov, A. V.; Florya, I. N.; Simonov, N.; Baeva, E.; Korneev, A. A.; Goltsman, G. N.; Klapwijk, T. M. |
| Title |
Optical single-photon detection in micrometer-scale NbN bridges |
Type |
Journal Article |
| Year |
2018 |
Publication |
Phys. Rev. Applied |
Abbreviated Journal |
Phys. Rev. Applied |
| Volume |
9 |
Issue |
6 |
Pages |
064037 (1 to 13) |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
We demonstrate experimentally that single-photon detection can be achieved in micrometer-wide NbN bridges, with widths ranging from 0.53 to 5.15 μm and for photon wavelengths of 408 to 1550 nm. The microbridges are biased with a dc current close to the experimental critical current, which is estimated to be about 50% of the theoretically expected depairing current. These results offer an alternative to the standard superconducting single-photon detectors, based on nanometer-scale nanowires implemented in a long meandering structure. The results are consistent with improved theoretical modeling based on the theory of nonequilibrium superconductivity, including the vortex-assisted mechanism of initial dissipation. |
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| ISSN |
2331-7019 |
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no |
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1303 |
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| Author |
Tretyakov, I. V.; Anfertyev, V. A.; Revin, L. S.; Kaurova, N. S.; Voronov, B. M.; Vaks, V. L.; Goltsman, G. N. |
| Title |
Sensitivity and resolution of a heterodyne receiver based on the NbN HEB mixer with a quantum-cascade laser as a local oscillator |
Type |
Journal Article |
| Year |
2018 |
Publication |
Radiophys. Quant. Electron. |
Abbreviated Journal |
Radiophys. Quant. Electron. |
| Volume |
60 |
Issue |
12 |
Pages |
988-992 |
| Keywords |
NbN HEB mixer |
| Abstract |
We present the results of experimental studies of the basic characteristics and operation features of a terahertz heterodyne detector based on the superconducting NbN HEB mixer and a quantum cascade laser as a local oscillator operating at a frequency of 2.02 THz. The measured noise temperature of such a mixer amounted to 1500 K. The spectral resolution of the detector is determined by the width of the local-oscillator spectral line whose measured value does not exceed 1 MHz. The quantum-cascade laser could be linearly tuned with respect to frequency with the coefficient 7.2 MHz/mA within the limits of the current oscillation bandwidth. |
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0033-8443 |
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no |
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1307 |
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| Author |
Tretyakov, Ivan; Kaurova, N.; Voronov, B. M.; Goltsman, G. N. |
| Title |
About effect of the temperature operating conditions on the noise temperature and noise bandwidth of the terahertz range NbN hot-electron bolometers |
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Abstract |
| Year |
2018 |
Publication |
Proc. 29th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 29th Int. Symp. Space Terahertz Technol. |
| Volume |
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Issue |
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Pages |
113 |
| Keywords |
NbN HEB mixer |
| Abstract |
Results of an experimental study of the noise temperature (Tn) and noise bandwidth (NBW) of the superconductor NbN hot-electron bolometer (HEB) mixer as a function of its temperature (Tb) and NbN bridge length are presented. It was determined that the NBW of the mixer is significantly wider at temperatures close to the critical ones (Tc) than are values measured at 4.2 K. The NBW of the mixer measured at the heterodyne frequency of 2.5 THz at temperature Tb close to Tc was ~13 GHz, as compared with 6 GHz at Tb = 4.2 K. This experiment clearly demonstrates the limitation of the thermal flow from the NbN bridge at Tb ≪ Tc for mixers manufactured by the in situ technique. This limitation is close in its nature to the Andreev reflection on the superconductor/metal boundary. In this case, the noise temperature of the studied mixer increased from 1100 to 3800 K. |
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no |
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1313 |
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| Author |
Tretyakov, I.; Kaurova, N.; Raybchun, S.; Goltsman, G. N.; Silaev, A. A. |
| Title |
Technology for NbN HEB based multipixel matrix of THz range |
Type |
Conference Article |
| Year |
2018 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
| Volume |
195 |
Issue |
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Pages |
05011 |
| Keywords |
NbN HEB |
| Abstract |
The influence of homogeneity disorder degree of the thin superconducting NbN film across of Si wafer on characteristics of the Hot Electron Bolometers (HEB) has been investigated. Our experiments have been carried out near the superconducting transition and far below it. The high homogeneity disorder degree of the NbN film has been achieved by preparing the Si substrate surface. The fabricated HEBs all have almost identical R (T) characteristics with a dispersion of Tc and the normal resistance R300 of not more than 0.15K and 2 Ω, respectively. The quality of the devises allows us to demonstrate clearly the influence of non-equilibrium processes in the S’SS’ system on the device performance. Our fabrication technology also allows creating multiplex heterodyne and direct detector matrices based the HEB devices. |
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2100-014X |
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no |
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1318 |
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Seliverstov, S. V.; Anfertyev, V. A.; Tretyakov, I. V.; Ozheredov, I. A.; Solyankin, P. M.; Revin, L. S.; Vaks, V. L.; Rusova, A. A.; Goltsman, G. N.; Shkurinov, A. P. |
| Title |
Terahertz heterodyne receiver with an electron-heating mixer and a heterodyne based on the quantum-cascade laser |
Type |
Journal Article |
| Year |
2017 |
Publication |
Radiophys. Quant. Electron. |
Abbreviated Journal |
Radiophys. Quant. Electron. |
| Volume |
60 |
Issue |
7 |
Pages |
518-524 |
| Keywords |
NbN HEB mixer, QCL |
| Abstract |
We study characteristics of the laboratory prototype of a terahertz heterodyne receiver with an electron-heating mixer and a heterodyne based on the quantum-cascade laser. The results obtained demonstrate the possibility to use this receiver as a basis for creation of a high-sensitivity terahertz spectrometer, which can be used in many basic and practical applications. A significant advantage of this receiver will be the possibility of placing the mixer and heterodyne in the same cryostat, which will reduce the device dimensions considerably. The obtained experimental results are analyzed, and methods of optimizing the parameters of the receiver are proposed. |
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0033-8443 |
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no |
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1322 |
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Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. |
| Title |
Development of a silicon membrane-based multipixel hot electron bolometer receiver |
Type |
Journal Article |
| Year |
2017 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
27 |
Issue |
4 |
Pages |
1-5 |
| Keywords |
Multi-pixel, NbN HEB, silicon-on-insulator, horn array |
| Abstract |
We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array. |
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1051-8223 |
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no |
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1324 |
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Anfertev, V.; Vaks, V.; Revin, L.; Pentin, I.; Tretyakov, I.; Goltsman, G.; Vinogradov, E. A.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. |
| Title |
High resolution THz gas spectrometer based on semiconductor and superconductor devices |
Type |
Conference Article |
| Year |
2017 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
| Volume |
132 |
Issue |
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Pages |
02001 (1 to 2) |
| Keywords |
NbN HEB mixers, detectors, THz spectroscopy |
| Abstract |
The high resolution THz gas spectrometer consists of a synthesizer based on Gunn generator with a semiconductor superlattice frequency multiplier as a radiation source, and an NbN hot electron bolometer in a direct detection mode as a THz radiation receiver was presented. The possibility of application of a quantum cascade laser as a local oscillator for a heterodyne receiver which is based on an NbN hot electron bolometer mixer is shown. The ways for further developing of the THz spectroscopy were outlined. |
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2100-014X |
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no |
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1328 |
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Krause, S.; Mityashkin, V.; Antipov, S.; Gol’tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudziński, M. |
| Title |
Reduction of phonon escape time for nbn hot electron bolometers by using gan buffer layers |
Type |
Journal Article |
| Year |
2017 |
Publication |
IEEE Trans. Terahertz Sci. Technol. |
Abbreviated Journal |
IEEE Trans. Terahertz Sci. Technol. |
| Volume |
7 |
Issue |
1 |
Pages |
53-59 |
| Keywords |
NbN HEB mixer |
| Abstract |
In this paper, we investigated the influence of the GaN buffer layer on the phonon escape time of phonon-cooled hot electron bolometers (HEBs) based on NbN material and compared our findings to conventionally employed Si substrate. The presented experimental setup and operation of the HEB close to the critical temperature of the NbN film allowed for the extraction of phonon escape time in a simplified manner. Two independent experiments were performed at GARD/Chalmers and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. By fitting the normalized IF measurement data to the heat balance equations, the escape time as a fitting parameter has been deduced and amounts to 45 ps for the HEB based on Si substrate as in contrast to a significantly reduced escape time of 18 ps for the HEB utilizing the GaN buffer layer under the assumption that no additional electron diffusion has taken place. This study indicates a high phonon transmissivity of the NbN-to-GaN interface and a prospective increase of IF bandwidth for HEB made of NbN on GaN buffer layers, which is desirable for future THz HEB heterodyne receivers. |
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Edition |
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2156-3446 |
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no |
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1330 |
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