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Johnson, M. A., Betz, A. L., McLaren, R. A., Townes, C. H., & Sutton, E. C. (1976). Nonthermal 10 micron CO2 emission lines in the atmospheres of Mars and Venus. A&A, 208, 145.
Keywords: carbon dioxide, emission spectra, infrared spectra, mars atmosphere, nonthermal radiation, optical heterodyning, planetary radiation, venus atmosphere, absorption spectra, energy transfer, line spectra, molecular absorption, molecular collisions, near infrared radiation, solar flux
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Betz, A. L., Johnson, M. A., McLaren, R. A., & Sutton, E. C. (1976). Heterodyne detection of CO2 emission lines and wind velocities in the atmosphere of Venus. Astrophys. J., 208, L141–L144.
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Pyatkov, F., Khasminskaya, S., Kovalyuk, V., Hennrich, F., Kappes, M. M., Goltsman, G. N., et al. (2017). Sub-nanosecond light-pulse generation with waveguide-coupled carbon nanotube transducers. Beilstein J. Nanotechnol., 8, 38–44.
Abstract: Carbon nanotubes (CNTs) have recently been integrated into optical waveguides and operated as electrically-driven light emitters under constant electrical bias. Such devices are of interest for the conversion of fast electrical signals into optical ones within a nanophotonic circuit. Here, we demonstrate that waveguide-integrated single-walled CNTs are promising high-speed transducers for light-pulse generation in the gigahertz range. Using a scalable fabrication approach we realize hybrid CNT-based nanophotonic devices, which generate optical pulse trains in the range from 200 kHz to 2 GHz with decay times below 80 ps. Our results illustrate the potential of CNTs for hybrid optoelectronic systems and nanoscale on-chip light sources.
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Teich, M. C. (1968). Infrared heterodyne detection. In Proc. IEEE (Vol. 56, pp. 37–46). IEEE.
Abstract: Heterodyne experiments have been performed in the middle infrared region of the electromagnetic spectrum using the CO2laser as a radiation source. Theoretically optimum operation has been achieved at kHz heterodyne frequencies using photoconductive Ge:Cu detectors operated at 4°K, and at kHz and MHz frequencies using Pb1-xSnxSe photovoltaic detectors at 77°K. In accordance with the theory, the minimum detectable power observed is a factor of 2/η greater than the theoretically perfect quantum counter, hvΔf. The coefficient 2/η varies from 5 to 25 for the detectors investigated in this study. A comparison is made between photoconductive and photodiode detectors for heterodyne use in the infrared, and it is concluded that both are useful. Heterodyne detection at 10.6 µm is expected to be useful for communications applications, infrared radar, and heterodyne spectroscopy. It has particular significance because of the high radiation power available from the CO2laser, and because of the 8 to 14 µm atmospheric window.
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Verevkin, A., Slysz, W., Pearlman, A., Zhang, J., Sobolewski, R., Okunev, O., et al. (2003). Real-time GHz-rate counting of infrared photons using nanostructured NbN superconducting detectors. In CLEO/QELS (CThM8). Optical Society of America.
Abstract: We demonstrate that our ultrathin, nanometer-width NbN superconducting single-photon detectors are capable of above 1-GHz-frequency, real-time counting of near-infrared photons. The measured system jitter of the detector is below 15 ps.
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Mitin, V., Antipov, A., Sergeev, A., Vagidov, N., Eason, D., & Strasser, G. (2011). Quantum Dot Infrared Photodetectors: Photoresponse Enhancement Due to Potential Barriers. Nanoscale res lett, 6(1), 6.
Abstract: Potential barriers around quantum dots (QDs) play a key role in kinetics of photoelectrons. These barriers are always created, when electrons from dopants outside QDs fill the dots. Potential barriers suppress the capture processes of photoelectrons and increase the photoresponse. To directly investigate the effect of potential barriers on photoelectron kinetics, we fabricated several QD structures with different positions of dopants and various levels of doping. The potential barriers as a function of doping and dopant positions have been determined using nextnano3 software. We experimentally investigated the photoresponse to IR radiation as a function of the radiation frequency and voltage bias. We also measured the dark current in these QD structures. Our investigations show that the photoresponse increases ~30 times as the height of potential barriers changes from 30 to 130 meV.
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Zhang, J., Pearlman, A., Slysz, W., Verevkin, A., Sobolewski, R., Okunev, O., et al. (2003). Infrared picosecond superconducting single-photon detectors for CMOS circuit testing. In CLEO/QELS (Cmv4). Optical Society of America.
Abstract: Novel, NbN superconducting single-photon detectors have been developed for ultrafast, high quantum efficiency detection of single quanta of infrared radiation. Our devices have been successfully implemented in a commercial VLSI CMOS circuit testing system.
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Beck, M., Klammer, M., Rousseau, I., Gol’tsman, G. N., Diamant, I., Dagan, Y., et al. (2015). Probing superconducting gap dynamics with THz pulses. In CLEO (SM3H.3 (1 to 2)). Optical Society of America.
Abstract: We studied superconducting gap dynamics in a BCS superconductor NbN and electron doped cuprate superconductor PCCO following excitation with near-infrared (NIR) and narrow band THz pulses. Systematic studies on PCCO imply very selective electron-phonon coupling.
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Marsili, F., Bitauld, D., Divochiy, A., Gaggero, A., Leoni, R., Mattioli, F., et al. (2008). Superconducting nanowire photon number resolving detector at telecom wavelength. In CLEO/QELS (Qmj1 (1 to 2)). Optical Society of America.
Abstract: We demonstrate a photon-number-resolving (PNR) detector, based on parallel superconducting nanowires, capable of resolving up to 5 photons in the telecommunication wavelength range, with sensitivity and speed far exceeding existing approaches.
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Tretyakov, I., Svyatodukh, S., Perepelitsa, A., Ryabchun, S., Kaurova, N., Shurakov, A., et al. (2020). Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector. Nanomaterials (Basel), 10(5), 1–12.
Abstract: In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology.
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Масленников, С. Н. (2007). Смесители на эффекте электронного разогрева для терагерцового и инфракрасного диапазонов. Ph.D. thesis, , .
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Финкель, М. И. (2006). Терагерцовые смесители на эффекте электронного разогрева в ультратонких плёнках NbN и NbTiN. Ph.D. thesis, , .
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Doi, Y., Wang, Z., Ueda, T., Nickels, P., Komiyama, S., Patrashin, M., et al. (2009). CSIP – a novel photon-counting detector applicable for the SPICA far-infrared instrument. SPICA, (SPICA Workshop 2009).
Abstract: We describe a novel GaAs/AlGaAs double-quantumwell device for the infrared photon detection, called ChargeSensitive Infrared Phototransistor (CSIP). The principle of CSIP detector is the photo-excitation of an intersubband transition in a QW as an charge integrating gate and the signal ampli<ef><ac><81>cation by another QW as a channel with very high gain, which provides us with extremely high responsivity (104 – 106 A/W). It has been demonstrated that the CSIP designed for the mid-infrared wavelength (14.7 μm) has an excellent sensitivity; the noise equivalent power (NEP) of 7 × 10-19 W/ with the quantum effciency of ~ 2%. Advantages of the CSIP against the other highly sensitive detectors are, huge dynamic range of > 106, low output impedance of 103 – 104 Ohms, and relatively high operation temperature (> 2 K). We discuss possible applications of the CSIP to FIR photon detection covering 35 – 60 μm waveband, which is a gap uncovered with presently available photoconductors.
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