| |
Author |
Title |
Year |
Publication |
Volume |
Pages |
Links |
|
|
Titova, N.; Gayduchenko, I. A.; Moskotin, M. V.; Fedorov, G. F.; Goltsman, G. N. |
Carbon nanotube based terahertz radiation detectors |
2019 |
J. Phys.: Conf. Ser. |
1410 |
012208 (1 to 5) |
|
|
|
Gayduchenko, I. A.; Fedorov, G. E.; Stepanova, T. S.; Titova, N.; Voronov, B. M.; But, D.; Coquillat, D.; Diakonova, N.; Knap, W.; Goltsman, G. N. |
Asymmetric devices based on carbon nanotubes as detectors of sub-THz radiation |
2016 |
J. Phys.: Conf. Ser. |
741 |
012143 (1 to 6) |
|
|
|
Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Voronov, B. M.; Finkel, M.; Klapwijk, T. M.; Goltsman, G. |
Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-THz radiation |
2014 |
Proc. 25th Int. Symp. Space Terahertz Technol. |
|
71 |
|
|
|
Fedorov, G. E.; Stepanova, T. S.; Gazaliev, A. S.; Gaiduchenko, I. A.; Kaurova, N. S.; Voronov, B. M.; Goltzman, G. N. |
Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection |
2016 |
Semicond. |
50 |
1600-1603 |
|
|
|
Akhmadishina, K. F.; Bobrinetskiy, I. I.; Komarov, I. A.; Malovichko, A. M.; Nevolin, V. K.; Fedorov, G. E.; Golovin, A. V.; Zalevskiy, A. O.; Aidarkhanov, R. D. |
Fast-response biological sensors based on single-layer carbon nanotubes modified with specific aptamers |
2015 |
Semicond. |
49 |
1749-1753 |
|
|
|
Dube, I.; Jiménez, D.; Fedorov, G.; Boyd, A.; Gayduchenko, I.; Paranjape, M.; Barbara, P. |
Understanding the electrical response and sensing mechanism of carbon-nanotube-based gas sensors |
2015 |
Carbon |
87 |
330-337 |
|
|
|
Ryzhii, V.; Otsuji, T.; Ryzhii, M.; Leiman, V. G.; Fedorov, G.; Goltzman, G. N.; Gayduchenko, I. A.; Titova, N.; Coquillat, D.; But, D.; Knap, W.; Mitin, V.; Shur, M. S. |
Two-dimensional plasmons in lateral carbon nanotube network structures and their effect on the terahertz radiation detection |
2016 |
J. Appl. Phys. |
120 |
044501 (1 to 13) |
|
|
|
Eletskii, A. V.; Sarychev, A. K.; Boginskaya, I. A.; Bocharov, G. S.; Gaiduchenko, I. A.; Egin, M. S.; Ivanov, A. V.; Kurochkin, I. N.; Ryzhikov, I. A.; Fedorov, G. E. |
Amplification of a Raman scattering signal by carbon nanotubes |
2018 |
Dokl. Phys. |
63 |
496-498 |
|
|
|
Matyushkin, Y.; Kaurova, N.; Voronov, B.; Goltsman, G.; Fedorov, G. |
On chip carbon nanotube tunneling spectroscopy |
2020 |
Fullerenes, Nanotubes and Carbon Nanostructures |
28 |
50-53 |
|
|
|
Fedorov, G.; Kardakova, A.; Gayduchenko, I.; Charayev, I.; Voronov, B.M.; Finkel, M.; Klapwijk, T.M.; Morozov, S.; Presniakov, M.; Bobrinetskiy, I.; Ibragimov, R.; Goltsman, G. |
Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-terahertz radiation |
2013 |
Appl. Phys. Lett. |
103 |
181121 (1 to 5) |
|
|
|
Yang, Y.; Fedorov, G.; Shafranjuk, S. E.; Klapwijk, T. M.; Cooper, B. K.; Lewis, R. M.; Lobb, C. J.; Barbara, P. |
Electronic transport and possible superconductivity at Van Hove singularities in carbon nanotubes |
2015 |
Nano Lett. |
15 |
7859-7866 |
|
|
|
Pyatkov, F.; Khasminskaya, S.; Kovalyuk, V.; Hennrich, F.; Kappes, M. M.; Goltsman, G. N.; Pernice, W. H. P.; Krupke, R. |
Sub-nanosecond light-pulse generation with waveguide-coupled carbon nanotube transducers |
2017 |
Beilstein J. Nanotechnol. |
8 |
38-44 |
|
|
|
Lang, P. T.; Leipold, I.; Knott, W. J.; Semenov, A. D.; Gol'tsman, G. N.; Renk, K. F. |
New far-infrared laser lines from CH3Cl and CH3Br optically pumped with a continuously tunable high pressure CO2 laser |
1991 |
Appl. Phys. B |
53 |
207-212 |
|
|
|
Lang, P. T.; Knott, W. J.; Leipold, I.; Renk, K. F.; Semenov, A. D.; Gol'tsman, G. N. |
Generation and detection of tunable ultrashort infrared and far-infrared radiation pulses of high intensity |
1992 |
Int. J. of Infrared and Millimeter Waves |
13 |
373-380 |
|
|
|
Zubkova, E.; Golikov, A.; An, P.; Kovalyuk, V.; Korneev, A.; Ferrari, S.; Pernice, W.; Goltsman, G. |
CWDM demultiplexer using anti-reflection, contra-directional couplers based on silicon nitride rib waveguide |
2019 |
J. Phys.: Conf. Ser. |
1410 |
012179 |
|
|
|
Гершензон, Е. М.; Литвак-Горская, Л. Б.; Рабинович, Р. И. |
Отрицательное магнитосопротивление в случае проводимости по верхней зоне Хаббарда |
1983 |
Физика и техника полупроводников |
17 |
1873-1876 |
|
|
|
Гальперин, Ю. М.; Гершензон, Е. М.; Дричко, И. Л.; Литвак-Горская, Л. Б. |
Кинетические явления в компенсированном n-InSb при низких температурах |
1990 |
Физика и техника полупроводников |
24 |
3-24 |
|
|
|
Tikhonov, V. V.; Boyarskii, D. A.; Polyakova, O. N.; Dzardanov, A. L.; Goltsman, G. N. |
Radiophysical and dielectric properties of ore minerals in 12--145 GHz frequency range |
2010 |
PIER B |
25 |
349-367 |
|
|
|
Gayduchenko, I.; Fedorov, G.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. |
Towards to the development of THz detectors based on carbon nanostructures |
2018 |
J. Phys.: Conf. Ser. |
1092 |
012039 (1 to 4) |
|
|
|
Gershenzon, Ye. M.; Goltsman, G. N.; Yelantyev, A. I.; Petrova, Ye. B.; Ptitsina, N. G.; Filatov, V. S. |
Lecture demonstrations of properties of superconductors and liquid helium |
1987 |
USSR Rept Phys. Math. JPRS UPM |
24 |
51 |
|
|
|
Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector |
2020 |
Nanomaterials (Basel) |
10 |
1-12 |
|
|
|
Maslennikov, S. N.; Finkel, M. I.; Antipov, S. V.; Polyakov, S. L.; Zhang, W.; Ozhegov, R.; Vachtomin, Yu. B.; Svechnikov, S. I.; Smirnov, K. V.; Korotetskaya, Yu. P.; Kaurova, N. S.; Gol'tsman, G. N.; Voronov, B. M. |
Spiral antenna coupled and directly coupled NbN HEB mixers in the frequency range from 1 to 70 THz |
2006 |
Proc. 17th Int. Symp. Space Terahertz Technol. |
|
177-179 |
|
|
|
Семенов, А. В.; Корнеев, А. А.; Смирнов, А. В.; Смирнов, К. В.; Ожегов, Р. В.; Окунев, О. В.; Гольцман, Г. Н.; Девятов, И. А. |
Линейные по мощности поглощаемого излучения поправки к спектральным функциям «грязного» сверхпроводника и отклик сверхпроводниковых детекторов |
2012 |
Преподаватель ХХI век |
|
216-220 |
|
|
|
Semenov, A. V.; Devyatov, I. A.; Korneev, A. A.; Smirnov, K. V.; Goltsman, G. N.; Melnikov, A. P. |
Derivation of expression for thermodynamic potential of “dirty” superconductor |
2012 |
Rus. J. Radio Electron. |
|
|
|
|
|
Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M. |
Electron–phonon interaction in disordered conductors |
1999 |
Phys. Rev. B Condens. Matter |
263-264 |
190-192 |
|
|
|
Sergeev, A.; Mitin, V. |
Electron-phonon interaction in disordered conductors: Static and vibrating scattering potentials |
2000 |
Phys. Rev. B. |
61 |
6041-6047 |
|
|
|
Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E. |
Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate |
1997 |
Phys. Rev. B |
56 |
10089-10096 |
|
|
|
Kardakova, A.; Finkel, M.; Morozov, D.; Kovalyuk, V.; An, P.; Dunscombe, C.; Tarkhov, M.; Mauskopf, P.; Klapwijk, T.M.; Goltsman, G. |
The electron-phonon relaxation time in thin superconducting titanium nitride films |
2013 |
Appl. Phys. Lett. |
103 |
252602 (1 to 4) |
|
|
|
Elmanov, I.; Elmanova, A.; Komrakova, S.; Golikov, A.; Kaurova, N.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. |
Method for determination of resists parameters for photonic – integrated circuits e-beam lithography on silicon nitride platform |
2019 |
EPJ Web Conf. |
220 |
03012 |
|
|
|
Gershenzon, E.M.; Gol'tsman, G.N.; Dzardanov, A.L.; Kuznetsov, E.A. |
Superconducting UHF-limiter based on electron heating up |
1992 |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
5 |
2164-2170 |
|
|
|
Gershenzon, E.; Goltsman, G.; Elantev, A.; Kagane, M. |
Energy-spectrum of small donors and acceptors in germanium and effect of magnetic-field on it |
1978 |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
42 |
1142-1148 |
|
|
|
Saveskul, N. A.; Titova, N. A.; Baeva, E. M.; Semenov, A. V.; Lubenchenko, A. V.; Saha, S.; Reddy, H.; Bogdanov, S. I.; Marinero, E. E.; Shalaev, V. M.; Boltasseva, A.; Khrapai, V. S.; Kardakova, A. I.; Goltsman, G. N. |
Superconductivity behavior in epitaxial TiN films points to surface magnetic disorder |
2019 |
Phys. Rev. Applied |
12 |
054001 |
|
|
|
Moskotin, M. V.; Gayduchenko, I. A.; Goltsman, G. N.; Titova, N.; Voronov, B. M.; Fedorov, G. F.; Pyatkov, F.; Hennrich, F. |
Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes |
2018 |
J. Phys.: Conf. Ser. |
1124 |
051050 (1 to 5) |
|
|
|
Belosevich, V. V.; Gayduchenko, I. A.; Titova, N. A.; Zhukova, E. S.; Goltsman, G. N.; Fedorov, G. E.; Silaev, A. A. |
Response of carbon nanotube film transistor to the THz radiation |
2018 |
EPJ Web Conf. |
195 |
05012 (1 to 2) |
|
|
|
Matyushkin, Y. E.; Gayduchenko, I. A.; Moskotin, M. V.; Goltsman, G. N.; Fedorov, G. E.; Rybin, M. G.; Obraztsova, E. D. |
Graphene-layer and graphene-nanoribbon FETs as THz detectors |
2018 |
J. Phys.: Conf. Ser. |
1124 |
051054 |
|
|
|
Gayduchenko, I.; Xu, S. G.; Alymov, G.; Moskotin, M.; Tretyakov, I.; Taniguchi, T.; Watanabe, K.; Goltsman, G.; Geim, A. K.; Fedorov, G.; Svintsov, D.; Bandurin, D. A. |
Tunnel field-effect transistors for sensitive terahertz detection |
2021 |
Nat. Commun. |
12 |
543 |
|
|
|
Kuzin, A.; Kovalyuk, V.; Golikov, A.; Prokhodtsov, A.; Marakhin, A.; Ferrari, S.; Pernice, W.; Gippius, N.; Goltsman, G. |
Efficiency of focusing grating couplers versus taper length and angle |
2019 |
J. Phys.: Conf. Ser. |
1410 |
012181 |
|
|
|
Loudkov, D.; Tong, C.-Y. E.; Marrone, D. P.; Ryabchun, S.; Paine, S. N.; Blundell, R. |
Transmission measurements of infrared filters for low-noise terahertz receiver applications |
2005 |
Proc. 16th Int. Symp. Space Terahertz Technol. |
|
354-357 |
|
|
|
Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. |
Investigation of excited donor states in GaAs |
1974 |
Sov. Phys. Semicond. |
7 |
1248-1250 |
|
|
|
Rasulova, G. K.; Pentin, I. V.; Goltsman, G. N. |
Terahertz emission from a weakly-coupled GaAs/AlGaAs superlattice biased into three different modes of current self-oscillations |
2019 |
AIP Advances |
9 |
105220 |
|
|
|
Rasulova, G. K.; Brunkov, P. N.; Pentin, I. V.; Kovalyuk, V. V.; Gorshkov, K. N.; Kazakov, A. Y.; Ivanov, S. Y.; Egorov, A. Y.; Sakseev, D. A.; Konnikov, S. G. |
Mutual synchronization of two coupled self-oscillators based on GaAs/AlGaAs superlattices |
2011 |
Tech. Phys. |
56 |
826-830 |
|
|
|
Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. |
Germanium hot-electron narrow-band detector |
1971 |
Sov. Radio Engineering And Electronic Physics |
16 |
1346 |
|
|
|
Goltsman, G. N.; Maliavkin, A. V.; Ptitsina, N. G.; Selevko, A. G. |
Magnetic exciton spectroscopy in uniaxially compressed Ge at submillimeter waves |
1986 |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
50 |
280-281 |
|
|
|
Воеводин, Е. И.; Гершензон, Е. М.; Гольцман, Г. Н.; Птицина, Н. Г. |
Энергетический спектр мелких акцепторов в сильно одноосно деформированном Ge |
1989 |
Физика и техника полупроводников |
23 |
1356-1361 |
|
|
|
Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G. |
Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure |
1989 |
Sov. Phys. and Technics of Semiconductors |
23 |
843-846 |
|
|
|
Gershenzon, E. M.; Gurvich, Yu. A.; Orlova, S. L.; Ptitsina, N. G. |
Cyclotron resonance of electrons in Ge in a quantizing magnetic field in the case of inelastic scattering by acoustic phonons |
1975 |
Sov. Phys. JETP |
40 |
311-315 |
|
|
|
Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions |
1976 |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
10 |
1379-1383 |
|
|
|
Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. |
Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields |
1972 |
Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
6 |
362-363 |
|
|
|
Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М. |
Об одном способе определения концентрации глубоких примесей в германии |
1983 |
Физика и техника полупроводников |
17 |
1896-1898 |
|
|
|
Gershenzon, E. M.; Goltsman, G. N.; Orlov, L. |
Investigation of population and ionization of donor excited states in Ge |
1976 |
Physics of Semiconductors |
|
631-634 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G. N. |
Transitions of electrons between excited states of donors in germanium |
1971 |
JETP Lett. |
14 |
63-65 |
|
|
|
Gershenzon, E. M.; Goltsman, G. N. |
Zeeman effect in excited-states of donors in germanium |
1972 |
Sov. Phys. Semicond. |
6 |
509 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
Kinetics of electron and hole binding into excitons in germanium |
1983 |
Sov. Phys. JETP |
57 |
369-376 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
Observation of the free-exciton spectrum at submillimeter wavelengths |
1972 |
JETP Lett. |
16 |
161-162 |
|
|
|
Gershenzon, E.; Goltsman, G.; Orlov, L.; Ptitsina, N. |
Population of excited-states of small admixtures in germanium |
1978 |
Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
42 |
1154-1159 |
|
|
|
Gershenzon, E. M.; Goltsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
Kinetics of submillimeter impurity and exciton photoconduction in Ge |
1982 |
Optics and Spectroscopy |
52 |
454-455 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
Cross section for binding of free carriers into excitons in germanium |
1981 |
JETP Lett. |
33 |
574 |
|
|
|
Гольцман, Г. Н.; Птицина, Н. Г.; Ригер, Е. Р. |
Оже-рекомбинация свободных носителей на мелких донорах в германии |
1984 |
Физика и техника полупроводников |
18 |
1684-1686 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
Investigation of free excitons in Ge and their condensation at submillimeter wavelengths |
1976 |
Sov. Phys. JETP |
43 |
116-122 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. |
Energy spectrum of free excitons in germanium |
1973 |
JETP Lett. |
18 |
93 |
|
|
|
Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. |
Capture of free holes by charged acceptors in uniaxially deformed Ge |
1988 |
Fizika i Tekhnika Poluprovodnikov |
22 |
540-543 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. |
Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field |
1977 |
Sov. Phys. JETP |
45 |
555-565 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. |
Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium |
1971 |
JETP Lett. |
14 |
241 |
|
|
|
Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. |
Absorption spectra in electron transitions between excited states of impurities in germanium |
1975 |
JETP Lett. |
22 |
95-97 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G. |
Capture of photoexcited carriers by shallow impurity centers in germanium |
1979 |
Sov. Phys. JETP |
50 |
728-734 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. |
Population and lifetime of excited states of shallow impurities in Ge |
1979 |
Sov. Phys. JETP |
49 |
355-362 |
|
|
|
Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. |
Carrier lifetime in excited states of shallow impurities in germanium |
1977 |
JETP Lett. |
25 |
539-543 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. |
Binding energy of a carrier with a neutral impurity atom in germanium and in silicon |
1971 |
JETP Lett. |
14 |
185-186 |
|
|
|
Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Riger, E. R. |
Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium |
1986 |
Sov. Phys. JETP |
64 |
889-897 |
|
|
|
Gol'tsman, G. N.; Gusinskii, E. N.; Malyavkin, A. V.; Ptitsina, N. G.; Selevko, A. G.; Edel'shtein, V. M. |
The excitonic Zeeman effect in uniaxially-strained germanium |
1987 |
Sov. Phys. JETP |
65 |
1233-1241 |
|
|
|
Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D. |
Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors |
2018 |
Appl. Phys. Lett. |
112 |
141101 (1 to 5) |
|
|
|
Fedorov, G. E.; Gaiduchenko, I. A.; Golikov, A. D.; Rybin, M. G.; Obraztsova, E. D.; Voronov, B. M.; Coquillat, D.; Diakonova, N.; Knap, W.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. |
Response of graphene based gated nanodevices exposed to THz radiation |
2015 |
EPJ Web of Conferences |
103 |
10003 (1 to 2) |
|
|
|
Gayduchenko, I. A.; Moskotin, M. V.; Matyushkin, Y. E.; Rybin, M. G.; Obraztsova, E. D.; Ryzhii, V. I.; Goltsman, G. N.; Fedorov, G. E. |
The detection of sub-terahertz radiation using graphene-layer and graphene-nanoribbon FETs with asymmetric contacts |
2018 |
Materials Today: Proc. |
5 |
27301-27306 |
|
|
|
Matyushkin, Y.; Danilov, S.; Moskotin, M.; Belosevich, V.; Kaurova, N.; Rybin, M.; Obraztsova, E. D.; Fedorov, G.; Gorbenko, I.; Kachorovskii, V.; Ganichev, S. |
Helicity-sensitive plasmonic terahertz interferometer |
2020 |
Nano Lett. |
20 |
7296-7303 |
|
|
|
Fedorov, G.; Gayduchenko, I.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. |
Graphene-based lateral Schottky diodes for detecting terahertz radiation |
2018 |
Proc. Optical Sensing and Detection V |
10680 |
30-39 |
|
|
|
Prokhodtsov, A.; Golikov, A.; An, P.; Kovalyuk, V.; Goltsman, G.; Arakelyan, S.; Evlyukhin, A.; Kalachev, A.; Naumov, A. |
Effect of silicon oxide coating on a silicon nitride focusing grating coupler efficiency |
2019 |
EPJ Web Conf. |
220 |
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