| |
Records |
Links |
|
Author |
Dube, I.; Jiménez, D.; Fedorov, G.; Boyd, A.; Gayduchenko, I.; Paranjape, M.; Barbara, P. |
|
| |
Title |
Understanding the electrical response and sensing mechanism of carbon-nanotube-based gas sensors |
Type |
Journal Article |
| |
Year |
2015 |
Publication |
Carbon |
Abbreviated Journal |
Carbon |
|
| |
Volume |
87 |
Issue  |
|
Pages |
330-337 |
|
| |
Keywords |
carbon nanotubes, CNT detectors, field effect transistors, FET |
|
| |
Abstract |
Gas sensors based on carbon nanotube field effect transistors (CNFETs) have outstanding sensitivity compared to existing technologies. However, the lack of understanding of the sensing mechanism has greatly hindered progress on calibration standards and customization of these nano-sensors. Calibration requires identifying fundamental transistor parameters and establishing how they vary in the presence of a gas. This work focuses on modeling the electrical response of CNTFETs in the presence of oxidizing (NO2) and reducing (NH3) gases and determining how the transistor characteristics are affected by gas-induced changes of contact properties, such as the Schottky barrier height and width, and by the doping level of the nanotube. From the theoretical fits of the experimental transfer characteristics at different concentrations of NO2 and NH3, we find that the CNTFET response can be modeled by introducing changes in the Schottky barrier height. These changes are directly related to the changes in the metal work function of the electrodes that we determine experimentally, independently, with a Kelvin probe. Our analysis yields a direct correlation between the ON – current and the changes in the electrode metal work function. Doping due to molecules adsorbed at the carbon-nanotube/metal interface also affects the transfer characteristics. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
0008-6223 |
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
1778 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Lobanov, Y. V.; Vakhtomin, Y. B.; Pentin, I. V.; Khabibullin, R. A.; Shchavruk, N. V.; Smirnov, K. V.; Silaev, A. A. |
|
| |
Title |
Characterization of the THz quantum cascade laser using fast superconducting hot electron bolometer |
Type |
Journal Article |
| |
Year |
2018 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
|
| |
Volume |
195 |
Issue |
|
Pages |
04004 (1 to 2) |
|
| |
Keywords |
NbN HEB, QCL |
|
| |
Abstract |
|
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
2100-014X |
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
3rd International Conference “Terahertz and Microwave Radiation: Generation, Detection and Applications” (TERA-2018) |
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
|
Serial |
1808 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Zolotov, P. I.; Vakhtomin, Yu. B.; Divochiy, A. V.; Seleznev, V. A.; Smirnov, K. V. |
|
| |
Title |
Technology development of resonator-based structures for efficiency increasing of NBN detectors of IR single photons |
Type |
Journal Article |
| |
Year |
2016 |
Publication |
Proc. 5th Int. Conf. Photonics and Information Optics |
Abbreviated Journal |
Proc. 5th Int. Conf. Photonics and Information Optics |
|
| |
Volume |
|
Issue |
|
Pages |
115-116 |
|
| |
Keywords |
NbN SSPD |
|
| |
Abstract |
This paper presents a technology of fabrication of NbN superconductive single- photon detectors, using resonator structures. The main results are related to optimization of the process of NbN sputtering over substrate with metallic mirrors and SiO 2 /Si 3 N 4 layers /4 thick. Investigation of the quantum efficiency of fabricated devices at 1.6 K on 1.55 μm showed triple-magnified value compared to standard Si/NbN structures. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
Russian |
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
|
ISBN |
978-5-7262-2215-8 |
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
http://fioconf.mephi.ru/files/2015/12/FIO2016-Sbornik.pdf Разработка технологии создания резонаторных структур для увеличения квантовой эффективности NBN детекторов ИК-фотонов |
Approved |
no |
|
| |
Call Number |
|
Serial |
1811 |
|
| Permanent link to this record |
