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Tretyakov, I. V.; Finkel, M. I.; Ryabchun, S. A.; Kardakova, A. I.; Seliverstov, S. V.; Petrenko, D. V.; Goltsman, G. N. |
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Title |
Hot-electron bolometer mixers with in situ contacts |
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Journal Article |
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Year |
2014 |
Publication |
Radiophys. Quant. Electron. |
Abbreviated Journal |
Radiophys. Quant. Electron. |
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Volume |
56 |
Issue |
8-9 |
Pages |
591-598 |
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Keywords |
HEB mixers |
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Abstract |
We report on the latest achievements in the development of superconducting hot-electron bolometer (HEB) mixers for terahertz superheterodyne receivers. We consider application ranges of such receivers and requirements for the basic characteristics of the mixers. Main features of the mixers, such as noise temperature, gain bandwidth, noise bandwidth, and required local-oscillator power, have been improved significantly over the past few years due to intense research work, both in terms of the element fabrication quality and in terms of understanding of the physics of the processes occurring in the HEB mixers. Contacts between the superconducting bridge and the planar antenna play a key role in the mixer operation. Improvement of the quality of the contacts leads simultaneously to a decrease in the noise temperature and an increase in the gain bandwidth of a mixer. |
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0033-8443 |
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1170 |
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Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Charayev, I.; Voronov, B.M.; Finkel, M.; Klapwijk, T.M.; Morozov, S.; Presniakov, M.; Bobrinetskiy, I.; Ibragimov, R.; Goltsman, G. |
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Title |
Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation |
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Journal Article |
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Year |
2013 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
103 |
Issue |
18 |
Pages |
181121 (1 to 5) |
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Keywords |
carbon nanotubes, CNT, THz radiation, SiO2 substrate |
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Abstract |
We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. Authors thank Professor P. Barbara for providing the catalyst for CNT growth and Dr. N. Chumakov and V. Rylkov for stimulating discussions. The work was supported by the RFBR (Grant No. 12-02-01291-a) and by the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007). G.F. acknowledges support of the RFBR grant 12-02-01005-a. |
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0003-6951 |
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1171 |
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Elezov, M. S.; Semenov, A. V.; An, P. P.; Tarkhov, M. A.; Goltsman, G. N.; Kardakova, A. I.; Kazakov, A. Y. |
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Title |
Investigating the detection regimes of a superconducting single-photon detector |
Type |
Journal Article |
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Year |
2013 |
Publication |
J. Opt. Technol. |
Abbreviated Journal |
J. Opt. Technol. |
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Volume |
80 |
Issue |
7 |
Pages |
435 |
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Keywords |
SSPD, quantum efficiency |
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Abstract |
The detection regimes of a superconducting single-photon detector have been investigated. A technique is proposed for determining the regions in which “pure regimes” predominate. Based on experimental data, the dependences of the internal quantum efficiency on the bias current are determined in the one-, two-, and three-photon detection regimes. |
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1070-9762 |
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1172 |
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Zvagelsky, R. D.; Chubich, D. A.; Kolymagin, D. A.; Korostylev, E. V.; Kovalyuk, V. V.; Prokhodtsov, A. I.; Tarasov, A. V.; Goltsman, G. N.; Vitukhnovsky, A. G. |
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Title |
Three-dimensional polymer wire bonds on a chip: morphology and functionality |
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Journal Article |
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Year |
2020 |
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J. Phys. D: Appl. Phys. |
Abbreviated Journal |
J. Phys. D: Appl. Phys. |
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Volume |
53 |
Issue |
35 |
Pages |
355102 |
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photonic wire bonds, PWB |
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Modern microchip-scale transceivers are capable of transmitting data at rates of the order of several terabits per second. In this regard, there is an urgent need to improve the interfaces connecting the chips and extend the bandpass of the interconnections. We use an approach combining silicon nitride nanophotonic circuits with 3D polymer waveguides fabricated by direct laser writing, which can be used as photonic interconnections or photonic wire bonds (PWB). These structures are designed, simulated, fabricated, and optimized for better light transmission at the telecommunication wavelength. An important part of this work is the study of the telecom signal transmission in a 3D polymer waveguide connecting two silicon nitride facing tapers. Two cases are considered: the tapers are one opposite the other or misaligned. Initially, the PWB shape was chosen to be Gaussian and then optimized: the top was circle-shaped and with the lower part still being Gaussian. Transmission losses were measured for both types of waveguides with different shapes. The idea of an optical multi-level crossing for photonic integrated circuits is also suggested as a solution to the problem of interconnections within a single chip. |
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0022-3727 |
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1181 |
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Ferrari, S.; Kovalyuk, V.; Vetter, A.; Lee, C.; Rockstuhl, C.; Semenov, A.; Gol'tsman, G.; Pernice, W. |
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Title |
Analysis of the detection response of waveguide-integrated superconducting nanowire single-photon detectors at high count rate |
Type |
Journal Article |
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Year |
2019 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
115 |
Issue |
10 |
Pages |
101104 |
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Keywords |
SSPD, SNSPD, waveguide |
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Nanophotonic circuitry and superconducting nanowires have been successfully combined for detecting single photons, propagating in an integrated photonic circuit, with high efficiency and low noise and timing uncertainty. Waveguide-integrated superconducting nanowire single-photon detectors (SNSPDs) can nowadays be engineered to achieve subnanosecond recovery times and can potentially be adopted for applications requiring Gcps count rates. However, particular attention shall be paid to such an extreme count rate regime since artifacts in the detector functionality emerge. In particular, a count-rate dependent detection efficiency has been encountered that can compromise the accuracy of quantum detector tomography experiments. Here, we investigate the response of waveguide-integrated SNSPDs at high photon flux and identify the presence of parasitic currents due to the accumulation of charge in the readout electronics to cause the above-mentioned artifact in the detection efficiency. Our approach allows us to determine the maximum photon count rate at which the detector can be operated without adverse effects. Our findings are particularly important to avoid artifacts when applying SNSPDs for quantum tomography.
We acknowledge support through ERC Consolidator Grant No. 724707 and from the Deutsche Forschungsgemeinschaft through Project No. PE 1832/5-1,2, as well as funding by the Volkswagen Foundation. This project has received funding from the European Union's Horizon 2020 research and innovation program under the Marie Skłodowska-Curie Grant Agreement No. 675745. V.K. and G.G. acknowledge support from the Russian Science Foundation Project No. 16-12-00045 (NbN film deposition and testing). A.V. acknowledges support from the Karlsruhe School of Optics and Photonics (KSOP). |
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0003-6951 |
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1185 |
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Polyakova, M.; Semenov, A. V.; Kovalyuk, V.; Ferrari, S.; Pernice, W. H. P.; Gol'tsman, G. N. |
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Title |
Protocol of measuring hot-spot correlation length for SNSPDs with near-unity detection efficiency |
Type |
Journal Article |
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Year |
2019 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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Volume |
29 |
Issue |
5 |
Pages |
1-5 |
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Keywords |
SSPD, waveguide-integrated SNSPD, hot-spot interaction length |
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We present a simple quantum detector tomography protocol, which allows, without ambiguities, to measure the two-spot detection efficiency and extract the hot-spot interaction length of superconducting nanowire single photon detectors (SNSPDs) with unity intrinsic detection efficiency. We identify a significant parasitic contribution to the measured two-spot efficiency, related to an effect of the bias circuit, and find a way to rule out this contribution during data post-processing and directly in the experiment. From the data analysis for waveguide-integrated SNSPD, we find signatures of the saturation of the two-spot efficiency and hot-spot interaction length of order of 100 nm. |
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1051-8223 |
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1187 |
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Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. |
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Title |
Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons |
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Journal Article |
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Year |
2010 |
Publication |
Semicond. |
Abbreviated Journal |
Semicond. |
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Volume |
44 |
Issue |
11 |
Pages |
1427-1429 |
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Keywords |
2DEG, AlGaAs/GaAs heterostructures mixers |
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The temperature and concentration dependences of the frequency bandwidth of terahertz heterodyne AlGaAs/GaAs detectors based on hot electron phenomena with phonon cooling of two-dimensional electrons have been measured by submillimeter spectroscopy with a high time resolution. At a temperature of 4.2 K, the frequency bandwidth at a level of 3 dB (f 3 dB) is varied from 150 to 250 MHz with a change in the concentration n s according to the power law f 3dB ∝ n −0.5 s due to the dominant contribution of piezoelectric phonon scattering. The minimum conversion loss of the semiconductor heterodyne detector is obtained in structures with a high carrier mobility (μ > 3 × 105 cm2 V−1 s−1 at 4.2 K). |
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1063-7826 |
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Notes |
Полоса и потери преобразования полупроводникового смесителя с фононным каналом охлаждения двумерных электронов |
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no |
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1216 |
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Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. |
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Title |
Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures |
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Journal Article |
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Year |
2010 |
Publication |
Bull. Russ. Acad. Sci. Phys. |
Abbreviated Journal |
Bull. Russ. Acad. Sci. Phys. |
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Volume |
74 |
Issue |
1 |
Pages |
100-102 |
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Keywords |
2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth |
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Abstract |
The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering. |
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1062-8738 |
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1217 |
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Morozov, P.; Lukina, M.; Shirmanova, M.; Divochiy, A.; Dudenkova, V.; Gol'tsman, G. N.; Becker, W.; Shcheslavskiy, V. I. |
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Title |
Singlet oxygen phosphorescence imaging by superconducting single-photon detector and time-correlated single-photon counting |
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Journal Article |
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Year |
2021 |
Publication |
Opt. Lett. |
Abbreviated Journal |
Opt. Lett. |
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Volume |
46 |
Issue |
6 |
Pages |
1217-1220 |
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Keywords |
SSPD, SNSPD, applications |
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This Letter presents, to the best of our knowledge, a novel optical configuration for direct time-resolved measurements of luminescence from singlet oxygen, both in solutions and from cultured cells on photodynamic therapy. The system is based on the superconducting single-photon detector, coupled to the confocal scanner that is modified for the near-infrared measurements. The recording of a phosphorescence signal from singlet oxygen at 1270 nm has been done using time-correlated single-photon counting. The performance of the system is verified by measuring phosphorescence from singlet oxygen generated by the photosensitizers commonly used in photodynamic therapy: methylene blue and chlorin e6. The described system can be easily upgraded to the configuration when both phosphorescence from singlet oxygen and fluorescence from the cells can be detected in the imaging mode. Thus, co-localization of the signal from singlet oxygen with the areas inside the cells can be done. |
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0146-9592 |
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PMID:33720151 |
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1221 |
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Zolotov, P. I.; Semenov, A. V.; Divochiy, A. V.; Goltsman, G. N.; Romanov, N. R.; Klapwijk, T. M. |
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Title |
Dependence of photon detection efficiency on normal-state sheet resistance in marginally superconducting films of NbN |
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Journal Article |
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2021 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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Volume |
31 |
Issue |
5 |
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1-5 |
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NbN SSPD, SNSPD |
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We present an extensive set of data on nanowire-type superconducting single-photon detectors based on niobium-nitride (NbN) to establish the empirical correlation between performance and the normal-state resistance per square. We focus, in particular, on the bias current, compared to the expected depairing current, needed to achieve a near-unity detection efficiency for photon detection. The data are discussed within the context of a model in which the photon energy triggers the movement of vortices i.e. superconducting dissipation, followed by thermal runaway. Since the model is based on the non-equilibrium theory for conventional superconductors deviations may occur, because the efficient regime is found when NbN acts as a marginal superconductor in which long-range phase coherence is frustrated. |
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1051-8223 |
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1222 |
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Zolotov, P.; Semenov, A.; Divochiy, A.; Goltsman, G. |
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A comparison of VN and NbN thin films towards optimal SNSPD efficiency |
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Journal Article |
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Year |
2021 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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Volume |
31 |
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5 |
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1-4 |
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NbN SSPD, SNSPD, WSi |
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Based on early phenomenological ideas about the operation of superconducting single-photon detectors (SSPD or SNSPD), it was expected that materials with a lower superconducting gap should perform better in the IR range. The plausibility of this concept could be checked using two popular SSPD materials – NbN and WSi films. However, these materials differ strongly in crystallographic structure (polycrystalline B1 versus amorphous), which makes their dependence on disorder different. In our work we present a study of the single-photon response of SSPDs made from two disordered B1 structure superconductors – vanadium nitride and niobium nitride thin films. We compare the intrinsic efficiency of devices made from films with different sheet resistance values. While both materials have a polycrystalline structure and comparable diffusion coefficient values, VN films show metallic behavior over a wide range of sheet resistance, in contrast to NbN films with an insulator-like temperature dependence of resistivity, which may be partially due to enhanced Coulomb interaction, leading to different starting points for the normal electron density of states. The results show that even though VN devices are more promising in terms of theoretical predictions, their optimal performance was not reached due to lower values of sheet resistance. |
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1223 |
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Moshkova, M.; Divochiy, A.; Morozov, P.; Vakhtomin, Y.; Antipov, A.; Zolotov, P.; Seleznev, V.; Ahmetov, M.; Smirnov, K. |
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Title |
High-performance superconducting photon-number-resolving detectors with 86% system efficiency at telecom range |
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Journal Article |
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Year |
2019 |
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J. Opt. Soc. Am. B |
Abbreviated Journal |
J. Opt. Soc. Am. B |
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Volume |
36 |
Issue |
3 |
Pages |
B20 |
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NbN PNR SSPD, SNSPD |
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The use of improved fabrication technology, highly disordered NbN thin films, and intertwined section topology makes it possible to create high-performance photon-number-resolving superconducting single-photon detectors (PNR SSPDs) that are comparable to conventional single-element SSPDs at the telecom range. The developed four-section PNR SSPD has simultaneously an 86±3% system detection efficiency, 35 cps dark count rate, ∼2 ns dead time, and maximum 90 ps jitter. An investigation of the PNR SSPD’s detection efficiency for multiphoton events shows good uniformity across sections. As a result, such a PNR SSPD is a good candidate for retrieving the photon statistics for light sources and quantum key distribution systems. |
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0740-3224 |
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1225 |
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Baeva, E. M.; Sidorova, M. V.; Korneev, A. A.; Smirnov, K. V.; Divochy, A. V.; Morozov, P. V.; Zolotov, P. I.; Vakhtomin, Y. B.; Semenov, A. V.; Klapwijk, T. M.; Khrapai, V. S.; Goltsman, G. N. |
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Thermal properties of NbN single-photon detectors |
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2018 |
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Phys. Rev. Applied |
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Phys. Rev. Applied |
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10 |
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6 |
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064063 (1 to 8) |
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NbN SSPD, SNSPD |
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We investigate thermal properties of a NbN single-photon detector capable of unit internal detection efficiency. Using an independent calibration of the coupling losses, we determine the absolute optical power absorbed by the NbN film and, via resistive superconductor thermometry, the temperature dependence of the thermal resistance Z(T) of the NbN film. In principle, this approach permits simultaneous measurement of the electron-phonon and phonon-escape contributions to the energy relaxation, which in our case is ambiguous because of the similar temperature dependencies. We analyze Z(T) with a two-temperature model and impose an upper bound on the ratio of electron and phonon heat capacities in NbN, which is surprisingly close to a recent theoretical lower bound for the same quantity in similar devices. |
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2331-7019 |
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1226 |
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Divochiy, A.; Misiaszek, M.; Vakhtomin, Y.; Morozov, P.; Smirnov, K.; Zolotov, P.; Kolenderski, P. |
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Single photon detection system for visible and infrared spectrum range |
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2018 |
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Opt. Lett. |
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Opt. Lett. |
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43 |
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24 |
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6085-6088 |
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We demonstrate niobium nitride based superconducting single-photon detectors sensitive in the spectral range 452-2300 nm. The system performance was tested in a real-life experiment with correlated photons generated by means of spontaneous parametric downconversion, where one photon was in the visible range and the other was in the infrared range. We measured a signal to noise ratio as high as 4x10(4) in our detection setting. A photon detection efficiency as high as 64% at 1550 nm and 15% at 2300 nm was observed. |
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0146-9592 |
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https://arxiv.org/abs/1807.04273 |
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1227 |
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Smirnov, K.; Divochiy, A.; Vakhtomin, Y.; Morozov, P.; Zolotov, P.; Antipov, A.; Seleznev, V. |
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NbN single-photon detectors with saturated dependence of quantum efficiency |
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2018 |
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Supercond. Sci. Technol. |
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Supercond. Sci. Technol. |
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31 |
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3 |
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035011 (1 to 8) |
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NbN SSPD, SNSPD |
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The possibility of creating NbN superconducting single-photon detectors with saturated dependence of quantum efficiency (QE) versus normalized bias current was investigated. It was shown that the saturation increases for the detectors based on finer films with a lower value of Rs300/Rs20. The decreasing of Rs300/Rs20 was related to the increasing influence of quantum corrections to conductivity of superconductors and, in turn, to the decrease of the electron diffusion coefficient. The best samples have a constant value of system QE 94% at Ib/Ic ~ 0.8 and wavelength 1310 nm. |
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0953-2048 |
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1232 |
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