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Author Smirnov, E.; Golikov, A.; Zolotov, P.; Kovalyuk, V.; Lobino, M.; Voronov, B.; Korneev, A.; Goltsman, G.
Title Superconducting nanowire single-photon detector on lithium niobate Type Conference Article
Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1124 Issue Pages 051025
Keywords SSPD, SNSPD, lithium niobate, LN
Abstract We demonstrate superconducting niobium nitride nanowires folded on top of lithium niobate substrate. We report of 6% system detection efficiency at 20 s−1 dark count rate at telecommunication wavelength (1550 nm). Our results shown great potential for the use of NbN nanowires in the field of linear and nonlinear integrated quantum photonics.
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ISSN (up) 1742-6588 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1194
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Author Zubkova, E.; An, P.; Kovalyuk, V.; Korneev, A.; Ferrari, S.; Pernice, W.; Goltsman, G.
Title Optimization of contra-directional coupler based on silicon nitride Bragg rib waveguide Type Conference Article
Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1124 Issue Pages 051048
Keywords Bragg waveguide, Si3N4
Abstract We report on the development and fabrication of a contra-directional coupler based on the Bragg waveguide on Si3N4 platform. Transmitted and reflected by the contra-directional coupler spectra were measured. The reflected spectra exactly matches the one notched by the main channel of the coupler. Losses are about 3dB, coupling to the directing branch of the coupler is practically lossless. FWHM of the transmitted (reflected) spectra is 3.46 nm.
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ISSN (up) 1742-6588 ISBN Medium
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Notes Approved no
Call Number Serial 1195
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Author Prokhodtsov, A.; An, P.; Kovalyuk, V.; Zubkova, E.; Golikov, A.; Korneev, A.; Ferrari, S.; Pernice, W.; Goltsman, G.
Title Optimization of on-chip photonic delay lines for telecom wavelengths Type Conference Article
Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1124 Issue Pages 051052
Keywords optical delay lines
Abstract In this work, we experimentally studied optical delay lines on silicon nitride platform for telecomm wavelength (1550 nm). We modeled the group delay time and fabricated spiral optical delay lines with different waveguide widths and radii as well as measured their transmission. For the half etched rib waveguides we achieved the losses in the range of 3 dB/cm.
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ISSN (up) 1742-6588 ISBN Medium
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Notes Approved no
Call Number Serial 1196
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Author Kovalyuk, V.; Kahl, O.; Ferrari, S.; Vetter, A.; Lewes-Malandrakis, G.; Nebel, C.; Korneev, A.; Goltsman, G.; Pernice, W.
Title On-chip single-photon spectrometer for visible and infrared wavelength range Type Conference Article
Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1124 Issue Pages 051045
Keywords single-photon spectrometer
Abstract Here we show our latest progress in the field of a single-photon spectrometer for the visible and infrared wavelengths ranges implementation. We consider three different on-chip approaches: a coherent spectrometer with a low power of the heterodyne, a coherent spectrometer with a high power of the heterodyne, and an eight-channel single-photon spectrometer for direct detection. Along with high efficiency, spectrometers show high detection efficiency and temporal resolution through the use of waveguide integrated superconducting nanowire single-photon detectors.
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ISSN (up) 1742-6588 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1197
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Author Zolotov, P. I.; Divochiy, A. V.; Vakhtomin, Y. B.; Lubenchenko, A. V.; Morozov, P. V.; Shurkaeva, I. V.; Smirnov, K. V.
Title Influence of sputtering parameters on the main characteristics of ultra-thin vanadium nitride films Type Conference Article
Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1124 Issue Pages 051030
Keywords SSPD, SNSPD, VN
Abstract We researched the relation between deposition and ultra-thin VN films parameters. To conduct the experimental study we varied substrate temperature, Ar and N2 partial pressures and deposition rate. The study allowed us to obtain the films with close to the bulk values transition temperatures and implement such samples in order to fabricate superconducting single-photon detectors.
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ISSN (up) 1742-6588 ISBN Medium
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Notes Approved no
Call Number Serial 1228
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Author Romanov, N. R.; Zolotov, P. I.; Vakhtomin, Y. B.; Divochiy, A. V.; Smirnov, K. V.
Title Electron diffusivity measurements of VN superconducting single-photon detectors Type Conference Article
Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1124 Issue Pages 051032
Keywords SSPD, SNSPD, VN
Abstract The research of ultrathin vanadium nitride (VN) films as a promising candidate for superconducting single-photon detectors (SSPD) is presented. The electron diffusivity measurements are performed for such devices. Devices that were fabricated out from 9.9 nm films had diffusivity coefficient of 0.41 cm2/s and from 5.4 nm – 0.54 cm2/s. Obtained values are similar to other typical SSPD materials. The diffusivity that increases along with decreasing of the film thickness is expected to allow fabrication of the devices with improved characteristics. Fabricated VN SSPDs showed prominent single-photon response in the range 0.9-1.55 µm.
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ISSN (up) 1742-6588 ISBN Medium
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Notes Approved no
Call Number Serial 1229
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Author Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D.
Title Graphene-layer and graphene-nanoribbon FETs as THz detectors Type Conference Article
Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1124 Issue Pages 051054
Keywords field-effect transistor, FET, monolayer graphene, graphene nanoribbons
Abstract We report on detection of sub-THz radiation (129-430 GHz) using graphene based asymmetric field-effect transistor (FET) structures with different channel geometry: monolayer graphene, graphene nanoribbons. In all devices types we observed the similar trends of response on sub-THz radiation. The response fell with increasing frequency at room temperature, but increased with increasing frequency at 77 K. Our calculations show that the change in the trend of the frequency dependence at 77 K is associated with the appearance of plasma waves in the graphene channel. Unusual properties of p-n junctions in graphene are highlighted using devices of special geometry.
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ISSN (up) 1742-6588 ISBN Medium
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Notes Approved no
Call Number Serial 1300
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Author Moskotin, M. V.; Gayduchenko, I. A.; Goltsman, G. N.; Titova, N.; Voronov, B. M.; Fedorov, G. F.; Pyatkov, F.; Hennrich, F.
Title Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes Type Conference Article
Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1124 Issue Pages 051050 (1 to 5)
Keywords field-effect transistor, FET, carbon nanotube, CNT
Abstract In this work we investigate the response on THz radiation of a FET device based on an individual carbon nanotube conductance channel. It was already shown, that the response of such devices can be either of diode rectification origin or of thermoelectric effect origin or of their combination. In this work we demonstrate that at 77K and 8K temperatures strong bolometric effect also makes a significant contribution to the response.
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ISSN (up) 1742-6588 ISBN Medium
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Notes Approved no
Call Number Serial 1301
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Author Gayduchenko, I.; Fedorov, G.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G.
Title Towards to the development of THz detectors based on carbon nanostructures Type Conference Article
Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1092 Issue Pages 012039 (1 to 4)
Keywords CVD graphene, carbon nanotubes, CNT, field effect transistors, FET, THz detectors
Abstract Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of detectors with sensor elements based on CVD graphene as well as its derivatives – carbon nanotubes (CNTs). The devices are made in configuration of field effect transistors (FET) with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes. We show that at 300K semiconducting CNTs show better performance up to 300GHz with responsivity up to 100V/W, while quasi-metallic CNTs are shown to operate up to 2.5THz. At 300 K graphene detector exhibit the room-temperature responsivity from R = 15 V/W at f = 129 GHz to R = 3 V/W at f = 450 GHz. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation.
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ISSN (up) 1742-6588 ISBN Medium
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Notes Approved no
Call Number Serial 1302
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Author Nikoghosyan, A. S.; Martirosyan, R. M.; Hakhoumian, A. A.; Makaryan, A. H.; Tadevosyan, V. R.; Goltsman, G. N.; Antipov, S. V.
Title Effect of absorption on the efficiency of THz radiation generation in a nonlinear crystal placed into a waveguide Type Journal Article
Year 2018 Publication Armenian J. Phys. Abbreviated Journal Armenian J. Phys.
Volume 11 Issue 4 Pages 257-262
Keywords THz, waveguide, nonlinear crystal
Abstract The effect of THz radiation absorption on the efficiency of generation of coherent THz radiation in a nonlinear optical crystal placed into a metal rectangular waveguide is studied. The efficiency of the nonlinear conversion of optical laser radiation to the THz band is also a function of the phase-matching (PM) condition inside the nonlinear crystal. The method of partial filling of a metal waveguide with a nonlinear optical crystal is used to ensure phase matching. Phase matching was obtained by the proper choice of the thickness of the nonlinear crystal, namely the degree of partial filling of the waveguide. We have studied the THz radiation attenuation caused by the losses in both the metal walls of the waveguide and in the crystal, taking into account the dimension of the cross section of the waveguide, the degree of partial filling and its dielectric constant.
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ISSN (up) 1829-1171 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1291
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Author Bandurin, D. A.; Svintsov, D.; Gayduchenko, I.; Xu, S. G.; Principi, A.; Moskotin, M.; Tretyakov, I.; Yagodkin, D.; Zhukov, S.; Taniguchi, T.; Watanabe, K.; Grigorieva, I. V.; Polini, M.; Goltsman, G. N.; Geim, A. K.; Fedorov, G.
Title Resonant terahertz detection using graphene plasmons Type Journal Article
Year 2018 Publication Nat. Commun. Abbreviated Journal Nat. Commun.
Volume 9 Issue Pages 5392 (1 to 8)
Keywords THz, graphene plasmons
Abstract Plasmons, collective oscillations of electron systems, can efficiently couple light and electric current, and thus can be used to create sub-wavelength photodetectors, radiation mixers, and on-chip spectrometers. Despite considerable effort, it has proven challenging to implement plasmonic devices operating at terahertz frequencies. The material capable to meet this challenge is graphene as it supports long-lived electrically tunable plasmons. Here we demonstrate plasmon-assisted resonant detection of terahertz radiation by antenna-coupled graphene transistors that act as both plasmonic Fabry-Perot cavities and rectifying elements. By varying the plasmon velocity using gate voltage, we tune our detectors between multiple resonant modes and exploit this functionality to measure plasmon wavelength and lifetime in bilayer graphene as well as to probe collective modes in its moire minibands. Our devices offer a convenient tool for further plasmonic research that is often exceedingly difficult under non-ambient conditions (e.g. cryogenic temperatures) and promise a viable route for various photonic applications.
Address Physics Department, Moscow State University of Education (MSPU), Moscow, Russian Federation, 119435. fedorov.ge@mipt.ru
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ISSN (up) 2041-1723 ISBN Medium
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Notes Approved no
Call Number Serial 1148
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Author Korneev, A.; Kovalyuk, V.; An, P.; Golikov, A.; Zubkova, E.; Ferrari, S.; Kahl, O.; Pernice, W.; Goltsman, G.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R.
Title Superconducting single-photon detector for integrated waveguide spectrometer Type Conference Article
Year 2018 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.
Volume 190 Issue Pages 04009
Keywords SSPD, SNSPD, Si3N4 waveguides, waveguide spectrometer
Abstract We present our recent achievements in the development of an on-chip spectrometer consisting of arrayed waveguide grating made of Si3N4 waveguides and NbN superconducting single-photon detector.
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Series Volume Series Issue Edition
ISSN (up) 2100-014X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1199
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Author Belosevich, V. V.; Gayduchenko, I. A.; Titova, N. A.; Zhukova, E. S.; Goltsman, G. N.; Fedorov, G. E.; Silaev, A. A.
Title Response of carbon nanotube film transistor to the THz radiation Type Conference Article
Year 2018 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.
Volume 195 Issue Pages 05012 (1 to 2)
Keywords field-effect transistor, FET, carbon nanotube, CNT
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ISSN (up) 2100-014X ISBN Medium
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Notes Approved no
Call Number Serial 1317
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Author Tretyakov, I.; Kaurova, N.; Raybchun, S.; Goltsman, G. N.; Silaev, A. A.
Title Technology for NbN HEB based multipixel matrix of THz range Type Conference Article
Year 2018 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.
Volume 195 Issue Pages 05011
Keywords NbN HEB
Abstract The influence of homogeneity disorder degree of the thin superconducting NbN film across of Si wafer on characteristics of the Hot Electron Bolometers (HEB) has been investigated. Our experiments have been carried out near the superconducting transition and far below it. The high homogeneity disorder degree of the NbN film has been achieved by preparing the Si substrate surface. The fabricated HEBs all have almost identical R (T) characteristics with a dispersion of Tc and the normal resistance R300 of not more than 0.15K and 2 Ω, respectively. The quality of the devises allows us to demonstrate clearly the influence of non-equilibrium processes in the S’SS’ system on the device performance. Our fabrication technology also allows creating multiplex heterodyne and direct detector matrices based the HEB devices.
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ISSN (up) 2100-014X ISBN Medium
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Notes Approved no
Call Number Serial 1318
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Author Korneeva, Y.; Vodolazov, D.; Florya, I.; Manova, N.; Smirnov, E.; Korneev, A.; Mikhailov, M.; Goltsman, G.; Klapwijk, T. M.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R.
Title Single photon detection in micron scale NbN and α-MoSi superconducting strips Type Conference Article
Year 2018 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.
Volume 190 Issue Pages 04010 (1 to 2)
Keywords SSPD
Abstract We experimentally demonstrate the single photon detection in straight micrometer-wide NbN and α-MoSi bridges. Width of the bridges is 2 µm, while the wavelength of the photon changes from 408 to 1550 nm and critical current exceeds 50% of the depairing current. Obtained results offer the alternative route for design of detectors without resonator and meander structure and indirectly confirm vortex assisted mechanism of single photon detection.
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ISSN (up) 2100-014X ISBN Medium
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Notes Approved no
Call Number Serial 1319
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