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Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М. |
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Title |
Об одном способе определения концентрации глубоких примесей в германии |
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1983 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
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17 |
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10 |
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1896-1898 |
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Keywords |
Ge, deep impurities |
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1762 |
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Author |
Воеводин, Е. И.; Гершензон, Е. М.; Гольцман, Г. Н.; Птицина, Н. Г. |
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Title |
Влияние магнитного поля на захват свободных носителей мелкими примесями в Ge |
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Journal Article |
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Year |
1990 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
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Volume |
24 |
Issue |
10 |
Pages |
1881-1883 |
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Keywords |
impurities, photoconductivity, Ge, capture of free carriers, magnetic field |
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Abstract |
Цель настоящей работы — измерение кинетики примесной фотопроводимости в квантующих магнитных полях. |
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Russian |
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1755 |
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Гершензон, Е. М.; Литвак-Горская, Л. Б.; Рабинович, Р. И. |
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Title |
Отрицательное магнитосопротивление в случае проводимости по верхней зоне Хаббарда |
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Journal Article |
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Year |
1983 |
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Физика и техника полупроводников |
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Физика и техника полупроводников |
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Volume |
17 |
Issue |
10 |
Pages |
1873-1876 |
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Keywords |
compensated n-InSb, Hubbard upper zone conductivity, negative magnetoresistance |
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1763 |
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Crowe, T. W.; Mattauch, R. J.; Roser, H. P.; Bishop, W. L.; Peatman, W. C. B.; Liu, X. |
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Title |
GaAs Schottky diodes for THz mixing applications |
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1992 |
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Proc. IEEE |
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80 |
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11 |
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1827-1841 |
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245 |
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Author |
Андреев, А. Ф. |
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Year |
1964 |
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ЖЭТФ |
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46 |
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1823-1827 |
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MSPU @ s @ Andreev_reflection_rus |
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217 |
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