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Shcherbatenko, M., Elezov, M., Manova, N., Sedykh, K., Korneev, A., Korneeva, Y., et al. (2021). Single-pixel camera with a large-area microstrip superconducting single photon detector on a multimode fiber. Appl. Phys. Lett., 118(18), 181103.
Abstract: High sensitivity imaging at the level of single photons is an invaluable tool in many areas, ranging from microscopy to astronomy. However, development of single-photon sensitive detectors with high spatial resolution is very non-trivial. Here we employ the single-pixel imaging approach and demonstrate a proof-of-principle single-pixel single-photon imaging setup. We overcome the problem of low light gathering efficiency by developing a large-area microstrip superconducting single photon detector coupled to a multi-mode optical fiber interface. We show that the setup operates well in the visible and near infrared spectrum, and is able to capture images at the single-photon level.
We thank Philipp Zolotov and Pavel Morozov for NbN film fabrication, ARC coating, and fiber coupling of the detector. We also thank Swabian Instruments GmbH and Dr. Helmut Fedder personally for the kindly provided experimental equipment (Time Tagger Ultra 8). The work in the part of SNSPD research and development was supported by the Russian Foundation for Basic Research Project No. 18-29-20100. The work in the part of the optical setup and imaging was supported by Russian Foundation for Basic Research Project No. 20-32-51004.
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Zhang, J., Boiadjieva, N., Chulkova, G., Deslandes, H., Gol'tsman, G. N., Korneev, A., et al. (2003). Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors. Electron. Lett., 39(14), 1086–1088.
Abstract: The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed.
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Zhang, J., Słysz, W., Pearlman, A., Verevkin, A., Sobolewski, R., Okunev, O., et al. (2003). Time delay of resistive-state formation in superconducting stripes excited by single optical photons. Phys. Rev. B, 67(13), 132508 (1 to 4).
Abstract: We have observed a 65(±5)-ps time delay in the onset of a resistive-state formation in 10-nm-thick, 130-nm-wide NbN superconducting stripes exposed to single photons. The delay in the photoresponse decreased to zero when the stripe was irradiated by multi-photon (classical) optical pulses. Our NbN structures were kept at 4.2 K, well below the material’s critical temperature, and were illuminated by 100-fs-wide optical pulses. The time-delay phenomenon has been explained within the framework of a model based on photon-induced generation of a hotspot in the superconducting stripe and subsequent, supercurrent-assisted, resistive-state formation across the entire stripe cross section. The measured time delays in both the single-photon and two-photon detection regimes agree well with theoretical predictions of the resistive-state dynamics in one-dimensional superconducting stripes.
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Lipatov, A., Okunev, O., Smirnov, K., Chulkova, G., Korneev, A., Kouminov, P., et al. (2002). An ultrafast NbN hot-electron single-photon detector for electronic applications. Supercond. Sci. Technol., 15(12), 1689–1692.
Abstract: We present the latest generation of our superconducting single-photon detector (SPD), which can work from ultraviolet to mid-infrared optical radiation wavelengths. The detector combines a high speed of operation and low jitter with high quantum efficiency (QE) and very low dark count level. The technology enhancement allows us to produce ultrathin (3.5 nm thick) structures that demonstrate QE hundreds of times better, at 1.55 μm, than previous 10 nm thick SPDs. The best, 10 × 10 μm2, SPDs demonstrate QE up to 5% at 1.55 μm and up to 11% at 0.86 μm. The intrinsic detector QE, normalized to the film absorption coefficient, reaches 100% at bias currents above 0.9 Ic for photons with wavelengths shorter than 1.3 μm.
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Maingault, L., Tarkhov, M., Florya, I., Semenov, A., Espiau de Lamaëstre, R., Cavalier, P., et al. (2010). Spectral dependency of superconducting single photon detectors. J. Appl. Phys., 107(11), 116103 (1 to 3).
Abstract: We investigate the effect of varying both incoming optical wavelength and width of NbN nanowires on the superconducting single photon detectors (SSPD) detection efficiency. The SSPD are current biased close to critical value and temperature fixed at 4.2 K, far from transition. The experimental results are found to verify with a good accuracy predictions based on the “hot spot model,” whose size scales with the absorbed photon energy. With larger optical power inducing multiphoton detection regime, the same scaling law remains valid, up to the three-photon regime. We demonstrate the validity of applying a limited number of measurements and using such a simple model to reasonably predict any SSPD behavior among a collection of nanowire device widths at different photon wavelengths. These results set the basis for designing efficient single photon detectors operating in the infrared (2–5 μm range).
This work was supported by European projects FP6 STREP “SINPHONIA” (Contract No. NMP4-CT-2005-16433) and IP “QAP” (Contract No. 15848).
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