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Lipatov, A.; Okunev, O.; Smirnov, K.; Chulkova, G.; Korneev, A.; Kouminov, P.; Gol'tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, R. |
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Title |
An ultrafast NbN hot-electron single-photon detector for electronic applications |
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Journal Article |
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Year |
2002 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
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Volume |
15 |
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12 |
Pages |
1689-1692 |
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Keywords |
NbN SSPD, SNSPD, QE, jitter, dark counts |
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Abstract |
We present the latest generation of our superconducting single-photon detector (SPD), which can work from ultraviolet to mid-infrared optical radiation wavelengths. The detector combines a high speed of operation and low jitter with high quantum efficiency (QE) and very low dark count level. The technology enhancement allows us to produce ultrathin (3.5 nm thick) structures that demonstrate QE hundreds of times better, at 1.55 μm, than previous 10 nm thick SPDs. The best, 10 × 10 μm2, SPDs demonstrate QE up to 5% at 1.55 μm and up to 11% at 0.86 μm. The intrinsic detector QE, normalized to the film absorption coefficient, reaches 100% at bias currents above 0.9 Ic for photons with wavelengths shorter than 1.3 μm. |
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0953-2048 |
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1533 |
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Gol'tsman, G. N.; Korneev, A.; Rubtsova, I.; Milostnaya, I.; Chulkova, G.; Minaeva, O.; Smirnov, K.; Voronov, B.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R. |
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Title |
Ultrafast superconducting single-photon detectors for near-infrared-wavelength quantum communications |
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Journal Article |
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Year |
2005 |
Publication |
Phys. Stat. Sol. (C) |
Abbreviated Journal |
Phys. Stat. Sol. (C) |
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2 |
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5 |
Pages |
1480-1488 |
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Keywords |
NbN SSPD, SNSPD |
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We present our progress on the research and development of NbN superconducting single‐photon detectors (SSPD's) for ultrafast counting of near‐infrared photons for secure quantum communications. Our SSPD's operate in the quantum detection mode based on the photon‐induced hotspot formation and subsequent development of a transient resistive barrier across an ultrathin and submicron‐width superconducting stripe. The devices are fabricated from 4‐nm‐thick NbN films and kept in the 4.2‐ to 2‐K temperature range. The detector experimental quantum efficiency in the photon‐counting mode reaches above 40% for the visible light and up to 30% in the 1.3‐ to 1.55‐µm wavelength range with dark counts below 0.01 per second. The experimental real‐time counting rate is above 2 GHz and is limited by our readout electronics. The SSPD's timing jitter is below 18 ps, and the best‐measured value of the noise‐equivalent power (NEP) is 5 × 10–21 W/Hz1/2 at 1.3 µm. In terms of quantum efficiency, timing jitter, and maximum counting rate, our NbN SSPD's significantly outperform semiconductor avalanche photodiodes and photomultipliers in the 1.3‐ to 1.55‐µm range. |
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1610-1634 |
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1479 |
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Verevkin, A.; Pearlman, A.; Slysz, W.; Zhang, J.; Currie, M.; Korneev, A.; Chulkova, G.; Okunev, O.; Kouminov, P.; Smirnov, K.; Voronov, B.; Gol'tsman, G. N.; Sobolewski, R. |
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Ultrafast superconducting single-photon detectors for near-infrared-wavelength quantum communications |
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Journal Article |
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2004 |
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J. Modern Opt. |
Abbreviated Journal |
J. Modern Opt. |
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51 |
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9-10 |
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1447-1458 |
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NbN SSPD, SNSPD |
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The paper reports progress on the design and development of niobium-nitride, superconducting single-photon detectors (SSPDs) for ultrafast counting of near-infrared photons for secure quantum communications. The SSPDs operate in the quantum detection mode, based on photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-width superconducting stripe. The devices are fabricated from 3.5 nm thick NbN films and kept at cryogenic (liquid helium) temperatures inside a cryostat. The detector experimental quantum efficiency in the photon-counting mode reaches above 20% in the visible radiation range and up to 10% at the 1.3–1.55 μn infrared range. The dark counts are below 0.01 per second. The measured real-time counting rate is above 2 GHz and is limited by readout electronics (the intrinsic response time is below 30 ps). The SSPD jitter is below 18 ps, and the best-measured value of the noise-equivalent power (NEP) is 2 × 10−18 W/Hz1/2. at 1.3 μm. In terms of photon-counting efficiency and speed, these NbN SSPDs significantly outperform semiconductor avalanche photodiodes and photomultipliers. |
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0950-0340 |
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1488 |
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Milostnaya, I.; Korneev, A.; Rubtsova, I.; Seleznev, V.; Minaeva, O.; Chulkova, G.; Okunev, O.; Voronov, B.; Smirnov, K.; Gol'tsman, G.; Slysz, W.; Wegrzecki, M.; Guziewicz, M.; Bar, J.; Gorska, M.; Pearlman, A.; Kitaygorsky, J.; Cross, A.; Sobolewski, R. |
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Superconducting single-photon detectors designed for operation at 1.55-µm telecommunication wavelength |
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Conference Article |
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2006 |
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J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
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43 |
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1334-1337 |
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NbN SSPD, SNSPD |
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We report on our progress in development of superconducting single-photon detectors (SSPDs), specifically designed for secure high-speed quantum communications. The SSPDs consist of NbN-based meander nanostructures and operate at liquid helium temperatures. In general, our devices are capable of GHz-rate photon counting in a spectral range from visible light to mid-infrared. The device jitter is 18 ps and dark counts can reach negligibly small levels. The quantum efficiency (QE) of our best SSPDs for visible-light photons approaches a saturation level of ~30-40%, which is limited by the NbN film absorption. For the infrared range (1.55µm), QE is ~6% at 4.2 K, but it can be significantly improved by reduction of the operation temperature to the 2-K level, when QE reaches ~20% for 1.55-µm photons. In order to further enhance the SSPD efficiency at the wavelength of 1.55 µm, we have integrated our detectors with optical cavities, aiming to increase the effective interaction of the photon with the superconducting meander and, therefore, increase the QE. A successful effort was made to fabricate an advanced SSPD structure with an optical microcavity optimized for absorption of 1.55 µm photons. The design consisted of a quarter-wave dielectric layer, combined with a metallic mirror. Early tests performed on relatively low-QE devices integrated with microcavities, showed that the QE value at the resonator maximum (1.55-µm wavelength) was of the factor 3-to-4 higher than that for a nonresonant SSPD. Independently, we have successfully coupled our SSPDs to single-mode optical fibers. The completed receivers, inserted into a liquid-helium transport dewar, reached ~1% system QE for 1.55 µm photons. The SSPD receivers that are fiber-coupled and, simultaneously, integrated with resonators are expected to be the ultimate photon counters for optical quantum communications. |
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1742-6588 |
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1450 |
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Sobolewski, R.; Verevkin, A.; Gol'tsman, G.N.; Lipatov, A.; Wilsher, K. |
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Ultrafast superconducting single-photon optical detectors and their applications |
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Journal Article |
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2003 |
Publication |
IEEE Trans. Appl. Supercond. |
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13 |
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2 |
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1151-1157 |
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NbN SSPD, SNSPD |
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We present a new class of ultrafast single-photon detectors for counting both visible and infrared photons. The detection mechanism is based on photon-induced hotspot formation, which forces the supercurrent redistribution and leads to the appearance of a transient resistive barrier across an ultrathin, submicrometer-width, superconducting stripe. The devices were fabricated from 3.5-nm- and 10-nm-thick NbN films, patterned into <200-nm-wide stripes in the 4 /spl times/ 4-/spl mu/m/sup 2/ or 10 /spl times/ 10-/spl mu/m/sup 2/ meander-type geometry, and operated at 4.2 K, well below the NbN critical temperature (T/sub c/=10-11 K). Continuous-wave and pulsed-laser optical sources in the 400-nm-to 3500-nm-wavelength range were used to determine the detector performance in the photon-counting mode. Experimental quantum efficiency was found to exponentially depend on the photon wavelength, and for our best, 3.5-nm-thick, 100-/spl mu/m/sup 2/-area devices varied from >10% for 405-nm radiation to 3.5% for 1550-nm photons. The detector response time and jitter were /spl sim/100 ps and 35 ps, respectively, and were acquisition system limited. The dark counts were below 0.01 per second at optimal biasing. In terms of the counting rate, jitter, and dark counts, the NbN single-photon detectors significantly outperform their semiconductor counterparts. Already-identified applications for our devices range from noncontact testing of semiconductor CMOS VLSI circuits to free-space quantum cryptography and communications. |
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1051-8223 |
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509 |
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Zhang, J.; Boiadjieva, N.; Chulkova, G.; Deslandes, H.; Gol'tsman, G. N.; Korneev, A.; Kouminov, P.; Leibowitz, M.; Lo, W.; Malinsky, R.; Okunev, O.; Pearlman, A.; Slysz, W.; Smirnov, K.; Tsao, C.; Verevkin, A.; Voronov, B.; Wilsher, K.; Sobolewski, R. |
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Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors |
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Journal Article |
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2003 |
Publication |
Electron. Lett. |
Abbreviated Journal |
Electron. Lett. |
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Volume |
39 |
Issue |
14 |
Pages |
1086-1088 |
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Keywords |
NbN SSPD, SNSPD, applications |
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The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed. |
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0013-5194 |
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1512 |
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Jukna, A.; Kitaygorsky, J.; Pan, D.; Cross, A.; Perlman, A.; Komissarov, I.; Sobolewski, R.; Okunev, O.; Smirnov, K.; Korneev, A.; Chulkova, G.; Milostnaya, I.; Voronov, B.; Gol'tsman, G. |
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Dynamics of hotspot formation in nanostructured superconducting stripes excited with single photons |
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Journal Article |
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2008 |
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Acta Physica Polonica A |
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Acta Physica Polonica A |
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113 |
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3 |
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955-958 |
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SSPD, SNSPD |
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Dynamics of a resistive hotspot formation by near-infrared-wavelength single photons in nanowire-type superconducting NbN stripes was investigated. Numerical simulations of ultrafast thermalization of photon-excited nonequilibrium quasiparticles, their multiplication and out-diffusion from a site of the photon absorption demonstrate that 1.55 μm wavelength photons create in an ultrathin, two-dimensional superconducting film a resistive hotspot with the diameter which depends on the photon energy, and the nanowire temperature and biasing conditions. Our hotspot model indicates that under the subcritical current bias of the 2D stripe, the electric field penetrates the superconductor at the hotspot boundary, leading to suppression of the stripe superconducting properties and accelerated development of a voltage transient across the stripe. |
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1414 |
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Reiger, E.; Pan, D.; Slysz, W.; Jukna, A.; Sobolewski, R.; Dorenbos, S.; Zwiller, V.; Korneev, A.; Chulkova, G.; Milostnaya, I.; Minaeva, O.; Gol'tsman, G.; Kitaygorsky, J. |
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Spectroscopy with nanostructured superconducting single photon detectors |
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Journal Article |
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Year |
2007 |
Publication |
IEEE J. Select. Topics Quantum Electron. |
Abbreviated Journal |
IEEE J. Select. Topics Quantum Electron. |
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Volume |
13 |
Issue |
4 |
Pages |
934-943 |
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Keywords |
SSPD, SNSPD |
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Superconducting single-photon detectors (SSPDs) are nanostructured devices made from ultrathin superconducting films. They are typically operated at liquid helium temperature and exhibit high detection efficiency, in combination with very low dark counts, fast response time, and extremely low timing jitter, within a broad wavelength range from ultraviolet to mid-infrared (up to 6 mu m). SSPDs are very attractive for applications such as fiber-based telecommunication, where single-photon sensitivity and high photon-counting rates are required. We review the current state-of-the-art in the SSPD research and development, and compare the SSPD performance to the best semiconducting avalanche photodiodes and other superconducting photon detectors. Furthermore, we demonstrate that SSPDs can also be successfully implemented in photon-energy-resolving experiments. Our approach is based on the fact that the size of the hotspot, a nonsuperconducting region generated upon photon absorption, is linearly dependent on the photon energy. We introduce a statistical method, where, by measuring the SSPD system detection efficiency at different bias currents, we are able to resolve the wavelength of the incident photons with a resolution of 50 nm. |
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1077-260X |
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1424 |
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Il'in, K. S.; Verevkin, A. A.; Gol'tsman, G. N.; Sobolewski, R. |
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Infrared hot-electron NbN superconducting photodetectors for imaging applications |
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Journal Article |
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Year |
1999 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
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12 |
Issue |
11 |
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755-758 |
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NbN SSPD, SNSPD |
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We report an effective quantum efficiency of 340, responsivity >200 A W-1 (>104 V W-1) and response time of 27±5 ps at temperatures close to the superconducting transition for NbN superconducting hot-electron photodetectors (HEPs) in the near-infrared and optical ranges. Our studies were performed on a few nm thick NbN films deposited on sapphire substrates and patterned into µm-size multibridge detector structures, incorporated into a coplanar transmission line. The time-resolved photoresponse was studied by means of subpicosecond electro-optic sampling with 100 fs wide laser pulses. The quantum efficiency and responsivity studies of our photodetectors were conducted using an amplitude-modulated infrared beam, fibre-optically coupled to the device. The observed picosecond response time and the very high efficiency and sensitivity of the NbN HEPs make them an excellent choice for infrared imaging photodetectors and input optical-to-electrical transducers for superconducting digital circuits. |
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0953-2048 |
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1562 |
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Gol’tsman, G. N.; Okunev, O.; Chulkova, G.; Lipatov, A.; Semenov, A.; Smirnov, K.; Voronov, B.; Dzardanov, A.; Williams, C.; Sobolewski, R. |
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Picosecond superconducting single-photon optical detector |
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Journal Article |
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2001 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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79 |
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6 |
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705-707 |
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NbN SSPD, SNSPD |
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We experimentally demonstrate a supercurrent-assisted, hotspot-formation mechanism for ultrafast detection and counting of visible and infrared photons. A photon-induced hotspot leads to a temporary formation of a resistive barrier across the superconducting sensor strip and results in an easily measurable voltage pulse. Subsequent hotspot healing in ∼30 ps time frame, restores the superconductivity (zero-voltage state), and the detector is ready to register another photon. Our device consists of an ultrathin, very narrow NbN strip, maintained at 4.2 K and current-biased close to the critical current. It exhibits an experimentally measured quantum efficiency of ∼20% for 0.81 μm wavelength photons and negligible dark counts. |
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0003-6951 |
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