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Author Sobolewski, R.; Verevkin, A.; Gol’tsman, G. N.
Title Superconducting optical single-photon detectors Type Conference Article
Year 2004 Publication CLEO/QELS Abbreviated Journal CLEO/QELS
Volume Issue Pages IThD1
Keywords SSPD, QE, jitter, dark counts
Abstract We review the development of superconducting single-photon detectors. The devices are characterized by experimental quantum efficiency of ~8% for infrared photons, counting rate ~2 GHz, 18 ps jitter, and <0.01 per second dark counts.
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Corporate Author Thesis
Publisher Optical Society of America Place of Publication Editor
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Notes Approved no
Call Number Sobolewski:04 Serial 1489
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Author Ryabchun, S.; Korneev, A.; Matvienko, V.; Smirnov, K.; Kouminov, P.; Seleznev, V.; Kaurova, N.; Voronov, B.; Gol’tsman, G. N.
Title Superconducting single photon detectors array based on hot electron phenomena Type Conference Article
Year 2004 Publication Proc. 15th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 15th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 242-247
Keywords NbN SSPD arrays, SNSPD
Abstract In this paper we propose to use time domain multiplexing for large format arrays of superconducting single photon detectors (SSPDs) of the terahertz, visible and infrared frequency ranges based on ultrathin superconducting NbN films. Effective realization of time domain multiplexing for SSPD arrays is possible due to a short electric pulse of the SSPD as response to radiation quantum absorption, picosecond jitter and extremely low noise equivalent power (NEP). We present experimental results of testing 2×2 arrays in the infrared waveband. The measured noise equivalent power in the infrared and expected for the terahertz waveband is 10 – 21 WHz -1/2 . The best quantum efficiency (QE) of SSPD is 50% at 1.3 µm wavelength.
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Notes Approved no
Call Number Serial 1493
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Author Goltsman, G.; Korneev, A.; Izbenko, V.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Verevkin, A.; Zhang, J.; Pearlman, A.; Slysz, W.; Sobolewski, R.
Title Nano-structured superconducting single-photon detectors Type Journal Article
Year 2004 Publication Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment Abbreviated Journal
Volume 520 Issue 1-3 Pages 527-529
Keywords NbN SSPD, SNSPD
Abstract NbN detectors, formed into meander-type, 10×10-μm2 area structures, based on ultrathin (down to 3.5-nm thickness) and nanometer-width (down to below 100 nm) NbN films are capable of efficiently detecting and counting single photons from the ultraviolet to near-infrared optical wavelength range. Our best devices exhibit QE >15% in the visible range and ∼10% in the 1.3–1.5-μm infrared telecommunication window. The noise equivalent power (NEP) ranges from ∼10−17 W/Hz1/2 at 1.5 μm radiation to ∼10−19 W/Hz1/2 at 0.56 μm, and the dark counts are over two orders of magnitude lower than in any semiconducting competitors. The intrinsic response time is estimated to be <30 ps. Such ultrafast detector response enables a very high, GHz-rate real-time counting of single photons. Already established applications of NbN photon counters are non-invasive testing and debugging of VLSI Si CMOS circuits and quantum communications.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference (up)
Notes Approved no
Call Number Serial 1495
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Author Rubtsova, I.; Korneev, A.; Matvienko, V.; Chulkova, G.; Milostnaya, I.; Goltsman, G.; Pearlman, A.; Slysz, W.; Verevkin, A.; Sobolewski, R.
Title Spectral sensitivity, quantum efficiency, and noise equivalent power of NbN superconducting single-photon detectors in the IR range Type Conference Article
Year 2004 Publication Proc. 29th IRMMW / 12th THz Abbreviated Journal Proc. 29th IRMMW / 12th THz
Volume Issue Pages 461-462
Keywords NbN SSPD, SNSPD
Abstract We have developed nanostructured NbN superconducting single-photon detectors capable of GHz-rate photon counting in the 0.4 to 5 /spl mu/m wavelength range. Quantum efficiency of 30%, dark count rate 3/spl times/10/sup -4/ s/sup -1/, and NEP=10/sup -20/ W/Hz/sup -1/2/ have been measured at the 1.3-/spl mu/m wavelength for the device operating at 2.0 K.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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Area Expedition Conference (up)
Notes Approved no
Call Number Serial 1507
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Author Korneev, A.; Lipatov, A.; Okunev, O.; Chulkova, G.; Smirnov, K.; Gol’tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, R.
Title GHz counting rate NbN single-photon detector for IR diagnostics of VLSI CMOS circuits Type Journal Article
Year 2003 Publication Microelectronic Engineering Abbreviated Journal Microelectronic Engineering
Volume 69 Issue 2-4 Pages 274-278
Keywords NbN SSPD, SNSPD, applications
Abstract We present a new, simple to manufacture superconducting single-photon detector operational in the range from ultraviolet to mid-infrared radiation wavelengths. The detector combines GHz counting rate, high quantum efficiency and very low level of dark (false) counts. At 1.3–1.5 μm wavelength range our detector exhibits a quantum efficiency of 5–10%. The detector photoresponse voltage pulse duration was measured to be about 150 ps with jitter of 35 ps and both of them were limited mostly by our measurement equipment. In terms of quantum efficiency, dark counts level, speed of operation the detector surpasses all semiconductor counterparts and was successfully applied for CMOS integrated circuits diagnostics.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0167-9317 ISBN Medium
Area Expedition Conference (up)
Notes Approved no
Call Number Serial 1511
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Author Zhang, J.; Boiadjieva, N.; Chulkova, G.; Deslandes, H.; Gol'tsman, G. N.; Korneev, A.; Kouminov, P.; Leibowitz, M.; Lo, W.; Malinsky, R.; Okunev, O.; Pearlman, A.; Slysz, W.; Smirnov, K.; Tsao, C.; Verevkin, A.; Voronov, B.; Wilsher, K.; Sobolewski, R.
Title Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors Type Journal Article
Year 2003 Publication Electron. Lett. Abbreviated Journal Electron. Lett.
Volume 39 Issue 14 Pages 1086-1088
Keywords NbN SSPD, SNSPD, applications
Abstract The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0013-5194 ISBN Medium
Area Expedition Conference (up)
Notes Approved no
Call Number Serial 1512
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Author Gol’tsman, G. N.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Drakinsky, V.; Zhang, J.; Verevkin, A.; Sobolewski, R.
Title Fabrication of nanostructured superconducting single-photon detectors Type Journal Article
Year 2003 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 13 Issue 2 Pages 192-195
Keywords NbN SSPD, SNSPD
Abstract Fabrication of NbN superconducting single-photon detectors, based on the hotspot effect is presented. The hotspot formation arises in an ultrathin and submicrometer-width superconductor stripe and, together with the supercurrent redistribution, leads to the resistive detector response upon absorption of a photon. The detector has a meander structure to maximally increase its active area and reach the highest detection efficiency. Main processing steps, leading to efficient devices, sensitive in 0.4-5 /spl mu/m wavelength range, are presented. The impact of various processing steps on the performance and operational parameters of our detectors is discussed.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1558-2515 ISBN Medium
Area Expedition Conference (up)
Notes Approved no
Call Number Serial 1515
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Author Zhang, J.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R.; Okunev, O.; Chulkova, G.; Gol’tsman, G. N.
Title Time delay of resistive-state formation in superconducting stripes excited by single optical photons Type Journal Article
Year 2003 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 67 Issue 13 Pages 132508 (1 to 4)
Keywords NbN SSPD, SNSPD
Abstract We have observed a 65(±5)-ps time delay in the onset of a resistive-state formation in 10-nm-thick, 130-nm-wide NbN superconducting stripes exposed to single photons. The delay in the photoresponse decreased to zero when the stripe was irradiated by multi-photon (classical) optical pulses. Our NbN structures were kept at 4.2 K, well below the material’s critical temperature, and were illuminated by 100-fs-wide optical pulses. The time-delay phenomenon has been explained within the framework of a model based on photon-induced generation of a hotspot in the superconducting stripe and subsequent, supercurrent-assisted, resistive-state formation across the entire stripe cross section. The measured time delays in both the single-photon and two-photon detection regimes agree well with theoretical predictions of the resistive-state dynamics in one-dimensional superconducting stripes.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0163-1829 ISBN Medium
Area Expedition Conference (up)
Notes Approved no
Call Number Serial 1519
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Author Lipatov, A.; Okunev, O.; Smirnov, K.; Chulkova, G.; Korneev, A.; Kouminov, P.; Gol'tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, R.
Title An ultrafast NbN hot-electron single-photon detector for electronic applications Type Journal Article
Year 2002 Publication Supercond. Sci. Technol. Abbreviated Journal Supercond. Sci. Technol.
Volume 15 Issue 12 Pages 1689-1692
Keywords NbN SSPD, SNSPD, QE, jitter, dark counts
Abstract We present the latest generation of our superconducting single-photon detector (SPD), which can work from ultraviolet to mid-infrared optical radiation wavelengths. The detector combines a high speed of operation and low jitter with high quantum efficiency (QE) and very low dark count level. The technology enhancement allows us to produce ultrathin (3.5 nm thick) structures that demonstrate QE hundreds of times better, at 1.55 μm, than previous 10 nm thick SPDs. The best, 10 × 10 μm2, SPDs demonstrate QE up to 5% at 1.55 μm and up to 11% at 0.86 μm. The intrinsic detector QE, normalized to the film absorption coefficient, reaches 100% at bias currents above 0.9 Ic for photons with wavelengths shorter than 1.3 μm.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0953-2048 ISBN Medium
Area Expedition Conference (up)
Notes Approved no
Call Number Serial 1533
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Author Verevkin, A.; Xu, Y.; Zheng, X.; Williams, C.; Sobolewski, Roman; Okunev, O.; Smirnov, K.; Chulkova, G.; Korneev, A.; Lipatov, A.; Gol’tsman, G. N.
Title Superconducting NbN-based ultrafast hot-electron single-photon detector for infrared range Type Conference Article
Year 2001 Publication Proc. 12th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 12th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 462-468
Keywords NbN SSPD, SNSPD
Abstract
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Notes Approved no
Call Number Serial 1539
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Author Somani, S.; Kasapi, S.; Wilsher, K.; Lo, W.; Sobolewski, R.; Gol’tsman, G.
Title New photon detector for device analysis: Superconducting single-photon detector based on a hot electron effect Type Journal Article
Year 2001 Publication J. Vac. Sci. Technol. B Abbreviated Journal J. Vac. Sci. Technol. B
Volume 19 Issue 6 Pages 2766-2769
Keywords NbN SSPD, SNSPD
Abstract A novel superconducting single-photon detector (SSPD), intrinsically capable of high quantum efficiency (up to 20%) over a wide spectral range (ultraviolet to infrared), with low dark counts (<1 cps), and fast (<40 ps) timing resolution, is described. This SSPD has been used to perform timing measurements on complementary metal–oxide–semiconductor integrated circuits (ICs) by detecting the infrared light emission from switching transistors. Measurements performed from the backside of a 0.13 μm geometry flip–chip IC are presented. Other potential applications for this detector are in telecommunications, quantum cryptography, biofluorescence, and chemical kinetics.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0734211X ISBN Medium
Area Expedition Conference (up)
Notes Approved no
Call Number Serial 1542
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Author Gol’tsman, G. N.; Okunev, O.; Chulkova, G.; Lipatov, A.; Semenov, A.; Smirnov, K.; Voronov, B.; Dzardanov, A.; Williams, C.; Sobolewski, R.
Title Picosecond superconducting single-photon optical detector Type Journal Article
Year 2001 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 79 Issue 6 Pages 705-707
Keywords NbN SSPD, SNSPD
Abstract We experimentally demonstrate a supercurrent-assisted, hotspot-formation mechanism for ultrafast detection and counting of visible and infrared photons. A photon-induced hotspot leads to a temporary formation of a resistive barrier across the superconducting sensor strip and results in an easily measurable voltage pulse. Subsequent hotspot healing in ∼30 ps time frame, restores the superconductivity (zero-voltage state), and the detector is ready to register another photon. Our device consists of an ultrathin, very narrow NbN strip, maintained at 4.2 K and current-biased close to the critical current. It exhibits an experimentally measured quantum efficiency of ∼20% for 0.81 μm wavelength photons and negligible dark counts.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951 ISBN Medium
Area Expedition Conference (up)
Notes Approved no
Call Number Serial 1543
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Author Il'in, K. S.; Verevkin, A. A.; Gol'tsman, G. N.; Sobolewski, R.
Title Infrared hot-electron NbN superconducting photodetectors for imaging applications Type Journal Article
Year 1999 Publication Supercond. Sci. Technol. Abbreviated Journal Supercond. Sci. Technol.
Volume 12 Issue 11 Pages 755-758
Keywords NbN SSPD, SNSPD
Abstract We report an effective quantum efficiency of 340, responsivity >200 A W-1 (>104 V W-1) and response time of 27±5 ps at temperatures close to the superconducting transition for NbN superconducting hot-electron photodetectors (HEPs) in the near-infrared and optical ranges. Our studies were performed on a few nm thick NbN films deposited on sapphire substrates and patterned into µm-size multibridge detector structures, incorporated into a coplanar transmission line. The time-resolved photoresponse was studied by means of subpicosecond electro-optic sampling with 100 fs wide laser pulses. The quantum efficiency and responsivity studies of our photodetectors were conducted using an amplitude-modulated infrared beam, fibre-optically coupled to the device. The observed picosecond response time and the very high efficiency and sensitivity of the NbN HEPs make them an excellent choice for infrared imaging photodetectors and input optical-to-electrical transducers for superconducting digital circuits.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0953-2048 ISBN Medium
Area Expedition Conference (up)
Notes Approved no
Call Number Serial 1562
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Author Il'in, K. S.; Currie, M.; Lindgren, M.; Milostnaya, I. I.; Verevkin, A. A.; Gol'tsman, G. N.; Sobolewski, R.
Title Quantum efficiency and time-domain response of superconducting NbN hot-electron photodetectors Type Journal Article
Year 1999 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 9 Issue 2 Pages 3338-3341
Keywords NbN SSPD, SNSPD
Abstract We report our studies on the response of ultrathin superconducting NbN hot-electron photodetectors. We have measured the photoresponse of few-nm-thick, micron-size structures, which consisted of single and multiple microbridges, to radiation from the continuous-wave semiconductor laser and the femtosecond Ti:sapphire laser with the wavelength of 790 nm and 400 nm, respectively. The maximum responsivity was observed near the film's superconducting transition with the device optimally current-biased in the resistive state. The responsivity of the detector, normalized to its illuminated area and the coupling factor, was 220 A/W(3/spl times/10/sup 4/ V/W), which corresponded to a quantum efficiency of 340. The responsivity was wavelength independent from the far infrared to the ultraviolet range, and was at least two orders of magnitude higher than comparable semiconductor optical detectors. The time constant of the photoresponse signal was 45 ps, when was measured at 2.15 K in the resistive (switched) state using a cryogenic electro-optical sampling technique with subpicosecond resolution. The obtained results agree very well with our calculations performed using a two-temperature model of the electron heating in thin superconducting films.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference (up)
Notes Approved no
Call Number Serial 1566
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Author Il'in, K. S.; Gol'tsman, G. N.; Voronov, B. M.; Sobolewski, Roman
Title Characterization of the electron energy relaxation process in NbN hot-electron devices Type Conference Article
Year 1999 Publication Proc. 10th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 10th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 390-397
Keywords HEB mixers, SSPD, SNSPD, NbN films, Nb films
Abstract We report on transient measurements of electron energy relaxation in NbN films with 300-fs time resolution. Using an electro-optic sampling technique, we have studied the photoresponse of 3.5-nm-thick NbN films deposited on sapphire substrates and exposed to 100-fs-wide optical pulses. Our experimental data analysis was based on the two-temperature model and has shown that in our films at the superconducting transition 10.5 K the inelastic electron-phonon scattering time was about (111}+-__.2) ps. This response time indicated that the maximum intermediate-frequency band of a NbN hot-electron phonon-cooled mixer should reach (16+41-3) GHz if one eliminates the bolometric phonon-heating effect. We have suggested several ways to increase the effectiveness of phonon cooling to achieve the above intrinsic value of the NbN mixer bandwidth.
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Notes Approved no
Call Number Serial 1576
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