|   | 
Details
   web
Records
Author Zhang, J.; Boiadjieva, N.; Chulkova, G.; Deslandes, H.; Gol'tsman, G. N.; Korneev, A.; Kouminov, P.; Leibowitz, M.; Lo, W.; Malinsky, R.; Okunev, O.; Pearlman, A.; Slysz, W.; Smirnov, K.; Tsao, C.; Verevkin, A.; Voronov, B.; Wilsher, K.; Sobolewski, R.
Title Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors Type Journal Article
Year 2003 Publication Electron. Lett. Abbreviated Journal Electron. Lett.
Volume 39 Issue 14 Pages (down) 1086-1088
Keywords NbN SSPD, SNSPD, applications
Abstract The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0013-5194 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1512
Permanent link to this record
 

 
Author Smirnov, K.; Korneev, A.; Minaeva, O.; Divochiy, A.; Tarkhov, M.; Ryabchun, S.; Seleznev, V.; Kaurova, N.; Voronov, B.; Gol'tsman, G.; Polonsky, S.
Title Ultrathin NbN film superconducting single-photon detector array Type Conference Article
Year 2007 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 61 Issue Pages (down) 1081-1085
Keywords SSPD array
Abstract We report on the fabrication process of the 2 × 2 superconducting single-photon detector (SSPD) array. The SSPD array is made from ultrathin NbN film and is operated at liquid helium temperatures. Each detector is a nanowire-based structure patterned by electron beam lithography process. The advances in fabrication technology allowed us to produce highly uniform strips and preserve superconducting properties of the unpatterned film. SSPD exhibit up to 30% quantum efficiency in near infrared and up to 1% at 5-μm wavelength. Due to 120 MHz counting rate and 18 ps jitter, the time-domain multiplexing read-out is proposed for large scale SSPD arrays. Single-pixel SSPD has already found a practical application in non-invasive testing of semiconductor very-large scale integrated circuits. The SSPD significantly outperformed traditional single-photon counting avalanche diodes.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6588 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 408
Permanent link to this record
 

 
Author Cherednichenko, S.; Yagoubov, P.; Il'in, K.; Gol'tsman, G.; Gershenzon, E.
Title Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers Type Conference Article
Year 1997 Publication Proc. 27th Eur. Microwave Conf. Abbreviated Journal
Volume 2 Issue Pages (down) 972-977
Keywords HEB mixer, fabrication process
Abstract The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 nm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 um wide and 2 um long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.2 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature.
Address Jerusalem, Israel
Corporate Author Thesis
Publisher IEEE Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference 27th Eur. Microwave Conf.
Notes Approved no
Call Number Serial 1075
Permanent link to this record
 

 
Author Kroug, M.; Cherednichenko, S.; Merkel, H.; Kollberg, E.; Voronov, B.; Gol'tsman, G.; Hübers, H. W.; Richter, H.
Title NbN hot electron bolometric mixers for terahertz receivers Type Journal Article
Year 2001 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 11 Issue 1 Pages (down) 962-965
Keywords NbN HEB mixers
Abstract Sensitivity and gain bandwidth measurements of phonon-cooled NbN superconducting hot-electron bolometer mixers are presented. The best receiver noise temperatures are: 700 K at 1.6 THz and 1100 K at 2.5 THz. Parylene as an antireflection coating on silicon has been investigated and used in the optics of the receiver. The dependence of the mixer gain bandwidth (GBW) on the bias voltage has been measured. Starting from low bias voltages, close to operating conditions yielding the lowest noise temperature, the GBW increases towards higher bias voltages, up to three times the initial value. The highest measured GBW is 9 GHz within the same bias range the noise temperature increases by a factor of two.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 312
Permanent link to this record
 

 
Author Jukna, A.; Kitaygorsky, J.; Pan, D.; Cross, A.; Perlman, A.; Komissarov, I.; Sobolewski, R.; Okunev, O.; Smirnov, K.; Korneev, A.; Chulkova, G.; Milostnaya, I.; Voronov, B.; Gol'tsman, G.
Title Dynamics of hotspot formation in nanostructured superconducting stripes excited with single photons Type Journal Article
Year 2008 Publication Acta Physica Polonica A Abbreviated Journal Acta Physica Polonica A
Volume 113 Issue 3 Pages (down) 955-958
Keywords SSPD, SNSPD
Abstract Dynamics of a resistive hotspot formation by near-infrared-wavelength single photons in nanowire-type superconducting NbN stripes was investigated. Numerical simulations of ultrafast thermalization of photon-excited nonequilibrium quasiparticles, their multiplication and out-diffusion from a site of the photon absorption demonstrate that 1.55 μm wavelength photons create in an ultrathin, two-dimensional superconducting film a resistive hotspot with the diameter which depends on the photon energy, and the nanowire temperature and biasing conditions. Our hotspot model indicates that under the subcritical current bias of the 2D stripe, the electric field penetrates the superconductor at the hotspot boundary, leading to suppression of the stripe superconducting properties and accelerated development of a voltage transient across the stripe.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1414
Permanent link to this record