| Records |
| Author |
Florya, I. N.; Korneeva, Y. P.; Sidorova, M. V.; Golikov, A. D.; Gaiduchenko, I. A.; Fedorov, G. E.; Korneev, A. A.; Voronov, B. M.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. |
| Title |
Energy relaxtation and hot spot formation in superconducting single photon detectors SSPDs |
Type |
Conference Article |
| Year |
2015 |
Publication |
EPJ Web of Conferences |
Abbreviated Journal |
EPJ Web of Conferences |
| Volume |
103 |
Issue |
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Pages |
10004 (1 to 2) |
| Keywords |
SSPD, SNSPD |
| Abstract |
We have studied the mechanism of energy relaxation and resistive state formation after absorption of a single photon for different wavelengths and materials of single photon detectors. Our results are in good agreement with the hot spot model. |
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2100-014X |
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1351 |
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Belosevich, V. V.; Gayduchenko, I. A.; Titova, N. A.; Zhukova, E. S.; Goltsman, G. N.; Fedorov, G. E.; Silaev, A. A. |
| Title |
Response of carbon nanotube film transistor to the THz radiation |
Type |
Conference Article |
| Year |
2018 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
| Volume |
195 |
Issue |
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Pages |
05012 (1 to 2) |
| Keywords |
field-effect transistor, FET, carbon nanotube, CNT |
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2100-014X |
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1317 |
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Tretyakov, I.; Kaurova, N.; Raybchun, S.; Goltsman, G. N.; Silaev, A. A. |
| Title |
Technology for NbN HEB based multipixel matrix of THz range |
Type |
Conference Article |
| Year |
2018 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
| Volume |
195 |
Issue |
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Pages |
05011 |
| Keywords |
NbN HEB |
| Abstract |
The influence of homogeneity disorder degree of the thin superconducting NbN film across of Si wafer on characteristics of the Hot Electron Bolometers (HEB) has been investigated. Our experiments have been carried out near the superconducting transition and far below it. The high homogeneity disorder degree of the NbN film has been achieved by preparing the Si substrate surface. The fabricated HEBs all have almost identical R (T) characteristics with a dispersion of Tc and the normal resistance R300 of not more than 0.15K and 2 Ω, respectively. The quality of the devises allows us to demonstrate clearly the influence of non-equilibrium processes in the S’SS’ system on the device performance. Our fabrication technology also allows creating multiplex heterodyne and direct detector matrices based the HEB devices. |
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2100-014X |
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1318 |
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Elezov, M. S.; Ozhegov, R. V.; Goltsman, G. N.; Makarov, V.; Vinogradov, E. A.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. |
| Title |
Development of the experimental setup for investigation of latching of superconducting single-photon detector caused by blinding attack on the quantum key distribution system |
Type |
Conference Article |
| Year |
2017 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
| Volume |
132 |
Issue |
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Pages |
01004 (1 to 2) |
| Keywords |
QKD, SSPD, SNSPD |
| Abstract |
Recently bright-light control of the SSPD has been demonstrated. This attack employed a “backdoor” in the detector biasing scheme. Under bright-light illumination, SSPD becomes resistive and remains “latched” in the resistive state even when the light is switched off. While the SSPD is latched, Eve can simulate SSPD single-photon response by sending strong light pulses, thus deceiving Bob. We developed the experimental setup for investigation of a dependence on latching threshold of SSPD on optical pulse length and peak power. By knowing latching threshold it is possible to understand essential requirements for development countermeasures against blinding attack on quantum key distribution system with SSPDs. |
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2100-014X |
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no |
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1327 |
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Fedorov, G. E.; Gaiduchenko, I. A.; Golikov, A. D.; Rybin, M. G.; Obraztsova, E. D.; Voronov, B. M.; Coquillat, D.; Diakonova, N.; Knap, W.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. |
| Title |
Response of graphene based gated nanodevices exposed to THz radiation |
Type |
Conference Article |
| Year |
2015 |
Publication |
EPJ Web of Conferences |
Abbreviated Journal |
EPJ Web of Conferences |
| Volume |
103 |
Issue |
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Pages |
10003 (1 to 2) |
| Keywords |
graphene field-effect transistor, FET |
| Abstract |
In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors. |
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2100-014X |
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no |
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1350 |
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