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Svechnikov, S. I., Finkel, M. I., Maslennikov, S. N., Vachtomin, Y. B., Smirnov, K. V., Seleznev, V. A., et al. (2006). Superconducting hot electron bolometer mixer for middle IR range. In Proc. 16th Int. Crimean Microwave and Telecommunication Technology (Vol. 2, pp. 686–687).
Abstract: The developed directly lens coupled hot electron bolometer (HEB) mixer was based on 5 nm superconducting NbN deposited on GaAs substrate. The layout of the structure, including 30x20 mcm^2 active area coupled with a 50 Ohm coplanar line, was patterned by photolithography. The responsivity of the mixer was measured in a direct detection mode in the 25-64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 mum wavelength CW CO2 laser was utilized as a local oscillator.
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Gayduchenko, I., Fedorov, G., Titova, N., Moskotin, M., Obraztsova, E., Rybin, M., et al. (2018). Towards to the development of THz detectors based on carbon nanostructures. In J. Phys.: Conf. Ser. (Vol. 1092, 012039 (1 to 4)).
Abstract: Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of detectors with sensor elements based on CVD graphene as well as its derivatives – carbon nanotubes (CNTs). The devices are made in configuration of field effect transistors (FET) with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes. We show that at 300K semiconducting CNTs show better performance up to 300GHz with responsivity up to 100V/W, while quasi-metallic CNTs are shown to operate up to 2.5THz. At 300 K graphene detector exhibit the room-temperature responsivity from R = 15 V/W at f = 129 GHz to R = 3 V/W at f = 450 GHz. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation.
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Anfertev, V., Vaks, V., Revin, L., Pentin, I., Tretyakov, I., Goltsman, G., et al. (2017). High resolution THz gas spectrometer based on semiconductor and superconductor devices. In EPJ Web Conf. (Vol. 132, 02001 (1 to 2)).
Abstract: The high resolution THz gas spectrometer consists of a synthesizer based on Gunn generator with a semiconductor superlattice frequency multiplier as a radiation source, and an NbN hot electron bolometer in a direct detection mode as a THz radiation receiver was presented. The possibility of application of a quantum cascade laser as a local oscillator for a heterodyne receiver which is based on an NbN hot electron bolometer mixer is shown. The ways for further developing of the THz spectroscopy were outlined.
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Seliverstov, S. V., Rusova, A. A., Kaurova, N. S., Voronov, B. M., & Goltsman, G. N. (2016). Attojoule energy resolution of direct detector based on hot electron bolometer. In J. Phys.: Conf. Ser. (Vol. 741, 012165 (1 to 5)). IOP Publishing.
Abstract: We characterize superconducting antenna-coupled NbN hot-electron bolometer (HEB) for direct detection of THz radiation operating at a temperature of 9.0 K. At signal frequency of 2.5 THz, the measured value of the optical noise equivalent power is 2.0×10-13 W-Hz-0.5. The estimated value of the energy resolution is about 1.5 aJ. This value was confirmed in the experiment with pulsed 1.55-μm laser employed as a radiation source. The directly measured detector energy resolution is 2 aJ. The obtained risetime of pulses from the detector is 130 ps. This value was determined by the properties of the RF line. These characteristics make our detector a device-of-choice for a number of practical applications associated with detection of short THz pulses.
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Shurakov, A., Tong, C. -yu E., Blundell, R., & Gol’tsman, G. (2014). A microwave pumped HEB direct detector using a homodyne readout scheme. In Proc. 25th Int. Symp. Space Terahertz Technol. (129).
Abstract: We report the results of our study on the noise performance of a fast THz detector based on the repurpose of hot electron bolometer mixer (HEB). Instead of operating with an elevated bath temperature, microwave power is injected into the HEB device, which enhances the sensitivity of the detector and at the same time provide a mechanism for reading out impedance changes of the device induced by the modulated incident THz radiation [1]. We have demonstrated an improvement of the detector’s optical noise equivalent power (NEP). Furthermore, by introducing a homodyne readout scheme based on a room temperature microwave mixer, the dynamic range of the detector is increased. The HEB devices used in this work were made of 4 nm thick NbN film. The detector chips were installed into a waveguide mixer block fitted with a corrugated horn, mounted on the cold plate of a liquid helium cryostat. The HEBs were operated at a bath temperature of 4.2 K. The signal beam was terminated on black bodies at ambient and liquid nitrogen temperatures. A chopper wheel placed in front of the cryostat window operating at a frequency of 1.48 kHz modulated the input load temperature of the detector. A cold mesh filter, centered at 830 GHz, was used to define the input signal power bandwidth. Microwave was injected through a broadband directional coupler inside the cryostat. Our experiments were mostly conducted at a pump frequency of 1.5 GHz. The reflected microwave power from the HEB device was fed into a cryogenic low noise amplifier (LNA). The output of the LNA was connected to the RF input port of a room temperature microwave mixer, which beat the reflected signal from the HEB using a copy of the original 1.5 GHz injection signal in a homodyne demodulation scheme. The amplitude of the detected power was measured by a lock-in amplifier, which was synchronized to the chopper frequency. Preliminary results yield an optical NEP of ~1 pW/ Hz 1/2 which corresponds to an improvement of a factor of 3 compared to [1], driven mainly by a lowering of the system noise floor. The dynamic range was also increased by similar amount. References 1. A. Shurakov et al. “A Microwave Pumped Hot Electron Bolometric Direct Detector,” submitted on Oct 18, 2013 to Appl. Phys. Let.
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Zhang, W., Miao, W., Li, S. L., Zhou, K. M., Shi, S. C., Gao, J. R., et al. (2013). Measurement of the spectral response of spiral-antenna coupled superconducting hot electron bolometers. IEEE Trans. Appl. Supercond., 23(3), 2300804.
Abstract: Measured spectral response of spiral-antenna coupled superconducting hot electron bolometers (HEBs) often drops dramatically at frequencies that are still within the frequency range of interest (e.g., ~ 5 THz). This is inconsistent with the implied low receiver noise temperatures from the same measurements. To understand this discrepancy, we exhaustively test and calibrate the thermal sources used in Fourier transform spectrometer measurements. We first investigate the absolute emission spectrum of high-pressure Hg arc lamp, then measure the spectral response of two spiral-antenna coupled NbN HEBs with a Martin-Puplett interferometer as spectrometer and 77 K blackbody as broadband signal source. The measured absolute emission spectrum of Hg arc lamp is proportional to frequency, corresponding to an equivalent blackbody temperature of 4000 K at 1 THz, 1500 K at 3 THz, and 800 K at 5 THz, respectively. Measured spectral response of spiral-antenna coupled NbN HEBs, corrected for air absorption, is nearly flat in the frequency range of 0.5-4 THz, consistent with simulated coupling efficiency between HEB and spiral-antenna. These results explain the discrepancy, and prove that spiral-antenna coupled superconducting NbN HEBs work well in a wide frequency range. In addition, this calibration method and these results are broadly applicable to other quasi-optical THz receivers.
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Sclafani, M., Marksteiner, M., Keir, F. M. L., Divochiy, A., Korneev, A., Semenov, A., et al. (2012). Sensitivity of a superconducting nanowire detector for single ions at low energy. Nanotechnol., 23(6), 065501 (1 to 5).
Abstract: We report on the characterization of a superconducting nanowire detector for ions at low kinetic energies. We measure the absolute single-particle detection efficiency eta and trace its increase with energy up to eta = 100%. We discuss the influence of noble gas adsorbates on the cryogenic surface and analyze their relevance for the detection of slow massive particles. We apply a recent model for the hot-spot formation to the incidence of atomic ions at energies between 0.2 and 1 keV. We suggest how the differences observed for photons and atoms or molecules can be related to the surface condition of the detector and we propose that the restoration of proper surface conditions may open a new avenue for SSPD-based optical spectroscopy on molecules and nanoparticles.
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Dauler, E. A., Kerman, A. J., Robinson, B. S., Yang, J. K. W., Voronov, B. M., Gol’tsman, G. N., et al. (2006). Achieving high counting rates in superconducting nanowire single-photon detectors. In CLEO/QELS (JTuD3 (1 to 2)). Optical Society of America.
Abstract: Kinetic inductance is determined to be the primary limitation to the counting rate of superconducting nanowire single-photon counters. Approaches for overcoming this limitation will be discussed.
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Zhang, J., Pearlman, A., Slysz, W., Verevkin, A., Sobolewski, R., Okunev, O., et al. (2003). Infrared picosecond superconducting single-photon detectors for CMOS circuit testing. In CLEO/QELS (Cmv4). Optical Society of America.
Abstract: Novel, NbN superconducting single-photon detectors have been developed for ultrafast, high quantum efficiency detection of single quanta of infrared radiation. Our devices have been successfully implemented in a commercial VLSI CMOS circuit testing system.
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Verevkin, A. A., Ptitsina, N. G., Smirnov, K. V., Gol'tsman, G. N., Voronov, B. M., Gershenzon, E. M., et al. (1997). Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure. In Proc. 4-th Int. Semicond. Device Research Symp. (pp. 163–166).
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Gerecht, E., Musante, C. F., Schuch, R., Lutz, C. R., Jr., Yngvesson, K. S., et al. (1995). Hot electron detection and mixing experiments in NbN at 119 micrometer wavelength. In Proc. 6th Int. Symp. Space Terahertz Technol. (pp. 284–293).
Abstract: We have performed preliminary experiments with the goal of demonstrating a Hot Electron Bolometric (HEB) mixer for a 119 micrometer wavelength (2.5 THz). We have chosen a NbN device of size 700 x 350 micrometers. This device can easily be coupled to a laser LO source, which is advantageous for performing a prototype experiment. The relatively large size of the device means that the LO power required is in the mW range; this power can be easily obtained from a THz laser source. We have measured the amount of laser power actually absorbed in the device, and from this have estimated the best optical coupling loss to be about 10 di . We are developing methods for improving the optical coupling further. Preliminary measurements of the response of the device to a chopped black-body have not yet resulted in a measured receiver noise temperature. We expect to be able to complete this measurement in the near future.
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Gol'tsman, G. N., Goghidze, I. G., Kouminov, P. B., Karasik, B. S., Semenov, A. D., & Gershenzon, E. M. (1994). Influence of grain boundary weak links on the nonequilibrium response of YBaCuO thin films to short laser pulses. J. Supercond., 7(4), 751–755.
Abstract: The transient voltage response in both epitaxial and granular YBaCuO thin films to 80 ps pulses of YAG∶Nd laser radiation of wavelength 0.63 and 1.54 μm was studied. In the normal and resistive states both types of films demonstrate two components: a nonequilibrium picosecond component and a bolometric nanosecond one. The normalized amplitudes are almost the same for all films. In the superconducting state we observed a kinetic inductive response and two-component shape after integration. The normalized amplitude of the response in granular films is up to five orders of magnitude larger than in epitaxial films. We interpret the nonequilibrium response in terms of a suppression of the order parameter by the excess of quasiparticles followed by the change of resistance in the normal and resistive states or kinetic inductance in the superconducting state. The sharp rise of inductive response in granular films is explained both by a diminishing of the cross section for current percolation through the disordered network of Josephson weak links and by a decrease of condensate density in neighboring regions.
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Danerud, M., Winkler, D., Lindgren, M., Zorin, M., Trifonov, V., Karasik, B. S., et al. (1994). Nonequilibrium and bolometric photoresponse in patterned YBa2Cu3O7−δ thin films. J. Appl. Phys., 76(3), 1902–1909.
Abstract: Epitaxial laser deposited YBa2Cu3O7−δ films of ∼50 nm thickness were patterned into detectors consisting of ten parallel 1 μm wide strips in order to study nonequilibrium and bolometric effects. Typically, the patterned samples had critical temperatures around 86 K, transition widths around 2 K and critical current densities above 1×106A/cm2 at 77 K. Pulsed laser measurements at 0.8 μm wavelength (17 ps full width at half maximum) showed a ∼30 ps response, attributed to electron heating, followed by a slower bolometric decay. Amplitude modulation in the band fmod=100 kHz–10 GHz of a laser with wavelength λ=0.8 μm showed two different thermal relaxations in the photoresponse. Phonon escape from the film (∼3 ns) is the limiting process, followed by heat diffusion in the substrate. Similar relaxations were also seen for λ=10.6 μm. The photoresponse measurements were made with the film in the resistive state and extended into the normal state. These states were created by supercritical bias currents. Measurements between 75 and 95 K (i.e., from below to above Tc) showed that the photoresponse was proportional to dR/dT for fmod=1 MHz and 4 GHz. The fast response is limited by the electron‐phonon scattering time, estimated to 1.8 ps from experimental data. The responsivity both at 0.8 and 10.6 μm wavelength was ∼1.2 V/W at fmod=1 GHz and the noise equivalent power was calculated to 1.5×10−9 WHz−1/2 for the fast response.
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Danerud, M., Winkler, D., Lindgren, M., Zorin, M., Trifonov, V., Karasik, B., et al. (1994). A fast infrared detector based on patterned YBCO thin film. Supercond. Sci. Technol., 7(5), 321–323.
Abstract: Detectors for infrared radiation ( lambda =0.85 mu m) were made of 50 nm thick YBa2Cu3O7- delta films on LaAlO3 and MgO or 60 nm thick films on NdGaO3. Parallel strips (1 mu m wide by 20 mu m long) were patterned in the films and formed the active device. These devices were designed to detect short infrared laser pulses by electron heating. The detectors were current biased into the resistive and the normal states. The response was studied in direct pulse measurements as well as by amplitude modulation of a laser. The pulse measurements showed a fast picosecond response followed by a slower decay related to phonon escape through the film-substrate interface and heat diffusion in the substrate. The frequency spectra up to 10 GHz showed two slopes with a knee corresponding to the phonon escape time.
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Semenov, A. D., Goghidze, I. G., Gol’tsman, G. N., Sergeev, A. V., & Gershenzon, E. M. (1993). Evidence for the spectral dependence of nonequilibrium picosecond photoresponse of YBaCuO thin films. Appl. Phys. Lett., 63(5), 681–683.
Abstract: The transient voltage photoresponse of current biased YBaCuO thin films to 20 ps laser pulses of 0.63 and 1.54 μm wavelengths is measured for temperatures around the superconducting transition region. The fast picosecond decay of the response is followed by a slow nanosecond relaxation which is associated with the bolometric effect. The magnitude of the fast component of the response varies in proportion to the square root of wavelength that plausibly reflects multiplication processes of photoexcited electrons via electron–electron scattering and interaction with high energy phonons.
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