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Slysz, W., Wegrzecki, M., Papis, E., Gol'tsman, G. N., Verevkin, A., & Sobolewski, R. (2004). A method of optimization of the NbN superconducting single-photon detector (Vol. 36).
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Slysz, W., Wegrzecki, M., Bar, J., Grabiec, P., Gol'tsman, G. N., Verevkin, M., et al. (2004). NbN superconducting single-photon detectors coupled with a communication fiber (Vol. 37).
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Okunev, O., Smirnov, K., Chulkova, G., Korneev, A., Lipatov, A., Gol'tsman, G., et al. (2002). Ultrafast NBN hot-electron single-photon detectors for electronic applications. In Abstracts 8-th IUMRS-ICEM.
Abstract: We present a new, simple to manufacture, single-photon detector (SPD), which can work from ultraviolet to near-infrared wavelengths of optical radiation and combines high speed of operation, high quantum efficiency (QE), and very low dark counts. The devices are superconducting and operate at temperature below 5 K. The physics of operation of our SPD is based on formation of a photon-induced resistive hotspot and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconductor.
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Sobolewski, R., Zhang, J., Slysz, W., Pearlman, A., Verevkin, A., Lipatov, A., et al. (2003). Ultrafast superconducting single-photon optical detectors. In J. Spigulis, J. Teteris, M. Ozolinsh, & A. Lusis (Eds.), Proc. SPIE (Vol. 5123, pp. 1–11). SPIE.
Abstract: We present a new class of single-photon devices for counting of both visible and infrared photons. Our superconducting single-photon detectors (SSPDs) are characterized by the intrinsic quantum efficiency (QE) reaching up to 100%, above 10 GHz counting rate, and negligible dark counts. The detection mechanism is based on the photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconducting stripe. The devices are fabricated from 3.5-nm-thick NbN films and operate at 4.2 K, well below the NbN superconducting transition temperature. Various continuous and pulsed laser sources in the wavelength range from 0.4 μm up to >3 μm were implemented in our experiments, enabling us to determine the detector QE in the photon-counting mode, response time, and jitter. For our best 3.5-nm-thick, 10×10 μm2-area devices, QE was found to reach almost 100% for any wavelength shorter than about 800 nm. For longer-wavelength (infrared) radiation, QE decreased exponentially with the photon wavelength increase. Time-resolved measurements of our SSPDs showed that the system-limited detector response pulse width was below 150 ps. The system jitter was measured to be 35 ps. In terms of the counting rate, jitter, and dark counts, the NbN SSPDs significantly outperform their semiconductor counterparts. Already identifeid and implemented applications of our devices range from noninvasive testing of semiconductor VLSI circuits to free-space quantum communications and quantum cryptography.
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Verevkin, A., Slysz, W., Pearlman, A., Zhang, J., Sobolewski, R., Okunev, O., et al. (2003). Real-time GHz-rate counting of infrared photons using nanostructured NbN superconducting detectors. In CLEO/QELS (CThM8). Optical Society of America.
Abstract: We demonstrate that our ultrathin, nanometer-width NbN superconducting single-photon detectors are capable of above 1-GHz-frequency, real-time counting of near-infrared photons. The measured system jitter of the detector is below 15 ps.
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Zhang, J., Pearlman, A., Slysz, W., Verevkin, A., Sobolewski, R., Okunev, O., et al. (2003). Infrared picosecond superconducting single-photon detectors for CMOS circuit testing. In CLEO/QELS (Cmv4). Optical Society of America.
Abstract: Novel, NbN superconducting single-photon detectors have been developed for ultrafast, high quantum efficiency detection of single quanta of infrared radiation. Our devices have been successfully implemented in a commercial VLSI CMOS circuit testing system.
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Verevkin, A. A., Zhang, J., Slysz, W., Sobolewski, R., Lipatov, A. P., Okunev, O., et al. (2002). Superconducting single-photon detectors for GHz-rate free-space quantum communications. In J. C. Ricklin, & D. G. Voelz (Eds.), Proc. SPIE (Vol. 4821, pp. 447–454). SPIE.
Abstract: We report our studies on the performance of new NbN ultrathin-film superconducting single-photon detectors (SSPDs). Our SSPDs exhibit experimentally measured quantum efficiencies from 5% at wavelength λ = 1550 nm up to 10% at λ = 405 nm, with exponential, activation-energy-type spectral sensitivity dependence in the 0.4-μm – 3-μm wavelength range. Using a variable optical delay setup, we have shown that our NbN SSPDs can resolve optical photons with a counting rate up to 10 GHz, presently limited by the read-out electronics. The measured device jitter was below 35 ps under optimum biasing conditions. The extremely high photon counting rate, together with relatively high (especially for λ > 1 μm) quantum efficiency, low jitter, and very low dark counts, make NbN SSPDs very promising for free-space communications and quantum cryptography.
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Milostnaya, I., Korneev, A., Minaeva, O., Rubtsova, I., Slepneva, S., Seleznev, V., et al. (2005). Superconducting nanostructured detectors capable of single photon counting of mid-infrared optical radiation. In A. Rogalski, E. L. Dereniak, & F. F. Sizov (Eds.), Proc. SPIE (Vol. 5957, 59570A (1 to 9)). SPIE.
Abstract: We report on our progress in research and development of ultrafast superconducting single-photon detectors (SSPDs) based on ultrathin NbN nanostructures. Our SSPDs were made of the 4-nm-thick NbN films with Tc 11 K, patterned as meander-shaped, 100-nm-wide strips, and covering an area of 10×10 μm2. The detectors exploit a combined detection mechanism, where upon a single-photon absorption, a hotspot of excited electrons and redistribution of the biasing supercurrent, jointly produce a picosecond voltage transient signal across the superconducting nanostripe. The SSPDs are typically operated at 4.2 K, but their sensitivity in the infrared radiation range can be significantly improved by lowering the operating temperature from 4.2 K to 2 K. When operated at 2 K, the SSPD quantum efficiency (QE) for visible light photons reaches 30-40%, which is the saturation value limited by the optical absorption of our 4-nm-thick NbN film. With the wavelength increase of the incident photons,the QE of SSPDs decreases significantly, but even at the wavelength of 6 μm, the detector is able to count single photons and exhibits QE of about 10-2 %. The dark (false) count rate at 2 K is as low as 2x10-4 s,-1 which makes our detector essentially a background-limited sensor. The very low dark-count rate results in a noise equivalent power (NEP) below 10-18 WHz-1/2 for the mid-infrared range (6 μm). Further improvement of the SSPD performance in the mid-infrared range can be obtained by substituting NbN for another, lower-Tc materials with a narrow superconducting gap and low quasiparticles diffusivity. The use of such superconductors should shift the cutoff wavelength below 10 μm.
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Slysz, W., Wegrzecki, M., Bar, J., Grabiec, P., Górska, M., Latta, C., et al. (2005). Fiber-coupled quantum-communications receiver based on two NbN superconducting single-photon detectors. In A. Rogalski, E. L. Dereniak, & F. F. Sizov (Eds.), Proc. SPIE (Vol. 5957, 59571K (1 to 10)). SPIE.
Abstract: We present the design and performance of a novel, two-channel single-photon receiver, based on two fiber-coupled NbN superconducting single-photon detectors (SSPDs). The SSPDs are nanostructured superconducting meanders covering an area of 100 μm2 and are known for ultrafast and efficient counting of single, visible-to-infrared photons. Their operation has been explained within a phenomenological hot-electron photoresponse model. Our receiver is intended for fiber-based quantum cryptography and communication systems, operational at near-infrared (NIR) telecommunication wavelengths, λ = 1.3 μm and λ = 1.55 μm. Coupling between the NbN detector and a single-mode optical fiber was achieved using a specially designed, micromechanical photoresist ring, positioned directly over the SSPD active area. The positioning accuracy of the ring was below 1 μm. The receiver with SSPDs was placed (immersed) in a standard liquid-helium transport Dewar and kept without interruption for over two months at 4.2 K. At the same time, the optical fiber inputs and electrical outputs were kept at room temperature. Our best system reached a system quantum efficiency of up to 0.3 % in the NIR radiation range, with the detector coupling efficiency of about 30 %. The response time was measured to be about 250 ps and was limited by our read-out electronics. The measured jitter was close to 35 ps. The presented performance parameters show that our NIR single photon detectors are suitable for practical quantum cryptography and for applications in quantum-correlation experiments.
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Zhang, J., Verevkin, A., Slysz, W., Chulkova, G., Korneev, A., Lipatov, A., et al. (2017). Time-resolved characterization of NbN superconducting single-photon optical detectors. In J. C. Armitage (Ed.), Proc. SPIE (Vol. 10313, 103130F (1 to 3)). SPIE.
Abstract: NbN superconducting single-photon detectors (SSPDs) are very promising devices for their picosecond response time, high intrinsic quantum efficiency, and high signal-to-noise ratio within the radiation wavelength from ultraviolet to near infrared (0.4 gm to 3 gm) [1-3]. The single photon counting property of NbN SSPDs have been investigated thoroughly and a model of hotspot formation has been introduced to explain the physics of the photon- counting mechanism [4-6]. At high incident flux density (many-photon pulses), there are, of course, a large number of hotspots simultaneously formed in the superconducting stripe. If these hotspots overlap with each other across the width w of the stripe, a resistive barrier is formed instantly and a voltage signal can be generated. We assume here that the stripe thickness d is less than the electron diffusion length, so the hotspot region can be considered uniform. On the other hand, when the photon flux is so low that on average only one hotspot is formed across w at a given time, the formation of the resistive barrier will be realized only when the supercurrent at sidewalks surpasses the critical current (jr) of the superconducting stripe [1]. In the latter situation, the formation of the resistive barrier is associated with the phase-slip center (PSC) development. The effect of PSCs on the suppression of superconductivity in nanowires has been discussed very recently [8, 9] and is the subject of great interest.
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