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Author Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. url  doi
openurl 
  Title Wide-band highspeed Nb and YBaCuO detectors Type Journal Article
  Year 1991 Publication IEEE Trans. Magn. Abbreviated Journal IEEE Trans. Magn.  
  Volume 27 Issue 2 Pages 2836-2839  
  Keywords YBCO, HTS, Nb detectors  
  Abstract The physical limitations on the response time and the nature of nonequilibrium detection of radiation were investigated for Nb and YBCO film in a wide spectral range from millimeter to near-infrared wavelengths. In the case of ideal heat removal from the film, the detection mechanism is connected with an electron heating effect which is not selective over a wide spectral interval. For Nb, the dependence of the response time on the electron mean free path l and temperature T is tau varies as T/sup -2/l/sup -1/. The values of detectivity D* and tau are 3*10/sup 11/ W/sup -1/ Hz/sup 1/2/ cm and 5*10/sup -9/ s at T=1.6 K, respectively. For YBCO film the tau value of 1-2 ps at T=77 K was obtained; the NEP value of 3*10/sup -11/ W-Hz/sup -1/2/ can be obtained at T=77 K in the case of the optimal film matching to the radiation.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN (down) 0018-9464 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 239  
Permanent link to this record
 

 
Author Teich, M. C. doi  openurl
  Title Infrared heterodyne detection Type Conference Article
  Year 1968 Publication Proc. IEEE Abbreviated Journal  
  Volume 56 Issue 1 Pages 37-46  
  Keywords minimum detectable power, quantum limit, infrared, IR mixer  
  Abstract Heterodyne experiments have been performed in the middle infrared region of the electromagnetic spectrum using the CO2laser as a radiation source. Theoretically optimum operation has been achieved at kHz heterodyne frequencies using photoconductive Ge:Cu detectors operated at 4°K, and at kHz and MHz frequencies using Pb1-xSnxSe photovoltaic detectors at 77°K. In accordance with the theory, the minimum detectable power observed is a factor of 2/η greater than the theoretically perfect quantum counter, hvΔf. The coefficient 2/η varies from 5 to 25 for the detectors investigated in this study. A comparison is made between photoconductive and photodiode detectors for heterodyne use in the infrared, and it is concluded that both are useful. Heterodyne detection at 10.6 µm is expected to be useful for communications applications, infrared radar, and heterodyne spectroscopy. It has particular significance because of the high radiation power available from the CO2laser, and because of the 8 to 14 µm atmospheric window.  
  Address  
  Corporate Author Thesis  
  Publisher IEEE Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN (down) 0018-9219 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1060  
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Author Zhang, J.; Boiadjieva, N.; Chulkova, G.; Deslandes, H.; Gol'tsman, G. N.; Korneev, A.; Kouminov, P.; Leibowitz, M.; Lo, W.; Malinsky, R.; Okunev, O.; Pearlman, A.; Slysz, W.; Smirnov, K.; Tsao, C.; Verevkin, A.; Voronov, B.; Wilsher, K.; Sobolewski, R. url  doi
openurl 
  Title Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors Type Journal Article
  Year 2003 Publication Electron. Lett. Abbreviated Journal Electron. Lett.  
  Volume 39 Issue 14 Pages 1086-1088  
  Keywords NbN SSPD, SNSPD, applications  
  Abstract The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN (down) 0013-5194 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1512  
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Author Il'in, K. S.; Karasik, B. S.; Ptitsina, N. G.; Sergeev, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen, E. V.; Krasnosvobodtsev, S. I. url  doi
openurl 
  Title Electron-phonon-impurity interference in thin NbC films: electron inelastic scattering time and corrections to resistivity Type Conference Article
  Year 1996 Publication Czech. J. Phys. Abbreviated Journal Czech. J. Phys.  
  Volume 46 Issue S2 Pages 857-858  
  Keywords NbC films  
  Abstract Complex study of transport properties of impure NbC films with the electron mean free pathl=0.6–13 nm show the crucial role of the electron-phonon-impurity interference (EPII). In the temperature range 20–70 K we found the interference correction to resistivity proportional to T2 and to the residual resistivity of the film. Using the comprehensive theory of EPII, we determine the electron coupling with transverse phonons and calculate the electron inelastic scattering time. Direct measurements of the inelastic electron scattering time using a response to a high-frequency amplitude modulated cw radiation agree well with the theory.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN (down) 0011-4626 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1617  
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Author Chulcova, G. M.; Ptitsina, N. G.; Gershenzon, E. M.; Gershenzon, M. E.; Sergeev, A. V. url  doi
openurl 
  Title Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films Type Conference Article
  Year 1996 Publication Czech J. Phys. Abbreviated Journal Czech J. Phys.  
  Volume 46 Issue S5 Pages 2489-2490  
  Keywords Al, Be, Nb films  
  Abstract The temperature dependence of the resistivity of thin Nb, Al, Be films has been studied over a wide temperature range 4-300 K. We have found that the temperature-dependent correction to the residual resistivity is well described by the sum of the Bloch-Grüneisen term and the term originating from the interference between electron-phonon and electron-impurity scattering. Study of the transport interference phenomena allows to determine electron-phonon coupling in disordered metals. The interference term is proportional to T2 and also to the residual resistivity and dominates over the Bloch-Grüneisen term at low temperatures (T<40 K).  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN (down) 0011-4626 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1767  
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