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Author |
Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. |
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Title |
Absorption spectra in electron transitions between excited states of impurities in germanium |
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1975 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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22 |
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4 |
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95-97 |
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Ge, impurities, excited states, absorption spectra |
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1773 |
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Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. |
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Title |
Capture of free holes by charged acceptors in uniaxially deformed Ge |
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Year |
1988 |
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Fizika i Tekhnika Poluprovodnikov |
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Fizika i Tekhnika Poluprovodnikov |
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Volume |
22 |
Issue |
3 |
Pages |
540-543 |
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Keywords |
Ge, free holes, capture |
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Цель настоящей работы — исследование кинетики примесной фотопроводимости p-Ge при сильном одноосном сжатии в широком диапазоне изменения интенсивности примесного подсвета, создающего свободные дырки, и определение сечения каскадного захвата дырок на мелкие заряженные акцепторы в условиях преобладания электрон-фононного механизма потерь энергии. |
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Russian |
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Захват свободных дырок заряженными акцепторами в одноосно деформированном Ge |
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1698 |
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Gershenzon, E. M.; Orlova, S. L.; Orlov, L. A.; Ptitsina, N. G.; Rabinovich, R. I. |
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Title |
Intervalley cyclotron-impurity resonance of electrons in n-Ge |
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Year |
1976 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
24 |
Issue |
3 |
Pages |
125-128 |
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Keywords |
n-Ge, cyclotron-impurity resonance |
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1730 |
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Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. |
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Title |
Energy spectrum of free excitons in germanium |
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Year |
1973 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
18 |
Issue |
3 |
Pages |
93 |
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Keywords |
Ge, free excitons, energy spectrum |
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1734 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
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Title |
Kinetics of electron and hole binding into excitons in germanium |
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Year |
1983 |
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Sov. Phys. JETP |
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Sov. Phys. JETP |
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Volume |
57 |
Issue |
2 |
Pages |
369-376 |
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Keywords |
Ge, electron and hole binding |
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The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states. |
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1711 |
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