Abstract: Calculations have been performed on superconducting constrictions with hyperbolic geometry. Stationary Ginzburg-Landau equations are used, neglecting magneticfields. Emphasis is placed on the difference between two-and three -dimensional constrictions, which is related to the difference between uniform-thickness (UT) and variable-thickness (VT) superconducting microbridges. The width of the constriction w, normalized to the coherence length ξ is indicated by the parameter A (â‰<192> w/2ξ). It is found that small (A < 0.1), three-dimensional constrictions and VT bridges have a sinusoidal current-phase relation, linear temperature dependence of the critical current I c, and an I cR product (Ris the normal state resistance) equal to the Ambegaokar-Baratoff expression for Josephson junctions near T c. Two-dimensional constrictions behave as if they consist of an inner core with junction properties, in series with the films on both sides. The core consists of the region within a coherence length from the center of the structure. This size is temperature dependent. The core shows a sinusoidal current-phase relation and IcR according to Ambegaokar and Baratoff. For the whole constriction neither the phase difference nor R is finite. Two-dimensional constrictions have linear temperature dependence only when they are extremely narrow (A < 0.001). In two-dimensionalbridges the order parameter is depressed cover a distance of approximately the coherence length; in small three-dimensional constrictions this distance is approximately equal to the width. In narrow constrictions (and short microbridges) the current is not homogeneously distributedover the cross section. The effect has been investigated that occurs when in three-dimensional constrictions the width w is not much larger than l 0, the electron mean free path in the basic material. To this purpose a Ginzburg-Landau equation is derived from the Zaitsev boundary conditions which is valid for continuously changing material parameters. The critical current is decreased, but the IcR product remains constant.The results of the calculations are compared with experimental results for superconducting microbridges.

Abstract: Phase slips are topological fluctuations that carry the superconducting order-parameter field between distinct current-carrying states. Owing to these phase slips, superconducting nanowires acquire electrical resistance. In such wires, it is well known that at higher temperatures phase slips occur through the process of thermal barrier-crossing by the order-parameter field. At low temperatures, the general expectation is that phase slips should proceed through quantum tunnelling events, which are known as quantum phase slips. However, resistive measurements have produced evidence both for and against the occurrence of quantum phase slips. Here, we report evidence for the observation of individual quantum phase-slip events in homogeneous ultranarrow wires at high bias currents. We accomplish this through measurements of the distribution of switching currents for which the width exhibits a rather counter-intuitive, monotonic increase with decreasing temperature. Importantly, measurements show that in nanowires with larger critical currents, quantum fluctuations dominate thermal fluctuations up to higher temperatures.

Abstract: Present models of the superconducting-to-normal transition in transition-edge sensors (TESs) do not describe the current distribution within a biased TES. This distribution is complicated by normal-metal features that are integral to TES design. We present a model with one free parameter that describes the evolution of the current distribution with bias. To probe the current distribution experimentally, we fabricated TES devices with different current return geometries. Devices where the current return geometry mirrors current flow within the device have sharper transitions, thus allowing for a direct test of the current-flow model.Measurements from these devices show that current meanders through a TES low in the resistivetransition but flows across the normal-metal features by 40% of the normal-state resistance. Comparison of transition sharpness between device designs reveals that self-induced magnetic fields play an important role in determining the width of the superconducting transition.