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Smirnov, K. V.; Vachtomin, Yu. B.; Antipov, S. V.; Maslennikov, S. N.; Kaurova, N. S.; Drakinsky, V. N.; Voronov, B. M.; Gol'tsman, G. N.; Semenov, A. D.; Richter, H.; Hubers, H.-W. |
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Title |
Noise and gain performance of spiral antenna coupled HEB mixers at 0.7 THz and 2.5 THz |
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Conference Article |
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Year |
2003 |
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Proc. 14th Int. Symp. Space Terahertz Technol. |
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Proc. 14th Int. Symp. Space Terahertz Technol. |
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405-412 |
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NbN HEB mixers |
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Noise and gain performance of hot electron bolometer (HEB) mixers based on ultrathin superconducting NbN films integrated with a spiral antenna was studied. The noise temperature measurements for two samples with different active area of 3 p.m x 0.24 .tni and 1.3 1..tm x 0.12 1.tm were performed at frequencies 0.7 THz and 2.5 THz. The best receiver noise temperatures 370 K and 1600 K, respectively, have been found at these frequencies. The influence of contact resistance between the superconductor and the antenna terminals on the noise temperature of HEB is discussed. The noise and gain bandwidth of 5GHz and 4.2 GHz, respectively, are demonstrated for similar HEB mixer at 0.75 THz. |
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1502 |
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Hajenius, M.; Baselmans, J. J. A.; Gao, J. R.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol’tsman, G. |
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Title |
Improved NbN phonon cooled hot electron bolometer mixers |
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Conference Article |
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Year |
2003 |
Publication |
Proc. 14th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 14th Int. Symp. Space Terahertz Technol. |
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413-423 |
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NbN HEB mixers |
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NbN phonon-cooled hot electron bolometer mixers (HEBs) have been realized with negligible contact resistance to Au pads. By adding either a 5 nm Nb or a 10 nm NbTiN layer between the Au and NbN, to preserve superconductivity in the NbN under the Au contact pad, superior noise temperatures have been obtained. Using DC I,V curves and resistive transitions in combination with process parameters we analyze the nature of these improved devices and determine interface transparencies. |
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Tucson, USA |
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337 |
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Meledin, D.; Tong, C.-Y. E.; Blundell, R.; Goltsman, G. |
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Title |
Measurement of intermediate frequency bandwidth of hot electron bolometer mixers at terahertz frequency range |
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Journal Article |
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Year |
2003 |
Publication |
IEEE Microw. Wireless Compon. Lett. |
Abbreviated Journal |
IEEE Microw. Wireless Compon. Lett. |
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13 |
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11 |
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493-495 |
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waveguide NbN HEB mixers |
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We have developed a new experimental setup for measuring the IF bandwidth of superconducting hot electron bolometer mixers. In our measurement system we use a chopped hot filament as a broadband signal source, and can perform a high-speed IF scan with no loss of accuracy when compared to coherent methods. Using this technique we have measured the 3 dB IF bandwidth of hot electron bolometer mixers, designed for THz frequency operation, and made from 3-4 nm thick NbN film deposited on an MgO buffer layer over crystalline quartz. |
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1531-1309 |
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1509 |
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van't Klooster, C. G. M.; Parshin, V. V.; Myasnikova, S. E. |
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Reflectivity of antenna reflectors: measurements at frequencies between 110 and 200 GHz |
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Conference Article |
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2003 |
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Proc. Antennas and propagation society international symposium |
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3 |
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528-531 |
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mirror, reflection index, emissivity, reflectivity, mirror, Fabry-Perot interferometer, subterahertz, subTHz |
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It is imperative to test the mechanical, electrical and thermal-optical properties of MM and sub-MM reflector antennas. Electrical, thermal and optical properties are very important and high-accurate measurements lead, obviously, to more accurate results in applications. This paper deals with measurement of electrical reflectivity in the range 110-200 GHz. Reflectivity has been measured for a number of samples, which represent materials used in reflector antennas. Both metal samples and carbon-fibre samples were tested in a dedicated facility available for this purpose at the Applied Physics Institute in Nizhny Novgorod (IAP). The test facility is shortly discussed, with techniques for data extraction. Calibration is done with high quality silver coated mirrors and aluminium control samples. Accurate results have been derived with indicative interesting results. |
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583 |
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Baubert, J.; Salez, M.; Delorme, Y.; Pons, P.; Goltsman, G.; Merkel, H.; Leconte, B. |
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Title |
Membrane-based HEB mixer for THz applications |
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Conference Article |
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Year |
2003 |
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Proc. SPIE |
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Proc. SPIE |
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5116 |
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551-562 |
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membrane NbN HEB mixers, heterodyne receiver, stress-less membrane, coupling efficiency, submillimeter-waves frequency, low-cost space applications |
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We report in this paper a new concept for 2.7 THz superconducting Niobium nitride (NbN) Hot-Electron Bolometer mixer (HEB). The membrane process was developped for space telecommnunication applications a few years ago and the HEB mixer concept is now considered as the best choice for low-noise submillimeter-wave frequency heterodyne receivers. The idea is then to join these two technologies. The novel fabrication scheme is to fabricate a NbN HEB mixer on a 1 μm thick stress-less Si3N4/SiO2 membrane. This seems to present numerous improvements concerning : use at higher RF frequencies, power coupling efficiency, HEB mixer sensitivity, noise temperature, and space applications. This work is to be continued within the framework of an ESA TRP project, a 2.7 THz heterodyne camera with numerous applications including a SOFIA airborne receiver. This paper presents the whole fabrication process, the validation tests and preliminary results. Membrane-based HEB mixer theory is currently being investigated and further tests such as heterodyne and Fourier transform spectrometry measurement are planed shortly. |
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SPIE |
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Chiao, J.-C.; Varadan, V.K.; Cané, C. |
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Smart Sensors, Actuators, and MEMS |
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1520 |
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Zhang, J.; Pearlman, A.; Slysz, W.; Verevkin, A.; Sobolewski, R.; Wilsher, K.; Lo, W.; Okunev, O.; Korneev, A.; Kouminov, P.; Chulkova, G.; Gol’tsman, G. N. |
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A superconducting single-photon detector for CMOS IC probing |
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Conference Article |
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2003 |
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Proc. 16-th LEOS |
Abbreviated Journal |
Proc. 16-th LEOS |
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2 |
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602-603 |
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NbN SSPD, SNSPD |
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In this paper, a novel, time-resolved, NbN-based, superconducting single-photon detector (SSPD) has been developed for probing CMOS integrated circuits (ICs) using photon emission timing analysis (PETA). |
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The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003. |
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1510 |
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Author |
Gol'tsman, G. N.; Loudkov, D. N. |
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Terahertz superconducting hot-electron bolometer mixers and their application in radio astronomy |
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Journal Article |
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2003 |
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Radiophys. Quant. Electron. |
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46 |
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8/9 |
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604-617 |
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NbN HEB mixers |
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We review the latest developments, research, and radioastronomy applications of hot-electron bolometer (HEB) mixers operated in the terahertz waveband. The physical principles of operation of terahertz HEB mixers are presented, their manufacturing from ultrathin NbN films, the main HEB-mixer parameters and their measurement techniques are discussed, and practical terahertz radioastronomy projects based on heterodyne receivers with HEB mixers are considered. |
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0033-8443 |
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UDC 537.312.62 |
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472 |
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Myasnikova, S. E.; Parshin, V.V.; van't Klooster, K.; Valsecchi, G. |
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Reflectivity of antenna and mirrors reflectors at 110 and 200 GHz |
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Conference Article |
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2003 |
Publication |
Proc. 4th international conference on antenna theory and techniques |
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2 |
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624- 627 |
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mirror, reflection index, emissivity, reflectivity, mirror, Fabry-Perot interferometer, subterahertz, subTHz |
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Reflectivity (reflection loss) investigations of nickel samples with different types of surface finish, with and without rhodium coating, have been carried out in the 110-200 GHz frequency range on an installation developed in the Applied Physics Institute of Russia. The reflectivity measurements of high quality silver coated and gold coated mirrors are also presented. The reflectivity (reflection loss) investigations of some carbon fibre samples with and without aluminium coating have been made. Results are interesting, in view of the anisotropy of the carbon fibre material. |
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582 |
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Vakhtomin, Y. B.; Finkel, M. I.; Antipov, S. V.; Smirnov, K. V.; Kaurova, N. S.; Drakinskii, V. N.; Voronov, B. M.; Gol’tsman, G. N. |
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The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer |
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Journal Article |
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2003 |
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J. of communications technol. & electronics |
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J. of communications technol. & electronics |
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48 |
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6 |
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671-675 |
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NbN HEB mixers |
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Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer. |
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MAIK Nauka/Interperiodica, Birmingham, AL |
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1064-2269 |
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https://elibrary.ru/item.asp?id=17302119 (Полоса преобразования смесителей на эффекте разогрева электронов в ультратонких пленках NbN на подложках из Si с подслоем MgO) |
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Vakhtomin2003 |
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1522 |
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Tong, C.-Y. E.; Meledin, D.; Loudkov, D.; Blundell, R.; Erickson, N.; Kawamura, J.; Mehdi, I.; Gol’tsman, G. |
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A 1.5 THz Hot-Electron Bolometer mixer operated by a planar diode based local oscillator |
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Conference Article |
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2003 |
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IEEE MTT-S Int. Microwave Symp. Digest |
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IEEE MTT-S Int. Microwave Symp. Digest |
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2 |
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751-754 |
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waveguide NbN HEB mixers |
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We have developed a 1.5 THz superconducting NbN Hot-Electron Bolometer mixer. It is operated by an all-solid-state Local Oscillator comprising of a cascade of 4 planar doublers following an MMIC based W-band power amplifier. The threshold available pump power is estimated to be 1 /spl mu/W. |
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Philadelphia, PA, USA |
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1516 |
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Zhang, J.; Boiadjieva, N.; Chulkova, G.; Deslandes, H.; Gol'tsman, G. N.; Korneev, A.; Kouminov, P.; Leibowitz, M.; Lo, W.; Malinsky, R.; Okunev, O.; Pearlman, A.; Slysz, W.; Smirnov, K.; Tsao, C.; Verevkin, A.; Voronov, B.; Wilsher, K.; Sobolewski, R. |
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Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors |
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2003 |
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Electron. Lett. |
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Electron. Lett. |
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39 |
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14 |
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1086-1088 |
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NbN SSPD, SNSPD, applications |
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The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed. |
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0013-5194 |
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1512 |
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Amato, Michael J.; Benford, Dominic J.; Moseley, Harvey S.; Juan Roman |
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An engineering concept and enabling technologies for a large single aperture far-infrared observatory (SAFIR) |
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2003 |
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Proc. SPIE |
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4850 |
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1120-1131 |
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RPLAB @ s @ sun_shield_SAFIR_SPIE_2003 |
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339 |
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Sobolewski, R.; Verevkin, A.; Gol'tsman, G.N.; Lipatov, A.; Wilsher, K. |
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Ultrafast superconducting single-photon optical detectors and their applications |
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2003 |
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IEEE Trans. Appl. Supercond. |
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13 |
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2 |
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1151-1157 |
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NbN SSPD, SNSPD |
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We present a new class of ultrafast single-photon detectors for counting both visible and infrared photons. The detection mechanism is based on photon-induced hotspot formation, which forces the supercurrent redistribution and leads to the appearance of a transient resistive barrier across an ultrathin, submicrometer-width, superconducting stripe. The devices were fabricated from 3.5-nm- and 10-nm-thick NbN films, patterned into <200-nm-wide stripes in the 4 /spl times/ 4-/spl mu/m/sup 2/ or 10 /spl times/ 10-/spl mu/m/sup 2/ meander-type geometry, and operated at 4.2 K, well below the NbN critical temperature (T/sub c/=10-11 K). Continuous-wave and pulsed-laser optical sources in the 400-nm-to 3500-nm-wavelength range were used to determine the detector performance in the photon-counting mode. Experimental quantum efficiency was found to exponentially depend on the photon wavelength, and for our best, 3.5-nm-thick, 100-/spl mu/m/sup 2/-area devices varied from >10% for 405-nm radiation to 3.5% for 1550-nm photons. The detector response time and jitter were /spl sim/100 ps and 35 ps, respectively, and were acquisition system limited. The dark counts were below 0.01 per second at optimal biasing. In terms of the counting rate, jitter, and dark counts, the NbN single-photon detectors significantly outperform their semiconductor counterparts. Already-identified applications for our devices range from noncontact testing of semiconductor CMOS VLSI circuits to free-space quantum cryptography and communications. |
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1051-8223 |
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509 |
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Author |
Zwiller, V.; Aichele, T.; Seifert, W.; Persson, J.; Benson, O. |
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Title |
Generating visible single photons on demand with single InP quantum dots |
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Journal Article |
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2003 |
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Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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82 |
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10 |
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1509-1511 |
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Keywords |
single photon, quantum dot, InP |
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0003-6951 |
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503 |
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Hirata, A.; Harada, M.; Nagatsuma, T. |
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Title |
120-GHz wireless link using photonic techniques for generation, modulation, and emission of millimeter-wave signals |
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Journal Article |
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2003 |
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J. of Lightwave Technology |
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21 |
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10 |
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2145-2153 |
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subterahartz terahertz THz communications |
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Abstract |
We present a wireless link system that uses millimeter-wave (MMW) photonic techniques. The photonic transmitter in the wireless link consists of an optical 120-GHz MMW generator, an optical modulator, and a high-power photonic MMW emitter. A uni-traveling carrier photodiode (UTC-PD) was used as the photonic emitter in order to eliminate electronic MMW amplifiers. We evaluated the dependence of UTC-PD output power on its transit-time limited bandwidth and its CR-time constant limited bandwidth, and employed a UTC-PD with the highest output power for the photonic emitter. As for the MMW generation, we developed a 120-GHz optical MMW generator that generates a pulse train and one that generates a sinusoidal signal. The UTC-PD output power generated by a narrow pulse train was higher than that generated by sinusoidal signals under the same average optical power condition, which contributes to reducing the photocurrent of the photonic emitter. We have experimentally demonstrated that the photonic transmitter can transmit data at up to 3.0 Gb/s. The wireless link using the photonic transmitter can be applied to optical gigabit Ethernet signals. |
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