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	Author	Vachtomin, Yu. B.; Antipov, S. V.; Kaurova, N. S.; Maslennikov, S. N.; Smirnov, K. V.; Polyakov, S. L.; Svechnikov, S. I.; Grishina, E. V.; Voronov, B. M.; Gol'tsman, G. N.
	Title	Noise temperature, gain bandwidth and local oscillator power of NbN phonon-cooled HEB mixer at terahertz frequenciess			Type	Conference Article
	Year	2004	Publication	Proc. 29th IRMMW / 12th THz	Abbreviated Journal	Proc. 29th IRMMW / 12th THz
	Volume		Issue		Pages	329-330
	Keywords
	Abstract	We present the performances of HEB mixers based on 3.5 nm thick NbN film integrated with log-periodic spiral antenna. The double side-band receiver noise temperature values are 1300 K and 3100 K at 2.5 THz and at 3.8 THz, respectively. The gain bandwidth of the mixer is 4.2 GHz and the noise bandwidth is 5 GHz. The local oscillator power is 1-3 /spl mu/W for mixers with different active area.
	Address	Karlsruhe, Germany
	Corporate Author				Thesis
	Publisher		Place of Publication	Karlsruhe, Germany	Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ s @ nt_ifb_lopow_qoheb_karlsruhe_2004			Serial	354
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	Author	Morozov, D. V.; Smirnov, K. V.; Smirnov, A. V.; Lyakhov, V. A.; Goltsman, G. N.
	Title	A millimeter-submillimeter phonon-cooled hot-electron bolometer mixer based on two-dimensional electron gas in an AlGaAs/GaAs heterostructure			Type	Journal Article
	Year	2005	Publication	Semicond.	Abbreviated Journal	Semicond.
	Volume	39	Issue	9	Pages	1082-1086
	Keywords	2D electron gas, AlGaAs/GaAs heterostructures, mixers
	Abstract	Experimental results obtained by studying the main characteristics of a millimeter-submillimeter wave mixer based on the hot-electron effect in a two-dimensional electron gas in a AlGaAs/GaAs heterostructure with a phonon-scattering cooling mechanism for charge carriers are reported. The gain bandwidth of the mixer is 4 GHz, the internal conversion losses are 13 dB, and the optimum local-oscillator power is 0.5 μW (for a mixer area of 1 μm2). It is shown that a millimeter-submillimeter-wave receiver with a noise temperature of 1900 K can be developed on the basis of a AlGaAs/GaAs mixer. This mixer also appears to be promising for use in array receiver elements.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1063-7826	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1463
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	Author	Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I.
	Title	Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures			Type	Journal Article
	Year	2010	Publication	Bull. Russ. Acad. Sci. Phys.	Abbreviated Journal	Bull. Russ. Acad. Sci. Phys.
	Volume	74	Issue	1	Pages	100-102
	Keywords	2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth
	Abstract	The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1062-8738	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1217
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	Author	Gol’tsman, G. N.; Smirnov, K. V.
	Title	Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures			Type	Journal Article
	Year	2001	Publication	Jetp Lett.	Abbreviated Journal	Jetp Lett.
	Volume	74	Issue	9	Pages	474-479
	Keywords	2DEG, AlGaAs/GaAs heterostructures
	Abstract	Theoretical and experimental works devoted to studying electron-phonon interaction in the two-dimensional electron gas of semiconductor heterostructures at low temperatures in the case of strong heating in an electric field under quasi-equilibrium conditions and in a quantizing magnetic field perpendicular to the 2D layer are considered.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0021-3640	ISBN		Medium
	Area		Expedition		Conference
	Notes	По итогам проектов российского фонда фундаментальных исследований. Проект РФФИ # 98-02-16897 Электрон-фононное взаимодействие в двумерном электронном газе полупроводниковых гетероструктур при низких температурах			Approved	no
	Call Number				Serial	1541
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	Author	Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S.
	Title	Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts			Type	Journal Article
	Year	1999	Publication	Semicond.	Abbreviated Journal	Semicond.
	Volume	33	Issue	5	Pages	551-554
	Keywords	2DEG, AlGaAs/GaAs heterostructures
	Abstract	The conductivity of hybrid microstructures with superconducting contacts made of niobium nitride to a semiconductor with a two-dimensional electron gas in a AlGaAs/GaAs heterostructure has been investigated. Distinctive features of the behavior of the conductivity indicate the presence of multiple Andreev reflection at scattering centers in the normal region near the superconductor-semiconductor boundary.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1063-7826	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1571
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	Author	Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Goltsman, G. N.; Gershenson, E. M.; Yngvesson, K. S.
	Title	Direct measurements of electron energy relaxation times at an AlGaAs/GaAs heterointerface in the optical phonon scattering range			Type	Conference Article
	Year	1997	Publication	Proc. 4-th Int. Semicond. Device Research Symp.	Abbreviated Journal	Proc. 4-th Int. Semicond. Device Research Symp.
	Volume		Issue		Pages	55-58
	Keywords	2DEG, AlGaAs/GaAs heterostructures
	Abstract
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1602
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	Author	Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Gol’tsman, G. N.; Gershenzon, E. M.; Ingvesson, K. S.
	Title	Direct measurements of energy relaxation times on an AlGaAs/GaAs heterointerface in the range 4.2–50 K			Type	Journal Article
	Year	1996	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	64	Issue	5	Pages	404-409
	Keywords	2DEG, AlGaAs/GaAs heterostructures
	Abstract	The temperature dependence of the energy relaxation time τe (T) of a two-dimensional electron gas at an AlGaAs/GaAs heterointerface is measured under quasiequilibrium conditions in the region of the transition from scattering by acoustic phonons to scattering with the participation of optical phonons. The temperature interval of constant τe, where scattering by the deformation potential predominates, is determined. In the preceding, low-temperature region, where piezoacoustic and deformation-potential-induced scattering processes coexist, τ e decreases slowly with increasing temperature. Optical phonons start to participate in the scattering processes at T∼25 K (the characteristic phonon lifetime was equal to τLOτ4.5 ps). The energy losses calculated from the τe data in a model with an effective nonequilibrium electron temperature agree with the published data obtained under strong heating conditions.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0021-3640	ISBN		Medium
	Area		Expedition		Conference
	Notes	http://jetpletters.ru/ps/981/article_14955.shtml (“Прямые измерения времен энергетической релаксации на гетерогранице AlGaAs/GaAs в диапазоне 4.2 – 50 К”)			Approved	no
	Call Number				Serial	1608
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	Author	Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I.
	Title	Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons			Type	Journal Article
	Year	2010	Publication	Semicond.	Abbreviated Journal	Semicond.
	Volume	44	Issue	11	Pages	1427-1429
	Keywords	2DEG, AlGaAs/GaAs heterostructures mixers
	Abstract	The temperature and concentration dependences of the frequency bandwidth of terahertz heterodyne AlGaAs/GaAs detectors based on hot electron phenomena with phonon cooling of two-dimensional electrons have been measured by submillimeter spectroscopy with a high time resolution. At a temperature of 4.2 K, the frequency bandwidth at a level of 3 dB (f 3 dB) is varied from 150 to 250 MHz with a change in the concentration n s according to the power law f 3dB ∝ n −0.5 s due to the dominant contribution of piezoelectric phonon scattering. The minimum conversion loss of the semiconductor heterodyne detector is obtained in structures with a high carrier mobility (μ > 3 × 105 cm2 V−1 s−1 at 4.2 K).
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1063-7826	ISBN		Medium
	Area		Expedition		Conference
	Notes	Полоса и потери преобразования полупроводникового смесителя с фононным каналом охлаждения двумерных электронов			Approved	no
	Call Number				Serial	1216
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	Author	Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M.
	Title	Energy relaxation of two-dimensional electrons in the quantum Hall effect regime			Type	Journal Article
	Year	2000	Publication	JETP Lett.	Abbreviated Journal	JETP Lett.
	Volume	71	Issue	1	Pages	31-34
	Keywords	2DEG, GaAs/AlGaAs heterostructures
	Abstract	The mm-wave spectroscopy with high temporal resolution is used to measure the energy relaxation times τe of 2D electrons in GaAs/AlGaAs heterostructures in magnetic fields B=0–4 T under quasi-equilibrium conditions at T=4.2 K. With increasing B, a considerable increase in τe from 0.9 to 25 ns is observed. For high B and low values of the filling factor ν, the energy relaxation rate τ −1e oscillates. The depth of these oscillations and the positions of maxima depend on the filling factor ν. For ν>5, the relaxation rate τ −1e is maximum when the Fermi level lies in the region of the localized states between the Landau levels. For lower values of ν, the relaxation rate is maximum at half-integer values of τ −1e when the Fermi level is coincident with the Landau level. The characteristic features of the dependence τ −1e (B) are explained by different contributions of the intralevel and interlevel electron-phonon transitions to the process of the energy relaxation of 2D electrons.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0021-3640	ISBN		Medium
	Area		Expedition		Conference
	Notes	http://jetpletters.ru/ps/899/article_13838.shtml (“Энергетическая релаксация двумерных электронов в области квантового эффекта Холла”)			Approved	no
	Call Number				Serial	1559
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	Author	Maslennikov, S. N.; Morozov, D. V.; Ozhegov, R. V.; Smirnov, K. V.; Okunev, O. V.; Gol’tsman, G. N.
	Title	Imaging system for submillimeter wave range based on AlGaAs/GaAs hot electron bolometer mixers			Type	Conference Article
	Year	2004	Publication	Proc. 5-th MSMW	Abbreviated Journal	Proc. 5-th MSMW
	Volume	2	Issue		Pages	558-560
	Keywords	AlGaAs/GaAs HEB mixers
	Abstract	Electromagnetic radiation of the submillimeter (SMM) range is dispersed and absorbed significantly less than infrared (IR) radiation when passing through different objects. That is the reason for the development of an SMM imaging system. In this paper, we discuss the design of an SMM heterodyne imager, based on a matrix of AlGaAs/GaAs heterostructure hot electron bolometer mixers (HEB) with relatively high (about 77 K) operating temperature. The predicted double side band (DSB) noise temperature is about 1000 K and optimal local oscillator (LO) power is about 1 /spl mu/W for such mixers, which seems to be quite prospective for an SMM heterodyne imager.
	Address	Kharkov, Ukraine
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference	The Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves (IEEE Cat. No.04EX828)
	Notes				Approved	no
	Call Number				Serial	1487
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	Author	Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Goltsman, G. N.; Verevkin, A. A.; Toropov, A. I.; Mauskopf, P.
	Title	Concentration dependence of energy relaxation time in AlGaAs/GaAs heterojunctions: direct measurements			Type	Journal Article
	Year	2011	Publication	Semicond. Sci. Technol.	Abbreviated Journal	Semicond. Sci. Technol.
	Volume	26	Issue	2	Pages	025013
	Keywords	AlGaAs/GaAs heterojunctions
	Abstract	We present measurements of the energy relaxation time, τε, of electrons in a single heterojunction in a quasi-equilibrium state using microwave time-resolved spectroscopy at 4.2 K. We find the relaxation time has a power-law dependence on the carrier density of the two-dimensional electron gas, τε∝nγs with γ = 0.40 ± 0.02 for values of the carrier density, ns, from 1.6 × 1011 to 6.6 × 1011cm−2. The results are in good agreement with predictions taking into account the scattering of the carriers by both piezoelectric and deformation potential acoustic phonons. We compare these results with indirect measurements of the energy relaxation time from energy loss measurements involving Joule heating of the electron gas.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0268-1242	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1215
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	Author	Maslennikov, S. N.; Finkel, M. I.; Antipov, S. V.; Polyakov, S. L.; Zhang, W.; Ozhegov, R.; Vachtomin, Yu. B.; Svechnikov, S. I.; Smirnov, K. V.; Korotetskaya, Yu. P.; Kaurova, N. S.; Gol'tsman, G. N.; Voronov, B. M.
	Title	Spiral antenna coupled and directly coupled NbN HEB mixers in the frequency range from 1 to 70 THz			Type	Conference Article
	Year	2006	Publication	Proc. 17^th Int. Symp. Space Terahertz Technol.	Abbreviated Journal	Proc. 17^th Int. Symp. Space Terahertz Technol.
	Volume		Issue		Pages	177-179
	Keywords	directly coupled NbN HEB mixers
	Abstract	We investigate both antenna coupled and directly coupled HEB mixers at several LO frequencies within the range of 2.5 THz to 70 THz. H20 (2.5+10.7 THz), and CO2 (30 THz) gas discharge lasers are used as the local oscillators. The noise temperature of antenna coupled mixers is measured at LO frequencies of 2.5 THz, 3.8 THz, and 30 THz. The results for both antenna coupled and directly coupled mixer types are compared. The devices with in—plane dimensions of 5x5 ,um 2 are pumped by LO radiation at 10.7 THz. The directly coupled HEB demonstrates nearly flat dependence of responsivity on frequency in the range of 25+64 THz.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication	Paris, France	Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	386
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	Author	Semenov, A. V.; Devyatov, I. A.; Korneev, A. A.; Smirnov, K. V.; Goltsman, G. N.; Melnikov, A. P.
	Title	Derivation of expression for thermodynamic potential of “dirty” superconductor			Type	Journal Article
	Year	2012	Publication	Rus. J. Radio Electron.	Abbreviated Journal	Rus. J. Radio Electron.
	Volume		Issue	4	Pages
	Keywords	dirty superconductor, Usadel theory, thermodynamic potential
	Abstract	We derive a formula for thermodynamic potential of dirty superconductor which express it via isotropic quasiclassical Green functions of Usadel theory. Our result allows unify description of dynamic processes and fluctuations in superconducting nano-electronic devices.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language	Russian	Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN		ISBN		Medium
	Area		Expedition		Conference
	Notes	7 pages			Approved	no
	Call Number				Serial	1824
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	Author	Ozhegov, R. V.; Smirnov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V.; Divochiy, A. V.; Goltsman, G. N.
	Title	Ultrafast superconducting bolometer receivers for terahertz applications			Type	Abstract
	Year	2009	Publication	Proc. PIERS	Abbreviated Journal	Proc. PIERS
	Volume		Issue		Pages	867
	Keywords	HEB
	Abstract	The research by the group of Moscow State Pedagogical University into the hot-electron phenomena in thin superconducting films has led to the development of new types of detectors and their use both in fundamental and applied studies. In this paper, we present the results of testing the terahertz HEB receiver systems based on ultrathin (∼ 4 nm) NbN and MoRe detectors with a response time of 50 ps and 1 ns, respectively. We have developed three types of devices which differ in the way a terahertz signal is coupled to the detector and cover the following ranges: 0.3–3 THz, 0.1–30 THz and 25–70 THz. In the case of the receiving system optimized for 0.3–3 THz, the sensitive element (a strip of asuperconductor with planar dimensions of 0.2μm (length) by 1.7μm (width)) was integrated witha planar broadband log-spiral antenna. For additional focusing ofthe incident radiation a silicon hyperhemispherical lens was used. For the 0.1–30 THz receivingsystem, the sensitive element was patterned as parallel strips(2μm wide each) filling an area of 500×500μm2with a filling factor of 0.5. In the receivingsystem of this type we used direct coupling of the incident radiation to the sensitive element. Inthe 25–70 THz range (detector type 2/2a in Table 1) we used a square-shaped superconductingdetector with planar dimensions of 10×10μm2. Incident radiation was coupled to the detectorwith the use of a germanium hyperhemispherical lens.The response time of the above receiving systems is determined by the cooling rate of the hotelectrons in the film. That depends on the electron-phonon interaction time, which is less forultrathin NbN than in MoRe.
	Address	Moscow, Russia
	Corporate Author				Thesis
	Publisher	The Electromagnetics Academy	Place of Publication	777 Concord Avenue, Suite 207 Cambridge, MA 02138	Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	1559-9450	ISBN	978-1-934142-09-7	Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number	RPLAB @ sasha @ ozhegovultrafast			Serial	1022
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	Author	Kitaeva, G. K.; Kornienko, V. V.; Kuznetsov, K. A.; Pentin, I. V.; Smirnov, K. V.; Vakhtomin, Y. B.
	Title	Direct detection of the idler THz radiation generated by spontaneous parametric down-conversion			Type	Journal Article
	Year	2019	Publication	Opt. Lett.	Abbreviated Journal	Opt. Lett.
	Volume	44	Issue	5	Pages	1198-1201
	Keywords	HEB applications
	Abstract	We study parametric down-conversion (PDC) of optical laser radiation in the strongly frequency non-degenerate regime which is promising for the generation of quantum-correlated pairs of extremely different spectral ranges, the optical and the terahertz (THz) ones. The possibility to detect tenuous THz-frequency photon fluxes generated under low-gain spontaneous PDC is demonstrated using a hot electron bolometer. Then experimental dependences of the THz radiation power on the detection angle and on the pump intensity are analyzed.
	Address
	Corporate Author				Thesis
	Publisher		Place of Publication		Editor
	Language		Summary Language		Original Title
	Series Editor		Series Title		Abbreviated Series Title
	Series Volume		Series Issue		Edition
	ISSN	0146-9592	ISBN		Medium
	Area		Expedition		Conference
	Notes	PMID:30821747			Approved	no
	Call Number				Serial	1801
Permanent link to this record