Шангина, Е. Л., Смирнов, К. В., Морозов, Д. В., Ковалюк, В. В., Гольцман, Г. Н., Веревкин, А. А., et al. (2010). Концентрационная зависимость полосы преобразования смесителей субмиллиметрового диапазона на основе наноструктур AlGaAs/GaAs. Изв. РАН Сер. Физ., 74(1), 110–112.
Abstract: Методом субмиллиметровой спектроскопии с высоким временным разрешением при Т = 4.2 К измерена концентрационная зависимость полосы преобразования гетеродинного детектирования гетероструктур AlGaAs/GaAs с двумерным электронным газом. С увеличением концентрации двумерных электронов ns = (1.6–6.6) · 1011см-2 ширина полосы преобразования f3dB уменьшается от 245 до 145 МГц. В исследованной области концентраций наблюдается зависимость f3dB , обусловленная рассеянием электронов на деформационном потенциале акустических фононов и пьезоэлектрическим рассеянием.
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Shangina, E. L., Smirnov, K. V., Morozov, D. V., Kovalyuk, V. V., Gol’tsman, G. N., Verevkin, A. A., et al. (2010). Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures. Bull. Russ. Acad. Sci. Phys., 74(1), 100–102.
Abstract: The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering.
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Smirnov, K. V., Ptitsina, N. G., Vakhtomin, Y. B., Verevkin, A. A., Gol’tsman, G. N., & Gershenzon, E. M. (2000). Energy relaxation of two-dimensional electrons in the quantum Hall effect regime. JETP Lett., 71(1), 31–34.
Abstract: The mm-wave spectroscopy with high temporal resolution is used to measure the energy relaxation times τe of 2D electrons in GaAs/AlGaAs heterostructures in magnetic fields B=0–4 T under quasi-equilibrium conditions at T=4.2 K. With increasing B, a considerable increase in τe from 0.9 to 25 ns is observed. For high B and low values of the filling factor ν, the energy relaxation rate τ −1e oscillates. The depth of these oscillations and the positions of maxima depend on the filling factor ν. For ν>5, the relaxation rate τ −1e is maximum when the Fermi level lies in the region of the localized states between the Landau levels. For lower values of ν, the relaxation rate is maximum at half-integer values of τ −1e when the Fermi level is coincident with the Landau level. The characteristic features of the dependence τ −1e (B) are explained by different contributions of the intralevel and interlevel electron-phonon transitions to the process of the energy relaxation of 2D electrons.
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Shaha, J., Pinczukb, A., Gossardb, A. C., & Wiegmannb, W. (1985). Hot carrier energy loss rates in GaAs quantum wells: large differences between electrons and holes. Phys. B+C, 134(1-3), 174–178.
Abstract: The first direct and separate determination of the hot electron and hot hole energy loss rates to the lattice shows unexpectedly large differences between electrons and holes in GaAs quantum wells. This large difference results from an anomalously low electron energy loss rate, which we attribute to the presence of non-equilibrium optical phonon rather than the effects of reduced dimensionality or dynamic screening. A model calculation of hot phonon effects is presented.
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Kawano, Y., & Ishibashi, K. (2008). An on-chip near-field terahertz probe and detector. Nature Photon, 2(10), 618–621.
Abstract: The advantageous properties of terahertz waves, such as their transmission through objects opaque to visible light, are attracting attention for imaging applications. A promising approach for achieving high spatial resolution is the use of near-field imaging. Although this method has been well established in the visible and microwave regions, it is challenging to perform in the terahertz region. In the terahertz techniques investigated to date, detectors have been located remotely from the probe, which degrades sensitivity, and the influence of far-field waves is unavoidable. Here we present a new integrated detection device for terahertz near-field imaging in which all the necessary detection components — an aperture, a probe and a terahertz detector — are integrated on one semiconductor chip, which is cryogenically cooled. This scheme allows highly sensitive, high-resolution detection of the evanescent field alone and promises new capabilities for high-resolution terahertz imaging.
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