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Пентин, И. В.; Смирнов, К. В.; Вахтомин, Ю. Б.; Смирнов, А. В.; Ожегов, Р. В.; Дивочий, А. В.; Гольцман, Г. Н. |
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Быстродействующий терагерцевый приемник и инфракрасный счетчик одиночных фотонов на эффекте разогрева электронов в сверхпроводниковых тонкопленочных наноструктурах |
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Journal Article |
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2011 |
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Труды МФТИ |
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Труды МФТИ |
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3 |
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2 |
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38-42 |
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SSPD, SNSPD, HEB |
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Представлены результаты создания приемных систем терагерцевого диапазона (0.3-70 ТГц), обладающих рекордным быстродействием (50 пс) и высокой чувствительностью (до 5x 10^(-14) Вт/Гц^(1/2)), а также однофотонных приемных систем ближнего инфракрасного диапазона с квантовой эффективностью 25 %, уровнем темнового счета 10-1c., максимальной скоростью счета ~ 100 МГц и временным разрешением до 50 пс. |
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RPLAB @ gujma @ |
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707 |
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Kaganov, M. L.; Lifshitz, I. M.; Tanatarov, L. V. |
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Relaxation between electrons and the crystalline lattice |
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1957 |
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Sov. Phys. JETP |
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Sov. Phys. JETP |
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4 |
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173-178 |
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HEB, nonlinear equations, numerical model |
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894 |
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Gershenzon, E. M.; Gol’tsman, G. N.; Gousev, Y. P.; Elant’ev, A. I.; Semenov, A. D. |
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Electromagnetic radiation mixer based on electron heating in resistive state of superconductive Nb and YBaCuO films |
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1991 |
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IEEE Trans. Magn. |
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IEEE Trans. Magn. |
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27 |
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1317-1320 |
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YBCO, HTS, Nb HEB mixers |
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A theory of an electron-heating mixer which makes it possible to calculate all the characteristics of the device is developed. It is shown that positive conversion gain is possible for such a mixer in the millimeter to near-infrared wavelength range. The dynamic range and the optimum heterodyne power can be selected from a very wide interval by varying the mixing element volume. Measurements made for Nb within the frequency range of 120-750 GHz confirm the theory. The conversion loss obtained at T=1.6 K and normalized to the element reaches 0.3 dB in the intermediate frequency band of 40 MHz; the possible noise temperature is 50 K. The estimation of noise temperature and output band for YBaCuO at T=77 yields 200 K and more than 10 GHz, respectively. |
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1941-0069 |
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1681 |
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Hajenius, M.; Barends, R.; Gao, J. R.; Klapwijk, T. M.; Baselmans, J. J. A.; Baryshev, A.; Voronov, B.; Gol'tsman, G. |
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Local resistivity and the current-voltage characteristics of hot electron bolometer mixers |
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Journal Article |
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2005 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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15 |
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495-498 |
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HEB mixer distributed model, HEB distributed model, distributed HEB model |
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Hot-electron bolometer devices, used successfully in low noise heterodyne mixing at frequencies up to 2.5 THz, have been analyzed. A distributed temperature numerical model of the NbN bridge, based on a local electron and a phonon temperature, is used to model pumped IV curves and understand the physical conditions during the mixing process. We argue that the mixing is predominantly due to the strongly temperature dependent local resistivity of the NbN. Experimentally we identify the origins of different transition temperatures in a real HEB device, suggesting the importance of the intrinsic resistive transition of the superconducting bridge in the modeling. |
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1051-8223 |
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980 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
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Kinetics of electron and hole binding into excitons in germanium |
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Journal Article |
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1983 |
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Sov. Phys. JETP |
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Sov. Phys. JETP |
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57 |
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369-376 |
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Ge, electron and hole binding |
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The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states. |
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1711 |
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