Records |
Author |
Zhang, Jin; Slysz, W.; Verevkin, A.; Okunev, O.; Chulkova, G.; Korneev, A.; Lipatov, A.; Gol'tsman, G. N.; Sobolewski, R. |
Title |
Response time characterization of NbN superconducting single-photon detectors |
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Journal Article |
Year |
2003 |
Publication |
IEEE Trans. Appl. Supercond. |
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Volume |
13 |
Issue ![sorted by Issue field, descending order (down)](img/sort_desc.gif) |
2 |
Pages |
180-183 |
Keywords |
SSPD jitter, SNSPD jitter |
Abstract |
We report our time-resolved measurements of NbN-based superconducting single-photon detectors. The structures are meander-type, 10-nm thick, and 200-nm wide stripes and were operated at 4.2 K. We have shown that the NbN devices can count single-photon pulses with below 100-ps time resolution. The response signal pulse width was about 150 ps, and the system jitter was measured to be 35 ps. |
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IEEE |
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1058 |
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Pearlman, A.; Cross, A.; Slysz, W.; Zhang, J.; Verevkin, A.; Currie, M.; Korneev, A.; Kouminov, P.; Smirnov, K.; Voronov, B.; Gol’tsman, G.; Sobolewski, R. |
Title |
Gigahertz counting rates of NbN single-photon detectors for quantum communications |
Type |
Journal Article |
Year |
2005 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
Volume |
15 |
Issue ![sorted by Issue field, descending order (down)](img/sort_desc.gif) |
2 |
Pages |
579-582 |
Keywords |
NbN SSPD, SNSPD |
Abstract |
We report on the GHz counting rate and jitter of our nanostructured superconducting single-photon detectors (SSPDs). The devices were patterned in 4-nm-thick and about 100-nm-wide NbN meander stripes and covered a 10-/spl mu/m/spl times/10-/spl mu/m area. We were able to count single photons at both the visible and infrared telecommunication wavelengths at rates of over 2 GHz with a timing jitter of below 18 ps. We also present the model for the origin of the SSPD switching dynamics and jitter, based on the time-delay effect in the phase-slip-center formation mechanism during the detector photoresponse process. With further improvements in our readout electronics, we expect that our SSPDs will reach counting rates of up to 10 GHz. An integrated quantum communications receiver based on two fiber-coupled SSPDs and operating at 1550-nm wavelength is also presented. |
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1558-2515 |
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1465 |
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Yang, J. K. W.; Dauler, E.; Ferri, A.; Pearlman, A.; Verevkin, A.; Gol’tsman, G.; Voronov, B.; Sobolewski, R.; Keicher, W. E.; Berggren, K. K. |
Title |
Fabrication development for nanowire GHz-counting-rate single-photon detectors |
Type |
Journal Article |
Year |
2005 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
Volume |
15 |
Issue ![sorted by Issue field, descending order (down)](img/sort_desc.gif) |
2 |
Pages |
626-630 |
Keywords |
NbN SSPD, SNSPD |
Abstract |
We have developed a fabrication process for GHz-counting-rate, single-photon, high-detection-efficiency, NbN, nanowire detectors. We have demonstrated two processes for the device patterning, one based on the standard polymethylmethacrylate (PMMA) organic positive-tone electron-beam resist, and the other based on the newer hydrogen silsesquioxane (HSQ) negative-tone spin-on-glass resist. The HSQ-based process is simple and robust, providing high resolution and the prospect of high fill-factors. Initial testing results show superconductivity in the films, and suggest that the devices exhibit photosensitivity. |
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1466 |
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Korneev, A.; Matvienko, V.; Minaeva, O.; Milostnaya, I.; Rubtsova, I.; Chulkova, G.; Smirnov, K.; Voronov, V.; Gol’tsman, G.; Slysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R. |
Title |
Quantum efficiency and noise equivalent power of nanostructured, NbN, single-photon detectors in the wavelength range from visible to infrared |
Type |
Journal Article |
Year |
2005 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
Volume |
15 |
Issue ![sorted by Issue field, descending order (down)](img/sort_desc.gif) |
2 |
Pages |
571-574 |
Keywords |
NbN SSPD, SNSPD, QE, NEP |
Abstract |
We present our studies on the quantum efficiency (QE) and the noise equivalent power (NEP) of the latest-generation, nanostructured, superconducting, single-photon detectors (SSPDs) in the wavelength range from 0.5 to 5.6 /spl mu/m, operated at temperatures in the 2.0- to 4.2-K range. Our detectors are designed as 4-nm-thick and 100-nm-wide NbN meander-shaped stripes, patterned by electron-beam lithography and cover a 10/spl times/10-/spl mu/m/sup 2/ active area. The best-achieved QE at 2.0 K for 1.55-/spl mu/m photons is 17%, and QE for 1.3-/spl mu/m infrared photons reaches its saturation value of /spl sim/30%. The SSPD NEP at 2.0 K is as low as 5/spl times/10/sup -21/ W/Hz/sup -1/2/. Our nanostructured SSPDs, operated at 2.0 K, significantly outperform their semiconducting counterparts, and, together with their GHz counting rate and picosecond timing jitter, they are devices-of-choice for practical quantum key distribution systems and free-space (even interplanetary) quantum optical communications. |
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1558-2515 |
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1467 |
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Gol’tsman, G. N.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Drakinsky, V.; Zhang, J.; Verevkin, A.; Sobolewski, R. |
Title |
Fabrication of nanostructured superconducting single-photon detectors |
Type |
Journal Article |
Year |
2003 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
Volume |
13 |
Issue ![sorted by Issue field, descending order (down)](img/sort_desc.gif) |
2 |
Pages |
192-195 |
Keywords |
NbN SSPD, SNSPD |
Abstract |
Fabrication of NbN superconducting single-photon detectors, based on the hotspot effect is presented. The hotspot formation arises in an ultrathin and submicrometer-width superconductor stripe and, together with the supercurrent redistribution, leads to the resistive detector response upon absorption of a photon. The detector has a meander structure to maximally increase its active area and reach the highest detection efficiency. Main processing steps, leading to efficient devices, sensitive in 0.4-5 /spl mu/m wavelength range, are presented. The impact of various processing steps on the performance and operational parameters of our detectors is discussed. |
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1515 |
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Author |
Il'in, K. S.; Currie, M.; Lindgren, M.; Milostnaya, I. I.; Verevkin, A. A.; Gol'tsman, G. N.; Sobolewski, R. |
Title |
Quantum efficiency and time-domain response of superconducting NbN hot-electron photodetectors |
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Journal Article |
Year |
1999 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
Volume |
9 |
Issue ![sorted by Issue field, descending order (down)](img/sort_desc.gif) |
2 |
Pages |
3338-3341 |
Keywords |
NbN SSPD, SNSPD |
Abstract |
We report our studies on the response of ultrathin superconducting NbN hot-electron photodetectors. We have measured the photoresponse of few-nm-thick, micron-size structures, which consisted of single and multiple microbridges, to radiation from the continuous-wave semiconductor laser and the femtosecond Ti:sapphire laser with the wavelength of 790 nm and 400 nm, respectively. The maximum responsivity was observed near the film's superconducting transition with the device optimally current-biased in the resistive state. The responsivity of the detector, normalized to its illuminated area and the coupling factor, was 220 A/W(3/spl times/10/sup 4/ V/W), which corresponded to a quantum efficiency of 340. The responsivity was wavelength independent from the far infrared to the ultraviolet range, and was at least two orders of magnitude higher than comparable semiconductor optical detectors. The time constant of the photoresponse signal was 45 ps, when was measured at 2.15 K in the resistive (switched) state using a cryogenic electro-optical sampling technique with subpicosecond resolution. The obtained results agree very well with our calculations performed using a two-temperature model of the electron heating in thin superconducting films. |
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1051-8223 |
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Call Number |
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1566 |
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Author |
Zhang, J.; Boiadjieva, N.; Chulkova, G.; Deslandes, H.; Gol'tsman, G. N.; Korneev, A.; Kouminov, P.; Leibowitz, M.; Lo, W.; Malinsky, R.; Okunev, O.; Pearlman, A.; Slysz, W.; Smirnov, K.; Tsao, C.; Verevkin, A.; Voronov, B.; Wilsher, K.; Sobolewski, R. |
Title |
Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors |
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Journal Article |
Year |
2003 |
Publication |
Electron. Lett. |
Abbreviated Journal |
Electron. Lett. |
Volume |
39 |
Issue ![sorted by Issue field, descending order (down)](img/sort_desc.gif) |
14 |
Pages |
1086-1088 |
Keywords |
NbN SSPD, SNSPD, applications |
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The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed. |
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0013-5194 |
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1512 |
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Author |
Zhang, J.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R.; Okunev, O.; Chulkova, G.; Gol’tsman, G. N. |
Title |
Time delay of resistive-state formation in superconducting stripes excited by single optical photons |
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Journal Article |
Year |
2003 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
Volume |
67 |
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13 |
Pages |
132508 (1 to 4) |
Keywords |
NbN SSPD, SNSPD |
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We have observed a 65(±5)-ps time delay in the onset of a resistive-state formation in 10-nm-thick, 130-nm-wide NbN superconducting stripes exposed to single photons. The delay in the photoresponse decreased to zero when the stripe was irradiated by multi-photon (classical) optical pulses. Our NbN structures were kept at 4.2 K, well below the material’s critical temperature, and were illuminated by 100-fs-wide optical pulses. The time-delay phenomenon has been explained within the framework of a model based on photon-induced generation of a hotspot in the superconducting stripe and subsequent, supercurrent-assisted, resistive-state formation across the entire stripe cross section. The measured time delays in both the single-photon and two-photon detection regimes agree well with theoretical predictions of the resistive-state dynamics in one-dimensional superconducting stripes. |
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0163-1829 |
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1519 |
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Lipatov, A.; Okunev, O.; Smirnov, K.; Chulkova, G.; Korneev, A.; Kouminov, P.; Gol'tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, R. |
Title |
An ultrafast NbN hot-electron single-photon detector for electronic applications |
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Journal Article |
Year |
2002 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
Volume |
15 |
Issue ![sorted by Issue field, descending order (down)](img/sort_desc.gif) |
12 |
Pages |
1689-1692 |
Keywords |
NbN SSPD, SNSPD, QE, jitter, dark counts |
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We present the latest generation of our superconducting single-photon detector (SPD), which can work from ultraviolet to mid-infrared optical radiation wavelengths. The detector combines a high speed of operation and low jitter with high quantum efficiency (QE) and very low dark count level. The technology enhancement allows us to produce ultrathin (3.5 nm thick) structures that demonstrate QE hundreds of times better, at 1.55 μm, than previous 10 nm thick SPDs. The best, 10 × 10 μm2, SPDs demonstrate QE up to 5% at 1.55 μm and up to 11% at 0.86 μm. The intrinsic detector QE, normalized to the film absorption coefficient, reaches 100% at bias currents above 0.9 Ic for photons with wavelengths shorter than 1.3 μm. |
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0953-2048 |
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Call Number |
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1533 |
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Verevkin, A. A.; Ptitsina, N. G.; Chulcova, G. M.; Gol'Tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
Title |
Determination of the limiting mobility of a two-dimensional electron gas in AlxGa1-xAs/GaAs heterostructures and direct measurement of the energy relaxation time |
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Journal Article |
Year |
1996 |
Publication |
Phys. Rev. B Condens. Matter. |
Abbreviated Journal |
Phys. Rev. B Condens. Matter. |
Volume |
53 |
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12 |
Pages |
R7592-R7595 |
Keywords |
2DEG, AlGaAs/GaAs heterostructures |
Abstract |
We present results for a method to measure directly the energy relaxation time (τe) for electrons in a single AlxGa1−xAs/GaAs heterojunction; measurements were performed from 1.6 to 15 K under quasiequilibrium conditions. We find τeαT−1 below 4 K, and τe independent of T above 4 K. We have also measured the energy-loss rate, ⟨Q⟩, by the Shubnikov-de Haas technique, and find ⟨Q⟩α(T3e−T3) for T<~4.2 K; Te is the electron temperature. The values and temperature dependence of τe and ⟨Q⟩ for T<4 K agree with calculations based on piezoelectric and deformation potential acoustic phonon scattering. At 4.2 K, we can also estimate the momentum relaxation time, τm, from our measured τe. This leads to a preliminary estimate of the phonon-limited mobility at 4.2 K of μ=3×107 cm2/Vs (ns=4.2×1011 cm−2), which agrees well with published numerical calculations, as well as with an earlier indirect estimate based on measurements on a sample with much higher mobility. |
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0163-1829 |
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PMID:9982274 |
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1612 |
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