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Годунова, Е. К., & Левин, В. И. (1966). Некоторые качественные вопросы теплопроводности. Ж. вычисл. матем. и матем. физ., 6(6), 1097–1103.
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Tong, C. Y. E., Chen, L., & Blundell, R. (1997). Theory of distributed mixing and amplification in a superconductingquasi-particle nonlinear transmission line. IEEE Trans. Microw. Theory Techn., 45(7), 1086–1092.
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Zhang, J., Boiadjieva, N., Chulkova, G., Deslandes, H., Gol'tsman, G. N., Korneev, A., et al. (2003). Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors. Electron. Lett., 39(14), 1086–1088.
Abstract: The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed.
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Pfleegor, R. L., & Mandel, L. (1967). Interference of independent photon beams. Phys. Rev., 159(5), 1084–1088.
Abstract: Interference effects produced by the superposition of the light beams from two independent single-mode lasers have been investigated experimentally. It is found that interference takes place even under conditions in which the light intensities are so low that, with high probability, one photon is absorbed before the next one is emitted by one or the other source. Since the average number of registered photons per trial was only about 10, photon correlation techniques were required to demonstrate the interference. The interpretation of the experiment, and the question whether it demonstrates interference between two photons, are discussed.
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Morozov, D. V., Smirnov, K. V., Smirnov, A. V., Lyakhov, V. A., & Goltsman, G. N. (2005). A millimeter-submillimeter phonon-cooled hot-electron bolometer mixer based on two-dimensional electron gas in an AlGaAs/GaAs heterostructure. Semicond., 39(9), 1082–1086.
Abstract: Experimental results obtained by studying the main characteristics of a millimeter-submillimeter wave mixer based on the hot-electron effect in a two-dimensional electron gas in a AlGaAs/GaAs heterostructure with a phonon-scattering cooling mechanism for charge carriers are reported. The gain bandwidth of the mixer is 4 GHz, the internal conversion losses are 13 dB, and the optimum local-oscillator power is 0.5 μW (for a mixer area of 1 μm2). It is shown that a millimeter-submillimeter-wave receiver with a noise temperature of 1900 K can be developed on the basis of a AlGaAs/GaAs mixer. This mixer also appears to be promising for use in array receiver elements.
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