| |
Author |
Title |
Year |
Publication |
Volume |
Pages |
Links |
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Riger, E. R. |
Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium |
1986 |
Sov. Phys. JETP |
64 |
889-897 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
Observation of the free-exciton spectrum at submillimeter wavelengths |
1972 |
JETP Lett. |
16 |
161-162 |
|
|
|
Gershenson, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Kagane, M. L.; Multanovskii, V. V.; Ptitsina, N. G. |
Use of submillimeter backward-wave tube spectroscopy in determination of the chemical nature and concentration of residual impurities in pure semiconductors |
1983 |
Sov. Phys. Semicond. |
17 |
908-913 |
|
|
|
Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
Kinetics of submillimeter impurity and exciton photoconduction in Ge |
1982 |
Optics and Spectroscopy |
52 |
454-455 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
Cross section for binding of free carriers into excitons in germanium |
1981 |
JETP Lett. |
33 |
574 |
|
