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Author Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G. url  openurl
  Title Capture of photoexcited carriers by shallow impurity centers in germanium Type Journal Article
  Year 1979 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 50 Issue 4 Pages (down) 728-734  
  Keywords Ge, photoexcited carriers, shallow impurity centers  
  Abstract Measurements were made of the lifetimes rf of free carriers and the relaxation time 7, of the submillimeter impurity photoconductivity when carriers are captured by attracting shallow donors and acceptom in Ge. It is nod that in samples with capture-center concentration N,Z 10"cm-' the relaxation time 7, greatly exceeds rf in the temperature range 4.2-12 K. The measured values of 7,- are compared with the calculation of cascade recombination by the classical model. To evaluate the data on T,, the distinguishing features of this model are considered for the nonstationary case. The substantial difference betweea the values of rf and T, is attributed to re-emission of the carriers from the excited states of the shallow impurities.  
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  Notes Approved no  
  Call Number Serial 1720  
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Author Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. url  openurl
  Title Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures Type Journal Article
  Year 1995 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 61 Issue 7 Pages (down) 591-595  
  Keywords 2DEG, AlGaAs/GaAs heterostructures  
  Abstract The energy relaxation time of 2D electrons, Te, has been measured under quasiequilibrium conditions in AlGaAs—GaAs heterojunctions over the temperature range T= 1.5—20 K. At T> 4 K, Te depends only weakly on the temperature, while at T< 4 K 7;'(T) there is a dependence fr; lNT. A linear dependence 7: 1 (T) in the Bloch—-Grfineisen temperature region (T< 5 K) is unambiguous evidence that a piezoacoustic mechanism of an electron—phonon interaction is predominant in the inelastic scattering of electrons. The values of T6 in this temperature range agree very accurately with theoretical results reported by Karpus [Sov. Phys. Semicond. 22 (1988)]. At higher temperatures, where scat—tering by deformation acoustic phonons becomes substantial, there is a significant discrepancy between the experimental and theoretical re-sults.  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1624  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. url  openurl
  Title Cross section for binding of free carriers into excitons in germanium Type Journal Article
  Year 1981 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 33 Issue 11 Pages (down) 574  
  Keywords Ge, excitons, photoconductivity  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1718  
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Author Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. url  openurl
  Title Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field Type Journal Article
  Year 1977 Publication Sov. Phys. JETP Abbreviated Journal Sov. Phys. JETP  
  Volume 45 Issue 3 Pages (down) 555-565  
  Keywords Ge, GaAs, magnetic field, donors, energy spectrum  
  Abstract The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations.  
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  Notes Approved no  
  Call Number Serial 1728  
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Author Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. url  openurl
  Title Carrier lifetime in excited states of shallow impurities in germanium Type Journal Article
  Year 1977 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 25 Issue 12 Pages (down) 539-543  
  Keywords Ge, shallow impurities, excited states  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1726  
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