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| Author | An, Zhenghua; Chen, Jeng-Chung; Ueda, T.; Komiyama, S.; Hirakawa, K. | ||||
| Title | Infrared phototransistor using capacitively coupled two-dimensional electron gas layers | Type | Journal Article | ||
| Year | 2005 | Publication | Applied Physics Letters | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 86 | Issue  |
Pages | 172106 - 172106-3 | |
| Keywords | 2DEG | ||||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ akorneev @ | Serial | 603 | ||
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| Author | Shah, Jagdeep; Pinczuk, A.; Gossard, A. C.; Wiegmann, W. | ||||
| Title | Energy-loss rates for hot electrons and holes in GaAs quantum wells | Type | Journal Article | ||
| Year | 1985 | Publication | Phys. Rev. Lett. | Abbreviated Journal | Phys. Rev. Lett. |
| Volume | 54 | Issue |
Pages | 2045-2048 | |
| Keywords | 2DEG, GaAs/AlGaAs, heat flow, electron-phonon, hole-phonon, carrier-phonon, interactions | ||||
| Abstract | We report the first direct determination of carrier-energy-loss rates in a semiconductor. These measurements provide fundamental insight into carrier-phonon interactions in semiconductors. Unexpectedly large differences are found in the energy-loss rates for electrons and holes in GaAs/AlGaAs quantum wells. This large difference results from an anomalously low electron-energy-loss rate, which we attribute to the presence of nonequilibrium optical phonons rather than the effects of reduced dimensionality or dynamic screening. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 633 | |||
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| Author | Verevkin, A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.; Smirnov, K. S.; Sobolewski, R. | ||||
| Title | Direct measurements of energy relaxation times in two-dimensional structures under quasi-equilibrium conditions | Type | Conference Article | ||
| Year | 2002 | Publication | Mater. Sci. Forum | Abbreviated Journal | Mater. Sci. Forum |
| Volume | 384-3 | Issue |
Pages | 107-116 | |
| Keywords | 2DEG, AlGaAs/GaAs | ||||
| Abstract | A new microwave technique was successfully applied for direct studies of energy relaxation times in two-dimensional AlGaAs/GaAs structures under quasi-equilibrium conditions in the nanosecond and picosecond time scale. We report our results of energy relaxation time measurements in the temperature range 1.6-50 K, in quantum Hall effect regime in magnetic fields up to 4 T. | ||||
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| Area | Expedition | Conference | Materials Science Forum | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1536 | |||
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| Author | Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. | ||||
| Title | Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range | Type | Conference Article | ||
| Year | 1997 | Publication | Proc. 4-th Int. Semicond. Device Research Symp. | Abbreviated Journal | Proc. 4-th Int. Semicond. Device Research Symp. |
| Volume | Issue |
Pages | 55-58 | ||
| Keywords | 2DEG, AlGaAs/GaAs heterostructures | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1602 | |||
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| Author | Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol'tsman, G. N.; Voronov, B. M.; Gershenzon, E. M.; Yngvesson, K. S. | ||||
| Title | Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure | Type | Conference Article | ||
| Year | 1997 | Publication | Proc. 4-th Int. Semicond. Device Research Symp. | Abbreviated Journal | Proc. 4-th Int. Semicond. Device Research Symp. |
| Volume | Issue |
Pages | 163-166 | ||
| Keywords | S-2DEG-S HEB mixers, detectors, AlGaAs/GaAs heterostructures, NbN | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1603 | |||
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| Author | Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. | ||||
| Title | Direct measurements of energy relaxation time of electrons in AlGaAs/GaAs heterostructures under quasi-equilibrium conditions | Type | Journal Article | ||
| Year | 1996 | Publication | Surface Science | Abbreviated Journal | Surface Science |
| Volume | 361-362 | Issue |
Pages | 569-573 | |
| Keywords | 2DEG, AlGaAs/GaAs heterostructures | ||||
| Abstract | For the first time, results are presented of a direct measurement of the energy relaxation time τε of 2D electrons in an AlGaAs/GaAs heterojunction at T = 1 and 5–20 K. A weak temperature dependence of τε for the T > 4K range and a linear temperature dependence of the reciprocal of τε for T < 4K have been observed. The linear dependence τε−1 ≈ T in the Bloch-Gruneisen regime is direct evidence of the predominance of the piezo-electric mechanism of electron-phonon interaction in non-elastic electron scattering processes. The values of τε in this regime are in very good agreement with the results of the Karpus theory. At higher temperatures, where the deformation-potential scattering becomes noticeable, a substantial disagreement between the experimental data and the theoretical results is observed. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0039-6028 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1609 | |||
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| Author | Смирнов, Константин Владимирович; Чулкова, Галина Меркурьевна; Вахтомин, Юрий Борисович; Корнеев, Александр Александрович; Окунев, Олег Валерьевич; Дивочий, Александр Валерьевич; Семенов, Александр Владимирович; Гольцман, Григорий Наумович | ||||
| Title | Особенности разогрева и релаксации горячих электронов О-754 в тонкопленочных cверхпроводниковых наноструктурах и 2D полупроводниковых гетероструктурах при поглощении излучения инфракрасного и терагерцового диапазонов | Type | Book Whole | ||
| Year | 2014 | Publication | Abbreviated Journal | ||
| Volume | Issue |
Pages | |||
| Keywords | 2DEG | ||||
| Abstract | В монографии рассмотрены основные особенности эффекта электронного разогрева в тонких сверхпроводниковых пленках и полупроводниковых гетеропереходах, возникающего при поглощении носителями заряда излучений терагерцового и инфракрасного диапазонов. Значительная часть монографии посвящена представлению современных достижений при использовании указанного эффекта для создания приемных устройств с рекордными характеристиками: терагерцовых гетеродинных и болометрических приемников на основе сверхпроводниковых и полупроводниковых структур; сверхпроводниковых приемников одиночных ИК фотонов. В работе также подробно рассмотрены основы современной сверхпроводниковой тонкопленочной технологии. Монография может быть полезна студентам старших курсов, аспирантам и начинающим исследователям, работающим в области физики твердого тела, оптики, радиофизики. |
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| Address | Москва | ||||
| Corporate Author | Thesis | ||||
| Publisher | МПГУ | Place of Publication | Editor | ||
| Language | Russian | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | 978-5-4263-0145-0 | Medium | ||
| Area | Expedition | Conference | |||
| Notes | 240 страниц | Approved | no | ||
| Call Number | Serial | 1814 | |||
| Permanent link to this record | |||||
| Author | Чулкова, Г. М.; Корнеев, А. А.; Смирнов, К. В.; Окунев, О. В. | ||||
| Title | Энергетическая релаксация в примесных металлах, двумерном электронном газе в AlGaAs-GaAs, сверхпроводниковых пленках NbN и детекторы субмиллиметрового и ик излучения на их основе | Type | Book Whole | ||
| Year | 2012 | Publication | Abbreviated Journal | ||
| Volume | Issue |
Pages | |||
| Keywords | 2DEG, AlGaAs/GaAs, NbN detectors | ||||
| Abstract | Монография посвящена обзору исследований влияния эффектов электронного беспорядка на электронное взаимодействие в металлах, сверхпроводниках, полупроводниках, а также в различных низкоразмерных структурах. Актуальность поднятых в монографии вопросов определяется интенсивным развитием нанотехнологий, созданием новых наноструктурированных материалов и уникальных наноэлементов для электроники и фотоники. Упругое электронное рассеяние на границах наноструктур качественно меняет взаимодействие электронов с фонолами, что, безусловно, должно учитываться при проектировании соответствующей элементной базы. Прикладная часть работы посвящена контролируемой модификации электронных процессов для оптимизации новых наносенсоров на основе электронного разогрева в сверхпроводниковых и полупроводниковых структурах. Монография предназначена для студентов старших курсов, аспирантов и начинающих следователей, работающих в области сверхпроводниковой наноэлектроники. | ||||
| Address | Москва | ||||
| Corporate Author | Thesis | ||||
| Publisher | Прометей, МПГУ | Place of Publication | Editor | ||
| Language | Summary Language | Original Title | |||
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| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | 978-5-4263-0118-4 | Medium | ||
| Area | Expedition | Conference | |||
| Notes | УДК: 537.311 | Approved | no | ||
| Call Number | Serial | 1818 | |||
| Permanent link to this record | |||||
| Author | Смирнов, Константин Владимирович | ||||
| Title | Энергетическая релаксация электронов в 2D-канале гетеропереходов GAAS/ALGAAS и транспортные процессы в структурах полупроводник-сверхпроводник на их основе | Type | Manuscript | ||
| Year | 2000 | Publication | М. МПГУ | Abbreviated Journal | |
| Volume | Issue |
Pages | |||
| Keywords | 2DEG, AlGaAs/GaAs heterostructures, NbN films | ||||
| Abstract | Диссертация посвящена изучению электрон-фононного взаимодействия в двумерном электронном газе, образующемся на границе раздела полупроводников AlGaAs и GaAs, а также созданию на основе гетероперехода GaAs/AlGaAs и сверхпроводника NbN гибридных структур сверхпроводник-полупроводник-сверхпроводник и изучению их электрофизических свойств. | ||||
| Address | Москва, МПГУ | ||||
| Corporate Author | Thesis | Ph.D. thesis | |||
| Publisher | Place of Publication | Editor | |||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1830 | |||
| Permanent link to this record | |||||
| Author | Смирнов, К. В. | ||||
| Title | AlGaAs/GaAs смеситель на эффекте разогрева двумерных электронов для тепловизора субмиллиметрового диапазона | Type | Abstract | ||
| Year | 2003 | Publication | Тезисы докладов VI Российской конференции по физике полупроводников | Abbreviated Journal | |
| Volume | Issue |
Pages | 181 | ||
| Keywords | 2DEG, AlGaAs/GaAs heterostructures, mixer | ||||
| Abstract | |||||
| Address | ФТИ им. А. Ф. Иоффе, Санк-Петербург | ||||
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| Area | Expedition | Conference | VI Российской конференции по физике полупроводников (27-31 октября) | ||
| Notes | Unconfirmed; Сама конференция, однако, была -- её упоминают: [http://www.nsc.ru/HBC/article.phtml?nid=271&id=17], [https://www.isp.nsc.ru/institut/nauchnye-podrazdeleniya/lab-20/publikatsii/2003], [http://www.ioffe.ru/sem_tech/sem%5Fteh%5Fmovpe%5Fpublications%5Fru.htm#R2003], [https://istina.ips.ac.ru/collections/828771/] | Approved | no | ||
| Call Number | Serial | 1837 | |||
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| Author | Шангина, Е. Л.; Смирнов, К. В.; Морозов, Д. В.; Ковалюк, В. В.; Гольцман, Г. Н.; Веревкин, А. А.; Торопов, А. И. | ||||
| Title | Концентрационная зависимость полосы преобразования смесителей субмиллиметрового диапазона на основе наноструктур AlGaAs/GaAs | Type | Journal Article | ||
| Year | 2010 | Publication | Изв. РАН Сер. Физ. | Abbreviated Journal | Изв. РАН Сер. Физ. |
| Volume | 74 | Issue |
1 | Pages | 110-112 |
| Keywords | 2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth | ||||
| Abstract | Методом субмиллиметровой спектроскопии с высоким временным разрешением при Т = 4.2 К измерена концентрационная зависимость полосы преобразования гетеродинного детектирования гетероструктур AlGaAs/GaAs с двумерным электронным газом. С увеличением концентрации двумерных электронов ns = (1.6–6.6) · 1011см-2 ширина полосы преобразования f3dB уменьшается от 245 до 145 МГц. В исследованной области концентраций наблюдается зависимость f3dB , обусловленная рассеянием электронов на деформационном потенциале акустических фононов и пьезоэлектрическим рассеянием. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Duplicated as 1217 | Approved | no | ||
| Call Number | RPLAB @ gujma @ | Serial | 642 | ||
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| Author | Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. | ||||
| Title | Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures | Type | Journal Article | ||
| Year | 2010 | Publication | Bull. Russ. Acad. Sci. Phys. | Abbreviated Journal | Bull. Russ. Acad. Sci. Phys. |
| Volume | 74 | Issue |
1 | Pages | 100-102 |
| Keywords | 2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth | ||||
| Abstract | The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1062-8738 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1217 | |||
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| Author | Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. | ||||
| Title | Energy relaxation of two-dimensional electrons in the quantum Hall effect regime | Type | Journal Article | ||
| Year | 2000 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 71 | Issue |
1 | Pages | 31-34 |
| Keywords | 2DEG, GaAs/AlGaAs heterostructures | ||||
| Abstract | The mm-wave spectroscopy with high temporal resolution is used to measure the energy relaxation times τe of 2D electrons in GaAs/AlGaAs heterostructures in magnetic fields B=0–4 T under quasi-equilibrium conditions at T=4.2 K. With increasing B, a considerable increase in τe from 0.9 to 25 ns is observed. For high B and low values of the filling factor ν, the energy relaxation rate τ −1e oscillates. The depth of these oscillations and the positions of maxima depend on the filling factor ν. For ν>5, the relaxation rate τ −1e is maximum when the Fermi level lies in the region of the localized states between the Landau levels. For lower values of ν, the relaxation rate is maximum at half-integer values of τ −1e when the Fermi level is coincident with the Landau level. The characteristic features of the dependence τ −1e (B) are explained by different contributions of the intralevel and interlevel electron-phonon transitions to the process of the energy relaxation of 2D electrons. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-3640 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | http://jetpletters.ru/ps/899/article_13838.shtml (“Энергетическая релаксация двумерных электронов в области квантового эффекта Холла”) | Approved | no | ||
| Call Number | Serial | 1559 | |||
| Permanent link to this record | |||||
| Author | Shaha, Jagdeep; Pinczukb, A.; Gossardb, A. C.; Wiegmannb, W. | ||||
| Title | Hot carrier energy loss rates in GaAs quantum wells: large differences between electrons and holes | Type | Journal Article | ||
| Year | 1985 | Publication | Phys. B+C | Abbreviated Journal | |
| Volume | 134 | Issue |
1-3 | Pages | 174-178 |
| Keywords | 2DEG, GaAs/AlGaAs, heat flow, electron-phonon, hole-phonon, carrier-phonon, interactions | ||||
| Abstract | The first direct and separate determination of the hot electron and hot hole energy loss rates to the lattice shows unexpectedly large differences between electrons and holes in GaAs quantum wells. This large difference results from an anomalously low electron energy loss rate, which we attribute to the presence of non-equilibrium optical phonon rather than the effects of reduced dimensionality or dynamic screening. A model calculation of hot phonon effects is presented. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 634 | |||
| Permanent link to this record | |||||
| Author | Kawano, Yukio; Ishibashi, Koji | ||||
| Title | An on-chip near-field terahertz probe and detector | Type | Journal Article | ||
| Year | 2008 | Publication | Nature Photonics | Abbreviated Journal | Nature Photon |
| Volume | 2 | Issue |
10 | Pages | 618-621 |
| Keywords | single molecule, terahertz, THz, near-field, microscopy, imaging, 2DEG, GaAs/AlGaAs, detector, applications | ||||
| Abstract | The advantageous properties of terahertz waves, such as their transmission through objects opaque to visible light, are attracting attention for imaging applications. A promising approach for achieving high spatial resolution is the use of near-field imaging. Although this method has been well established in the visible and microwave regions, it is challenging to perform in the terahertz region. In the terahertz techniques investigated to date, detectors have been located remotely from the probe, which degrades sensitivity, and the influence of far-field waves is unavoidable. Here we present a new integrated detection device for terahertz near-field imaging in which all the necessary detection components — an aperture, a probe and a terahertz detector — are integrated on one semiconductor chip, which is cryogenically cooled. This scheme allows highly sensitive, high-resolution detection of the evanescent field alone and promises new capabilities for high-resolution terahertz imaging. | ||||
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| ISSN | 1749-4885 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 570 | |||
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