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Author Verevkin, A. A.; Pearlman, A.; Slysz, W.; Zhang, J.; Sobolewski, R.; Chulkova, G.; Okunev, O.; Kouminov, P.; Drakinskij, V.; Smirnov, K.; Kaurova, N.; Voronov, B.; Gol’tsman, G.; Currie, M. url  doi
openurl 
  Title Ultrafast superconducting single-photon detectors for infrared wavelength quantum communications Type Conference Article
  Year 2003 Publication Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume 5105 Issue Pages (down) 160-170  
  Keywords NbN SSPD, SNSPD, applications, single-photon detector, quantum cryptography, quantum communications, superconducting devices  
  Abstract We have developed a new class of superconducting single-photon detectors (SSPDs) for ultrafast counting of infrared (IR) photons for secure quantum communications. The devices are operated on the quantum detection mechanism, based on the photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconducting stripe. The detectors are fabricated from 3.5-nm-thick NbN films and they operate at 4.2 K inside a closed-cycle refrigerator or liquid helium cryostat. Various continuous and pulsed laser sources have been used in our experiments, enabling us to determine the detector experimental quantum efficiency (QE) in the photon-counting mode, response time, time jitter, and dark counts. Our 3.5-nm-thick SSPDs reached QE above 15% for visible light photons and 5% at 1.3 – 1.5 μm infrared range. The measured real-time counting rate was above 2 GHz and was limited by the read-out electronics (intrinsic response time is <30 ps). The measured jitter was <18 ps, and the dark counting rate was <0.01 per second. The measured noise equivalent power (NEP) is 2 x 10-18 W/Hz1/2 at λ = 1.3 μm. In near-infrared range, in terms of the counting rate, jitter, dark counts, and overall sensitivity, the NbN SSPDs significantly outperform their semiconductor counterparts. An ultrafast quantum cryptography communication technology based on SSPDs is proposed and discussed.  
  Address  
  Corporate Author Thesis  
  Publisher SPIE Place of Publication Editor Donkor, E.; Pirich, A.R.; Brandt, H.E.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference Quantum Information and Computation  
  Notes Approved no  
  Call Number Serial 1514  
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Author Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Schubert, J.; Hubers, H.-W.; Schwaab, G.; Gol’tsman, G.; Gershenzon, E. url  doi
openurl 
  Title Performance of NbN phonon-cooled hot-electron bolometric mixer at Terahertz frequencies Type Conference Article
  Year 1998 Publication Proc. 6-th Int. Conf. Terahertz Electron. Abbreviated Journal Proc. 6-th Int. Conf. Terahertz Electron.  
  Volume Issue Pages (down) 149-152  
  Keywords NbN HEB mixers  
  Abstract The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The results of the DSB noire temperature are: 1300 K at 650 GHz, 4700 K at 2.5 TBz and 10000 K at 3.12 THz. The RF bandwidth of the receiver is at least 2.5 THz. The amount of LO power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain is measured to be -9 dB, the total conversion gain -14 dB.  
  Address  
  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
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  ISSN ISBN Medium  
  Area Expedition Conference IEEE Sixth International Conference on Terahertz Electronics Proceedings. THZ 98. (Cat. No.98EX171)  
  Notes Approved no  
  Call Number Serial 1582  
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Author Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Desmaris, V.; Belitsky, V.; Gol’tsman, G. openurl 
  Title Gain bandwidth of NbN HEB mixers on GaN buffer layer operating at 2 THz local oscillator frequency Type Conference Article
  Year 2017 Publication Proc. 28th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 28th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages (down) 147-148  
  Keywords NbN HEB mixers, GaN buffer-layer, IF bandwidth  
  Abstract In this paper, we present IF bandwidth measurement results of NbN HEB mixers, which are employing NbN thin films grown on a GaN buffer-layer. The HEB mixers were operated in the heterodyne regime at a bath temperature of approximately 4.5 K and with a local oscillator operating at a frequency of 2 THz. A quantum cascade laser served as the local oscillator and a reference synthesizer based on a BWO generator (130-160 GHz) and a semiconductor superlattice (SSL) frequency multiplier was used as a signal source. By changing the LO frequency it was possible to record the IF response or gain bandwidth of the HEB with a spectrum analyzer at the operation point, which yielded lowest noise temperature. The gain bandwidth that was recorded in the heterodyne regime at 2 THz amounts to approximately 5 GHz and coincides well with a measurement that has been performed at elevated bath temperatures and lower LO frequency of 140 GHz. These findings strongly support that by using a GaN buffer-layer the phonon escape time of NbN HEBs can be significantly lower as compared to e.g. Si substrate, thus, providing higher gain bandwidth.  
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  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1175  
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Author Fiore, A.; Marsili, F.; Bitauld, D.; Gaggero, A.; Leoni, R.; Mattioli, F.; Divochiy, A.; Korneev, A.; Seleznev, V.; Kaurova, N.; Minaeva, O.; Gol’tsman, G. url  doi
openurl 
  Title Counting photons using a nanonetwork of superconducting wires Type Conference Article
  Year 2009 Publication Nano-Net Abbreviated Journal  
  Volume Issue Pages (down) 120-122  
  Keywords SSPD, SNSPD  
  Abstract We show how the parallel connection of photo-sensitive superconducting nanowires can be used to count the number of photons in an optical pulse, down to the single-photon level. Using this principle we demonstrate photon-number resolving detectors with unprecedented sensitivity and speed at telecommunication wavelengths.  
  Address  
  Corporate Author Thesis  
  Publisher Springer Berlin Heidelberg Place of Publication Berlin, Heidelberg Editor Cheng, M.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 978-3-642-02427-6 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number 10.1007/978-3-642-02427-6_20 Serial 1242  
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Author Gol’tsman, G.; Korneev, A.; Tarkhov, M.; Seleznev, V.; Divochiy, A.; Minaeva, O.; Kaurova, N.; Voronov, B.; Okunev, O.; Chulkova, G.; Milostnaya, I.; Smirnov, K. url  doi
openurl 
  Title Middle-infrared ultrafast superconducting single photon detector Type Conference Article
  Year 2007 Publication 32nd IRMW / 15th ICTE Abbreviated Journal 32nd IRMW / 15th ICTE  
  Volume Issue Pages (down) 115-116  
  Keywords SSPD, SNSPD  
  Abstract We present the results of the research on quantum efficiency of the ultrathin-film superconducting single-photon detectors (SSPD) in the wavelength rage from 1 mum to 5.7 mum. Reduction of operation temperature to 1.6 K allowed us to measure quantum efficiency of ~1 % at 5.7 mum wavelength with the SSPD made from 4-nm-thick NbN film. In a pursuit of further performance improvement we endeavored SSPD fabricating from 4-nm-thick MoRe film as an alternative material. The MoRe film exhibited transition temperature of 7.7K, critical current density at 4.2 K temperature was 1.1times10 6 A/cm 2 , and diffusivity 1.73 cmVs. The single-photon response was observed with MoRe SSPD at 1.3 mum wavelength with quantum efficiency estimated to be 0.04%.  
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  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1246  
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Author Gol’tsman, G. N. url  doi
openurl 
  Title Terahertz technology in Russia Type Conference Article
  Year 1994 Publication 24th European Microwave Conf. Abbreviated Journal 24th European Microwave Conf.  
  Volume 1 Issue Pages (down) 113-121  
  Keywords BWO, HEB mixers  
  Abstract The presentation consider the parameters and operating peculiarities of unique microwave generators of the terahertz range which have been created in Russia – the backward wave oscillators – as well as certain devices based on these generators, such as high resolution. spectrometers and time-resolving spectrometers with picosecond temporal resolution. Most resent BWO-based studies are illustrated by a project devoted to superconductive hot-electron. bolometers which are of great independent value for the terahertz technology as high-sensitive picosecond detectors and low noise broad-band mixers.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference 24th European Microwave Conference  
  Notes Approved no  
  Call Number Serial 1635  
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Author Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Lecomte, B.; Dauplay, F.; Krieg, J.-M.; Delorme, Y.; Feret, A.; Hübers, H.-W.; Semenov, A. D.; Gol’tsman, G. N. url  openurl
  Title 2.5 THz multipixel heterodyne receiver based on NbN HEB mixers Type Abstract
  Year 2007 Publication Proc. 18th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 18th Int. Symp. Space Terahertz Technol.  
  Volume Issue Pages (down) 112  
  Keywords NbN HEB mixers  
  Abstract A 16 pixel heterodyne receiver for 2.5 THz has been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5μm thick Si3N4 / SiO2 membranes. Spherical mirrors (one per pixel) and backshort distance from the antenna have been used to design the output mixer beam profile. The camera design allows all 16 pixel IF readout in parallel. Measurements of the mixers sensitivity and the input RF band are presented, and compared against calculations.  
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  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1419  
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Author Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. url  doi
openurl 
  Title Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures Type Journal Article
  Year 2010 Publication Bull. Russ. Acad. Sci. Phys. Abbreviated Journal Bull. Russ. Acad. Sci. Phys.  
  Volume 74 Issue 1 Pages (down) 100-102  
  Keywords 2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth  
  Abstract The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1062-8738 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1217  
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Author Chulkova, G.; Milostnaya, I.; Korneev, A.; Minaeva, O.; Rubtsova, I.; Voronov, B.; Okunev, O.; Smirnov, K.; Gol’tsman, G.; Kitaygorsky, J.; Cross, A.; Pearlman, A.; Sobolewski, R.; Slysz, W. url  doi
openurl 
  Title Superconducting nanostructures for counting of single photons in the infrared range Type Conference Article
  Year 2005 Publication Proc. 2-nd CAOL Abbreviated Journal Proc. 2-nd CAOL  
  Volume 2 Issue Pages (down) 100-103  
  Keywords SSPD, SNSPD  
  Abstract We present our studies on ultrafast superconducting single-photon detectors (SSPDs) based on ultrathin NbN nanostructures. Our SSPDs are patterned by electron beam lithography from 4-nm thick NbN film into meander-shaped strips covering square area of 10/spl times/10 /spl mu/m/sup 2/. The advances in the fabrication technology allowed us to produce highly uniform 100-120-nm-wide strips with meander filling factor close to 0.6. The detectors exploit a combined detection mechanism, where upon a single-photon absorption, an avalanche of excited hot electrons and the biasing supercurrent, jointly produce a picosecond voltage transient response across the superconducting nanostrip. The SSPDs are typically operated at 4.2 K, but they have shown that their sensitivity in the infrared radiation range can be significantly improved by lowering the operating temperature from 4.2 K to 2 K. When operated at 2 K, the SSPD quantum efficiency (QE) for visible light photons reaches 30-40%, which is the saturation value limited by optical absorption of our 4-nm-thick NbN film. For 1.55 /spl mu/m photons, QE was /spl sim/20% and decreases exponentially with the increase of the optical wavelength, but even at the wavelength of 6 /spl mu/m the detector remains sensitive to single photons and exhibits QE of about 10/sup -2/%. The dark (false) count rate at 2 K is as low as 2 /spl times/ 10/sup -4/ s/sup -1/, what makes our detector essentially a background-limited sensor. The very low dark-count rate results in the noise equivalent power (NEP) as low as 10/sup -18/ WHz/sup -1/2/ for the mid-infrared range (6 /spl mu/m). Further improvement of the SSPD performance in the mid-infrared range can be obtained by substituting NbN for the other, lower-T/sub c/ superconductors with the narrow superconducting gap and low quasiparticle diffusivity. The use of such materials will shift the cutoff wavelength towards the values even longer than 6 /spl mu/m.  
  Address  
  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference Second International Conference on Advanced Optoelectronics and Lasers  
  Notes Approved no  
  Call Number Serial 1461  
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Author Tuchak, A. N.; Gol’tsman, G. N.; Kitaeva, G. K.; Penin, A. N.; Seliverstov, S. V.; Finkel, M. I.; Shepelev, A. V.; Yakunin, P. V. url  doi
openurl 
  Title Generation of nanosecond terahertz pulses by the optical rectification method Type Journal Article
  Year 2012 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 96 Issue 2 Pages (down) 94-97  
  Keywords optical rectification, lithium niobate crystal  
  Abstract The possibility of the generation of quasi-cw terahertz radiation by the optical rectification method for broad-band Fourier unlimited nanosecond laser pulses has been experimentally demonstrated. The broadband radiation of a LiF dye-center laser is used as a pump source of a nonlinear optical oscillator. The energy efficiency of terahertz optical frequency conversion in a periodically polarized lithium niobate crystal is 4 × 10−9 at a pump power density of 7 MW/cm2.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-3640 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1377  
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