|
Records |
Links |
|
Author |
Verevkin, A.; Pearlman, A.; Slysz, W.; Zhang, J.; Currie, M.; Korneev, A.; Chulkova, G.; Okunev, O.; Kouminov, P.; Smirnov, K.; Voronov, B.; Gol'tsman, G. N.; Sobolewski, R. |
![goto web page (via DOI) doi](img/doi.gif)
|
|
Title |
Ultrafast superconducting single-photon detectors for near-infrared-wavelength quantum communications |
Type |
Journal Article |
|
Year |
2004 |
Publication |
J. Modern Opt. |
Abbreviated Journal |
J. Modern Opt. |
|
|
Volume |
51 |
Issue |
9-10 |
Pages |
1447-1458 |
|
|
Keywords |
NbN SSPD, SNSPD |
|
|
Abstract |
The paper reports progress on the design and development of niobium-nitride, superconducting single-photon detectors (SSPDs) for ultrafast counting of near-infrared photons for secure quantum communications. The SSPDs operate in the quantum detection mode, based on photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-width superconducting stripe. The devices are fabricated from 3.5 nm thick NbN films and kept at cryogenic (liquid helium) temperatures inside a cryostat. The detector experimental quantum efficiency in the photon-counting mode reaches above 20% in the visible radiation range and up to 10% at the 1.3–1.55 μn infrared range. The dark counts are below 0.01 per second. The measured real-time counting rate is above 2 GHz and is limited by readout electronics (the intrinsic response time is below 30 ps). The SSPD jitter is below 18 ps, and the best-measured value of the noise-equivalent power (NEP) is 2 × 10−18 W/Hz1/2. at 1.3 μm. In terms of photon-counting efficiency and speed, these NbN SSPDs significantly outperform semiconductor avalanche photodiodes and photomultipliers. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0950-0340 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference ![sorted by Conference field, ascending order (up)](img/sort_asc.gif) |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1488 |
|
Permanent link to this record |
|
|
|
|
Author |
Korneev, A.; Lipatov, A.; Okunev, O.; Chulkova, G.; Smirnov, K.; Gol’tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, R. |
![goto web page (via DOI) doi](img/doi.gif)
|
|
Title |
GHz counting rate NbN single-photon detector for IR diagnostics of VLSI CMOS circuits |
Type |
Journal Article |
|
Year |
2003 |
Publication |
Microelectronic Engineering |
Abbreviated Journal |
Microelectronic Engineering |
|
|
Volume |
69 |
Issue |
2-4 |
Pages |
274-278 |
|
|
Keywords |
NbN SSPD, SNSPD, applications |
|
|
Abstract |
We present a new, simple to manufacture superconducting single-photon detector operational in the range from ultraviolet to mid-infrared radiation wavelengths. The detector combines GHz counting rate, high quantum efficiency and very low level of dark (false) counts. At 1.3–1.5 μm wavelength range our detector exhibits a quantum efficiency of 5–10%. The detector photoresponse voltage pulse duration was measured to be about 150 ps with jitter of 35 ps and both of them were limited mostly by our measurement equipment. In terms of quantum efficiency, dark counts level, speed of operation the detector surpasses all semiconductor counterparts and was successfully applied for CMOS integrated circuits diagnostics. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0167-9317 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference ![sorted by Conference field, ascending order (up)](img/sort_asc.gif) |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1511 |
|
Permanent link to this record |
|
|
|
|
Author |
Zhang, J.; Boiadjieva, N.; Chulkova, G.; Deslandes, H.; Gol'tsman, G. N.; Korneev, A.; Kouminov, P.; Leibowitz, M.; Lo, W.; Malinsky, R.; Okunev, O.; Pearlman, A.; Slysz, W.; Smirnov, K.; Tsao, C.; Verevkin, A.; Voronov, B.; Wilsher, K.; Sobolewski, R. |
![goto web page (via DOI) doi](img/doi.gif)
|
|
Title |
Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors |
Type |
Journal Article |
|
Year |
2003 |
Publication |
Electron. Lett. |
Abbreviated Journal |
Electron. Lett. |
|
|
Volume |
39 |
Issue |
14 |
Pages |
1086-1088 |
|
|
Keywords |
NbN SSPD, SNSPD, applications |
|
|
Abstract |
The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0013-5194 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference ![sorted by Conference field, ascending order (up)](img/sort_asc.gif) |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1512 |
|
Permanent link to this record |
|
|
|
|
Author |
Zhang, J.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R.; Okunev, O.; Chulkova, G.; Gol’tsman, G. N. |
![goto web page (via DOI) doi](img/doi.gif)
|
|
Title |
Time delay of resistive-state formation in superconducting stripes excited by single optical photons |
Type |
Journal Article |
|
Year |
2003 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
|
|
Volume |
67 |
Issue |
13 |
Pages |
132508 (1 to 4) |
|
|
Keywords |
NbN SSPD, SNSPD |
|
|
Abstract |
We have observed a 65(±5)-ps time delay in the onset of a resistive-state formation in 10-nm-thick, 130-nm-wide NbN superconducting stripes exposed to single photons. The delay in the photoresponse decreased to zero when the stripe was irradiated by multi-photon (classical) optical pulses. Our NbN structures were kept at 4.2 K, well below the material’s critical temperature, and were illuminated by 100-fs-wide optical pulses. The time-delay phenomenon has been explained within the framework of a model based on photon-induced generation of a hotspot in the superconducting stripe and subsequent, supercurrent-assisted, resistive-state formation across the entire stripe cross section. The measured time delays in both the single-photon and two-photon detection regimes agree well with theoretical predictions of the resistive-state dynamics in one-dimensional superconducting stripes. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0163-1829 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference ![sorted by Conference field, ascending order (up)](img/sort_asc.gif) |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1519 |
|
Permanent link to this record |
|
|
|
|
Author |
Lipatov, A.; Okunev, O.; Smirnov, K.; Chulkova, G.; Korneev, A.; Kouminov, P.; Gol'tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, R. |
![goto web page (via DOI) doi](img/doi.gif)
|
|
Title |
An ultrafast NbN hot-electron single-photon detector for electronic applications |
Type |
Journal Article |
|
Year |
2002 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
|
|
Volume |
15 |
Issue |
12 |
Pages |
1689-1692 |
|
|
Keywords |
NbN SSPD, SNSPD, QE, jitter, dark counts |
|
|
Abstract |
We present the latest generation of our superconducting single-photon detector (SPD), which can work from ultraviolet to mid-infrared optical radiation wavelengths. The detector combines a high speed of operation and low jitter with high quantum efficiency (QE) and very low dark count level. The technology enhancement allows us to produce ultrathin (3.5 nm thick) structures that demonstrate QE hundreds of times better, at 1.55 μm, than previous 10 nm thick SPDs. The best, 10 × 10 μm2, SPDs demonstrate QE up to 5% at 1.55 μm and up to 11% at 0.86 μm. The intrinsic detector QE, normalized to the film absorption coefficient, reaches 100% at bias currents above 0.9 Ic for photons with wavelengths shorter than 1.3 μm. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0953-2048 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference ![sorted by Conference field, ascending order (up)](img/sort_asc.gif) |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1533 |
|
Permanent link to this record |
|
|
|
|
Author |
Verevkin, A.; Xu, Y.; Zheng, X.; Williams, C.; Sobolewski, Roman; Okunev, O.; Smirnov, K.; Chulkova, G.; Korneev, A.; Lipatov, A.; Gol’tsman, G. N. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
Superconducting NbN-based ultrafast hot-electron single-photon detector for infrared range |
Type |
Conference Article |
|
Year |
2001 |
Publication |
Proc. 12th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 12th Int. Symp. Space Terahertz Technol. |
|
|
Volume |
|
Issue |
|
Pages |
462-468 |
|
|
Keywords |
NbN SSPD, SNSPD |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference ![sorted by Conference field, ascending order (up)](img/sort_asc.gif) |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1539 |
|
Permanent link to this record |
|
|
|
|
Author |
Gol’tsman, G. N.; Okunev, O.; Chulkova, G.; Lipatov, A.; Semenov, A.; Smirnov, K.; Voronov, B.; Dzardanov, A.; Williams, C.; Sobolewski, R. |
![goto web page (via DOI) doi](img/doi.gif)
|
|
Title |
Picosecond superconducting single-photon optical detector |
Type |
Journal Article |
|
Year |
2001 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
|
|
Volume |
79 |
Issue |
6 |
Pages |
705-707 |
|
|
Keywords |
NbN SSPD, SNSPD |
|
|
Abstract |
We experimentally demonstrate a supercurrent-assisted, hotspot-formation mechanism for ultrafast detection and counting of visible and infrared photons. A photon-induced hotspot leads to a temporary formation of a resistive barrier across the superconducting sensor strip and results in an easily measurable voltage pulse. Subsequent hotspot healing in ∼30 ps time frame, restores the superconductivity (zero-voltage state), and the detector is ready to register another photon. Our device consists of an ultrathin, very narrow NbN strip, maintained at 4.2 K and current-biased close to the critical current. It exhibits an experimentally measured quantum efficiency of ∼20% for 0.81 μm wavelength photons and negligible dark counts. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0003-6951 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference ![sorted by Conference field, ascending order (up)](img/sort_asc.gif) |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1543 |
|
Permanent link to this record |
|
|
|
|
Author |
Svechnikov, S. I.; Okunev, O. V.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M.; Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S. |
![goto web page (via DOI) doi](img/doi.gif)
|
|
Title |
2.5 THz NbN hot electron mixer with integrated tapered slot antenna |
Type |
Journal Article |
|
Year |
1997 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
|
|
Volume |
7 |
Issue |
2 |
Pages |
3548-3551 |
|
|
Keywords |
NbN HEB mixers |
|
|
Abstract |
A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
1051-8223 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference ![sorted by Conference field, ascending order (up)](img/sort_asc.gif) |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1595 |
|
Permanent link to this record |
|
|
|
|
Author |
Verevkin, A.; Zhang, J.; Pearlman, A.; Slysz, W.; Sobolewski, Roman; Korneev, A.; Kouminov, P.; Okunev, O.; Chulkova, G.; Gol'tsman, G. |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
Ultimate sensitivity of superconducting single-photon detectors in the visible to infrared range |
Type |
Miscellaneous |
|
Year |
2004 |
Publication |
ResearchGate |
Abbreviated Journal |
ResearchGate |
|
|
Volume |
|
Issue |
|
Pages |
|
|
|
Keywords |
NbN SSPD, SNSPD |
|
|
Abstract |
We present our quantum efficiency (QE) and noise equivalent power (NEP) measurements of the meandertype ultrathin NbN superconducting single-photon detector in the visible to infrared radiation range. The nanostructured devices with 3.5-nm film thickness demonstrate QE up to~ 10% at 1.3–1.55 µm wavelength, and up to 20% in the entire visible range. The detectors are sensitive to infrared radiation with the wavelengths down to~ 10 µm. NEP of about 2× 10-18 W/Hz1/2 was obtained at 1.3 µm wavelength. Such high sensitivity together with GHz-range counting speed, make NbN photon counters very promising for efficient, ultrafast quantum communications and another applications. We discuss the origin of dark counts in our devices and their ultimate sensitivity in terms of the resistive fluctuations in our superconducting nanostructured devices. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference ![sorted by Conference field, ascending order (up)](img/sort_asc.gif) |
|
|
|
Notes |
Not attributed to any publisher! File name: PR9VervekinSfin_f.doc; Author: JAOLEARY; Last modification date: 2004-02-26 |
Approved |
no |
|
|
Call Number |
|
Serial |
1751 |
|
Permanent link to this record |
|
|
|
|
Author |
Okunev, O.; Smirnov, K.; Chulkova, G.; Korneev, A.; Lipatov, A.; Gol'tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, Roman |
![find record details (via OpenURL) openurl](img/xref.gif)
|
|
Title |
Ultrafast NBN hot-electron single-photon detectors for electronic applications |
Type |
Abstract |
|
Year |
2002 |
Publication |
Abstracts 8-th IUMRS-ICEM |
Abbreviated Journal |
Abstracts 8-th IUMRS-ICEM |
|
|
Volume |
|
Issue |
|
Pages |
|
|
|
Keywords |
NbN SSPD, SNSPD |
|
|
Abstract |
We present a new, simple to manufacture, single-photon detector (SPD), which can work from ultraviolet to near-infrared wavelengths of optical radiation and combines high speed of operation, high quantum efficiency (QE), and very low dark counts. The devices are superconducting and operate at temperature below 5 K. The physics of operation of our SPD is based on formation of a photon-induced resistive hotspot and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconductor. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference ![sorted by Conference field, ascending order (up)](img/sort_asc.gif) |
8th IUMRS International Conference on Electronic Materials |
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1532 |
|
Permanent link to this record |