| Records |
| Author |
Jiang, Ling; Miao, Wei; Zhang, Wen; Li, Ning; Lin, Zhen Hui; Yao, Qi Jun; Shi, Sheng-Cai; Svechnikov, S. I.; Vakhtomin, Y. B.; Antipov, S. V.; Voronov, B. M.; Kaurova, N. S.; Gol'tsman, G. N. |
| Title |
Characterization of a quasi-optical NbN superconducting HEB mixer |
Type |
Journal Article |
| Year |
2006 |
Publication |
IEEE Trans. Microwave Theory Techn. |
Abbreviated Journal |
IEEE Trans. Microwave Theory Techn. |
| Volume |
54 |
Issue |
7 |
Pages  |
2944-2948 |
| Keywords |
NbN HEB mixers |
| Abstract |
In this paper, the performance of a quasi-optical NbN superconducting hot-electron bolometer (HEB) mixer, cryogenically cooled by a close-cycled 4-K refrigerator, is thoroughly investigated at 300, 500, and 850 GHz. The lowest receiver noise temperatures measured at the respective three frequencies are 1400, 900, and 1350 K, which can go down to 659, 413, and 529 K, respectively, after correcting the loss and associated noise contribution of the quasi-optical system before the measured superconducting HEB mixer. The stability of the quasi-optical superconducting HEB mixer is also investigated here. The Allan variance time measured with a local oscillator pumping at 500 GHz and an IF bandwidth of 110 MHz is 1.5 s at the dc-bias voltage exhibiting the lowest noise temperature and increases to 2.5 s at a dc bias twice that voltage. |
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| ISSN |
0018-9480 |
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no |
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1448 |
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| Author |
Elmanov, I.; Elmanova, A.; Komrakova, S.; Golikov, A.; Kaurova, N.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. |
| Title |
Method for determination of resists parameters for photonic – integrated circuits e-beam lithography on silicon nitride platform |
Type |
Conference Article |
| Year |
2019 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
| Volume |
220 |
Issue |
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Pages |
03012 |
| Keywords |
e-beam lithography, Si3N4 |
| Abstract |
In the work the thicknesses of the e-beam resists ZEP 520A and ma-N 2400 by using non-destructive method were measured, as well as recipe for the high ratio between the Si3N4 and the resists etching rate was determined. The work has a practical application for e-beam lithography of photonic-integrated circuits and nanophotonics devices based on silicon nitride platform. |
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| ISSN |
2100-014X |
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no |
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Serial |
1189 |
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| Author |
Kovalyuk, V.; Ferrari, S.; Kahl, O.; Semenov, A.; Shcherbatenko, M.; Lobanov, Y.; Ozhegov, R.; Korneev, A.; Kaurova, N.; Voronov, B.; Pernice, W.; Gol'tsman, G. |
| Title |
On-chip coherent detection with quantum limited sensitivity |
Type |
Journal Article |
| Year |
2017 |
Publication |
Sci Rep |
Abbreviated Journal |
Sci Rep |
| Volume |
7 |
Issue |
1 |
Pages |
4812 |
| Keywords |
waveguide, SSPD, SNSPD |
| Abstract |
While single photon detectors provide superior intensity sensitivity, spectral resolution is usually lost after the detection event. Yet for applications in low signal infrared spectroscopy recovering information about the photon's frequency contributions is essential. Here we use highly efficient waveguide integrated superconducting single-photon detectors for on-chip coherent detection. In a single nanophotonic device, we demonstrate both single-photon counting with up to 86% on-chip detection efficiency, as well as heterodyne coherent detection with spectral resolution f/f exceeding 10(11). By mixing a local oscillator with the single photon signal field, we observe frequency modulation at the intermediate frequency with ultra-low local oscillator power in the femto-Watt range. By optimizing the nanowire geometry and the working parameters of the detection scheme, we reach quantum-limited sensitivity. Our approach enables to realize matrix integrated heterodyne nanophotonic devices in the C-band wavelength range, for classical and quantum optics applications where single-photon counting as well as high spectral resolution are required simultaneously. |
| Address |
National Research University Higher School of Economics, Moscow, 101000, Russia. ggoltsman@hse.ru |
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2045-2322 |
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PMID:28684752; PMCID:PMC5500578 |
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no |
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RPLAB @ kovalyuk @ |
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1129 |
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| Author |
Tretyakov, I.; Kaurova, N.; Raybchun, S.; Goltsman, G. N.; Silaev, A. A. |
| Title |
Technology for NbN HEB based multipixel matrix of THz range |
Type |
Conference Article |
| Year |
2018 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
| Volume |
195 |
Issue |
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Pages |
05011 |
| Keywords |
NbN HEB |
| Abstract |
The influence of homogeneity disorder degree of the thin superconducting NbN film across of Si wafer on characteristics of the Hot Electron Bolometers (HEB) has been investigated. Our experiments have been carried out near the superconducting transition and far below it. The high homogeneity disorder degree of the NbN film has been achieved by preparing the Si substrate surface. The fabricated HEBs all have almost identical R (T) characteristics with a dispersion of Tc and the normal resistance R300 of not more than 0.15K and 2 Ω, respectively. The quality of the devises allows us to demonstrate clearly the influence of non-equilibrium processes in the S’SS’ system on the device performance. Our fabrication technology also allows creating multiplex heterodyne and direct detector matrices based the HEB devices. |
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2100-014X |
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no |
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1318 |
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Matyushkin, Y.; Danilov, S.; Moskotin, M.; Belosevich, V.; Kaurova, N.; Rybin, M.; Obraztsova, E. D.; Fedorov, G.; Gorbenko, I.; Kachorovskii, V.; Ganichev, S. |
| Title |
Helicity-sensitive plasmonic terahertz interferometer |
Type |
Journal Article |
| Year |
2020 |
Publication |
Nano Lett. |
Abbreviated Journal |
Nano Lett. |
| Volume |
20 |
Issue |
10 |
Pages |
7296-7303 |
| Keywords |
graphene, plasmonic interferometer, radiation helicity, terahertz radiation |
| Abstract |
Plasmonic interferometry is a rapidly growing area of research with a huge potential for applications in the terahertz frequency range. In this Letter, we explore a plasmonic interferometer based on graphene field effect transistor connected to specially designed antennas. As a key result, we observe helicity- and phase-sensitive conversion of circularly polarized radiation into dc photovoltage caused by the plasmon-interference mechanism: two plasma waves, excited at the source and drain part of the transistor, interfere inside the channel. The helicity-sensitive phase shift between these waves is achieved by using an asymmetric antenna configuration. The dc signal changes sign with inversion of the helicity. A suggested plasmonic interferometer is capable of measuring the phase difference between two arbitrary phase-shifted optical signals. The observed effect opens a wide avenue for phase-sensitive probing of plasma wave excitations in two-dimensional materials. |
| Address |
CENTERA Laboratories, Institute of High Pressure Physics, PAS, 01-142 Warsaw, Poland |
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1530-6984 |
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PMID:32903004 |
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no |
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1781 |
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| Author |
Shurakov, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Zilberley, T.; Prikhodko, A.; Voronov, B.; Vasil’evskii, I.; Goltsman, G. |
| Title |
Planar Schottky diode with a Γ-shaped anode suspended bridge |
Type |
Conference Article |
| Year |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
1695 |
Issue |
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Pages |
012154 |
| Keywords |
Schottky diode, GaAs, InP substrate |
| Abstract |
In this paper we report on the fabrication of a planar Schottky diode utilizing a Г-shaped anode suspended bridge. The bridge maintains transition between the top and bottom level planes of a 1.4 µm thick GaAs mesa. To implement the profile of a suspended bridge and inward tilt of a mesa wall adjacent to it, we make use of an anisotropic etching of gallium arsenide. The geometry proposed enables the fabrication of a diode with mesa of an arbitrary thickness to mitigate AC losses in the diode layered structure at terahertz frequencies of interest. For frequencies beyond 1 THz, it is also beneficial to use the geometry for the implementation of n-GaAs/n-InGaAs heterojunction Schottky diodes grown on InP substrate. |
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1742-6588 |
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no |
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1152 |
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Shurakov, A.; Prikhodko, A.; Mikhailov, D.; Belikov, I.; Kaurova, N.; Voronov, B.; Goltsman, G. |
| Title |
Efficiency of a microwave reflectometry for readout of a THz multipixel Schottky diode direct detector |
Type |
Conference Article |
| Year |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
1695 |
Issue |
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Pages |
012156 |
| Keywords |
Shottky diode, THz, direct detector, multipixel camera |
| Abstract |
In this paper we report on the results of investigation of efficiency of a microwave reflectometry for readout of a terahertz multipixel Schottky diode direct detector. Decent capabilities of the microwave reflectometry readout were earlier justified by us for a hot electron bolometric direct detector. In case of a planar Schottky diode, we observed increase of an optical noise equivalent power by a factor of 2 compared to that measured within a conventional readout scheme. For implementation of a multipixel camera, a microwave reflectometer is to be used to readout each row of the camera, and the row switching is to be maintained by a CMOS analog multiplexer. The diodes within a row have to be equipped with filters to distribute the probing microwave signal properly. The simultaneous use of analog multiplexing and microwave reflectometry enables to reduce the camera response time by a factor of its number of columns. |
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1742-6588 |
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no |
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1153 |
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| Author |
Seliverstov, S. V.; Rusova, A. A.; Kaurova, N. S.; Voronov, B. M.; Goltsman, G. N. |
| Title |
Attojoule energy resolution of direct detector based on hot electron bolometer |
Type |
Conference Article |
| Year |
2016 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
741 |
Issue |
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Pages |
012165 (1 to 5) |
| Keywords |
NbN HEB detector |
| Abstract |
We characterize superconducting antenna-coupled NbN hot-electron bolometer (HEB) for direct detection of THz radiation operating at a temperature of 9.0 K. At signal frequency of 2.5 THz, the measured value of the optical noise equivalent power is 2.0×10-13 W-Hz-0.5. The estimated value of the energy resolution is about 1.5 aJ. This value was confirmed in the experiment with pulsed 1.55-μm laser employed as a radiation source. The directly measured detector energy resolution is 2 aJ. The obtained risetime of pulses from the detector is 130 ps. This value was determined by the properties of the RF line. These characteristics make our detector a device-of-choice for a number of practical applications associated with detection of short THz pulses. |
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IOP Publishing |
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Seliverstov_2016 |
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1337 |
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Korneev, A.; Divochiy, A.; Tarkhov, M.; Minaeva, O.; Seleznev, V.; Kaurova, N.; Voronov, B.; Okunev, O.; Chulkova, G.; Milostnaya, I.; Smirnov, K.; Gol'tsman, G. |
| Title |
New advanced generation of superconducting NbN-nanowire single-photon detectors capable of photon number resolving |
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Conference Article |
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2008 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
97 |
Issue |
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Pages |
012307 (1 to 6) |
| Keywords |
PNR SSPD; SNSPD |
| Abstract |
We present our latest generation of ultrafast superconducting NbN single-photon detectors (SSPD) capable of photon-number resolving (PNR). We have developed, fabricated and tested a multi-sectional design of NbN nanowire structures. The novel SSPD structures consist of several meander sections connected in parallel, each having a resistor connected in series. The novel SSPDs combine 10 μm × 10 μm active areas with a low kinetic inductance and PNR capability. That resulted in a significantly reduced photoresponse pulse duration, allowing for GHz counting rates. The detector's response magnitude is directly proportional to the number of incident photons, which makes this feature easy to use. We present experimental data on the performances of the PNR SSPDs. The PNR SSPDs are perfectly suited for fibreless free-space telecommunications, as well as for ultrafast quantum cryptography and quantum computing. |
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1742-6596 |
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no |
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Serial |
1245 |
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| Author |
Kovalyuk, V.; Hartmann, W.; Kahl, O.; Kaurova, N.; Korneev, A.; Goltsman, G.; Pernice, W. H. P. |
| Title |
Absorption engineering of NbN nanowires deposited on silicon nitride nanophotonic circuits |
Type |
Journal Article |
| Year |
2013 |
Publication |
Opt. Express |
Abbreviated Journal |
Opt. Express |
| Volume |
21 |
Issue |
19 |
Pages |
22683-22692 |
| Keywords |
SSPD, SNSPD, NbN nanoeires, Si3N4 waveguides |
| Abstract |
We investigate the absorption properties of U-shaped niobium nitride (NbN) nanowires atop nanophotonic circuits. Nanowires as narrow as 20nm are realized in direct contact with Si3N4 waveguides and their absorption properties are extracted through balanced measurements. We perform a full characterization of the absorption coefficient in dependence of length, width and separation of the fabricated nanowires, as well as for waveguides with different cross-section and etch depth. Our results show excellent agreement with finite-element analysis simulations for all considered parameters. The experimental data thus allows for optimizing absorption properties of emerging single-photon detectors co-integrated with telecom wavelength optical circuits. |
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Edition |
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1094-4087 |
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PMID:24104155 |
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no |
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Serial |
1213 |
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