| Records |
| Author |
Angeluts, A. A.; Bezotosnyi, V. V.; Cheshev, E. A.; Goltsman, G. N.; Finkel, M. I.; Seliverstov, S. V.; Evdokimov, M. N.; Gorbunkov, M. V.; Kitaeva, G. Kh.; Koromyslov, A. L.; Kostryukov, P. V.; Krivonos, M. S.; Lobanov, Yu. V.; Shkurinov, A. P.; Sarkisov, S. Yu.; Tunkin, V. G. |
| Title |
Compact 1.64 THz source based on a dual-wavelength diode end-pumped Nd:YLF laser with a nearly semiconfocal cavity |
Type |
Journal Article |
| Year |
2014 |
Publication |
Laser Phys. Lett. |
Abbreviated Journal |
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| Volume |
11 |
Issue  |
1 |
Pages |
015004 (1 to 4) |
| Keywords |
HEB applications, HEB detector applications, short THz pulses detection |
| Abstract |
We describe a compact dual-wavelength (1.047 and 1.053 μm) diode end-pumped Q-switched Nd:YLE laser source which has a number of applications in demand. In order to achieve its dual-wavelength operation it is suggested for the first time to use essentially nonmonotonous dependences of the threshold pump powers at these wavelengths on the cavity length in the region of the cavity semiconfocal configuration under a radius of the pump beam smaller than the radius of the zero Gaussian mode. Here we demonstrate one of the most interesting applications for this laser: difference frequency generation in a GaSe crystal at a frequency of 1.64 THz. A superconducting hot-electron bolometer is used to detect the THz power generated and to measure its pulse characteristics. |
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1076 |
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Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. |
| Title |
Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures |
Type |
Journal Article |
| Year |
2010 |
Publication |
Bull. Russ. Acad. Sci. Phys. |
Abbreviated Journal |
Bull. Russ. Acad. Sci. Phys. |
| Volume |
74 |
Issue |
1 |
Pages |
100-102 |
| Keywords |
2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth |
| Abstract |
The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering. |
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1062-8738 |
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1217 |
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Nebosis, R. S.; Heusinger, M. A.; Schatz, W.; Renk, K. F.; Gol’tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M. |
| Title |
Ultrafast photoresponse of a structured YBa2Cu3O7-δ thin film to ultrashort FIR laser pulses |
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Journal Article |
| Year |
1993 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
3 |
Issue |
1 |
Pages |
2160-2162 |
| Keywords |
YBCO HTS detectors |
| Abstract |
The authors have investigated the photoinduced voltage response of a current-carrying structured YBa2Cu3O7-δ thin film to ultrashort far-infrared (FIR) laser pulses in the frequency range from 0.7 THz to 7 THz. The detector has shown an almost constant sensitivity of 1 mV/W and a noise equivalent power of less than 5*10/sup -7/ W/ square root Hz. The temperature dependence of the decay time of the detector signal was studied for temperatures around the transition temperature of the film ( approximately 80 K). For a detector temperature where dR/dT had its maximum, the authors observed bolometric signals with decay times of about 2 ns, and for lower temperatures they observed nonbolometric signals with decay times of approximately 120 ps; the duration of the nonbolometric signals was limited by the time resolution of the electronic registration equipment. |
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1658 |
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Semenov, A. D.; Goghidze, I. G.; Gol’tsman, G. N.; Sergeev, A. V.; Aksaev, E. E.; Gershenzon, E. M. |
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Non-equilibrium quasiparticle response to radiation and bolometric effect in YBaCuO films |
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Journal Article |
| Year |
1993 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
3 |
Issue |
1 |
Pages |
2132-2135 |
| Keywords |
YBCO HTS HEB detectors |
| Abstract |
The voltage photoresponse of structured current biased YBCO films on different substrates to 20-ps laser pulses of 0.63- mu m and 1.54- mu m wavelengths and to continuously modulated radiation of 2-mm wavelength is measured to temperatures around Tc. Fast picosecond decay of the response to pulsed radiation is followed by slow exponential relaxation with a nanosecond characteristic time depending on the substrate material and film dimensions. The slow component does not depend on wavelength and is attributed to the bolometric effect, while the magnitude of the fast component associated with nonequilibrium response rises with wavelength. More than an order-of-magnitude increase of the nonequilibrium response is seen from near-infrared to millimeter-wave range. This dependence plausibly reflects the low efficiency of multiplication of photoexcited electrons in YBaCuO compared to conventional superconductors. |
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1558-2515 |
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1659 |
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Kostiuk, Theodor |
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Heterodyne spectroscopy in the thermal infrared region: a window on physics and chemistry |
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Conference Article |
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2003 |
Publication |
Proc. International Thermal Detectors Workshop (TDW'03), session 7 (Heterodyne detectors) |
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HgCdTe detector |
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3501 University Boulevar East Adelphi, MD 20783 |
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University of Maryland Inn and Conference Center |
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372 |
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Heeres, R.W.; Dorenbos, S.N.; Koene, B.; Solomon, G.S.; Kouwenhoven, L.P.; Zwiller, V. |
| Title |
On-Chip Single Plasmon Detection |
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Journal Article |
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2010 |
Publication |
Nano Letters |
Abbreviated Journal |
Nano Lett. |
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10 |
Issue |
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Pages |
661-664 |
| Keywords |
optical antennas; SSPD; Single surface plasmons; superconducting detectors; semiconductor quantum dots; nanophotonics |
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Surface plasmon polaritons (plasmons) have the potential to interface electronic and optical devices. They could prove extremely useful for integrated quantum information processing. Here we demonstrate on-chip electrical detection of single plasmons propagating along gold waveguides. The plasmons are excited using the single-photon emission of an optically emitting quantum dot. After propagating for several micrometers, the plasmons are coupled to a superconducting detector in the near-field. Correlation measurements prove that single plasmons are being detected. |
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RPLAB @ akorneev @ |
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620 |
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Gershenson, M. E.; Gong, D.; Sato, T.; Karasik, B. S.; Sergeev, A. V. |
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Millisecond electron-phonon relaxation in ultrathin disordered metal films at millikelvin temperatures |
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Journal Article |
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2001 |
Publication |
Appl. Phys. Lett. |
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79 |
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2049-2051 |
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HEB detector, FIR, far infrared |
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RPLAB @ s @ heb_eph_interaction_Gershenzon |
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315 |
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Siemsen, K. J.; Bernard, J. E.; Madej, A. A.; Marmet, L. |
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Absolute frequency measurement of a CO2/OsO4 stabilized laser at 28.8 THz |
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Journal Article |
| Year |
2001 |
Publication |
Applied Physics B: Lasers and Optics |
Abbreviated Journal |
Appl. Phys. B: Lasers and Optics |
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72 |
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567-573 |
| Keywords |
HgCdTe detector |
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462 |
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Zhou, Y.D.; Becker, C. R.; Ashokan, R.; Selamet, Y.; Chang, Y.; Boreiko, R. T.; Betz, A. L.; Sivananthan, S. |
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Progress in far-infrared detection technology |
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Conference Article |
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2002 |
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Proc. SPIE |
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4795 |
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121-128 |
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HgCdTe/CdTe, detector |
| Abstract |
II-VI intrinsic very long wavelength infrared (VLWIR, λc~20 to 50 μm) materials, HgCdTe alloys as well as HgCdTe/CdTe superlattices, were grown by molecular beam epitaxy (MBE). The layers were characterized by means of X-ray diffraction, conventional Fourier transform infrared spectroscopy, Hall effect measurements and transmittance electron microscopy (TEM). Photoconductor devices were processed and their spectral response was also measured to demonstrate their applicability in the VLWIR region. |
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Longshore, R. E.; Sivananthan, S. |
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Society of Photo-Optical Instrumentation Engineers (SPIE) Conference Series |
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471 |
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InSb detectors technical data sheet |
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Miscellaneous |
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2003 |
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InSb, detector |
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476 |
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