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Goltsman, G., Korneev, A., Divochiy, A., Minaeva, O., Tarkhov, M., Kaurova, N., et al. (2009). Ultrafast superconducting single-photon detector. J. Modern Opt., 56(15), 1670–1680.
Abstract: The state-of-the-art of the NbN nanowire superconducting single-photon detector technology (SSPD) is presented. The SSPDs exhibit excellent performance at 2 K temperature: 30% quantum efficiency from visible to infrared, negligible dark count rate, single-photon sensitivity up to 5.6 µm. The recent achievements in the development of GHz counting rate devices with photon-number resolving capability is presented.
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Гольцман, Г. Н., Птицина, Н. Г., & Ригер, Е. Р. (1984). Оже-рекомбинация свободных носителей на мелких донорах в германии. Физика и техника полупроводников, 18(9), 1684–1686.
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Lipatov, A., Okunev, O., Smirnov, K., Chulkova, G., Korneev, A., Kouminov, P., et al. (2002). An ultrafast NbN hot-electron single-photon detector for electronic applications. Supercond. Sci. Technol., 15(12), 1689–1692.
Abstract: We present the latest generation of our superconducting single-photon detector (SPD), which can work from ultraviolet to mid-infrared optical radiation wavelengths. The detector combines a high speed of operation and low jitter with high quantum efficiency (QE) and very low dark count level. The technology enhancement allows us to produce ultrathin (3.5 nm thick) structures that demonstrate QE hundreds of times better, at 1.55 μm, than previous 10 nm thick SPDs. The best, 10 × 10 μm2, SPDs demonstrate QE up to 5% at 1.55 μm and up to 11% at 0.86 μm. The intrinsic detector QE, normalized to the film absorption coefficient, reaches 100% at bias currents above 0.9 Ic for photons with wavelengths shorter than 1.3 μm.
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Гершензон, Е. М., Семенов, И. Т., & Фогельсон, М. С. (1985). Спин-решеточная релаксация доноров фосфора в кремнии при одноосной деформации образца. Физика и техника полупроводников, 19(9), 1696–1698.
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Smirnov, A. V., Karmantsov, M. S., Smirnov, K. V., Vakhtomin, Y. B., Masterov, D. V., Tarkhov, M. A., et al. (2012). Terahertz response of thin-film YBCO bolometers. Tech. Phys., 57(12), 1716–1719.
Abstract: The bolometric response of high-temperature thin-film YBCO superconducting detectors to an electromagnetic radiation with a frequency of 2.5 THz is measured for the first time. The minimum value of the noise-equivalent power of the detectors is 3.5 × 10−9 W/Hz−−−√. The feasibility of further increasing the sensitivity of the detectors is discussed.
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Akhmadishina, K. F., Bobrinetskiy, I. I., Komarov, I. A., Malovichko, A. M., Nevolin, V. K., Fedorov, G. E., et al. (2015). Fast-response biological sensors based on single-layer carbon nanotubes modified with specific aptamers. Semicond., 49(13), 1749–1753.
Abstract: The possibility of the fabrication of a fast-response biological sensor based on a composite of single-layer carbon nanotubes and aptamers for the specific detection of proteins is shown. The effect of modification of the surface of the carbon nanotubes on the selectivity and sensitivity of the sensors is investigated. It is shown that carboxylated nanotubes have a better selectivity for detecting thrombin.
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Zhang, W., Li, N., Jiang, L., Miao, W., Lin, Z. - H., Yao, Q. - J., et al. (2007). Noise behaviour of a THz superconducting hot-electron bolometer mixer. Chinese Phys. Lett., 24(6), 1778–1781.
Abstract: A quasi-optical superconducting NbN hot-electron bolometer (HEB) mixer is measured in the frequency range of 0.5–2.5 THz for understanding of the frequency dependence of noise temperature of THz coherent detectors. It has been found that noise temperature increasing with frequency is mainly due to the coupling loss between the quasi-optical planar antenna and the superconducting HEB bridge when taking account of non-uniform distribution of high-frequency current. With the coupling loss corrected, the superconducting HEB mixer demonstrates a noise temperature nearly independent of frequency.
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Гершензон, Е. М., Литвак-Горская, Л. Б., & Рабинович, Р. И. (1983). Отрицательное магнитосопротивление в случае проводимости по верхней зоне Хаббарда. Физика и техника полупроводников, 17(10), 1873–1876.
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Воеводин, Е. И., Гершензон, Е. М., Гольцман, Г. Н., & Птицина, Н. Г. (1990). Влияние магнитного поля на захват свободных носителей мелкими примесями в Ge. Физика и техника полупроводников, 24(10), 1881–1883.
Abstract: Цель настоящей работы — измерение кинетики примесной фотопроводимости в квантующих магнитных полях.
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Банная, В. Ф., Веселова, Л. И., & Гершензон, Е. М. (1983). Об одном способе определения концентрации глубоких примесей в германии. Физика и техника полупроводников, 17(10), 1896–1898.
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Danerud, M., Winkler, D., Lindgren, M., Zorin, M., Trifonov, V., Karasik, B. S., et al. (1994). Nonequilibrium and bolometric photoresponse in patterned YBa2Cu3O7−δ thin films. J. Appl. Phys., 76(3), 1902–1909.
Abstract: Epitaxial laser deposited YBa2Cu3O7−δ films of ∼50 nm thickness were patterned into detectors consisting of ten parallel 1 μm wide strips in order to study nonequilibrium and bolometric effects. Typically, the patterned samples had critical temperatures around 86 K, transition widths around 2 K and critical current densities above 1×106A/cm2 at 77 K. Pulsed laser measurements at 0.8 μm wavelength (17 ps full width at half maximum) showed a ∼30 ps response, attributed to electron heating, followed by a slower bolometric decay. Amplitude modulation in the band fmod=100 kHz–10 GHz of a laser with wavelength λ=0.8 μm showed two different thermal relaxations in the photoresponse. Phonon escape from the film (∼3 ns) is the limiting process, followed by heat diffusion in the substrate. Similar relaxations were also seen for λ=10.6 μm. The photoresponse measurements were made with the film in the resistive state and extended into the normal state. These states were created by supercritical bias currents. Measurements between 75 and 95 K (i.e., from below to above Tc) showed that the photoresponse was proportional to dR/dT for fmod=1 MHz and 4 GHz. The fast response is limited by the electron‐phonon scattering time, estimated to 1.8 ps from experimental data. The responsivity both at 0.8 and 10.6 μm wavelength was ∼1.2 V/W at fmod=1 GHz and the noise equivalent power was calculated to 1.5×10−9 WHz−1/2 for the fast response.
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Budyanskij, M. Y., Sejdman, L. A., Voronov, B. M., & Gubkina, T. O. (1992). Increase of reproducibility in production of superconducting thin films of niobium nitride. Sverkhprovodimost': Fizika, Khimiya, Tekhnika, 5(10), 1950–1954.
Abstract: Technique to control the composition of gas medium in the reactive magnetron discharge and the composition of the deposited films of niobium nitride using electrical parameters of discharge only, in particular, by δU = Up – Uar value at contant stabilized discharge current is described. Technique to select optimal condition for deposition of niobium nitride films when the films have composition meeting chemical formula, is suggested. Thin films of niobium nitride with up to 7 nm thickness and with rather high temperature of transition into superconducting state Tk > 10 K) and with low width of transition (δ < 0.6 K), are obtained. It is determined, that substrate material and dielectric sublayer do not affect. Tk value, while difference in coefficients of thermal expansion of substrate and of film affects δTk value.
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Baselmans, J. J. A., Hajenius, M., Gao, J. R., Klapwijk, T. M., de Korte, P. A. J., Voronov, B., et al. (2004). Doubling of sensitivity and bandwidth in phonon cooled hot electron bolometer mixers. Appl. Phys. Lett., 84(11), 1958–1960.
Abstract: We demonstrate that the performance of NbN lattice cooled hot electron bolometer mixers depends strongly on the interface quality between the bolometer and the contact structure. We show experimentally that both the receiver noise temperature and the gain bandwidth can be improved by more than a factor of 2 by cleaning the interface and adding an additional superconducting interlayer to the contact pad. Using this we obtain a double sideband receiver noise temperature TN,DSB=950 K
at 2.5 THz and 4.3 K, uncorrected for losses in the optics. At the same bias point, we obtain an IF gain bandwidth of 6 GHz.
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Gol'tsman, G. N., Kouminov, P., Goghidze, I., & Gershenzon, E. M. (1994). Nonequilibrium kinetic inductive response of YBaCuO thin films to low-power laser pulses. Phys. C: Supercond., 235-240, 1979–1980.
Abstract: Transient non-equilibrium kinetic inductive voltage response of YBaCuO thin films to 20 ps pulses of YAG:Nd laser radiation with 0.63 μm and 1.5 μm wavelength has been revealed. By increasing the sensitivity of 100 ps resolution time registration system and diminishing light intensity (fluence 0.1-1 μJ2/cm2) and transport current (density j≤105 A/cm2) we observed a perculiar bipolar signal form with nearly equal amplitudes of each sign. The integration of the kinetic inductive response over time gives the result which is qualitatively of the same form as the response in the resistive and normal states: nonequilibrium picosecond scale component followed by bolometric nanosecond. Nonequilibrium response is interpreted as suppression of order parameter by excess of quasiparticles followed by a change in resistance in the resistive state and kinetic inductance in superconductive state.
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Karasik, B. S., Milostnaya, I. I., Zorin, M. A., Elantev, A. I., Gol'tsman, G. N., & Gershenzon, E. M. (1994). Subnanosecond S-N and N-S switching of YBCO film induced by current pulse. Phys. C: Supercond., 235-240, 1981–1982.
Abstract: A transition of YBCO bridge 60 nm thick from superconducting to normal state induced by an abrupt current step has been studied. A subnanosecond stage has been observed during both S-N and N-S transition. The data obtained can be explained by hot-electron phenomena. On the basis of experimental results a prediction of picosecond switch performance has been made.
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