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Gerecht, E., Musante, C. F., Zhuang, Y., Yngvesson, K. S., Gol’tsman, G. N., Voronov, B. M., et al. (1999). NbN hot electron bolometric mixerss—a new technology for low-noise THz receivers. IEEE Trans. Appl. Supercond., 47(12), 2519–2527.
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Blagosklonskaya, L. E., Gershenzon, E. M., Gol’tsman, G. N., & Elant’ev, A. I. (1978). Effect of a strong magnetic field on the spectrum of donors in InSb. Sov. Phys. Semicond., 11(12), 1395–1397.
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Ozhegov, R. V., Gorshkov, K. N., Okunev, O. V., & Gol’tsman, G. N. (2010). Superconducting hot-electron bolometer mixer as element of thermal imager matrix. Tech. Phys. Lett., 36(11), 1006–1008.
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Shangina, E. L., Smirnov, K. V., Morozov, D. V., Kovalyuk, V. V., Gol’tsman, G. N., Verevkin, A. A., et al. (2010). Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons. Semicond., 44(11), 1427–1429.
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Polyakova, O. N., Tikhonov, V. V., Dzardanov, A. L., Boyarskii, D. A., & Gol’tsman, G. N. (2008). Dielectric characteristics of ore minerals in a 10–40 GHz frequency range. Tech. Phys. Lett., 34(11), 967–970.
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Nebosis, R. S., Steinke, R., Lang, P. T., Schatz, W., Heusinger, M. A., Renk, K. F., et al. (1992). Picosecond YBa2Cu3O7−δdetector for far‐infrared radiation. J. Appl. Phys., 72(11), 5496–5499.
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Gol’tsman, G. N., & Gershenzon, E. M. (1999). Phonon-cooled hot-electron bolometric mixer: overview of recent results. Appl. Supercond., 6(10-12), 649–655.
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Kerman, A. J., Dauler, E. A., Yang, J. K. W., Rosfjord, K. M., Anant, V., Berggren, K. K., et al. (2007). Constriction-limited detection efficiency of superconducting nanowire single-photon detectors. Appl. Phys. Lett., 90(10), 101110 (1 to 3).
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Trifonov, V. A., Karasik, B. S., Zorin, M. A., Gol’tsman, G. N., Gershenzon, E. M., Lindgren, M., et al. (1996). 9.6 μm wavelength mixing in a patterned YBa2Cu3O7‐δ thin film. Appl. Phys. Lett., 68(10), 1418–1420.
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Shangina, E. L., Smirnov, K. V., Morozov, D. V., Kovalyuk, V. V., Gol’tsman, G. N., Verevkin, A. A., et al. (2010). Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures. Bull. Russ. Acad. Sci. Phys., 74(1), 100–102.
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