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Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
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Title |
Cross section for binding of free carriers into excitons in germanium |
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Journal Article |
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Year |
1981 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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33 |
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11 |
Pages |
574 |
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Ge, excitons, photoconductivity |
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1718 |
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Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. |
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Title |
Energy relaxation of two-dimensional electrons in the quantum Hall effect regime |
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Journal Article |
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Year |
2000 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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71 |
Issue |
1 |
Pages |
31-34 |
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Keywords |
2DEG, GaAs/AlGaAs heterostructures |
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Abstract |
The mm-wave spectroscopy with high temporal resolution is used to measure the energy relaxation times τe of 2D electrons in GaAs/AlGaAs heterostructures in magnetic fields B=0–4 T under quasi-equilibrium conditions at T=4.2 K. With increasing B, a considerable increase in τe from 0.9 to 25 ns is observed. For high B and low values of the filling factor ν, the energy relaxation rate τ −1e oscillates. The depth of these oscillations and the positions of maxima depend on the filling factor ν. For ν>5, the relaxation rate τ −1e is maximum when the Fermi level lies in the region of the localized states between the Landau levels. For lower values of ν, the relaxation rate is maximum at half-integer values of τ −1e when the Fermi level is coincident with the Landau level. The characteristic features of the dependence τ −1e (B) are explained by different contributions of the intralevel and interlevel electron-phonon transitions to the process of the energy relaxation of 2D electrons. |
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0021-3640 |
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http://jetpletters.ru/ps/899/article_13838.shtml (“Энергетическая релаксация двумерных электронов в области квантового эффекта Холла”) |
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1559 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
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Title |
Investigation of free excitons in Ge and their condensation at submillimeter wavelengths |
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Journal Article |
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Year |
1976 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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43 |
Issue |
1 |
Pages |
116-122 |
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Keywords |
Ge, free excitons |
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Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system. |
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1731 |
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Author |
Goltsman, G. N.; Maliavkin, A. V.; Ptitsina, N. G.; Selevko, A. G. |
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Title |
Magnetic exciton spectroscopy in uniaxially compressed Ge at submillimeter waves |
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Conference Article |
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1986 |
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Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
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Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
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50 |
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280-281 |
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Ge, axial compression loads, excitons, germanium, magnetic spectroscopy, submillimeter waves, Zeeman effect |
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Russian |
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0367-6755 |
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3rd Vsesoiuznyi Seminar po Opticheskomu Detektirovaniiu Magnitnykh Rezonansov v Tverdykh Telakh, Kiev, Ukrainian SSR, May 1985 |
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1708 |
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Verevkin, A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.; Smirnov, K. S.; Sobolewski, R. |
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Direct measurements of energy relaxation times in two-dimensional structures under quasi-equilibrium conditions |
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Conference Article |
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2002 |
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Mater. Sci. Forum |
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Mater. Sci. Forum |
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384-3 |
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107-116 |
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Keywords |
2DEG, AlGaAs/GaAs |
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A new microwave technique was successfully applied for direct studies of energy relaxation times in two-dimensional AlGaAs/GaAs structures under quasi-equilibrium conditions in the nanosecond and picosecond time scale. We report our results of energy relaxation time measurements in the temperature range 1.6-50 K, in quantum Hall effect regime in magnetic fields up to 4 T. |
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Materials Science Forum |
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1536 |
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