| Records |
| Author |
Ryzhii, V.; Otsuji, T.; Ryzhii, M.; Leiman, V. G.; Fedorov, G.; Goltzman, G. N.; Gayduchenko, I. A.; Titova, N.; Coquillat, D.; But, D.; Knap, W.; Mitin, V.; Shur, M. S. |
| Title |
Two-dimensional plasmons in lateral carbon nanotube network structures and their effect on the terahertz radiation detection |
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Journal Article |
| Year |
2016 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
| Volume |
120 |
Issue |
4 |
Pages  |
044501 (1 to 13) |
| Keywords |
carbon nanotubes, CNT detectors, plasmons |
| Abstract |
We consider the carrier transport and plasmonic phenomena in the lateral carbon nanotube (CNT) networks forming the device channel with asymmetric electrodes. One electrode is the Ohmic contact to the CNT network and the other contact is the Schottky contact. These structures can serve as detectors of the terahertz (THz) radiation. We develop the device model for collective response of the lateral CNT networks which comprise a mixture of randomly oriented semiconductor CNTs (s-CNTs) and quasi-metal CNTs (m-CNTs). The proposed model includes the concept of the collective two-dimensional (2D) plasmons in relatively dense networks of randomly oriented CNTs (CNT “felt”) and predicts the detector responsivity spectral characteristics exhibiting sharp resonant peaks at the signal frequencies corresponding to the 2D plasmonic resonances. The detection mechanism is the rectification of the ac current due the nonlinearity of the Schottky contact current-voltage characteristics under the conditions of a strong enhancement of the potential drop at this contact associated with the plasmon excitation. The detector responsivity depends on the fractions of the s- and m-CNTs. The burning of the near-contact regions of the m-CNTs or destruction of these CNTs leads to a marked increase in the responsivity in agreement with our experimental data. The resonant THz detectors with sufficiently dense lateral CNT networks can compete and surpass other THz detectors using plasmonic effects at room temperatures. |
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0021-8979 |
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1777 |
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Vodolazov, D. Y.; Manova, N. N.; Korneeva, Y. P.; Korneev, A. A. |
| Title |
Timing jitter in NbN superconducting microstrip single-photon detector |
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Journal Article |
| Year |
2020 |
Publication |
Phys. Rev. Applied |
Abbreviated Journal |
Phys. Rev. Applied |
| Volume |
14 |
Issue |
4 |
Pages |
044041 (1 to 8) |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
We experimentally study timing jitter of single-photon detection by NbN superconducting strips with width w ranging from 190 nm to 3μm. We find that timing jitter of both narrow (190 nm) and micron-wide strips is about 40 ps at currents where internal detection efficiency η saturates and it is close to our instrumental jitter. We also calculate intrinsic timing jitter in wide strips using the modified time-dependent Ginzburg-Landau equation coupled with a two-temperature model. We find that with increasing width the intrinsic timing jitter increases and the effect is most considerable at currents where a rapid growth of η changes to saturation. We relate it with complicated vortex and antivortex dynamics, which depends on a photon’s absorption site across the strip and its width. The model also predicts that at current close to depairing current the intrinsic timing jitter of a wide strip could be about ℏ/kBTc (Tc is a critical temperature of superconductor), i.e., the same as for a narrow strip. |
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2331-7019 |
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1788 |
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Lusche, R.; Semenov, A.; Ilin, K.; Siegel, M.; Korneeva, Y.; Trifonov, A.; Korneev, A.; Goltsman, G.; Vodolazov, D.; Hübers, H.-W. |
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Effect of the wire width on the intrinsic detection efficiency of superconducting-nanowire single-photon detectors |
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Journal Article |
| Year |
2014 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
| Volume |
116 |
Issue |
4 |
Pages |
043906 (1 to 9) |
| Keywords |
NbN SSPD, SNSPD, TaN |
| Abstract |
A thorough spectral study of the intrinsic single-photon detection efficiency in superconducting TaN and NbN nanowires with different widths has been performed. The experiment shows that the cut-off of the intrinsic detection efficiency at near-infrared wavelengths is most likely controlled by the local suppression of the barrier for vortex nucleation around the absorption site. Beyond the cut-off quasi-particle diffusion in combination with spontaneous, thermally activated vortex crossing explains the detection process. For both materials, the reciprocal cut-off wavelength scales linearly with the wire width where the scaling factor agrees with the hot-spot detection model. |
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0021-8979 |
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1357 |
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Li, T. F.; Pashkin, Yu. A.; Astafiev, O.; Nakamura, Y.; Tsai, J. S.; Im, H. |
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High-frequency metallic nanomechanical resonators |
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Journal Article |
| Year |
2008 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
| Volume |
92 |
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043112(1)-043112(3) |
| Keywords |
nanomechanical resonator, polycrystalline metal films |
| Abstract |
We developed a technology to fabricate fully metallic doubly clamped beams working as nanomechanical resonators. Measured with a magnetomotive detection scheme, the beams, made of polycrystalline metal films, show as good quality as previously reported ones made of single crystal materials, such as Si, GaAs, AlN, and SiC. Our method is compatible with the conventional fabrication process for nanoscale electronic circuits and thus offers a possibility of easily integrating the beams into superconducting charge and flux qubits and single-electron transistors as well as coupling them to coplanar waveguide resonators. |
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621 |
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Bennett, Douglas A.; Schmidt, Daniel R.; Swetz, Daniel S.; Ullom, Joel N. |
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Phase-slip lines as a resistance mechanism in transition-edge sensors |
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Journal Article |
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2014 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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104 |
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042602 |
| Keywords |
microbolometers, TES, phase-slip lines, PSL |
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The fundamental mechanism of resistance in voltage-biased superconducting films is poorly understood despite its importance as the basis of transition-edge sensors (TESs). TESs are utilized in state-of-the-art microbolometers and microcalorimeters covering a wide range of energies and applications. We present a model for the resistance of a TES based on phase-slip lines (PSLs) and compare the model to data. One of the model's predictions, discrete changes in the number of PSLs, is a possible explanation for the observed switching between discrete current states in localized regions of bias. |
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Recommended by Klapwijk |
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929 |
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