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| Author | Zhang, J.; Boiadjieva, N.; Chulkova, G.; Deslandes, H.; Gol'tsman, G. N.; Korneev, A.; Kouminov, P.; Leibowitz, M.; Lo, W.; Malinsky, R.; Okunev, O.; Pearlman, A.; Slysz, W.; Smirnov, K.; Tsao, C.; Verevkin, A.; Voronov, B.; Wilsher, K.; Sobolewski, R. | ||||
| Title | Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors | Type | Journal Article | ||
| Year | 2003 | Publication | Electron. Lett. | Abbreviated Journal | Electron. Lett. |
| Volume | 39 | Issue | 14 | Pages | 1086-1088 |
| Keywords | NbN SSPD, SNSPD, applications | ||||
| Abstract | The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed. | ||||
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| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
ISSN  |
0013-5194 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1512 | |||
| Permanent link to this record | |||||
| Author | Il'in, K. S.; Karasik, B. S.; Ptitsina, N. G.; Sergeev, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen, E. V.; Krasnosvobodtsev, S. I. | ||||
| Title | Electron-phonon-impurity interference in thin NbC films: electron inelastic scattering time and corrections to resistivity | Type | Conference Article | ||
| Year | 1996 | Publication | Czech. J. Phys. | Abbreviated Journal | Czech. J. Phys. |
| Volume | 46 | Issue | S2 | Pages | 857-858 |
| Keywords | NbC films | ||||
| Abstract | Complex study of transport properties of impure NbC films with the electron mean free pathl=0.6–13 nm show the crucial role of the electron-phonon-impurity interference (EPII). In the temperature range 20–70 K we found the interference correction to resistivity proportional to T2 and to the residual resistivity of the film. Using the comprehensive theory of EPII, we determine the electron coupling with transverse phonons and calculate the electron inelastic scattering time. Direct measurements of the inelastic electron scattering time using a response to a high-frequency amplitude modulated cw radiation agree well with the theory. | ||||
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| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN |
0011-4626 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1617 | |||
| Permanent link to this record | |||||
| Author | Chulcova, G. M.; Ptitsina, N. G.; Gershenzon, E. M.; Gershenzon, M. E.; Sergeev, A. V. | ||||
| Title | Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films | Type | Conference Article | ||
| Year | 1996 | Publication | Czech J. Phys. | Abbreviated Journal | Czech J. Phys. |
| Volume | 46 | Issue | S5 | Pages | 2489-2490 |
| Keywords | Al, Be, Nb films | ||||
| Abstract | The temperature dependence of the resistivity of thin Nb, Al, Be films has been studied over a wide temperature range 4-300 K. We have found that the temperature-dependent correction to the residual resistivity is well described by the sum of the Bloch-Grüneisen term and the term originating from the interference between electron-phonon and electron-impurity scattering. Study of the transport interference phenomena allows to determine electron-phonon coupling in disordered metals. The interference term is proportional to T2 and also to the residual resistivity and dominates over the Bloch-Grüneisen term at low temperatures (T<40 K). | ||||
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN |
0011-4626 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1767 | |||
| Permanent link to this record | |||||
| Author | Dube, I.; Jiménez, D.; Fedorov, G.; Boyd, A.; Gayduchenko, I.; Paranjape, M.; Barbara, P. | ||||
| Title | Understanding the electrical response and sensing mechanism of carbon-nanotube-based gas sensors | Type | Journal Article | ||
| Year | 2015 | Publication | Carbon | Abbreviated Journal | Carbon |
| Volume | 87 | Issue | Pages | 330-337 | |
| Keywords | carbon nanotubes, CNT detectors, field effect transistors, FET | ||||
| Abstract | Gas sensors based on carbon nanotube field effect transistors (CNFETs) have outstanding sensitivity compared to existing technologies. However, the lack of understanding of the sensing mechanism has greatly hindered progress on calibration standards and customization of these nano-sensors. Calibration requires identifying fundamental transistor parameters and establishing how they vary in the presence of a gas. This work focuses on modeling the electrical response of CNTFETs in the presence of oxidizing (NO2) and reducing (NH3) gases and determining how the transistor characteristics are affected by gas-induced changes of contact properties, such as the Schottky barrier height and width, and by the doping level of the nanotube. From the theoretical fits of the experimental transfer characteristics at different concentrations of NO2 and NH3, we find that the CNTFET response can be modeled by introducing changes in the Schottky barrier height. These changes are directly related to the changes in the metal work function of the electrodes that we determine experimentally, independently, with a Kelvin probe. Our analysis yields a direct correlation between the ON – current and the changes in the electrode metal work function. Doping due to molecules adsorbed at the carbon-nanotube/metal interface also affects the transfer characteristics. | ||||
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| Language | Summary Language | Original Title | |||
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| Series Volume | Series Issue | Edition | |||
| ISSN |
0008-6223 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1778 | |||
| Permanent link to this record | |||||
| Author | Tarkhov, M.; Claudon, J.; Poizat, J. Ph.; Korneev, A.; Divochiy, A.; Minaeva, O.; Seleznev, V.; Kaurova, N.; Voronov, B.; Semenov, A. V.; Gol'tsman, G. | ||||
| Title | Ultrafast reset time of superconducting single photon detectors | Type | Journal Article | ||
| Year | 2008 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 92 | Issue | 24 | Pages | 241112 (1 to 3) |
| Keywords | SSPD, SNSPD | ||||
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| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN |
0003-6951 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 429 | |||
| Permanent link to this record | |||||
| Author | Delacour, C.; Claudon, J.; Poizat, J.-Ph.; Pannetier, B.; Bouchiat, V.; de Lamaestre, R. Espiau; Villegier, J.-C.; Tarkhov, M.; Korneev, A.; Voronov, B.; Gol'tsman, G. | ||||
| Title | Superconducting single photon detectors made by local oxidation with an atomic force microscope | Type | Journal Article | ||
| Year | 2007 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 90 | Issue | 19 | Pages | 191116 (1 t0 3) |
| Keywords | SSPD | ||||
| Abstract | The authors present a fabrication technique of superconducting single photon detectors made by local oxidation of niobium nitride ultrathin films. Narrow superconducting meander lines are obtained by direct writing of insulating niobium oxynitride lines through the films using voltage-biased tip of an atomic force microscope. Due to the 30nm resolution of the lithographic technique, the filling factor of the meander line can be made substantially higher than detector of similar geometry made by electron beam lithography, thus leading to increased quantum efficiency. Single photon detection regime of these devices is demonstrated at 4.2K. The authors thank J.-P. Maneval for stimulating discussions. This work has been partly supported by ACI Nanoscience from French Ministry of Research, D.G.A., by Grant No. 02.445.11.7434 of Russian Ministry of Education and Science, and by the European Commission under project “SINPHONIA,” Contract No. NMP4-CT-2005-16433. |
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| Series Volume | Series Issue | Edition | |||
| ISSN |
0003-6951 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 423 | |||
| Permanent link to this record | |||||
| Author | Lindgren, M.; Zorin, M. A.; Trifonov, V.; Danerud, M.; Winkler, D.; Karasik, B. S.; Gol'tsman, G. N.; Gershenzon, E. M. | ||||
| Title | Optical mixing in a patterned YBa2Cu3O7-δ thin film | Type | Journal Article | ||
| Year | 1994 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 65 | Issue | 26 | Pages | 3398-3400 |
| Keywords | YBCO HTS HEB mixer, bandwidth | ||||
| Abstract | Mixing of 1.56 µm infrared radiation from two lasers in a high quality YBa2Cu3O7-δ thin film, patterned to parallel strips, was demonstrated. A mixer bandwidth of 18 GHz, limited by the measurement system, was obtained. A model based on nonequilibrium electron heating gives a good fit to the data and predicts an intrinsic mixer bandwidth in excess of 100 GHz, operating in the whole infrared spectrum. Reduction of bolometric effects and ways to decrease the conversion loss of the mixer is discussed. The minimum conversion loss is expected to be ~10 dB. | ||||
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| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN |
0003-6951 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 251 | |||
| Permanent link to this record | |||||
| Author | Karasik, B. S.; Elantiev, A. I. | ||||
| Title | Noise temperature limit of a superconducting hot-electron bolometer mixer | Type | Journal Article | ||
| Year | 1996 | Publication | Applied Physics Letters | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 68 | Issue | 6 | Pages | 853-855 |
| Keywords | HEB mixer noise temperature, Johnson noise, thermal fluctuation noise, noise bandwidth | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN |
0003-6951 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 260 | |||
| Permanent link to this record | |||||
| Author | Karasik, B. S.; Il'in, K. S.; Pechen, E. V.; Krasnosvobodtsev, S. I. | ||||
| Title | Diffusion cooling mechanism in a hot-electron NbC microbolometer mixer | Type | Journal Article | ||
| Year | 1996 | Publication | Applied Physics Letters | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 68 | Issue | 16 | Pages | 2285-2287 |
| Keywords | HEB mixer, diffusion cooling channel, diffusion channel | ||||
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| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN |
0003-6951 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 262 | |||
| Permanent link to this record | |||||
| Author | Il’in, K. S.; Milostnaya, I. I.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M.; Sobolewski, R. | ||||
| Title | Ultimate quantum efficiency of a superconducting hot-electron photodetector | Type | Journal Article | ||
| Year | 1998 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 73 | Issue | 26 | Pages | 3938-3940 |
| Keywords | NbN SSPD, SNSPD | ||||
| Abstract | The quantum efficiency and current and voltage responsivities of fast hot-electron photodetectors, fabricated from superconducting NbN thin films and biased in the resistive state, have been shown to reach values of 340, 220 A/W, and 4×104 V/W, respectively, for infrared radiation with a wavelength of 0.79 μm. The characteristics of the photodetectors are presented within the general model, based on relaxation processes in the nonequilibrium electron heating of a superconducting thin film. The observed, very high efficiency and sensitivity of the superconductor absorbing the photon are explained by the high multiplication rate of quasiparticles during the avalanche breaking of Cooper pairs. |
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| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN |
0003-6951 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1579 | |||
| Permanent link to this record | |||||