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Beebe, M. R.; Beringer, D. B.; Burton, M. C.; Yang, K.; Lukaszew, R. A. |
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Title |
Stoichiometry and thickness dependence of superconducting properties of niobium nitride thin films |
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Journal Article |
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Year |
2016 |
Publication |
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films |
Abbreviated Journal |
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films |
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34 |
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2 |
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021510 (1 to 4) |
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Keywords |
potential plagiarism, possible plagiarism, NbN films |
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Abstract |
The current technology used in linear particle accelerators is based on superconducting radio frequency (SRF) cavities fabricated from bulk niobium (Nb), which have smaller surface resistance and therefore dissipate less energy than traditional nonsuperconducting copper cavities. Using bulk Nb for the cavities has several advantages, which are discussed elsewhere; however, such SRF cavities have a material-dependent accelerating gradient limit. In order to overcome this fundamental limit, a multilayered coating has been proposed using layers of insulating and superconducting material applied to the interior surface of the cavity. The key to this multilayered model is to use superconducting thin films to exploit the potential field enhancement when these films are thinner than their London penetration depth. Such field enhancement has been demonstrated in MgB2 thin films; here, the authors consider films of another type-II superconductor, niobium nitride (NbN). The authors present their work correlating stoichiometry and superconducting properties in NbN thin films and discuss the thickness dependence of their superconducting properties, which is important for their potential use in the proposed multilayer structure. While there are some previous studies on the relationship between stoichiometry and critical temperature TC, the authors are the first to report on the correlation between stoichiometry and the lower critical field HC1. |
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0734-2101 |
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Potential plagiarism for 1503 |
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1504 |
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Somani, S.; Kasapi, S.; Wilsher, K.; Lo, W.; Sobolewski, R.; Gol’tsman, G. |
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Title |
New photon detector for device analysis: Superconducting single-photon detector based on a hot electron effect |
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Journal Article |
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Year |
2001 |
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J. Vac. Sci. Technol. B |
Abbreviated Journal |
J. Vac. Sci. Technol. B |
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19 |
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6 |
Pages |
2766-2769 |
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Keywords |
NbN SSPD, SNSPD |
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Abstract |
A novel superconducting single-photon detector (SSPD), intrinsically capable of high quantum efficiency (up to 20%) over a wide spectral range (ultraviolet to infrared), with low dark counts (<1 cps), and fast (<40 ps) timing resolution, is described. This SSPD has been used to perform timing measurements on complementary metal–oxide–semiconductor integrated circuits (ICs) by detecting the infrared light emission from switching transistors. Measurements performed from the backside of a 0.13 μm geometry flip–chip IC are presented. Other potential applications for this detector are in telecommunications, quantum cryptography, biofluorescence, and chemical kinetics. |
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0734211X |
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1542 |
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Iomdina, E. N.; Seliverstov, S.; Sianosyan, A.; Teplyakova, K.; Rusova, A.; Goltsman, G. |
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The prospects of using the radiation for the assessment of corneal and scleral hydration |
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2016 |
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Acta Ophthalmol. |
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Acta Ophthalmol. |
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94 |
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BWO, avalanche transit‐time diode, medicine, biology |
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Purpose
An adequate water balance (hydration extent) is one of the basic factors of normal eye function, including its external shells – the cornea and the sclera. THz systems creating images in reflected beams are likely to become ideal instruments of noninvasive testing of corneal and scleral hydration degree as THz radiation is highly sensitive to water content. The paper aims at studying the transmittance and reflectance spectra of the cornea and the sclera of rabbit and human eyes, as well as those of the whole rabbit eye, in the frequency range of 0.13–0.32 THz.
Methods
The experiments were carried out on 3 corneas and 3 rabbit scleras, 2 whole rabbit eyes, and 3 human healthy adult scleras using a specially developed THz system based on reliable and easy‐to‐use continuous wave sources: a backward‐wave oscillator and an avalanche transit‐time diode.
Results
The transmittance spectra of the cornea and the sclera and the dependence of the reflection coefficient of these tissues in THz range on water percentage content were determined. Comparison of the rabbit cornea hydrated from 73.2% to 76.3% concentration by mass demonstrated an approximately linear relationship between THz reflectivity and water concentration. The decrease of free water concentration by 1% leads to a drop of the reflectance coefficient by 13%. The parameters studied displayed noticeable differences between the sclera and the cornea of rabbits and between rabbit sclera and human sclera.
Conclusions
Preliminary results demonstrate that the proposed technique, based on continuous THz radiation, may be used to create a device for noninvasive testing of corneal and scleral hydration, which has good potential of wide‐scale practical application.
The work was supported by the Russian Foundation of Basic Research (grant No.15‐29‐03843) |
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1755375X |
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1333 |
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Finkel, M.; Thierschmann, H.; Galatro, L.; Katan, A. J.; Thoen, D. J.; de Visser, P. J.; Spirito, M.; Klapwijk, T. M. |
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Title |
Performance of THz components based on microstrip PECVD SiNx technology |
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Journal Article |
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2017 |
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IEEE Trans. THz Sci. Technol. |
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IEEE Trans. THz Sci. Technol. |
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7 |
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6 |
Pages |
765-771 |
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transmission line measurements, power transmission lines, dielectrics, couplers, submillimeter wave circuits, coplanar waveguides, micromechanical devices |
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We present a performance analysis of passive THz components based on Microstrip transmission lines with a 2-μmthin plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNX) dielectric layer. A set of thru-reflect-line calibration structures is used for basic transmission line characterizations. We obtain losses of 9 dB/mm at 300 GHz. Branchline hybrid couplers are realized that exhibit 2.5-dB insertion loss, 1-dB amplitude imbalance, and -26-dB isolation, in agreement with simulations. We use the measured center frequency to determine the dielectric constant of the PECVD SiN x , which yields 5.9. We estimate the wafer-to-wafer variations to be of the order of 1%. Directional couplers are presented which exhibit -12-dB transmission to the coupled port and -26 dB to the isolated port. For transmission lines with 5-μm-thin silicon nitride (SiN x ), we observe losses below 4 dB/mm. The thin SiN x dielectric membrane makes the THz components compatible with scanning probe microscopy cantilevers allowing the application of this technology in on-chip circuits of a THz near-field microscope. |
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2156-342X |
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1294 |
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Klapwijk, T. M.; Semenov, A. V. |
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Title |
Engineering physics of superconducting hot-electron bolometer mixers |
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Journal Article |
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Year |
2017 |
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IEEE Trans. THz Sci. Technol. |
Abbreviated Journal |
IEEE Trans. THz Sci. Technol. |
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7 |
Issue |
6 |
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627-648 |
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Keywords |
HEB mixers |
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Superconducting hot-electron bolometers are presently the best performing mixing devices for the frequency range beyond 1.2 THz, where good-quality superconductor-insulator-superconductor devices do not exist. Their physical appearance is very simple: an antenna consisting of a normal metal, sometimes a normal-metal-superconductor bilayer, connected to a thin film of a narrow short superconductor with a high resistivity in the normal state. The device is brought into an optimal operating regime by applying a dc current and a certain amount of local-oscillator power. Despite this technological simplicity, its operation has found to be controlled by many different aspects of superconductivity, all occurring simultaneously. A core ingredient is the understanding that there are two sources of resistance in a superconductor: a charge-conversion resistance occurring at a normal-metal-superconductor interface and a resistance due to time-dependent changes of the superconducting phase. The latter is responsible for the actual mixing process in a nonuniform superconducting environment set up by the bias conditions and the geometry. The present understanding indicates that further improvement needs to be found in the use of other materials with a faster energy relaxation rate. Meanwhile, several empirical parameters have become physically meaningful indicators of the devices, which will facilitate the technological developments. |
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2156-342X |
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1292 |
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