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Iomdina, E. N.; Seliverstov, S.; Sianosyan, A.; Teplyakova, K.; Rusova, A.; Goltsman, G. |
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Title |
The prospects of using the radiation for the assessment of corneal and scleral hydration |
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Abstract |
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Year |
2016 |
Publication |
Acta Ophthalmol. |
Abbreviated Journal |
Acta Ophthalmol. |
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94 |
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Keywords |
BWO, avalanche transit‐time diode, medicine, biology |
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Abstract |
Purpose
An adequate water balance (hydration extent) is one of the basic factors of normal eye function, including its external shells – the cornea and the sclera. THz systems creating images in reflected beams are likely to become ideal instruments of noninvasive testing of corneal and scleral hydration degree as THz radiation is highly sensitive to water content. The paper aims at studying the transmittance and reflectance spectra of the cornea and the sclera of rabbit and human eyes, as well as those of the whole rabbit eye, in the frequency range of 0.13–0.32 THz.
Methods
The experiments were carried out on 3 corneas and 3 rabbit scleras, 2 whole rabbit eyes, and 3 human healthy adult scleras using a specially developed THz system based on reliable and easy‐to‐use continuous wave sources: a backward‐wave oscillator and an avalanche transit‐time diode.
Results
The transmittance spectra of the cornea and the sclera and the dependence of the reflection coefficient of these tissues in THz range on water percentage content were determined. Comparison of the rabbit cornea hydrated from 73.2% to 76.3% concentration by mass demonstrated an approximately linear relationship between THz reflectivity and water concentration. The decrease of free water concentration by 1% leads to a drop of the reflectance coefficient by 13%. The parameters studied displayed noticeable differences between the sclera and the cornea of rabbits and between rabbit sclera and human sclera.
Conclusions
Preliminary results demonstrate that the proposed technique, based on continuous THz radiation, may be used to create a device for noninvasive testing of corneal and scleral hydration, which has good potential of wide‐scale practical application.
The work was supported by the Russian Foundation of Basic Research (grant No.15‐29‐03843) |
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1755375X |
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1333 |
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Mehdi, I.; Gol'tsman, G.; Putz, P. |
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Title |
Introduction to the mini-special-issue on the 25th international symposium on space terahertz technology (ISSTT) |
Type |
Miscellaneous |
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Year |
2015 |
Publication |
IEEE Trans. THz Sci. Technol. |
Abbreviated Journal |
IEEE Trans. THz Sci. Technol. |
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Volume |
5 |
Issue |
1 |
Pages |
14-15 |
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THE 25th International Symposium on Space Terahertz Technology (ISSTT) was held in Moscow, Russia, between April 27–30, 2014. The conference was organized by Moscow State Pedagogical University and the Higher School of Economics (National Research University) and Chaired by Professor Gregory Gol'tsman of Moscow State Pedagogical University. The conference was attended by roughly 150 participants from 15 countries. The technology covered by ISSTT includes detectors, devices, circuits and systems in various areas of THz science and technology. Each year this symposium brings together the global THz space science technology community, and as such, emphasizes the broad international collaboration that is required to execute these large complicated instrument programs that dominate this field. However, talks covering technologies for balloon, aircraft, and ground-based telescopes were also presented.
In this special section of IEEE Transactions on Terahertz Science and Technology, we include eight expanded papers from the 25th ISSTT symposium. The papers range from development of SIS mixers to optical adjustment systems for radio telescopes. The 26th ISSTT will be held in Boston, MA, USA, during March 16–18, 2015. Researchers and scientist involved in THz research are invited to attend this symposium (more details are at http://www.cfa.harvard.edu/events/2015/isstt2015/).
You can access the full list of papers presented at the ISSTT symposia from the National Radio Astronomy Observatory website: http://www.nrao.edu/meetings/isstt/index.shtml
Yours sincerely |
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2156-342X |
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1353 |
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Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Schubert, J.; Hubers, H.-W.; Schwaab, G.; Gol’tsman, G.; Gershenzon, E. |
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Title |
Performance of NbN phonon-cooled hot-electron bolometric mixer at Terahertz frequencies |
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Conference Article |
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Year |
1998 |
Publication |
Proc. 6-th Int. Conf. Terahertz Electron. |
Abbreviated Journal |
Proc. 6-th Int. Conf. Terahertz Electron. |
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149-152 |
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Keywords |
NbN HEB mixers |
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The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The results of the DSB noire temperature are: 1300 K at 650 GHz, 4700 K at 2.5 TBz and 10000 K at 3.12 THz. The RF bandwidth of the receiver is at least 2.5 THz. The amount of LO power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain is measured to be -9 dB, the total conversion gain -14 dB. |
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IEEE Sixth International Conference on Terahertz Electronics Proceedings. THZ 98. (Cat. No.98EX171) |
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1582 |
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Blundell, R.; Kawamura, J. H.; Tong, C. E.; Papa, D. C.; Hunter, T. R.; Gol’tsman, G. N.; Cherednichenko, S. I.; Voronov, B. M.; Gershenzon, E. M. |
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Title |
A hot-electron bolometer mixer receiver for the 680-830 GHz frequency range |
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Conference Article |
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1998 |
Publication |
Proc. 6-th Int. Conf. Terahertz Electron. |
Abbreviated Journal |
Proc. 6-th Int. Conf. Terahertz Electron. |
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18-20 |
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NbN HEB mixers |
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We describe a heterodyne receiver designed to operate in the partially transparent atmospheric windows centered on 680 and 830 GHz. The receiver incorporates a niobium nitride thin film, cooled to 4.2 K, as the phonon-cooled hot-electron mixer element. The double sideband receiver noise, measured over the frequency range 680-830 GHz, is typically 700-1300 K. The instantaneous output bandwidth of the receiver is 600 MHz. This receiver has recently been used at the SubMillimeter Telescope, jointly operated by the Steward Observatory and the Max Planck Institute for Radioastronomy, for observations of the neutral carbon and CO spectral lines at 810 GHz and at 806 and 691 GHz respectively. Laboratory measurements on a second mixer in the same test receiver have yielded extended high frequency performance to 1 THz. |
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Leeds, UK |
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IEEE |
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0-7803-4903-2 |
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IEEE Sixth International Conference on Terahertz Electronics Proceedings. THZ 98. (Cat. No.98EX171) |
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no |
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1581 |
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Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. |
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Title |
Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver |
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Conference Article |
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Year |
2017 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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27 |
Issue |
4 |
Pages |
6 |
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Keywords |
Multi-pixel, HEB, silicon-on-insulator, horn array |
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We report on the development of a multi-pixel
Hot Electron Bolometer (HEB) receiver fabricated using
silicon membrane technology. The receiver comprises a
2 × 2 array of four HEB mixers, fabricated on a single
chip. The HEB mixer chip is based on a superconducting
NbN thin film deposited on top of the silicon-on-insulator
(SOI) substrate. The thicknesses of the device layer and
handling layer of the SOI substrate are 20 μm and 300 μm
respectively. The thickness of the device layer is chosen
such that it corresponds to a quarter-wave in silicon at
1.35 THz. The HEB mixer is integrated with a bow-tie
antenna structure, in turn designed for coupling to a
circular waveguide, |
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RPLAB @ kovalyuk @ |
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1111 |
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Author |
Korneeva, Yuliya; Florya, Irina; Vdovichev, Sergey; Moshkova, Mariya; Simonov, Nikita; Kaurova, Natalia; Korneev, Alexander; Goltsman, Gregory |
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Comparison of hot-spot formation in NbN and MoN thin superconducting films after photon absorption |
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Conference Article |
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2017 |
Publication |
IEEE Transactions on Applied Superconductivity |
Abbreviated Journal |
IEEE Transactions on Applied Superconductiv |
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27 |
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4 |
Pages |
5 |
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Thin film devices, Superconducitng photoncounting devices, Nanowire single-photon detectors |
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Abstract |
In superconducting single-photon detectors SSPD
the efficiency of local suppression of superconductivity and hotspot
formation is controlled by diffusivity and electron-phonon
interaction time. Here we selected a material, 3.6-nm-thick MoNx
film, which features diffusivity close to those of NbN traditionally
used for SSPD fabrication, but with electron-phonon interaction
time an order of magnitude larger. In MoNx detectors we study
the dependence of detection efficiency on bias current, photon
energy, and strip width and compare it with NbN SSPD. We
observe non-linear current-energy dependence in MoNx SSPD
and more pronounced plateaus in dependences of detection
efficiency on bias current which we attribute to longer electronphonon
interaction time. |
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RPLAB @ kovalyuk @ |
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1114 |
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Bakhvalova, T.; Belkin, M. E.; Kovalyuk, V. V.; Prokhodtcov, A. I.; Goltsman, G. N.; Sigov, A. S. |
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Studying key principles for design and fabrication of silicon photonic-based beamforming networks |
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Conference Article |
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2019 |
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PIERS-Spring |
Abbreviated Journal |
PIERS-Spring |
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745-751 |
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silicon photonics, TriPleX platform |
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In the paper, we address key principles for computer-aided design and fabrication of silicon-photonics-based optical beamforming network selecting the optimal approach by simulation and experimental results. To clarify the consideration, the study is conducted on the example of a widely used binary switchable silicon-nitride optical beamforming network based on TriPleX platform. Comparison of simulation results and experimental studies of the prototype shows that the relative error due to technological imperfections does not exceed 3%. According to the estimation, such an error introduces insignificant distortion in the radiation pattern of the referred antenna array. |
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9017646 |
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1186 |
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Tong, C.-Y. E.; Meledin, D.; Loudkov, D.; Blundell, R.; Erickson, N.; Kawamura, J.; Mehdi, I.; Gol’tsman, G. |
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Title |
A 1.5 THz Hot-Electron Bolometer mixer operated by a planar diode based local oscillator |
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Conference Article |
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Year |
2003 |
Publication |
IEEE MTT-S Int. Microwave Symp. Digest |
Abbreviated Journal |
IEEE MTT-S Int. Microwave Symp. Digest |
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2 |
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751-754 |
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waveguide NbN HEB mixers |
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We have developed a 1.5 THz superconducting NbN Hot-Electron Bolometer mixer. It is operated by an all-solid-state Local Oscillator comprising of a cascade of 4 planar doublers following an MMIC based W-band power amplifier. The threshold available pump power is estimated to be 1 /spl mu/W. |
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Philadelphia, PA, USA |
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1516 |
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Antipov, S. V.; Vachtomin, Yu. B.; Maslennikov, S. N.; Smirnov, K. V.; Kaurova, N. S.; Grishina, E. V.; Voronov, B. M.; Goltsman, G. N. |
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Title |
Noise performance of quasioptical ultrathin NbN hot electron bolometer mixer at 2.5 and 3.8 THz |
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Conference Article |
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2004 |
Publication |
Proc. 5-th MSMW |
Abbreviated Journal |
Proc. 5-th MSMW |
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2 |
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592-594 |
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Keywords |
NbN HEB mixers |
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To put space-based and airborne heterodyne instruments into operation at frequencies above 1 THz the superconducting NbN hot-electron bolometer (HEB) will be incorporated into heterodyne receiver as a mixer. At frequencies above 1.3 THz the sensitivity of the NbN HEB mixers outperform the one of the Schottky diodes and SIS-mixers, and the receiver noise temperature of the NbN HEB mixers increase with frequency. In this paper we present the results of the noise temperature measurements within one batch of NbN HEB mixers based on 3.5 mn thick superconducting NbN film grown on Si substrate with MgO buffer layer at the LO frequencies 2.5 THz and 3.8 THz. |
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Kharkov, Ukraine |
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Kharkov, Ukraine |
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The Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves (IEEE Cat. No.04EX828) |
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351 |
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Maslennikov, S. N.; Morozov, D. V.; Ozhegov, R. V.; Smirnov, K. V.; Okunev, O. V.; Gol’tsman, G. N. |
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Title |
Imaging system for submillimeter wave range based on AlGaAs/GaAs hot electron bolometer mixers |
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Conference Article |
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2004 |
Publication |
Proc. 5-th MSMW |
Abbreviated Journal |
Proc. 5-th MSMW |
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2 |
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558-560 |
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AlGaAs/GaAs HEB mixers |
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Abstract |
Electromagnetic radiation of the submillimeter (SMM) range is dispersed and absorbed significantly less than infrared (IR) radiation when passing through different objects. That is the reason for the development of an SMM imaging system. In this paper, we discuss the design of an SMM heterodyne imager, based on a matrix of AlGaAs/GaAs heterostructure hot electron bolometer mixers (HEB) with relatively high (about 77 K) operating temperature. The predicted double side band (DSB) noise temperature is about 1000 K and optimal local oscillator (LO) power is about 1 /spl mu/W for such mixers, which seems to be quite prospective for an SMM heterodyne imager. |
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Kharkov, Ukraine |
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The Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves (IEEE Cat. No.04EX828) |
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1487 |
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