|
Records |
Links |
|
Author |
Воеводин, Е. И.; Гершензон, Е. М.; Гольцман, Г. Н.; Птицина, Н. Г. |
|
|
Title |
Энергетический спектр мелких акцепторов в сильно одноосно деформированном Ge |
Type |
Journal Article |
|
Year |
1989 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
|
|
Volume |
23 |
Issue |
8 |
Pages |
1356-1361 |
|
|
Keywords |
Ge, crystallography |
|
|
Abstract |
Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
Russian |
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
Duplicated as 1692 |
Approved |
no |
|
|
Call Number |
|
Serial |
1691 |
|
Permanent link to this record |
|
|
|
|
Author |
Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G. |
|
|
Title |
Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure |
Type |
Journal Article |
|
Year |
1989 |
Publication |
Sov. Phys. and Technics of Semiconductors |
Abbreviated Journal |
Sov. Phys. and Technics of Semiconductors |
|
|
Volume |
23 |
Issue |
8 |
Pages |
843-846 |
|
|
Keywords |
Ge, crystallography |
|
|
Abstract |
Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
Энергетический спектр мелких акцепторов в сильно одноосно деформированном Ge |
Approved |
no |
|
|
Call Number |
|
Serial |
1692 |
|
Permanent link to this record |
|
|
|
|
Author |
Гершензон, Е. М.; Гольцман, Г. Н.; Елантьев, А. И.; Кагане, М. Л.; Мултановский, В. В.; Птицина, Н. Г. |
|
|
Title |
Применение субмиллиметровой ЛОВ спектроскопии для определения химической природы и концентрации примесей в чистых полупроводниках |
Type |
Journal Article |
|
Year |
1983 |
Publication |
Физика и техника полупроводников |
Abbreviated Journal |
Физика и техника полупроводников |
|
|
Volume |
17 |
Issue |
8 |
Pages |
1430-1437 |
|
|
Keywords |
BWO spectroscopy, pure semiconductors, residual impurities |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
Russian |
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
Duplicated as 1714 |
Approved |
no |
|
|
Call Number |
|
Serial |
1712 |
|
Permanent link to this record |
|
|
|
|
Author |
Gershenson, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Kagane, M. L.; Multanovskii, V. V.; Ptitsina, N. G. |
|
|
Title |
Use of submillimeter backward-wave tube spectroscopy in determination of the chemical nature and concentration of residual impurities in pure semiconductors |
Type |
Journal Article |
|
Year |
1983 |
Publication |
Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
|
|
Volume |
17 |
Issue |
8 |
Pages |
908-913 |
|
|
Keywords |
BWO spectroscopy, pure semiconductors, residual impurities |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
Применение субмиллиметровой ЛОВ спектроскопии для определения химической природы и концентрации примесей в чистых полупроводниках |
Approved |
no |
|
|
Call Number |
|
Serial |
1714 |
|
Permanent link to this record |
|
|
|
|
Author |
Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. |
|
|
Title |
Germanium hot-electron narrow-band detector |
Type |
Journal Article |
|
Year |
1971 |
Publication |
Sov. Radio Engineering And Electronic Physics |
Abbreviated Journal |
Sov. Radio Engineering And Electronic Physics |
|
|
Volume |
16 |
Issue |
8 |
Pages |
1346 |
|
|
Keywords |
Ge HEB detectors |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037 |
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1741 |
|
Permanent link to this record |
|
|
|
|
Author |
Lindgren, M.; Currie, M.; Zeng, W.-S.; Sobolewski, R.; Cherednichenko, S.; Voronov, B.; Gol'tsman, G. N. |
|
|
Title |
Picosecond response of a superconducting hot-electron NbN photodetector |
Type |
Journal Article |
|
Year |
1998 |
Publication |
Appl. Supercond. |
Abbreviated Journal |
Appl. Supercond. |
|
|
Volume |
6 |
Issue |
7-9 |
Pages |
423-428 |
|
|
Keywords |
NbN SSPD, SNSPD |
|
|
Abstract |
The ps optical response of ultrathin NbN photodetectors has been studied by electro-optic sampling. The detectors were fabricated by patterning ultrathin (3.5 nm thick) NbN films deposited on sapphire by reactive magnetron sputtering into either a 5×10 μm2 microbridge or 25 1 μm wide, 5 μm long strips connected in parallel. Both structures were placed at the center of a 4 mm long coplanar waveguide covered with Ti/Au. The photoresponse was studied at temperatures ranging from 2.15 K to 10 K, with the samples biased in the resistive (switched) state and illuminated with 100 fs wide laser pulses at 395 nm wavelength. At T=2.15 K, we obtained an approximately 100 ps wide transient, which corresponds to a NbN detector response time of 45 ps. The photoresponse can be attributed to the nonequilibrium electron heating effect, where the incident radiation increases the temperature of the electron subsystem, while the phonons act as the heat sink. The high-speed response of NbN devices makes them an excellent choice for an optoelectronic interface for superconducting digital circuits, as well as mixers for the terahertz regime. The multiple-strip detector showed a linear dependence on input optical power and a responsivity =3.9 V/W. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
0964-1807 |
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
1584 |
|
Permanent link to this record |
|
|
|
|
Author |
Гершензон, Е. М.; Гершензон, М. Е.; Гольцман, Г. Н.; Семенов, А. Д.; Сергеев, А. В. |
|
|
Title |
Неселективное воздействие электромагнитного излучения на сверхпроводящую пленку в резистивном состоянии |
Type |
Journal Article |
|
Year |
1982 |
Publication |
Письма в ЖЭТФ |
Abbreviated Journal |
Письма в ЖЭТФ |
|
|
Volume |
36 |
Issue |
7 |
Pages |
241-244 |
|
|
Keywords |
|
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
russian |
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
Duplicated as 1717 |
Approved |
no |
|
|
Call Number |
MSPU @ s @ |
Serial |
225 |
|
Permanent link to this record |
|
|
|
|
Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Elantiev, A. I.; Karasik, B. S.; Potoskuev, S. E. |
|
|
Title |
Intense electromagnetic radiation heating of electrons of a superconductor in the resistive state |
Type |
Journal Article |
|
Year |
1988 |
Publication |
Sov. J. Low Temp. Phys. |
Abbreviated Journal |
Sov. J. Low Temp. Phys. |
|
|
Volume |
14 |
Issue |
7 |
Pages |
414-420 |
|
|
Keywords |
HEB |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
Duplicated as 1697 |
Approved |
no |
|
|
Call Number |
|
Serial |
236 |
|
Permanent link to this record |
|
|
|
|
Author |
Gousev, Yu. P.; Gol'tsman, G. N.; Semenov, A. D.; Gershenzon, E. M.; Nebosis, R. S.; Heusinger, M. A.; Renk, K. F. |
|
|
Title |
Broadband ultrafast superconducting NbN detector for electromagnetic radiation |
Type |
Journal Article |
|
Year |
1994 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
|
|
Volume |
75 |
Issue |
7 |
Pages |
3695-3697 |
|
|
Keywords |
NbN HEB |
|
|
Abstract |
An ultrafast detector that is sensitive to radiation in a broad spectral range from submillimeter waves to visible light is reported. It consists of a structured NbN thin film cooled to a temperature below Tc (∼11 K). Using 20 ps pulses of a GaAs laser, we observed signal pulses with both rise and decay time of about 50 ps. From the analysis of a mixing experiment with submillimeter radiation we estimate an intrinsic response time of the detector of ∼12 ps. The sensitivity was found to be similar for the near‐infrared and submillimeter radiation. Broadband sensitivity and short response time are attributed to a quasiparticle heating effect. |
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
252 |
|
Permanent link to this record |
|
|
|
|
Author |
Elant'ev, A. I.; Karasik, B. S. |
|
|
Title |
Effect of high-frequency current on Nb superconductive film in resistive state |
Type |
Journal Article |
|
Year |
1989 |
Publication |
Sov. J. Low Temp. Phys. |
Abbreviated Journal |
Sov. J. Low Temp. Phys. |
|
|
Volume |
15 |
Issue |
7 |
Pages |
379-383 |
|
|
Keywords |
Nb HEB |
|
|
Abstract |
|
|
|
Address |
|
|
|
Corporate Author |
|
Thesis |
|
|
|
Publisher |
|
Place of Publication |
|
Editor |
|
|
|
Language |
|
Summary Language |
|
Original Title |
|
|
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
|
Series Volume |
|
Series Issue |
|
Edition |
|
|
|
ISSN |
|
ISBN |
|
Medium |
|
|
|
Area |
|
Expedition |
|
Conference |
|
|
|
Notes |
|
Approved |
no |
|
|
Call Number |
|
Serial |
882 |
|
Permanent link to this record |