| Home | << 1 2 3 4 5 6 7 8 9 >> |
|
| Records | |||||
|---|---|---|---|---|---|
| Author | Titova, N.; Gayduchenko, I. A.; Moskotin, M. V.; Fedorov, G. F.; Goltsman, G. N. | ||||
| Title | Carbon nanotube based terahertz radiation detectors | Type | Conference Article | ||
| Year | 2019 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1410 | Issue | Pages | 012208 (1 to 5) | |
Keywords  |
carbon nanotubes, CNT | ||||
| Abstract | In this paper, we study terahertz detectors based on single quasimetallic carbon nanotubes (CNT) with asymmetric contacts and different metal pairs. We demonstrate that, depending on the contact metallization of the device, various detection mechanisms are manifested. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1270 | |||
| Permanent link to this record | |||||
| Author | Gayduchenko, I. A.; Fedorov, G. E.; Stepanova, T. S.; Titova, N.; Voronov, B. M.; But, D.; Coquillat, D.; Diakonova, N.; Knap, W.; Goltsman, G. N. | ||||
| Title | Asymmetric devices based on carbon nanotubes as detectors of sub-THz radiation | Type | Conference Article | ||
| Year | 2016 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 741 | Issue | Pages | 012143 (1 to 6) | |
| Keywords |
carbon nanotubes, CNT | ||||
| Abstract | Demand for efficient terahertz (THz) radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. In this work, we systematically investigate the response of asymmetric carbon nanodevices to sub-terahertz radiation using different sensing elements: from dense carbon nanotube (CNT) network to individual CNT. We conclude that the detectors based on individual CNTs both semiconducting and quasi-metallic demonstrate much stronger response in sub-THz region than detectors based on disordered CNT networks at room temperature. We also demonstrate the possibility of using asymmetric detectors based on CNT for imaging in the THz range at room temperature. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1336 | |||
| Permanent link to this record | |||||
| Author | Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Voronov, B. M.; Finkel, M.; Klapwijk, T. M.; Goltsman, G. | ||||
| Title | Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-THz radiation | Type | Abstract | ||
| Year | 2014 | Publication | Proc. 25th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 25th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 71 | ||
| Keywords |
carbon nanotubes, CNT | ||||
| Abstract | This work reports on the voltage response of asymmetric carbon nanotube devices to sub-THz radiation at the frequency of 140 GHz. The devices contain CNT’s, which are over their length partially suspended and partially Van der Waals bonded to a SiO 2 substrate, causing a difference in thermal contact. Different heat sinking of CNTs by source and drain gives rise to temperature gradient and consequent thermoelectric power (TEP) as such a device is exposed to the sub-THz radiation. Sign of the DC signal, its power and gate voltage dependence observed at room temperature are consistent with this scenario. At liquid helium temperature the observed response is more complex. DC voltage signal of an opposite sign is observed in a narrow range of gate voltages at low temperatures and under low radiation power. We argue that this may indicate a true photovoltaic response from small gap (less than 10meV) CNT’s, an effect never reported before. While it is not clear if the observed effects can be used to develop efficient THz detectors we note that the responsivity of our devices exceeds that of CNT based devices in microwave or THz range reported before at room temperature. Besides at 4.2 K notable increase of the sample conductance (at least four-fold) is observed. Our recent results with asymmetric carbon nanotube devices response to THz radiation (2.5 THz) will also be presented. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1361 | |||
| Permanent link to this record | |||||
| Author | Fedorov, G. E.; Stepanova, T. S.; Gazaliev, A. S.; Gaiduchenko, I. A.; Kaurova, N. S.; Voronov, B. M.; Goltzman, G. N. | ||||
| Title | Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection | Type | Journal Article | ||
| Year | 2016 | Publication | Semicond. | Abbreviated Journal | Semicond. |
| Volume | 50 | Issue | 12 | Pages | 1600-1603 |
| Keywords |
carbon nanotubes, CNT detectors | ||||
| Abstract | Various asymmetric detecting devices based on carbon nanotubes (CNTs) are studied. The asymmetry is understood as inhomogeneous properties along the conducting channel. In the first type of devices, an inhomogeneous morphology of the CNT grid is used. In the second type of devices, metals with highly varying work functions are used as the contact material. The relation between the sensitivity and detector configuration is analyzed. Based on the data obtained, approaches to the development of an efficient detector of terahertz radiation, based on carbon nanotubes are proposed. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1063-7826 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1776 | |||
| Permanent link to this record | |||||
| Author | Akhmadishina, K. F.; Bobrinetskiy, I. I.; Komarov, I. A.; Malovichko, A. M.; Nevolin, V. K.; Fedorov, G. E.; Golovin, A. V.; Zalevskiy, A. O.; Aidarkhanov, R. D. | ||||
| Title | Fast-response biological sensors based on single-layer carbon nanotubes modified with specific aptamers | Type | Journal Article | ||
| Year | 2015 | Publication | Semicond. | Abbreviated Journal | Semicond. |
| Volume | 49 | Issue | 13 | Pages | 1749-1753 |
| Keywords |
carbon nanotubes, CNT detectors | ||||
| Abstract | The possibility of the fabrication of a fast-response biological sensor based on a composite of single-layer carbon nanotubes and aptamers for the specific detection of proteins is shown. The effect of modification of the surface of the carbon nanotubes on the selectivity and sensitivity of the sensors is investigated. It is shown that carboxylated nanotubes have a better selectivity for detecting thrombin. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1063-7826 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1783 | |||
| Permanent link to this record | |||||
| Author | Dube, I.; Jiménez, D.; Fedorov, G.; Boyd, A.; Gayduchenko, I.; Paranjape, M.; Barbara, P. | ||||
| Title | Understanding the electrical response and sensing mechanism of carbon-nanotube-based gas sensors | Type | Journal Article | ||
| Year | 2015 | Publication | Carbon | Abbreviated Journal | Carbon |
| Volume | 87 | Issue | Pages | 330-337 | |
| Keywords |
carbon nanotubes, CNT detectors, field effect transistors, FET | ||||
| Abstract | Gas sensors based on carbon nanotube field effect transistors (CNFETs) have outstanding sensitivity compared to existing technologies. However, the lack of understanding of the sensing mechanism has greatly hindered progress on calibration standards and customization of these nano-sensors. Calibration requires identifying fundamental transistor parameters and establishing how they vary in the presence of a gas. This work focuses on modeling the electrical response of CNTFETs in the presence of oxidizing (NO2) and reducing (NH3) gases and determining how the transistor characteristics are affected by gas-induced changes of contact properties, such as the Schottky barrier height and width, and by the doping level of the nanotube. From the theoretical fits of the experimental transfer characteristics at different concentrations of NO2 and NH3, we find that the CNTFET response can be modeled by introducing changes in the Schottky barrier height. These changes are directly related to the changes in the metal work function of the electrodes that we determine experimentally, independently, with a Kelvin probe. Our analysis yields a direct correlation between the ON – current and the changes in the electrode metal work function. Doping due to molecules adsorbed at the carbon-nanotube/metal interface also affects the transfer characteristics. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0008-6223 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1778 | |||
| Permanent link to this record | |||||
| Author | Ryzhii, V.; Otsuji, T.; Ryzhii, M.; Leiman, V. G.; Fedorov, G.; Goltzman, G. N.; Gayduchenko, I. A.; Titova, N.; Coquillat, D.; But, D.; Knap, W.; Mitin, V.; Shur, M. S. | ||||
| Title | Two-dimensional plasmons in lateral carbon nanotube network structures and their effect on the terahertz radiation detection | Type | Journal Article | ||
| Year | 2016 | Publication | J. Appl. Phys. | Abbreviated Journal | J. Appl. Phys. |
| Volume | 120 | Issue | 4 | Pages | 044501 (1 to 13) |
| Keywords |
carbon nanotubes, CNT detectors, plasmons | ||||
| Abstract | We consider the carrier transport and plasmonic phenomena in the lateral carbon nanotube (CNT) networks forming the device channel with asymmetric electrodes. One electrode is the Ohmic contact to the CNT network and the other contact is the Schottky contact. These structures can serve as detectors of the terahertz (THz) radiation. We develop the device model for collective response of the lateral CNT networks which comprise a mixture of randomly oriented semiconductor CNTs (s-CNTs) and quasi-metal CNTs (m-CNTs). The proposed model includes the concept of the collective two-dimensional (2D) plasmons in relatively dense networks of randomly oriented CNTs (CNT “felt”) and predicts the detector responsivity spectral characteristics exhibiting sharp resonant peaks at the signal frequencies corresponding to the 2D plasmonic resonances. The detection mechanism is the rectification of the ac current due the nonlinearity of the Schottky contact current-voltage characteristics under the conditions of a strong enhancement of the potential drop at this contact associated with the plasmon excitation. The detector responsivity depends on the fractions of the s- and m-CNTs. The burning of the near-contact regions of the m-CNTs or destruction of these CNTs leads to a marked increase in the responsivity in agreement with our experimental data. The resonant THz detectors with sufficiently dense lateral CNT networks can compete and surpass other THz detectors using plasmonic effects at room temperatures. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1777 | |||
| Permanent link to this record | |||||
| Author | Eletskii, A. V.; Sarychev, A. K.; Boginskaya, I. A.; Bocharov, G. S.; Gaiduchenko, I. A.; Egin, M. S.; Ivanov, A. V.; Kurochkin, I. N.; Ryzhikov, I. A.; Fedorov, G. E. | ||||
| Title | Amplification of a Raman scattering signal by carbon nanotubes | Type | Journal Article | ||
| Year | 2018 | Publication | Dokl. Phys. | Abbreviated Journal | Dokl. Phys. |
| Volume | 63 | Issue | 12 | Pages | 496-498 |
| Keywords |
carbon nanotubes, CNT, Raman scattering, RLS | ||||
| Abstract | The effect of Raman scattering (RLS) signal amplification by carbon nanotubes (CNTs) was studied. Single-layered nanotubes were synthesized by the chemical vapor deposition (CVD) method using methane as a carbon-containing gas. The object of study used was water, the Raman spectrum of which is rather well known. Amplification of the Raman scattering signal by several hundred percent was attained in our work. The maximum amplification of a Raman scattering signal was shown to be achieved at an optimal density of nanotubes on a substrate. This effect was due to the scattering and screening of plasmons excited in CNTs by neighboring nanotubes. The amplification mechanism and the possibilities of optimization for this effect were discussed on the basis of the theory of plasmon resonance in carbon nanotubes. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1028-3358 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1775 | |||
| Permanent link to this record | |||||
| Author | Matyushkin, Y.; Kaurova, N.; Voronov, B.; Goltsman, G.; Fedorov, G. | ||||
| Title | On chip carbon nanotube tunneling spectroscopy | Type | Journal Article | ||
| Year | 2020 | Publication | Fullerenes, Nanotubes and Carbon Nanostructures | Abbreviated Journal | |
| Volume | 28 | Issue | 1 | Pages | 50-53 |
| Keywords |
carbon nanotubes, CNT, scanning tunneling microscope, STM | ||||
| Abstract | We report an experimental study of the band structure of individual carbon nanotubes (SCNTs) based on investigation of the tunneling density of states, i.e. tunneling spectroscopy. A common approach to this task is to use a scanning tunneling microscope (STM). However, this approach has a number of drawbacks, to overcome which, we propose another method – tunneling spectroscopy of SCNTs on a chip using a tunneling contact. This method is simpler, cheaper and technologically advanced than the STM. Fabrication of a tunnel contact can be easily integrated into any technological route, therefore, a tunnel contact can be used, for example, as an additional tool in characterizing any devices based on individual CNTs. In this paper we demonstrate a simple technological procedure that results in fabrication of good-quality tunneling contacts to carbon nanotubes. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Taylor & Francis | Place of Publication | Editor | ||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | doi:10.1080/1536383X.2019.1671365 | Serial | 1269 | ||
| Permanent link to this record | |||||
| Author | Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Charayev, I.; Voronov, B.M.; Finkel, M.; Klapwijk, T.M.; Morozov, S.; Presniakov, M.; Bobrinetskiy, I.; Ibragimov, R.; Goltsman, G. | ||||
| Title | Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation | Type | Journal Article | ||
| Year | 2013 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 103 | Issue | 18 | Pages | 181121 (1 to 5) |
| Keywords |
carbon nanotubes, CNT, THz radiation, SiO2 substrate | ||||
| Abstract | We report on the voltage response of carbon nanotube devices to sub-terahertz (THz) radiation. The devices contain carbon nanotubes (CNTs), which are over their length partially suspended and partially Van der Waals bonded to a SiO2 substrate, causing a difference in thermal contact. We observe a DC voltage upon exposure to 140 GHz radiation. Based on the observed gate voltage and power dependence, at different temperatures, we argue that the observed signal is both thermal and photovoltaic. The room temperature responsivity in the microwave to THz range exceeds that of CNT based devices reported before. Authors thank Professor P. Barbara for providing the catalyst for CNT growth and Dr. N. Chumakov and V. Rylkov for stimulating discussions. The work was supported by the RFBR (Grant No. 12-02-01291-a) and by the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007). G.F. acknowledges support of the RFBR grant 12-02-01005-a. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1171 | |||
| Permanent link to this record | |||||
| Author | Yang, Y.; Fedorov, G.; Shafranjuk, S. E.; Klapwijk, T. M.; Cooper, B. K.; Lewis, R. M.; Lobb, C. J.; Barbara, P. | ||||
| Title | Electronic transport and possible superconductivity at Van Hove singularities in carbon nanotubes | Type | Journal Article | ||
| Year | 2015 | Publication | Nano Lett. | Abbreviated Journal | Nano Lett. |
| Volume | 15 | Issue | 12 | Pages | 7859-7866 |
| Keywords |
carbon nanotubes, CNT, tunable superconductivity, van Hove singularities | ||||
| Abstract | Van Hove singularities (VHSs) are a hallmark of reduced dimensionality, leading to a divergent density of states in one and two dimensions and predictions of new electronic properties when the Fermi energy is close to these divergences. In carbon nanotubes, VHSs mark the onset of new subbands. They are elusive in standard electronic transport characterization measurements because they do not typically appear as notable features and therefore their effect on the nanotube conductance is largely unexplored. Here we report conductance measurements of carbon nanotubes where VHSs are clearly revealed by interference patterns of the electronic wave functions, showing both a sharp increase of quantum capacitance, and a sharp reduction of energy level spacing, consistent with an upsurge of density of states. At VHSs, we also measure an anomalous increase of conductance below a temperature of about 30 K. We argue that this transport feature is consistent with the formation of Cooper pairs in the nanotube. | ||||
| Address | Department of Physics, Georgetown University , Washington, District of Columbia 20057, United States | ||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1530-6984 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:26506109; Suuplementary info (attached to pdf) DOI: 10.1021/acs.nanolett.5b02564 | Approved | no | ||
| Call Number | Serial | 1782 | |||
| Permanent link to this record | |||||
| Author | Pyatkov, F.; Khasminskaya, S.; Kovalyuk, V.; Hennrich, F.; Kappes, M. M.; Goltsman, G. N.; Pernice, W. H. P.; Krupke, R. | ||||
| Title | Sub-nanosecond light-pulse generation with waveguide-coupled carbon nanotube transducers | Type | Journal Article | ||
| Year | 2017 | Publication | Beilstein J. Nanotechnol. | Abbreviated Journal | Beilstein J. Nanotechnol. |
| Volume | 8 | Issue | Pages | 38-44 | |
| Keywords |
carbon nanotubes; CNT; infrared; integrated optics devices; nanomaterials | ||||
| Abstract | Carbon nanotubes (CNTs) have recently been integrated into optical waveguides and operated as electrically-driven light emitters under constant electrical bias. Such devices are of interest for the conversion of fast electrical signals into optical ones within a nanophotonic circuit. Here, we demonstrate that waveguide-integrated single-walled CNTs are promising high-speed transducers for light-pulse generation in the gigahertz range. Using a scalable fabrication approach we realize hybrid CNT-based nanophotonic devices, which generate optical pulse trains in the range from 200 kHz to 2 GHz with decay times below 80 ps. Our results illustrate the potential of CNTs for hybrid optoelectronic systems and nanoscale on-chip light sources. | ||||
| Address | Department of Materials and Earth Sciences, Technische Universitat Darmstadt, Darmstadt 64287, Germany | ||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 2190-4286 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:28144563; PMCID:PMC5238692 | Approved | no | ||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1109 | ||
| Permanent link to this record | |||||
| Author | Lang, P. T.; Leipold, I.; Knott, W. J.; Semenov, A. D.; Gol'tsman, G. N.; Renk, K. F. | ||||
| Title | New far-infrared laser lines from CH3Cl and CH3Br optically pumped with a continuously tunable high pressure CO2 laser | Type | Journal Article | ||
| Year | 1991 | Publication | Appl. Phys. B | Abbreviated Journal | Appl. Phys. B |
| Volume | 53 | Issue | 4 | Pages | 207-212 |
| Keywords |
CO2 IR lasers, applications, CH3Cl, CH3Br | ||||
| Abstract | In this paper we report on the detection of new far-infrared laser lines from CH3Cl and CH3Br optically pumped with a continuously tunable high pressure CO2 laser. We found 80 new lines for CH3Cl and 9 new lines for CH3Br in the frequency region between 16 cm−1 and 41 cm−1, all due to stimulated Raman scattering. For the Raman gain regions bandwidths up to about 700 MHz were found. We also observed high intensity short far-infrared laser pulses of durations in the nanosecond regime. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0721-7269 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1678 | |||
| Permanent link to this record | |||||
| Author | Lang, P. T.; Knott, W. J.; Leipold, I.; Renk, K. F.; Semenov, A. D.; Gol'tsman, G. N. | ||||
| Title | Generation and detection of tunable ultrashort infrared and far-infrared radiation pulses of high intensity | Type | Journal Article | ||
| Year | 1992 | Publication | Int. J. of Infrared and Millimeter Waves | Abbreviated Journal | Int. J. of Infrared and Millimeter Waves |
| Volume | 13 | Issue | 3 | Pages | 373-380 |
| Keywords |
CO2 IR lasers, FIR | ||||
| Abstract | We report on generation and detection of intense pulsed radiation with frequency tunability in the infrared and far-infrared spectral regions. Infrared radiation is generated with a transversally electrically excited high pressure CO2 laser. A laser pulse of a total duration of about 300 ns consisted, due to self mode locking, of a series of single pulses, some with pulse durations of less than 450 ps and peak powers larger than 20 MW. Using these pulses for optical with durations less than 400 ps were obtained. For detection a new ultrafast superconducting detector was used. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0195-9271 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1671 | |||
| Permanent link to this record | |||||
| Author | Zubkova, E.; Golikov, A.; An, P.; Kovalyuk, V.; Korneev, A.; Ferrari, S.; Pernice, W.; Goltsman, G. | ||||
| Title | CWDM demultiplexer using anti-reflection, contra-directional couplers based on silicon nitride rib waveguide | Type | Conference Article | ||
| Year | 2019 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1410 | Issue | Pages | 012179 | |
| Keywords |
coarse wavelength-division multiplexing, Si3N4 rib waveguide | ||||
| Abstract | We report on the development and fabrication of a 9-channel coarse wavelength-division multiplexing for telecommunication wavelengths (1550 nm) using anti-reflection contra-directional couplers, based on silicon nitride (Si3N4) rib waveguide. The transmitted and reflected spectrum in each channel of the demultiplexer were measured. The average full width at half maximum of the transmitted (reflected) spectra is about 3 nm. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1183 | |||
| Permanent link to this record | |||||
| Author | Гершензон, Е. М.; Литвак-Горская, Л. Б.; Рабинович, Р. И. | ||||
| Title | Отрицательное магнитосопротивление в случае проводимости по верхней зоне Хаббарда | Type | Journal Article | ||
| Year | 1983 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 17 | Issue | 10 | Pages | 1873-1876 |
| Keywords |
compensated n-InSb, Hubbard upper zone conductivity, negative magnetoresistance | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1763 | |||
| Permanent link to this record | |||||
| Author | Гальперин, Ю. М.; Гершензон, Е. М.; Дричко, И. Л.; Литвак-Горская, Л. Б. | ||||
| Title | Кинетические явления в компенсированном n-InSb при низких температурах | Type | Journal Article | ||
| Year | 1990 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 24 | Issue | 1 | Pages | 3-24 |
| Keywords |
compensated n-InSb, impurities | ||||
| Abstract | Представлен обзор результатов цикла исследований природы электропроводности предельно очищенных образцов антимонида индия n-типа. Рассмотрены способы определения концентрации доноров и степени компенсации в этом материале, обсуждается роль свободных и локализованных на донорах электронов в электропроводности при гелиевых температурах. Обсуждение основано на анализе результатов исследования гальваномагнитных явлений, поглощения СВЧ излучения миллиметрового и субмиллиметрового диапазонов и ультразвука. Рассмотрены способы определения характеристик материала на основе комплекса результатов, полученных с помощью указанных методов. Обсуждается также фотопроводимость по примесям в n-InSb. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Russian | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1756 | |||
| Permanent link to this record | |||||
| Author | Tikhonov, V. V.; Boyarskii, D. A.; Polyakova, O. N.; Dzardanov, A. L.; Goltsman, G. N. | ||||
| Title | Radiophysical and dielectric properties of ore minerals in 12--145 GHz frequency range | Type | Journal Article | ||
| Year | 2010 | Publication | PIER B | Abbreviated Journal | PIER B |
| Volume | 25 | Issue | Pages | 349-367 | |
| Keywords |
complex permittivity, ore minerals | ||||
| Abstract | The paper discusses a retrieval technique of complex permittivity of ore minerals in frequency ranges of 12--38 GHz and 77--145 GHz. The method is based on measuring frequency dependencies of transmissivity and reflectivity of plate-parallel mineral samples. In the 12--38 GHz range, the measurements were conducted using a panoramic standing wave ratio and attenuation meter. In the 77--145 GHz range, frequency dependencies of transmissivity and reflectivity were obtained using millimeter-band spectrometer with backward-wave oscillators. The real and imaginary parts of complex permittivity of a mineral were determined solving an equation system for frequency dependencies of transmissivity and reflectivity of an absorbing layer located between two dielectric media. In the course of the work, minerals that are primary ores in iron, zinc, copper and titanium mining were investigated: magnetite, hematite, sphalerite, chalcopyrite, pyrite, and ilmenite. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | RPLAB @ gujma @ | Serial | 639 | ||
| Permanent link to this record | |||||
| Author | Gayduchenko, I.; Fedorov, G.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. | ||||
| Title | Towards to the development of THz detectors based on carbon nanostructures | Type | Conference Article | ||
| Year | 2018 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1092 | Issue | Pages | 012039 (1 to 4) | |
| Keywords |
CVD graphene, carbon nanotubes, CNT, field effect transistors, FET, THz detectors | ||||
| Abstract | Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of detectors with sensor elements based on CVD graphene as well as its derivatives – carbon nanotubes (CNTs). The devices are made in configuration of field effect transistors (FET) with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes. We show that at 300K semiconducting CNTs show better performance up to 300GHz with responsivity up to 100V/W, while quasi-metallic CNTs are shown to operate up to 2.5THz. At 300 K graphene detector exhibit the room-temperature responsivity from R = 15 V/W at f = 129 GHz to R = 3 V/W at f = 450 GHz. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1302 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, Ye. M.; Goltsman, G. N.; Yelantyev, A. I.; Petrova, Ye. B.; Ptitsina, N. G.; Filatov, V. S. | ||||
| Title | Lecture demonstrations of properties of superconductors and liquid helium | Type | Journal Article | ||
| Year | 1987 | Publication | USSR Rept Phys. Math. JPRS UPM | Abbreviated Journal | USSR Rept Phys. Math. JPRS UPM |
| Volume | 24 | Issue | 7 | Pages | 51 |
| Keywords |
demonstrations, lections | ||||
| Abstract | New demonstrations for low temperature physics courses are described. Two transparent Dewar vacuum flasks fitting one inside the other with the external flask for nitrogen and the internal flask for helium are used. The helium temperature can be regulated in the 4.2 to 1.6 K range and the effects of reducing helium to the superfluid state at 2.17 K can be shown: boiling abruptly stops and superfluid flow appears. In order to show the electric and magnetic characteristics of superconductivity, a superconducting NbTi solenoid containing nonsuperconducting wire and germanium and superconducting Nb materials with different critical temperatures is placed in the helium refrigerant vessel. The fall of the resistance at the critical temperatures can be shown. In order to show magnetic field and superconductive current flow properties a shunt of superconductive material is connected in parallel to the coil and is enclosed in a teflon container with a heater which can vary its temperature. When it is heated and not superconductive, magnetic field effects can be demonstrated and when it is unheated and superconducting a continuous current can be demonstrated. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1704 | |||
| Permanent link to this record | |||||
| Author | Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. | ||||
| Title | Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector | Type | Journal Article | ||
| Year | 2020 | Publication | Nanomaterials (Basel) | Abbreviated Journal | Nanomaterials (Basel) |
| Volume | 10 | Issue | 5 | Pages | 1-12 |
| Keywords |
detector; quantum dots; short-wave infrared range; silicon | ||||
| Abstract | In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology. | ||||
| Address | Laboratory of nonlinear optics, Zavoisky Physical-Technical Institute of the Russian Academy of Sciences, Kazan 420029, Russia | ||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | English | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 2079-4991 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:32365694; PMCID:PMC7712218 | Approved | no | ||
| Call Number | Serial | 1151 | |||
| Permanent link to this record | |||||
| Author | Maslennikov, S. N.; Finkel, M. I.; Antipov, S. V.; Polyakov, S. L.; Zhang, W.; Ozhegov, R.; Vachtomin, Yu. B.; Svechnikov, S. I.; Smirnov, K. V.; Korotetskaya, Yu. P.; Kaurova, N. S.; Gol'tsman, G. N.; Voronov, B. M. | ||||
| Title | Spiral antenna coupled and directly coupled NbN HEB mixers in the frequency range from 1 to 70 THz | Type | Conference Article | ||
| Year | 2006 | Publication | Proc. 17th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 17th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 177-179 | ||
| Keywords |
directly coupled NbN HEB mixers | ||||
| Abstract | We investigate both antenna coupled and directly coupled HEB mixers at several LO frequencies within the range of 2.5 THz to 70 THz. H20 (2.5+10.7 THz), and CO2 (30 THz) gas discharge lasers are used as the local oscillators. The noise temperature of antenna coupled mixers is measured at LO frequencies of 2.5 THz, 3.8 THz, and 30 THz. The results for both antenna coupled and directly coupled mixer types are compared. The devices with in—plane dimensions of 5x5 ,um 2 are pumped by LO radiation at 10.7 THz. The directly coupled HEB demonstrates nearly flat dependence of responsivity on frequency in the range of 25+64 THz. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Paris, France | Editor | ||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 386 | |||
| Permanent link to this record | |||||
| Author | Семенов, А. В.; Корнеев, А. А.; Смирнов, А. В.; Смирнов, К. В.; Ожегов, Р. В.; Окунев, О. В.; Гольцман, Г. Н.; Девятов, И. А. | ||||
| Title | Линейные по мощности поглощаемого излучения поправки к спектральным функциям «грязного» сверхпроводника и отклик сверхпроводниковых детекторов | Type | Journal Article | ||
| Year | 2012 | Publication | Преподаватель ХХI век | Abbreviated Journal | |
| Volume | Issue | 3 | Pages | 216-220 | |
| Keywords |
dirty superconductor film | ||||
| Abstract | В статье развит метод расчета малых поправок к спектральным функциям пленки «грязного» сверхпроводника, возникающих под действием поглощаемой мощности электромагнитного излучения. Метод пригоден в случае спектральных функций произвольного вида, что позволяет применять его для расчета отклика сверхпроводниковых детекторов излучения различного типа. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Russian | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1822 | |||
| Permanent link to this record | |||||
| Author | Semenov, A. V.; Devyatov, I. A.; Korneev, A. A.; Smirnov, K. V.; Goltsman, G. N.; Melnikov, A. P. | ||||
| Title | Derivation of expression for thermodynamic potential of “dirty” superconductor | Type | Journal Article | ||
| Year | 2012 | Publication | Rus. J. Radio Electron. | Abbreviated Journal | Rus. J. Radio Electron. |
| Volume | Issue | 4 | Pages | ||
| Keywords |
dirty superconductor, Usadel theory, thermodynamic potential | ||||
| Abstract | We derive a formula for thermodynamic potential of dirty superconductor which express it via isotropic quasiclassical Green functions of Usadel theory. Our result allows unify description of dynamic processes and fluctuations in superconducting nano-electronic devices. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Russian | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | 7 pages | Approved | no | ||
| Call Number | Serial | 1824 | |||
| Permanent link to this record | |||||
| Author | Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M. | ||||
| Title | Electron–phonon interaction in disordered conductors | Type | Journal Article | ||
| Year | 1999 | Publication | Phys. Rev. B Condens. Matter | Abbreviated Journal | Phys. Rev. B Condens. Matter |
| Volume | 263-264 | Issue | Pages | 190-192 | |
| Keywords |
disordered conductors, electron-phonon interaction | ||||
| Abstract | The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0921-4526 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1765 | |||
| Permanent link to this record | |||||
| Author | Sergeev, A.; Mitin, V. | ||||
| Title | Electron-phonon interaction in disordered conductors: Static and vibrating scattering potentials | Type | Journal Article | ||
| Year | 2000 | Publication | Phys. Rev. B. | Abbreviated Journal | Phys. Rev. B. |
| Volume | 61 | Issue | 9 | Pages | 6041-6047 |
| Keywords |
disordered conductors, scattering potential, electron-phonon interaction | ||||
| Abstract | Employing the Keldysh diagram technique, we calculate the electron-phonon energy relaxation rate in a conductor with the vibrating and static δ-correlated random electron-scattering potentials. If the scattering potential is completely dragged by phonons, this model yields the Schmid’s result for the inelastic electron-scattering rate τ−1e−ph. At low temperatures the effective interaction decreases due to disorder, and τ−1e−ph∝T4l (l is the electron mean-free path). In the presense of the static potential, quantum interference of numerous scattering processes drastically changes the effective electron-phonon interaction. In particular, at low temperatures the interaction increases, and τ−1e−ph∝T2/l. Along with an enhancement of the interaction, which is observed in disordered metallic films and semiconducting structures at low temperatures, the suggested model allows us to explain the strong sensitivity of the electron relaxation rate to the microscopic quality of a particular film. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0163-1829 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 307 | |||
| Permanent link to this record | |||||
| Author | Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E. | ||||
| Title | Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate | Type | Journal Article | ||
| Year | 1997 | Publication | Phys. Rev. B | Abbreviated Journal | Phys. Rev. B |
| Volume | 56 | Issue | 16 | Pages | 10089-10096 |
| Keywords |
disordered metal films, electron-phonon interaction, electron dephasing rate, resistivity | ||||
| Abstract | The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path l=1.5–10nm has been measured at 4.2–300 K. The resistance of all the films contains a T2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference (M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 (1987) [Sov. Phys. JETP 65, 1291 (1987)]), we obtain constants of interaction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electron-phonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0163-1829 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1766 | |||
| Permanent link to this record | |||||
| Author | Kardakova, A.; Finkel, M.; Morozov, D.; Kovalyuk, V.; An, P.; Dunscombe, C.; Tarkhov, M.; Mauskopf, P.; Klapwijk, T.M.; Goltsman, G. | ||||
| Title | The electron-phonon relaxation time in thin superconducting titanium nitride films | Type | Journal Article | ||
| Year | 2013 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 103 | Issue | 25 | Pages | 252602 (1 to 4) |
| Keywords |
disordered TiN films, electron-phonon relaxation time | ||||
| Abstract | We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T−3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors. The work was supported by the Ministry of Education and Science of the Russian Federation, Contract No. 14.B25.31.0007 and by the RFBR Grant No. 13-02-91159. |
||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 941 | ||
| Permanent link to this record | |||||
| Author | Elmanov, I.; Elmanova, A.; Komrakova, S.; Golikov, A.; Kaurova, N.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. | ||||
| Title | Method for determination of resists parameters for photonic – integrated circuits e-beam lithography on silicon nitride platform | Type | Conference Article | ||
| Year | 2019 | Publication | EPJ Web Conf. | Abbreviated Journal | EPJ Web Conf. |
| Volume | 220 | Issue | Pages | 03012 | |
| Keywords |
e-beam lithography, Si3N4 | ||||
| Abstract | In the work the thicknesses of the e-beam resists ZEP 520A and ma-N 2400 by using non-destructive method were measured, as well as recipe for the high ratio between the Si3N4 and the resists etching rate was determined. The work has a practical application for e-beam lithography of photonic-integrated circuits and nanophotonics devices based on silicon nitride platform. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 2100-014X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1189 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E.M.; Gol'tsman, G.N.; Dzardanov, A.L.; Kuznetsov, E.A. | ||||
| Title | Superconducting UHF-limiter based on electron heating up | Type | Journal Article | ||
| Year | 1992 | Publication | Sverkhprovodimost': Fizika, Khimiya, Tekhnika | Abbreviated Journal | Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
| Volume | 5 | Issue | 11 | Pages | 2164-2170 |
| Keywords |
electron heating, applications | ||||
| Abstract | The results of experimental investigation of fast-action 5HF-limiter are presented; the limiter is based on the utilization of electron hetaing phenomenon in thin superconducting films. The design of SHF-limiter, which is intended for operation at liquid helium temperatures and which has the form of a section of superconducting NbN microstrip line for 1-12 GHz rang, is described. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Russian | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0235-8964 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1669 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E.; Goltsman, G.; Elantev, A.; Kagane, M. | ||||
| Title | Energy-spectrum of small donors and acceptors in germanium and effect of magnetic-field on it | Type | Conference Article | ||
| Year | 1978 | Publication | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya | Abbreviated Journal | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
| Volume | 42 | Issue | 6 | Pages | 1142-1148 |
| Keywords |
energy spectrum, Ge, magnetic field | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1722 | |||
| Permanent link to this record | |||||
| Author | Saveskul, N. A.; Titova, N. A.; Baeva, E. M.; Semenov, A. V.; Lubenchenko, A. V.; Saha, S.; Reddy, H.; Bogdanov, S. I.; Marinero, E. E.; Shalaev, V. M.; Boltasseva, A.; Khrapai, V. S.; Kardakova, A. I.; Goltsman, G. N. | ||||
| Title | Superconductivity behavior in epitaxial TiN films points to surface magnetic disorder | Type | Journal Article | ||
| Year | 2019 | Publication | Phys. Rev. Applied | Abbreviated Journal | Phys. Rev. Applied |
| Volume | 12 | Issue | 5 | Pages | 054001 |
| Keywords |
epitaxial TiN films | ||||
| Abstract | We analyze the evolution of the normal and superconducting properties of epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of the residual resistivity, that becomes dominated by diffusive surface scattering for d≤20nm. At the same time, a substantial thickness-dependent reduction of the superconducting critical temperature is observed compared to the bulk TiN value. In such high-quality material films, this effect can be explained by a weak magnetic disorder residing in the surface layer with a characteristic magnetic defect density of approximately 1012cm−2. Our results suggest that surface magnetic disorder is generally present in oxidized TiN films. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 2331-7019 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1166 | |||
| Permanent link to this record | |||||
| Author | Moskotin, M. V.; Gayduchenko, I. A.; Goltsman, G. N.; Titova, N.; Voronov, B. M.; Fedorov, G. F.; Pyatkov, F.; Hennrich, F. | ||||
| Title | Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes | Type | Conference Article | ||
| Year | 2018 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1124 | Issue | Pages | 051050 (1 to 5) | |
| Keywords |
field-effect transistor, FET, carbon nanotube, CNT | ||||
| Abstract | In this work we investigate the response on THz radiation of a FET device based on an individual carbon nanotube conductance channel. It was already shown, that the response of such devices can be either of diode rectification origin or of thermoelectric effect origin or of their combination. In this work we demonstrate that at 77K and 8K temperatures strong bolometric effect also makes a significant contribution to the response. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1301 | |||
| Permanent link to this record | |||||
| Author | Belosevich, V. V.; Gayduchenko, I. A.; Titova, N. A.; Zhukova, E. S.; Goltsman, G. N.; Fedorov, G. E.; Silaev, A. A. | ||||
| Title | Response of carbon nanotube film transistor to the THz radiation | Type | Conference Article | ||
| Year | 2018 | Publication | EPJ Web Conf. | Abbreviated Journal | EPJ Web Conf. |
| Volume | 195 | Issue | Pages | 05012 (1 to 2) | |
| Keywords |
field-effect transistor, FET, carbon nanotube, CNT | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 2100-014X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1317 | |||
| Permanent link to this record | |||||
| Author | Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D. | ||||
| Title | Graphene-layer and graphene-nanoribbon FETs as THz detectors | Type | Conference Article | ||
| Year | 2018 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1124 | Issue | Pages | 051054 | |
| Keywords |
field-effect transistor, FET, monolayer graphene, graphene nanoribbons | ||||
| Abstract | We report on detection of sub-THz radiation (129-430 GHz) using graphene based asymmetric field-effect transistor (FET) structures with different channel geometry: monolayer graphene, graphene nanoribbons. In all devices types we observed the similar trends of response on sub-THz radiation. The response fell with increasing frequency at room temperature, but increased with increasing frequency at 77 K. Our calculations show that the change in the trend of the frequency dependence at 77 K is associated with the appearance of plasma waves in the graphene channel. Unusual properties of p-n junctions in graphene are highlighted using devices of special geometry. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1300 | |||
| Permanent link to this record | |||||
| Author | Gayduchenko, I.; Xu, S. G.; Alymov, G.; Moskotin, M.; Tretyakov, I.; Taniguchi, T.; Watanabe, K.; Goltsman, G.; Geim, A. K.; Fedorov, G.; Svintsov, D.; Bandurin, D. A. | ||||
| Title | Tunnel field-effect transistors for sensitive terahertz detection | Type | Journal Article | ||
| Year | 2021 | Publication | Nat. Commun. | Abbreviated Journal | Nat. Commun. |
| Volume | 12 | Issue | 1 | Pages | 543 |
| Keywords |
field-effect transistors, bilayer graphene, BLG | ||||
| Abstract | The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG's electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/[Formula: see text]) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors' responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor. | ||||
| Address | Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA. bandurin@mit.edu | ||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | English | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 2041-1723 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:33483488; PMCID:PMC7822863 | Approved | no | ||
| Call Number | Serial | 1261 | |||
| Permanent link to this record | |||||
| Author | Kuzin, A.; Kovalyuk, V.; Golikov, A.; Prokhodtsov, A.; Marakhin, A.; Ferrari, S.; Pernice, W.; Gippius, N.; Goltsman, G. | ||||
| Title | Efficiency of focusing grating couplers versus taper length and angle | Type | Conference Article | ||
| Year | 2019 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1410 | Issue | Pages | 012181 | |
| Keywords |
focusing grating coupler | ||||
| Abstract | Here we experimentally studied dependence of a focusing grating coupler efficiency versus taper length and angle on silicon nitride platform. As a result, we obtained a dependence for the efficiency of a focusing grating coupler on the parameters of the taper length and angle. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1184 | |||
| Permanent link to this record | |||||
| Author | Loudkov, D.; Tong, C.-Y. E.; Marrone, D. P.; Ryabchun, S.; Paine, S. N.; Blundell, R. | ||||
| Title | Transmission measurements of infrared filters for low-noise terahertz receiver applications | Type | Conference Article | ||
| Year | 2005 | Publication | Proc. 16th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 16th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 354-357 | ||
| Keywords |
FTS, Zitex, alkali halide, crystalline quartz, Parylene, polyethylene, IR filters, transmission, THz applications | ||||
| Abstract | Infrared (IR) filters are very important to the efficient operation of cryogenic receivers. Usually, such filters are mounted on the radiation shield of the cryostat to reduce the heat load to the 4 K stage. Insufficient filtering may cause the temperature of the mixing element in a receiver to be excessively warm, leading to degradation in sensitivity. These filters should be effective in blocking the room temperature IR radiation from outside the cryostat, yet should be transparent across the desired signal frequency band. In the Terahertz frequency range, which is close to the infrared, it is difficult to find an inexpensive low- loss material that can provide the required IR blocking capacity. We present transmission measurements, made using a Fourier Transform Spectrometer (FTS), of a number of potential infrared filters between 0.4 and 1.6 THz. The filters tested include the widely-used, Teflon-based, Zitex-A and Zitex-G films, alkali halide based infrared filter, and crystalline quartz coated with Parylene, and polyethylene films. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1473 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. | ||||
| Title | Investigation of excited donor states in GaAs | Type | Journal Article | ||
| Year | 1974 | Publication | Sov. Phys. Semicond. | Abbreviated Journal | Sov. Phys. Semicond. |
| Volume | 7 | Issue | 10 | Pages | 1248-1250 |
| Keywords |
GaAs, excited donor states | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa | Place of Publication | Editor | ||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1733 | |||
| Permanent link to this record | |||||
| Author | Rasulova, G. K.; Pentin, I. V.; Goltsman, G. N. | ||||
| Title | Terahertz emission from a weakly-coupled GaAs/AlGaAs superlattice biased into three different modes of current self-oscillations | Type | Journal Article | ||
| Year | 2019 | Publication | AIP Advances | Abbreviated Journal | AIP Advances |
| Volume | 9 | Issue | 10 | Pages | 105220 |
| Keywords |
GaAs/AlGaAs superlattice, SL, NbN HEB | ||||
| Abstract | Radio-frequency modulated terahertz (THz) emission power from weakly-coupled GaAs/AlGaAs superlattice (SL) has been increased by parallel connection of several SL mesas. Each SL mesa is a self-oscillator with its own oscillation frequency and mode. In coupled non-identical SL mesas biased at different voltages within the hysteresis loop the chaotic, quasiperiodic and frequency-locked modes of self-oscillations of current arise. THz emission was detected when three connected in parallel SL mesas were biased into the frequency-locked and quasiperiodic modes of self-oscillations of current, while in the chaotic mode of those it falls to the noise level. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 2158-3226 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1274 | |||
| Permanent link to this record | |||||
| Author | Rasulova, G. K.; Brunkov, P. N.; Pentin, I. V.; Kovalyuk, V. V.; Gorshkov, K. N.; Kazakov, A. Y.; Ivanov, S. Y.; Egorov, A. Y.; Sakseev, D. A.; Konnikov, S. G. | ||||
| Title | Mutual synchronization of two coupled self-oscillators based on GaAs/AlGaAs superlattices | Type | Journal Article | ||
| Year | 2011 | Publication | Tech. Phys. | Abbreviated Journal | Tech. Phys. |
| Volume | 56 | Issue | 6 | Pages | 826-830 |
| Keywords |
GaAs/AlGaAs superlattices | ||||
| Abstract | The interaction of self-oscillators based on 30-period weakly coupled GaAs/AlGaAs superlattices is studied. The action of one self-oscillator on the other was observed for a constant bias voltage in the absence of generation of self-sustained oscillations in one of the oscillators. It is shown that induced oscillations in a forced oscillator appear due to excitation of oscillations in the system of coupled oscillators forming the electric-field domain wall at the frequency of one of the higher harmonics of a forcing oscillation. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1063-7842 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1214 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. | ||||
| Title | Germanium hot-electron narrow-band detector | Type | Journal Article | ||
| Year | 1971 | Publication | Sov. Radio Engineering And Electronic Physics | Abbreviated Journal | Sov. Radio Engineering And Electronic Physics |
| Volume | 16 | Issue | 8 | Pages | 1346 |
| Keywords |
Ge HEB detectors | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037 | Place of Publication | Editor | ||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1741 | |||
| Permanent link to this record | |||||
| Author | Goltsman, G. N.; Maliavkin, A. V.; Ptitsina, N. G.; Selevko, A. G. | ||||
| Title | Magnetic exciton spectroscopy in uniaxially compressed Ge at submillimeter waves | Type | Conference Article | ||
| Year | 1986 | Publication | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya | Abbreviated Journal | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
| Volume | 50 | Issue | Pages | 280-281 | |
| Keywords |
Ge, axial compression loads, excitons, germanium, magnetic spectroscopy, submillimeter waves, Zeeman effect | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Russian | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0367-6755 | ISBN | Medium | ||
| Area | Expedition | Conference | 3rd Vsesoiuznyi Seminar po Opticheskomu Detektirovaniiu Magnitnykh Rezonansov v Tverdykh Telakh, Kiev, Ukrainian SSR, May 1985 | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1708 | |||
| Permanent link to this record | |||||
| Author | Воеводин, Е. И.; Гершензон, Е. М.; Гольцман, Г. Н.; Птицина, Н. Г. | ||||
| Title | Энергетический спектр мелких акцепторов в сильно одноосно деформированном Ge | Type | Journal Article | ||
| Year | 1989 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 23 | Issue | 8 | Pages | 1356-1361 |
| Keywords |
Ge, crystallography | ||||
| Abstract | Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Russian | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Duplicated as 1692 | Approved | no | ||
| Call Number | Serial | 1691 | |||
| Permanent link to this record | |||||
| Author | Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G. | ||||
| Title | Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure | Type | Journal Article | ||
| Year | 1989 | Publication | Sov. Phys. and Technics of Semiconductors | Abbreviated Journal | Sov. Phys. and Technics of Semiconductors |
| Volume | 23 | Issue | 8 | Pages | 843-846 |
| Keywords |
Ge, crystallography | ||||
| Abstract | Проведены исследования спектров фототермической ионизации мелких акцепторов (В, Аl) в Ge, предельно сжатом вдоль кристаллографической оси [100]. Из данных измерений с учетом теории построен энергетический спектр примесей. Показано, что энергии большого числа уровней четных и нечетных состояний хорошо соответствуют расчету, выполненному для примесей в анизотропном полупроводнике с параметром анизотропии γ=m∗⊥/m∗∥>1. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Энергетический спектр мелких акцепторов в сильно одноосно деформированном Ge | Approved | no | ||
| Call Number | Serial | 1692 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G. | ||||
| Title | Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons | Type | Journal Article | ||
| Year | 1975 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 40 | Issue | 2 | Pages | 311-315 |
| Keywords |
Ge, cyclotron resonance | ||||
| Abstract | Results are presented of an experimental study of the linewidth of cyclotron resonance under strong quantization conditions on the scattering of electrons by acoustic phonons. The measurements were performed in the 2....{).4 mm wavelength range at temperatures between 10 and 1.4 OK. A number of singularities were observed in the temperature and frequency dependences of the cyclotron linewidth. These can be ascribed to the effect of inhomogeneous broadening due to nonparabolicity of the electron spectrum, which is renormalized as a result of interaction with acoustic phonons. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1768 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. | ||||
| Title | Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions | Type | Journal Article | ||
| Year | 1976 | Publication | Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников | Abbreviated Journal | Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
| Volume | 10 | Issue | Pages | 1379-1383 | |
| Keywords |
Ge, cyclotron resonance, charged impurities, | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1772 | |||
| Permanent link to this record | |||||
| Author | Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. | ||||
| Title | Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields | Type | Journal Article | ||
| Year | 1972 | Publication | Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников | Abbreviated Journal | Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
| Volume | 6 | Issue | Pages | 362-363 | |
| Keywords |
Ge, cyclotron resonance, quantizing magnetic fields | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1774 | |||
| Permanent link to this record | |||||
| Author | Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М. | ||||
| Title | Об одном способе определения концентрации глубоких примесей в германии | Type | Journal Article | ||
| Year | 1983 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 17 | Issue | 10 | Pages | 1896-1898 |
| Keywords |
Ge, deep impurities | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1762 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. | ||||
| Title | Investigation of population and ionization of donor excited states in Ge | Type | Conference Article | ||
| Year | 1976 | Publication | Physics of Semiconductors | Abbreviated Journal | Physics of Semiconductors |
| Volume | Issue | Pages | 631-634 | ||
| Keywords |
Ge, donor excited states | ||||
| Abstract | |||||
| Address | Amsterdam | ||||
| Corporate Author | Thesis | ||||
| Publisher | North-Holland Publishing Co. | Place of Publication | Editor | ||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1732 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Gol'tsman, G. N. | ||||
| Title | Transitions of electrons between excited states of donors in germanium | Type | Journal Article | ||
| Year | 1971 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 14 | Issue | 2 | Pages | 63-65 |
| Keywords |
Ge, donors, excited states | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1740 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Goltsman, G. N. | ||||
| Title | Zeeman effect in excited-states of donors in germanium | Type | Journal Article | ||
| Year | 1972 | Publication | Sov. Phys. Semicond. | Abbreviated Journal | Sov. Phys. Semicond. |
| Volume | 6 | Issue | 3 | Pages | 509 |
| Keywords |
Ge, donors, Zeeman effect | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa | Place of Publication | Editor | ||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1737 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. | ||||
| Title | Kinetics of electron and hole binding into excitons in germanium | Type | Journal Article | ||
| Year | 1983 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 57 | Issue | 2 | Pages | 369-376 |
| Keywords |
Ge, electron and hole binding | ||||
| Abstract | The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1711 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. | ||||
| Title | Observation of the free-exciton spectrum at submillimeter wavelengths | Type | Journal Article | ||
| Year | 1972 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 16 | Issue | 4 | Pages | 161-162 |
| Keywords |
Ge, energy spectrum, free excitons | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1736 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E.; Goltsman, G.; Orlov, L.; Ptitsina, N. | ||||
| Title | Population of excited-states of small admixtures in germanium | Type | Conference Article | ||
| Year | 1978 | Publication | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya | Abbreviated Journal | Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
| Volume | 42 | Issue | 6 | Pages | 1154-1159 |
| Keywords |
Ge, excited states, admixtures | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia | Place of Publication | Editor | ||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1723 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. | ||||
| Title | Kinetics of submillimeter impurity and exciton photoconduction in Ge | Type | Journal Article | ||
| Year | 1982 | Publication | Optics and Spectroscopy | Abbreviated Journal | Optics and Spectroscopy |
| Volume | 52 | Issue | 4 | Pages | 454-455 |
| Keywords |
Ge, exciton photoconduction | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1715 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. | ||||
| Title | Cross section for binding of free carriers into excitons in germanium | Type | Journal Article | ||
| Year | 1981 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 33 | Issue | 11 | Pages | 574 |
| Keywords |
Ge, excitons, photoconductivity | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1718 | |||
| Permanent link to this record | |||||
| Author | Гольцман, Г. Н.; Птицина, Н. Г.; Ригер, Е. Р. | ||||
| Title | Оже-рекомбинация свободных носителей на мелких донорах в германии | Type | Journal Article | ||
| Year | 1984 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 18 | Issue | 9 | Pages | 1684-1686 |
| Keywords |
Ge, free carrier recombination | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Russian | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1710 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. | ||||
| Title | Investigation of free excitons in Ge and their condensation at submillimeter wavelengths | Type | Journal Article | ||
| Year | 1976 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 43 | Issue | 1 | Pages | 116-122 |
| Keywords |
Ge, free excitons | ||||
| Abstract | Results are presented of an investigation of free excitons in Ge in the submillimeter wavelength range for low as well as for high excitation levels when interaction between the excitons becomes important. The free-exciton energy spectrum is discussed. It is shown that the drop radii and their concentrations can be determined by measuring the temperature dependence of the free-exciton concentration. A section of the phase diagram is obtained in the 0.5-2.8 K temperature range for the free excitons+condensate system. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1731 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. | ||||
| Title | Energy spectrum of free excitons in germanium | Type | Journal Article | ||
| Year | 1973 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 18 | Issue | 3 | Pages | 93 |
| Keywords |
Ge, free excitons, energy spectrum | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1734 | |||
| Permanent link to this record | |||||
| Author | Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. | ||||
| Title | Capture of free holes by charged acceptors in uniaxially deformed Ge | Type | Journal Article | ||
| Year | 1988 | Publication | Fizika i Tekhnika Poluprovodnikov | Abbreviated Journal | Fizika i Tekhnika Poluprovodnikov |
| Volume | 22 | Issue | 3 | Pages | 540-543 |
| Keywords |
Ge, free holes, capture | ||||
| Abstract | Цель настоящей работы — исследование кинетики примесной фотопроводимости p-Ge при сильном одноосном сжатии в широком диапазоне изменения интенсивности примесного подсвета, создающего свободные дырки, и определение сечения каскадного захвата дырок на мелкие заряженные акцепторы в условиях преобладания электрон-фононного механизма потерь энергии. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Russian | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Захват свободных дырок заряженными акцепторами в одноосно деформированном Ge | Approved | no | ||
| Call Number | Serial | 1698 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. | ||||
| Title | Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field | Type | Journal Article | ||
| Year | 1977 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 45 | Issue | 3 | Pages | 555-565 |
| Keywords |
Ge, GaAs, magnetic field, donors, energy spectrum | ||||
| Abstract | The spectrum of the submillimeter photoconductivity of n-GaAs and n-Ge in a magnetic field up to 60 kOe at helium temperatures was investigated. A large number of lines due to transitions between excited states of the donors have been investigated, and the measurement results were used to determine a number of levels of the energy spectrum in a wide range of magnetic fields. For GaAs, these data are compared with calculations of the energy spectrum of the hydrogen atom in magnetic fields up to -2X lo9 Oe. For the donors in Ge, the energy spectrum is investigated at different orientations of the magnetic field relative to the crystallographic axes (H 11 [loo], [I 1 I], [110]), and these results are also compared with the corresponding calculations. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1728 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. | ||||
| Title | Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium | Type | Journal Article | ||
| Year | 1971 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 14 | Issue | 6 | Pages | 241 |
| Keywords |
Ge, gamma irradiation, defects, impurities | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1742 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. | ||||
| Title | Absorption spectra in electron transitions between excited states of impurities in germanium | Type | Journal Article | ||
| Year | 1975 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 22 | Issue | 4 | Pages | 95-97 |
| Keywords |
Ge, impurities, excited states, absorption spectra | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1773 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G. | ||||
| Title | Capture of photoexcited carriers by shallow impurity centers in germanium | Type | Journal Article | ||
| Year | 1979 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 50 | Issue | 4 | Pages | 728-734 |
| Keywords |
Ge, photoexcited carriers, shallow impurity centers | ||||
| Abstract | Measurements were made of the lifetimes rf of free carriers and the relaxation time 7, of the submillimeter impurity photoconductivity when carriers are captured by attracting shallow donors and acceptom in Ge. It is nod that in samples with capture-center concentration N,Z 10"cm-' the relaxation time 7, greatly exceeds rf in the temperature range 4.2-12 K. The measured values of 7,- are compared with the calculation of cascade recombination by the classical model. To evaluate the data on T,, the distinguishing features of this model are considered for the nonstationary case. The substantial difference betweea the values of rf and T, is attributed to re-emission of the carriers from the excited states of the shallow impurities. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1720 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. | ||||
| Title | Population and lifetime of excited states of shallow impurities in Ge | Type | Journal Article | ||
| Year | 1979 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 49 | Issue | 2 | Pages | 355-362 |
| Keywords |
Ge, photothermal ionization, shallow impurities | ||||
| Abstract | An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1719 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. | ||||
| Title | Carrier lifetime in excited states of shallow impurities in germanium | Type | Journal Article | ||
| Year | 1977 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 25 | Issue | 12 | Pages | 539-543 |
| Keywords |
Ge, shallow impurities, excited states | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1726 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. | ||||
| Title | Binding energy of a carrier with a neutral impurity atom in germanium and in silicon | Type | Journal Article | ||
| Year | 1971 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 14 | Issue | 5 | Pages | 185-186 |
| Keywords |
Ge, Si, neutral impurity atom, binding energy | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1739 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Riger, E. R. | ||||
| Title | Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium | Type | Journal Article | ||
| Year | 1986 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 64 | Issue | 4 | Pages | 889-897 |
| Keywords |
Ge, trapping of free carriers | ||||
| Abstract | Cascade Auger recombination of free carriers on shallow impurities in Ge is investigated under quasi-equilibrium conditions (T= 2-12 K) and in impurity breakdown. The Auger capture cross sections are found to be a,= 5. 10-l9 T-'n cm2 for donors and uip= 7- T-5p cm2 for acceptors. It is shown that in an isotropic semiconductor (p-Ge) ui is well described by the cascade-capture theory that takes into account only electron-electron collisions. In an anisotropic semiconductor ui is considerably larger (n-Ge, strongly uniaxially compressedp-Ge). Under impurity breakdown conditions the electron-electron collisions determine the lifetimes of the free carriers only in samples with appreciable density of the compensating impurity (Nk loi3 cmP3). | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1707 | |||
| Permanent link to this record | |||||
| Author | Gol'tsman, G. N.; Gusinskii, E. N.; Malyavkin, A. V.; Ptitsina, N. G.; Selevko, A. G.; Edel'shtein, V. M. | ||||
| Title | The excitonic Zeeman effect in uniaxially-strained germanium | Type | Journal Article | ||
| Year | 1987 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 65 | Issue | 6 | Pages | 1233-1241 |
| Keywords |
Ge, Zeeman effect | ||||
| Abstract | We have carried out a high-resolution spectroscopic study of the absorption of submillimeter radiation by free excitons in germanium compressed along the [ 1 11 ] axis in a magnetic field parallel to the compression axis. In particular, we studied the splitting of the 1s- 2p transition in fields up to 6 kOe at T = 1.6 K, and observed a complex pattern in the Zeeman splitting which we believe is related to the effect of thermal motion of the excitons in a magnetic field on their internal structure (the magneto-Stark effect). The calculated submillimeter spectrum of excitons agrees with the experimental data. We predict that in a magnetic field the energy of the 2p, term is a minimum at a finite value of the exciton momentum perpendicular to the field-that is, the energy minimum forms a ring in momentum space. It follows that the density of states for this term must be a nonmonotonic function of the energy. A theory is developed of analogous phenomena in positronium. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1705 | |||
| Permanent link to this record | |||||
| Author | Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D. | ||||
| Title | Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors | Type | Journal Article | ||
| Year | 2018 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 112 | Issue | 14 | Pages | 141101 (1 to 5) |
| Keywords |
graphene field effect transistors, FET | ||||
| Abstract | Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs. D.A.B. acknowledges the Leverhulme Trust for financial support. The work of D.S. was supported by Grant No. 16-19-10557 of the Russian Scientific Foundation (theoretical model). G.F., I.G., M.M., and G.G. acknowledge the Russian Science Foundation [Grant No. 14-19-01308 (MIET, cryostat upgrade) and Grant No. 17-72-30036, (MSPU, photoresponse measurements), the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007 (device fabrication) and Task No. 3.7328.2017/LS (NEP analyses)] and the Russian Foundation for Basic Research [Grant No. 15-02-07841 (device design)]. The authors are grateful to Professor M. S. Shur for helpful discussions. |
||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1309 | |||
| Permanent link to this record | |||||
| Author | Fedorov, G. E.; Gaiduchenko, I. A.; Golikov, A. D.; Rybin, M. G.; Obraztsova, E. D.; Voronov, B. M.; Coquillat, D.; Diakonova, N.; Knap, W.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. | ||||
| Title | Response of graphene based gated nanodevices exposed to THz radiation | Type | Conference Article | ||
| Year | 2015 | Publication | EPJ Web of Conferences | Abbreviated Journal | EPJ Web of Conferences |
| Volume | 103 | Issue | Pages | 10003 (1 to 2) | |
| Keywords |
graphene field-effect transistor, FET | ||||
| Abstract | In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 2100-014X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1350 | |||
| Permanent link to this record | |||||
| Author | Gayduchenko, I. A.; Moskotin, M. V.; Matyushkin, Y. E.; Rybin, M. G.; Obraztsova, E. D.; Ryzhii, V. I.; Goltsman, G. N.; Fedorov, G. E. | ||||
| Title | The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts | Type | Conference Article | ||
| Year | 2018 | Publication | Materials Today: Proc. | Abbreviated Journal | Materials Today: Proc. |
| Volume | 5 | Issue | 13 | Pages | 27301-27306 |
| Keywords |
graphene nanoribbons, graphene-nanoribbon, GNR FET, field effect transistor | ||||
| Abstract | We report on the detection of sub-terahertz radiation using single layer graphene and graphene-nanoribbon FETs with asymmetric contacts (one is the Schottky contact and one – the Ohmic contact). We found that cutting graphene into ribbons a hundred nanometers wide leads to a decrease of the response to sub-THz radiation. We show that suppression of the response in the graphene nanoribbons devices can be explained by unusual properties of the Schottky barrier on graphene-vanadium interface. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 2214-7853 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1316 | |||
| Permanent link to this record | |||||
| Author | Matyushkin, Y.; Danilov, S.; Moskotin, M.; Belosevich, V.; Kaurova, N.; Rybin, M.; Obraztsova, E. D.; Fedorov, G.; Gorbenko, I.; Kachorovskii, V.; Ganichev, S. | ||||
| Title | Helicity-sensitive plasmonic terahertz interferometer | Type | Journal Article | ||
| Year | 2020 | Publication | Nano Lett. | Abbreviated Journal | Nano Lett. |
| Volume | 20 | Issue | 10 | Pages | 7296-7303 |
| Keywords |
graphene, plasmonic interferometer, radiation helicity, terahertz radiation | ||||
| Abstract | Plasmonic interferometry is a rapidly growing area of research with a huge potential for applications in the terahertz frequency range. In this Letter, we explore a plasmonic interferometer based on graphene field effect transistor connected to specially designed antennas. As a key result, we observe helicity- and phase-sensitive conversion of circularly polarized radiation into dc photovoltage caused by the plasmon-interference mechanism: two plasma waves, excited at the source and drain part of the transistor, interfere inside the channel. The helicity-sensitive phase shift between these waves is achieved by using an asymmetric antenna configuration. The dc signal changes sign with inversion of the helicity. A suggested plasmonic interferometer is capable of measuring the phase difference between two arbitrary phase-shifted optical signals. The observed effect opens a wide avenue for phase-sensitive probing of plasma wave excitations in two-dimensional materials. | ||||
| Address | CENTERA Laboratories, Institute of High Pressure Physics, PAS, 01-142 Warsaw, Poland | ||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1530-6984 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:32903004 | Approved | no | ||
| Call Number | Serial | 1781 | |||
| Permanent link to this record | |||||
| Author | Fedorov, G.; Gayduchenko, I.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. | ||||
| Title | Graphene-based lateral Schottky diodes for detecting terahertz radiation | Type | Conference Article | ||
| Year | 2018 | Publication | Proc. Optical Sensing and Detection V | Abbreviated Journal | Proc. Optical Sensing and Detection V |
| Volume | 10680 | Issue | Pages | 30-39 | |
| Keywords |
graphene, terahertz radiation, detectors, Schottky diodes, carbon nanotubes, plasma waves | ||||
| Abstract | Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of graphene field effect transistors of two configurations. The devices of the first type are based on single layer CVD graphene with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes (LSD). The devices of the second type are made in so-called Dyakonov-Shur configuration in which the radiation is coupled through a spiral antenna to source and top electrodes. We show that at 300 K the LSD detector exhibit the room-temperature responsivity from R = 15 V/W at f= 129 GHz to R = 3 V/W at f = 450 GHz. The DS detector responsivity is markedly lower (2 V/W) and practically frequency independent in the investigated range. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Spie | Place of Publication | Editor | Berghmans, F.; Mignani, A.G. | |
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | 10.1117/12.2307020 | Serial | 1306 | ||
| Permanent link to this record | |||||
| Author | Prokhodtsov, A.; Golikov, A.; An, P.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. | ||||
| Title | Effect of silicon oxide coating on a silicon nitride focusing grating coupler efficiency | Type | Conference Article | ||
| Year | 2019 | Publication | EPJ Web Conf. | Abbreviated Journal | EPJ Web Conf. |
| Volume | 220 | Issue | Pages | 02009 | |
| Keywords |
grating coupler, SiO2 | ||||
| Abstract | The dependence of the efficiency of the focusing grating couplers on the period and filling factor before and after deposition of the upper silicon oxide layer was experimentally studied. The obtained data are of practical importance for tunable integrated-optical devices based on silicon nitride platform. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 2100-014X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1188 | |||
| Permanent link to this record | |||||
| Author | Elmanov, I.; Sardi, F.; Xia, K.; Kornher, T.; Kovalyuk, V.; Prokhodtsov, A.; An, P.; Kuzin, A.; Elmanova, A.; Goltsman, G.; Kolesov, R. | ||||
| Title | Development of focusing grating couplers for lithium niobate on insulator platform | Type | Conference Article | ||
| Year | 2020 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1695 | Issue | Pages | 012127 | |
| Keywords |
grating couplers, lithium niobat | ||||
| Abstract | In this paper, we fabricate and experimentally study focusing grating couplers for lithium niobate on an insulator photonic platform. The transmittance of a waveguide equipped with in- and out-couplers with respect to the grating period is measured with and without silicon dioxide cladding applied. Our results show the influence of silicon dioxide cladding on the efficiency and the central wavelength of grating couplers and can be used to improve grating coupling efficiency. Our study is supported by numerical simulations. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1180 | |||
| Permanent link to this record | |||||
| Author | Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М.; Гусинский, Э. Н.; Литвак-Горская, Л. Б. | ||||
| Title | Оценка точности метода определения раздельной концентрации примесей из измерений постоянной Холла | Type | Journal Article | ||
| Year | 1990 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 24 | Issue | 12 | Pages | 2145-2150 |
| Keywords |
Hall constant, concentration of impurities, p-Si | ||||
| Abstract | На примере p-Si⟨B,\,Ga⟩ с различной степенью компенсации проведена сравнительная оценка точности определения раздельной концентрации примесей по температурной зависимости концентрации дырок p(T) в случае одной и двух легирующих примесей с энергиями ионизации, различающимися менее чем в 2 раза. Исследована функция среднеквадратичного отклонения в пространстве параметров D(Nк, N2) (Nк, N1 и N2 — концентрации компенсирующих примесей бора и галлия соответственно, N2≫N1) в предположении, что N2, энергии B и Ga известны. Показано, что в случае двух легирующих примесей D(Nк, N1) в окрестностях минимума имеет «овражный» рельеф и при некоторых соотношениях между Nк и N1 разброс искомых величин превышает порядок, причем увеличение точности измерений p(T) существенного улучшения в вычислении параметров не дает. При одной легирующей примеси точность вычисления параметров высокая. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Russian | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1754 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Elantiev, A. I.; Karasik, B. S.; Potoskuev, S. E. | ||||
| Title | Intense electromagnetic radiation heating of electrons of a superconductor in the resistive state | Type | Journal Article | ||
| Year | 1988 | Publication | Sov. J. Low Temp. Phys. | Abbreviated Journal | Sov. J. Low Temp. Phys. |
| Volume | 14 | Issue | 7 | Pages | 414-420 |
| Keywords |
HEB | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Duplicated as 1697 | Approved | no | ||
| Call Number | Serial | 236 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. | ||||
| Title | Limiting characteristic of fast superconducting bolometers | Type | Journal Article | ||
| Year | 1989 | Publication | Sov. Phys.-Tech. Phys. | Abbreviated Journal | Sov. Phys.-Tech. Phys. |
| Volume | 34 | Issue | Pages | 195-199 | |
| Keywords |
HEB | ||||
| Abstract | Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон- ного взаимодействия. Сформулированы требования кконструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | О предельных характеристиках быстродействующих серхпроводниковых болометров | Approved | no | ||
| Call Number | Serial | 237 | |||
| Permanent link to this record | |||||
| Author | Гершензон, Е. М.; Гершензон, М. Е.; Гольцман, Г. Н.; Люлькин, А. М.; Семенов, А. Д.; Сергеев, А. В. | ||||
| Title | О предельных характеристиках быстродействующих серхпроводниковых болометров | Type | Journal Article | ||
| Year | 1989 | Publication | Журнал технической физики | Abbreviated Journal | Журнал технической физики |
| Volume | 59 | Issue | 2 | Pages | 111-120 |
| Keywords |
HEB | ||||
| Abstract | Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон- ного взаимодействия. Сформулированы требования кконструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Russian | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Duplicated as 237 | Approved | no | ||
| Call Number | Serial | 238 | |||
| Permanent link to this record | |||||
| Author | Ожегов, Роман Викторович | ||||
| Title | Флуктуационная чувствительность и стабильность приемников с СИС и HEB смесителями для терагерцового тепловидения | Type | Journal Article | ||
| Year | 2011 | Publication | Радиофизика | Abbreviated Journal | |
| Volume | Issue | Pages | 135 | ||
| Keywords |
HEB | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | RPLAB @ gujma @ | Serial | 731 | ||
| Permanent link to this record | |||||
| Author | Гершензон, Е. М.; Гольцман, Г. Н.; Елантьев, А. И.; Карасик, Б. С.; Потоскуев, С. Э. | ||||
| Title | Разогрев электронов в резистивном состоянии сверхпроводника электромагнитным излучением значительной интенсивности | Type | Journal Article | ||
| Year | 1988 | Publication | Физика низких температур | Abbreviated Journal | Физика низких температур |
| Volume | 14 | Issue | 7 | Pages | 753-763 |
| Keywords |
HEB | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Duplicated as 1697 | Approved | no | ||
| Call Number | Serial | 883 | |||
| Permanent link to this record | |||||
| Author | Ozhegov, R. V.; Smirnov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V.; Divochiy, A. V.; Goltsman, G. N. | ||||
| Title | Ultrafast superconducting bolometer receivers for terahertz applications | Type | Abstract | ||
| Year | 2009 | Publication | Proc. PIERS | Abbreviated Journal | Proc. PIERS |
| Volume | Issue | Pages | 867 | ||
| Keywords |
HEB | ||||
| Abstract | The research by the group of Moscow State Pedagogical University into the hot-electron phenomena in thin superconducting films has led to the development of new types of detectors and their use both in fundamental and applied studies. In this paper, we present the results of testing the terahertz HEB receiver systems based on ultrathin (∼ 4 nm) NbN and MoRe detectors with a response time of 50 ps and 1 ns, respectively. We have developed three types of devices which differ in the way a terahertz signal is coupled to the detector and cover the following ranges: 0.3–3 THz, 0.1–30 THz and 25–70 THz. In the case of the receiving system optimized for 0.3–3 THz, the sensitive element (a strip of asuperconductor with planar dimensions of 0.2μm (length) by 1.7μm (width)) was integrated witha planar broadband log-spiral antenna. For additional focusing ofthe incident radiation a silicon hyperhemispherical lens was used. For the 0.1–30 THz receivingsystem, the sensitive element was patterned as parallel strips(2μm wide each) filling an area of 500×500μm2with a filling factor of 0.5. In the receivingsystem of this type we used direct coupling of the incident radiation to the sensitive element. Inthe 25–70 THz range (detector type 2/2a in Table 1) we used a square-shaped superconductingdetector with planar dimensions of 10×10μm2. Incident radiation was coupled to the detectorwith the use of a germanium hyperhemispherical lens.The response time of the above receiving systems is determined by the cooling rate of the hotelectrons in the film. That depends on the electron-phonon interaction time, which is less forultrathin NbN than in MoRe. | ||||
| Address | Moscow, Russia | ||||
| Corporate Author | Thesis | ||||
| Publisher | The Electromagnetics Academy | Place of Publication | 777 Concord Avenue, Suite 207 Cambridge, MA 02138 | Editor | |
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1559-9450 | ISBN | 978-1-934142-09-7 | Medium | |
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | RPLAB @ sasha @ ozhegovultrafast | Serial | 1022 | ||
| Permanent link to this record | |||||
| Author | Zhang, W.; Miao, W.; Zhong, J. Q.; Shi, S. C.; Hayton, D. J.; Vercruyssen, N.; Gao, J. R.; Goltsman, G. N. | ||||
| Title | Temperature dependence of superconducting hot electron bolometers | Type | Conference Article | ||
| Year | 2013 | Publication | Not published results: 24th international symposium on space terahertz technology | Abbreviated Journal | |
| Volume | Issue | Pages | |||
| Keywords |
HEB | ||||
| Abstract | |||||
| Address | Groningen,The Netherlands | ||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1067 | |||
| Permanent link to this record | |||||
| Author | Shurakov, A.; Lobanov, Y.; Goltsman, G. | ||||
| Title | Superconducting hot-electron bolometer: from the discovery of hot-electron phenomena to practical applications | Type | Journal Article | ||
| Year | 2015 | Publication | Supercond. Sci. Technol. | Abbreviated Journal | Supercond. Sci. Technol. |
| Volume | 29 | Issue | 2 | Pages | 023001 |
| Keywords |
HEB | ||||
| Abstract | The discovery of hot-electron phenomena in a thin superconducting film in the last century was followed by numerous experimental studies of its appearance in different materials aiming for a better understanding of the phenomena and consequent implementation of terahertz detection systems for practical applications. In contrast to the competitors such as superconductor-insulator-superconductor tunnel junctions and Schottky diodes, the hot electron bolometer (HEB) did not demonstrate any frequency limitation of the detection mechanism. The latter, in conjunction with a decent performance, rapidly made the HEB mixer the most attractive candidate for heterodyne observations at frequencies above 1 THz. The successful operation of practical instruments (the Heinrich Hertz Telescope, the Receiver Lab Telescope, APEX, SOFIA, Hershel) ensures the importance of the HEB technology despite the lack of rigorous theoretical routine for predicting the performance. In this review, we provide a summary of experimental and theoretical studies devoted to understanding the HEB physics, and an overview of various fabrication routes and materials. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0953-2048 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1156 | |||
| Permanent link to this record | |||||
| Author | Gol'tsman, G. N.; Elant'iev, A. I.; Karasik, B. S.; Gershenzon, E. M. | ||||
| Title | Antenna – coupled superconducting electron-heating bolometer | Type | Conference Article | ||
| Year | 1993 | Publication | Proc. 4th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 4th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 623-628 | ||
| Keywords |
HEB | ||||
| Abstract | We propose a novel antenna-coupled superconducting bolometer based on electron-heating in the resistive state. A short narrow ultrathin super- conducting film strip (sized approximately 4x1x0.01 pm 3 ), which is in good thermal contact with the thermostat, serves as a resistive load for infrared or submillimeter current. In contrast to conventional isothermal super- conducting bolometers electron-heating ones can have a higher sensitivity which grows when filni. thickness is reduced. Response time of electron- heating bolometer does not depend on heat transfer from the film to the enviroment. To calculate the sensitivity (NEP), we have used experimental data on wideband Al, Nb and NbN bolometers which have the same un- derlying physical mechanism. The bolom.eters have been made in the form of a structure composed of a number of long narrow strips. The values of for Al, NEP have been found to be 1.5 . 113 -16 1 140 -15 ) and 2 . 10 – 14werT,-1/2 – Nb and NbN respectively. In the paper, the prospects are also discussed of improving the picosecond YBaCuO detector, developed recently. NEP value of the detector, if combined with a microantenna, can reach the order of 10- •ilz-v2. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1657 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Lyulkin, A. M.; Semenov, A. D.; Sergeev, A. V. | ||||
| Title | Limiting characteristics of fast-response superconducting bolometers | Type | Journal Article | ||
| Year | 1989 | Publication | Zhurnal Tekhnicheskoi Fiziki | Abbreviated Journal | Zhurnal Tekhnicheskoi Fiziki |
| Volume | 59 | Issue | 2 | Pages | 11-120 |
| Keywords |
HEB | ||||
| Abstract | Теоретически и экспериментально исследовано физическое ограничение быстродействия сверхпроводящего болометра. Показано, что минимальная постоянная времени реализуется в условиях электронного разогрева и определяется процессом неупругого электрон-фонон-ного взаимодействия. Сформулированы требования к конструкции «электронного болометра» для достижения предельной чувствительности. Проведено сравнение характеристик электронного болометра и обычных болометров различных типов. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1696 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. | ||||
| Title | Nonselective effect of electromagnetic radiation on a superconducting film in the resistive state | Type | Journal Article | ||
| Year | 1982 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 36 | Issue | 7 | Pages | 296-299 |
| Keywords |
HEB | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Неселективное воздействие электромагнитного излучения на сверхпроводящую пленку в резистивном состоянии | Approved | no | ||
| Call Number | Serial | 1717 | |||
| Permanent link to this record | |||||
| Author | Kitaeva, G. K.; Kornienko, V. V.; Kuznetsov, K. A.; Pentin, I. V.; Smirnov, K. V.; Vakhtomin, Y. B. | ||||
| Title | Direct detection of the idler THz radiation generated by spontaneous parametric down-conversion | Type | Journal Article | ||
| Year | 2019 | Publication | Opt. Lett. | Abbreviated Journal | Opt. Lett. |
| Volume | 44 | Issue | 5 | Pages | 1198-1201 |
| Keywords |
HEB applications | ||||
| Abstract | We study parametric down-conversion (PDC) of optical laser radiation in the strongly frequency non-degenerate regime which is promising for the generation of quantum-correlated pairs of extremely different spectral ranges, the optical and the terahertz (THz) ones. The possibility to detect tenuous THz-frequency photon fluxes generated under low-gain spontaneous PDC is demonstrated using a hot electron bolometer. Then experimental dependences of the THz radiation power on the detection angle and on the pump intensity are analyzed. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0146-9592 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:30821747 | Approved | no | ||
| Call Number | Serial | 1801 | |||
| Permanent link to this record | |||||
| Author | Angeluts, A. A.; Bezotosnyi, V. V.; Cheshev, E. A.; Goltsman, G. N.; Finkel, M. I.; Seliverstov, S. V.; Evdokimov, M. N.; Gorbunkov, M. V.; Kitaeva, G. Kh.; Koromyslov, A. L.; Kostryukov, P. V.; Krivonos, M. S.; Lobanov, Yu. V.; Shkurinov, A. P.; Sarkisov, S. Yu.; Tunkin, V. G. | ||||
| Title | Compact 1.64 THz source based on a dual-wavelength diode end-pumped Nd:YLF laser with a nearly semiconfocal cavity | Type | Journal Article | ||
| Year | 2014 | Publication | Laser Phys. Lett. | Abbreviated Journal | |
| Volume | 11 | Issue | 1 | Pages | 015004 (1 to 4) |
| Keywords |
HEB applications, HEB detector applications, short THz pulses detection | ||||
| Abstract | We describe a compact dual-wavelength (1.047 and 1.053 μm) diode end-pumped Q-switched Nd:YLE laser source which has a number of applications in demand. In order to achieve its dual-wavelength operation it is suggested for the first time to use essentially nonmonotonous dependences of the threshold pump powers at these wavelengths on the cavity length in the region of the cavity semiconfocal configuration under a radius of the pump beam smaller than the radius of the zero Gaussian mode. Here we demonstrate one of the most interesting applications for this laser: difference frequency generation in a GaSe crystal at a frequency of 1.64 THz. A superconducting hot-electron bolometer is used to detect the THz power generated and to measure its pulse characteristics. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1076 | |||
| Permanent link to this record | |||||
| Author | Shurakov, Alexander; Maslennikov, Sergey; Tong, Cheuk-yu E.; Gol’tsman, Gregory | ||||
| Title | Performance of an HEB direct detector utilizing a microwave reflection readout scheme | Type | Conference Article | ||
| Year | 2015 | Publication | Proc. 26th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 26th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 36 | ||
| Keywords |
HEB detector | ||||
| Abstract | We report the results of our study on the performance of a hot electron bolometric (HEB) direct detector, operated by a microwave pump. The HEB devices used in this work were made from NbN thin film deposited on high resistivity silicon with an in-situ fabrication process. The experimental setup employed is similar to the one described in [1]. The detector chips were glued to a silicon lens clamped to a copper holder mounted on the cold plate of a liquid helium cryostat. Thermal link between the lens and the holder was maintained by a thin indium shim. The HEBs were operated at a bath temperature of about 4.4 K. Conventional phonon pump, commonly realized by raising the bath temperature of the detector, was substituted by a microwave one. In this case, a CW microwave signal is injected to the device through a directional coupler connected directly to the detector holder. The power incident on the HEB device was typically 1-2 μW, and the pump frequency was in the range of 0.5-1.5 GHz. The signal sources were 2 black bodies held at temperatures of 295 K and 77 K. A chopper wheel placed in front of the cryostat window switched the input to the detector between the 2 sources. A modulation frequency of several kilohertz was chosen in order to reduce the effects of the HEB’s flicker noise. A cold mesh filter was used to define the input bandwidth of the detector. The reflected microwave signal from the HEB device was fed into a low noise amplifier, the output of which is connected to a room temperature Schottky microwave power detector. This Schottky detector, in conjunction with a lock-in amplifier, demodulated the input signal modulation from the copper wheel. As the input load was switched, the impedance of the HEB device at the microwave pump frequency also changed in response to the incident signal power variation. Therefore the reflected microwave power follows the incident signal modulation. The derived responsivity from this detection system nicely correlates with the HEB impedance. In order to provide a quantitative description of the impedance variation of the HEB device and the impact of a microwave pump, we have numerically solved the heat balance equations written for the NbN bridge and its surrounding thermal heat sink [2]. Our model also accounts for the impact of the operating frequency of the detector because of non-uniform absorption of low-frequency photons across the NbN bridge [3]. In our measurements we varied the signal source wavelength from 2 mm down to near infrared range, and hence we indirectly performed the impedance measurements at frequencies below, around and far beyond the superconducting gap. Preliminary results show good agreement between the experiment and theoretical prediction. Further measurements are still in progress. [1] A. Shurakov et al., “A Microwave Reflection Readout Scheme for Hot Electron Bolometric Direct Detector”, to appear in IEEE Trans. THz Sci. Tech., 2015. [2] S. Maslennikov, “RF heating efficiency of the terahertz superconducting hot-electron bolometer”, http://arxiv.org/pdf/1404.5276v5.pdf, 2014. [3] W. Miao et al., “Non-uniform absorption of terahertz radiation on superconducting hot electron bolometer microbridges”, Appl. Phys. Let., 104, 052605, 2014. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1158 | |||
| Permanent link to this record | |||||
| Author | Seliverstov, S.; Maslennikov, S.; Ryabchun, S.; Finkel, M.; Klapwijk, T. M.; Kaurova, N.; Vachtomin, Yu.; Smirnov, K.; Voronov, B.; Goltsman, G. | ||||
| Title | Fast and sensitive terahertz direct detector based on superconducting antenna-coupled hot electron bolometer | Type | Journal Article | ||
| Year | 2015 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 25 | Issue | 3 | Pages | 2300304 |
| Keywords |
HEB detector responsivity, HEB model, numerical calculations, numerical model | ||||
| Abstract | We characterize superconducting antenna-coupled hot-electron bolometers for direct detection of terahertz radiation operating at a temperature of 9.0 K. The estimated value of responsivity obtained from lumped-element theory is strongly different from the measured one. A numerical calculation of the detector responsivity is developed, using the Euler method, applied to the system of heat balance equations written in recurrent form. This distributed element model takes into account the effect of nonuniform heating of the detector along its length and provides results that are in better agreement with the experiment. At a signal frequency of 2.5 THz, the measured value of the optical detector noise equivalent power is 2.0 × 10-13 W · Hz-0.5. The value of the bolometer time constant is 35 ps. The corresponding energy resolution is about 3 aJ. This detector has a sensitivity similar to that of the state-of-the-art sub-millimeter detectors operating at accessible cryogenic temperatures, but with a response time several orders of magnitude shorter. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 953 | |||
| Permanent link to this record | |||||
| Author | Gershenson, M. E.; Gong, D.; Sato, T.; Karasik, B. S.; Sergeev, A. V. | ||||
| Title | Millisecond electron-phonon relaxation in ultrathin disordered metal films at millikelvin temperatures | Type | Journal Article | ||
| Year | 2001 | Publication | Appl. Phys. Lett. | Abbreviated Journal | |
| Volume | 79 | Issue | Pages | 2049-2051 | |
| Keywords |
HEB detector, FIR, far infrared | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | RPLAB @ s @ heb_eph_interaction_Gershenzon | Serial | 315 | ||
| Permanent link to this record | |||||
| Author | Shurakov, A.; Tong, Cheuk-yu E.; Grimes, P.; Blundell, R.; Golt'sman, G. | ||||
| Title | A microwave reflection readout scheme for hot electron bolometric direct detector | Type | Journal Article | ||
| Year | 2015 | Publication | IEEE Trans. THz Sci. Technol. | Abbreviated Journal | IEEE Trans. THz Sci. Technol. |
| Volume | 5 | Issue | Pages | 81-84 | |
| Keywords |
HEB detectors | ||||
| Abstract | In this paper, we propose and present data from a fast THz detector based on the repurpose of hot electron bolometer mixers (HEB) fabricated from superconducting NbN thinfilm. This detector is essentially a traditional NbN bolometer element that operates under the influence of a microwave pump. The in-jected microwave power serves the dual purpose of enhancing the detector sensitivity and reading out the impedance changes of the device in response to incidentTHz radiation. We have measured an optical Noise Equivalent Power of 4 pW/ Hz for our detector at a bath temperature of 4.2 K. The measurement frequency was 0.83 THz and the modulation frequency was 1.48 kHz. The readout scheme is versatile and facilitates both high-speed operation as well as multi-pixel applications. |
||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | RPLAB @ atomics90 @ | Serial | 950 | ||
| Permanent link to this record | |||||
| Author | Loudkov, D.; Tong, C. Y. E.; Blundell, R.; Kaurova, N.; Grishina, E.; Voronov, B.; Gol'tsman, G. | ||||
| Title | An investigation of the performance of the superconducting HEB슠mixer as a function of its RF슠embedding impedance | Type | Journal Article | ||
| Year | 2005 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | |
| Volume | 15 | Issue | 2 | Pages | 472-475 |
| Keywords |
HEB mixer | ||||
| Abstract | |||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | IEEE | Place of Publication | Editor | ||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 371 | |||
| Permanent link to this record | |||||
| Author | Ryabchun, Sergey; Tong, Cheuk-Yu Edward; Paine, Scott; Lobanov, Yury; Blundell, Raymond; Goltsman, Gregory | ||||
| Title | Temperature resolution of an HEB receiver at 810 GHz | Type | Journal Article | ||
| Year | 2009 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 19 | Issue | 3 | Pages | 293-296 |
| Keywords |
HEB mixer | ||||
| Abstract | We present the results of direct measurements of the temperature resolution of an HEB receiver operating at 810 GHz, in both continuum and spectroscopic modes. In the continuum mode, the input of the receiver was switched between black bodies with different physical temperatures. With a system noise temperature of around 1100 K, the receiver was able to resolve loads which differed in temperature by about 1 K over an integration time of 5 seconds. This resolution is significantly worse than the value of 0.07 K given by the radiometer equation. In the spectroscopic mode, a gas cell filled with carbonyl sulphide (OCS) gas was used and the emission line at 813.3537060 GHz was measured using the receiver in conjunction with a digital spectrometer. From the observed spectra, we determined that the measurement uncertainty of the equivalent emission temperature was 2.8 K for an integration time of 0.25 seconds and a spectral resolution of 12 MHz, compared to a 1.4 K temperature resolution given by the radiometer equation. This relative improvement is due to the fact that at short integration times the contribution from 1/f noise and drift are less dominant. In both modes, the temperature resolution was improved by about 40% with the use of a feedback loop which adjusted the level of an injected microwave radiation to maintain a constant operating current of the HEB mixer. This stabilization scheme has proved to be very effective to keep the temperature resolution of the HEB receiver to close to the theoretical value given by the radiometer equation. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 636 | |||
| Permanent link to this record | |||||
| Author | Масленникова, А. В.; Рябчун, С. А.; Финкель, М. И.; Каурова, Н. С.; Исупова, А. А.; Воронов, Б. М.; Гольцман, Г. Н. | ||||
| Title | Широкополосные смесители на горячих электронах на основе NbN наноструктур | Type | Journal Article | ||
| Year | 2011 | Publication | Труды Московского физико-технического института | Abbreviated Journal | Труды МФТИ |
| Volume | 3 | Issue | 2 | Pages | 31-34 |
| Keywords |
HEB mixer | ||||
| Abstract | Мы приводим данные исследования полосы преобразования смесителей на горячих электронах (hot-electron bolometer, НЕВ), изготовленных на основе тонких пленок NbN. Зависимость полосы преобразования от длины смесительного элемента находится в прекрасном согласии с результатами теоретической модели HEB-смесителя, в котором энергетическая релаксация электронов одновременно происходит по двум каналам: фононному и диффузионному. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | RPLAB @ gujma @ | Serial | 646 | ||
| Permanent link to this record | |||||
| Author | Lobanov, Y. V.; Tong, Cheuk-Yu E.; Hedden, A. S.; Blundell, R.; Gol'tsman, G. N. | ||||
| Title | Microwave-assisted슠measurement슠of the슠frequency슠response슠of슠terahertz슠HEB슠mixers슠with a슠fourier슠transform슠spectrometer | Type | Conference Article | ||
| Year | 2010 | Publication | 21st International Symposium on Space Terahertz Technology | Abbreviated Journal | 21st ISSTT |
| Volume | Issue | Pages | 420-423 | ||
| Keywords |
HEB mixer | ||||
| Abstract | We describe a novel method of operation of the HEB direct detector for use with a Fourier Transform Spectrometer. Instead of elevating the bath temperature, we have measured the RF response of waveguide HEB mixers by applying microwave radiation to select appropriate bias conditions. In our experiment, a microwave signal is injected into the HEB mixer via its IF port. By choosing an appropriate injection level, the device can be operated close to the desired operating point. Furthermore, we have shown that both thermal biasing and microwave injection can reproduce the same spectral response of the HEB mixer. However, with the use of microwave injection, there is no need to wait for the mixer to reach thermal equilibrium, so characterisation can be done in less time. Also, the liquid helium consumption for our wet cryostat is also reduced. We have demonstrated that the signalto-noise ratio of the FTS measurements can be improved with microwave injection. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | RPLAB @ gujma @ | Serial | 725 | ||
| Permanent link to this record | |||||
| Author | Hajenius, M.; Barends, R.; Gao, J. R.; Klapwijk, T. M.; Baselmans, J. J. A.; Baryshev, A.; Voronov, B.; Gol'tsman, G. | ||||
| Title | Local resistivity and the current-voltage characteristics of hot electron bolometer mixers | Type | Journal Article | ||
| Year | 2005 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 15 | Issue | 2 | Pages | 495-498 |
| Keywords |
HEB mixer distributed model, HEB distributed model, distributed HEB model | ||||
| Abstract | Hot-electron bolometer devices, used successfully in low noise heterodyne mixing at frequencies up to 2.5 THz, have been analyzed. A distributed temperature numerical model of the NbN bridge, based on a local electron and a phonon temperature, is used to model pumped IV curves and understand the physical conditions during the mixing process. We argue that the mixing is predominantly due to the strongly temperature dependent local resistivity of the NbN. Experimentally we identify the origins of different transition temperatures in a real HEB device, suggesting the importance of the intrinsic resistive transition of the superconducting bridge in the modeling. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1051-8223 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 980 | |||
| Permanent link to this record | |||||