| Records |
| Author |
Nikogosyan, A. S.; Martirosyan, R. M.; Hakhoumian, A. A.; Makaryan, A. H.; Tadevosyan, V. R.; Goltsman, G. N.; Antipov, S. V. |
| Title |
Effect of absorption on the efficiency of terahertz radiation generation in the metal waveguide partially filled with nonlinear crystal LiNbO3, DAST or ZnTe |
Type |
Journal Article |
| Year |
2019 |
Publication |
J. Contemp. Phys. |
Abbreviated Journal |
J. Contemp. Phys. |
| Volume |
54 |
Issue |
1 |
Pages  |
97-104 |
| Keywords |
nonlinear crystal, THz, waveguide |
| Abstract |
The influence of terahertz (THz) radiation absorption on the efficiency of generation of coherent THz radiation in the system ‘nonlinear-optical crystal partially filling the cross section of a rectangular metal waveguide’ has been investigated. The efficiency of the nonlinear frequency conversion of optical laser radiation to the THz range depends on the loss in the system and the fulfillment of the phase-matching (FM) condition in a nonlinear crystal. The method of partially filling of a metal waveguide with a nonlinear optical crystal is used to ensure phase matching. The phase matching is achieved by numerical determination of the thickness of the nonlinear crystal, that is the degree of partial filling of the waveguide. The attenuation of THz radiation caused by losses both in the metal walls of the waveguide and in the crystal was studied, taking into account the dimension of the cross section of the waveguide, the degree of partial filling, and the dielectric constant of the crystal. It is shown that the partial filling of the waveguide with a nonlinear crystal results in an increase in the efficiency of generation of THz radiation by an order of magnitude, owing to the decrease in absorption. |
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1068-3372 |
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1289 |
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| Author |
de Lange, Gert; Krieg, Jean-Michel; Honingh, Netty; Karpov, Alexandre; Cherednichenko, Sergey |
| Title |
Performance of the HIFI flight mixers |
Type |
Conference Article |
| Year |
2008 |
Publication |
Proc. 19th Int. Symp. Space Terahertz Technol. |
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Issue |
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Pages |
98-105 |
| Keywords |
HEB mixer applications, HEB applications |
| Abstract |
We summarize the technology and final results of the superconducting heterodyne SIS and HEB mixers that are developed for the HIFI instrument. Within HIFI 7 frequency bands cover the frequency range from 480 GHz to 1910 GHz. We describe the different device technologies and optical coupling schemes that are used to cover the frequency bands. The efforts of the different mixer teams that participate in HIFI have contributed to an instrument that will have unprecedented sensitivity and frequency coverage. |
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Groningen |
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no |
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1074 |
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Гершензон, Е. М.; Литвак-Горская, Л. Б.; Луговая, Г. Я.; Шапиро, Е. З. |
| Title |
Об интерпретации отрицательного магнитосопротивления в случае проводимости по верхней зоне Хаббарда в n-Ge⟨Sb⟩ |
Type |
Journal Article |
| Year |
1986 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
| Volume |
20 |
Issue |
1 |
Pages |
99-103 |
| Keywords |
n-Ge, Hubbard upper zone conductivity, negative magnetoresistance |
| Abstract |
В рамках теории квантовых поправок к проводимости объяснено отрицательное магнитосопротивление в n-Ge с концентрацией доноров Nd≃2.8⋅1016÷1.1⋅1017см−3, наблюдаемое в диапазоне температур 4.2−10 K, когда основной вклад в проводимость дают электроны верхней зоны Хаббарда. Показано, что время релаксации фазы волновой функции τφ определяется временем электрон-фононного взаимодействия τeph. |
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1759 |
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Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. |
| Title |
Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures |
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Journal Article |
| Year |
2010 |
Publication |
Bull. Russ. Acad. Sci. Phys. |
Abbreviated Journal |
Bull. Russ. Acad. Sci. Phys. |
| Volume |
74 |
Issue |
1 |
Pages |
100-102 |
| Keywords |
2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth |
| Abstract |
The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering. |
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1062-8738 |
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no |
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1217 |
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Chulkova, G.; Milostnaya, I.; Korneev, A.; Minaeva, O.; Rubtsova, I.; Voronov, B.; Okunev, O.; Smirnov, K.; Gol’tsman, G.; Kitaygorsky, J.; Cross, A.; Pearlman, A.; Sobolewski, R.; Slysz, W. |
| Title |
Superconducting nanostructures for counting of single photons in the infrared range |
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Conference Article |
| Year |
2005 |
Publication |
Proc. 2-nd CAOL |
Abbreviated Journal |
Proc. 2-nd CAOL |
| Volume |
2 |
Issue |
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Pages |
100-103 |
| Keywords |
SSPD, SNSPD |
| Abstract |
We present our studies on ultrafast superconducting single-photon detectors (SSPDs) based on ultrathin NbN nanostructures. Our SSPDs are patterned by electron beam lithography from 4-nm thick NbN film into meander-shaped strips covering square area of 10/spl times/10 /spl mu/m/sup 2/. The advances in the fabrication technology allowed us to produce highly uniform 100-120-nm-wide strips with meander filling factor close to 0.6. The detectors exploit a combined detection mechanism, where upon a single-photon absorption, an avalanche of excited hot electrons and the biasing supercurrent, jointly produce a picosecond voltage transient response across the superconducting nanostrip. The SSPDs are typically operated at 4.2 K, but they have shown that their sensitivity in the infrared radiation range can be significantly improved by lowering the operating temperature from 4.2 K to 2 K. When operated at 2 K, the SSPD quantum efficiency (QE) for visible light photons reaches 30-40%, which is the saturation value limited by optical absorption of our 4-nm-thick NbN film. For 1.55 /spl mu/m photons, QE was /spl sim/20% and decreases exponentially with the increase of the optical wavelength, but even at the wavelength of 6 /spl mu/m the detector remains sensitive to single photons and exhibits QE of about 10/sup -2/%. The dark (false) count rate at 2 K is as low as 2 /spl times/ 10/sup -4/ s/sup -1/, what makes our detector essentially a background-limited sensor. The very low dark-count rate results in the noise equivalent power (NEP) as low as 10/sup -18/ WHz/sup -1/2/ for the mid-infrared range (6 /spl mu/m). Further improvement of the SSPD performance in the mid-infrared range can be obtained by substituting NbN for the other, lower-T/sub c/ superconductors with the narrow superconducting gap and low quasiparticle diffusivity. The use of such materials will shift the cutoff wavelength towards the values even longer than 6 /spl mu/m. |
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Second International Conference on Advanced Optoelectronics and Lasers |
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1461 |
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